2SC3300 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3300 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3300
DESCRIPTION
·With TO-3PN package
·Low saturation voltage
·Wide area of safe operation
APPLICATIONS
·Power and general purpose application
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
100
UNIT
V
Open base
100
V
Open collector
6
V
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
15
A
ICM
25
A
PC
TC=25ꢀ
100
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3300
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
100
100
6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=1mA ;IE=0
IE=1mA ;IC=0
IC=10A ;IB=1A
IC=10A ;IB=1A
VCB=100V; IE=0
VEB=6V; IC=0
IC=5A ; VCE=4V
V
V
0.5
1.5
0.1
0.1
120
V
VCE
VBE
(sat)
V
(sat)
ICBO
IEBO
hFE
mA
mA
Emitter cut-off current
DC current gain
30
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3300
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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