2SC3300 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC3300 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3300
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 5A
APPLICATIONS
·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
100
50
UNIT
V
V
15
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
15
A
ICP
25
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
60
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3300
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 25mA; IB= 0
50
IC= 5A; IB= 80mA
IC= 5A; IB= 80mA
VCB= 100V ; IE= 0
VEB= 15V ; IC= 0
IC= 5A ; VCE= 1V
IE= -1A ; VC= 2V
0.5
1.2
10
V
)
sat
V
VBE(
)
sat
ICBO
μA
μA
IEBO
hFE
fT
Emitter Cutoff Current
10
DC current gain
60
360
Current-Gain—Bandwidth Product
18
MHz
2
isc Website：www.iscsemi.cn
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