2SC2523 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC2523
型号: 2SC2523
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总3页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2523  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2SA1073  
·Wide area of safe operation  
APPLICATIONS  
·High frequency power amplifier  
·Audio power amplifiers  
·Switching regulators  
·DC-DC converters  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
Fig.1 simplified outline (TO-3) and symbol  
2
Emitter  
Collector  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
160  
UNIT  
V
Open base  
160  
V
Open collector  
7
V
12  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
120  
W
Tj  
150  
Tstg  
-65~150  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2523  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
VBE  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
CONDITIONS  
IC=1mA ;RBE=∞  
MIN  
160  
160  
7
TYP.  
MAX  
UNIT  
V
IC=50μA ;IE=0  
IE=50μA ;IC=0  
IC=5A ;IB=0.5A  
IC=5A ; VCE=5V  
VCB=160V; IE=0  
V
V
1.8  
1.7  
50  
V
V
ICBO  
μA  
mA  
μA  
ICEO  
VCE=160V; RBE=∞  
1
IEBO  
VEB=7V; IC=0  
50  
hFE-1  
DC current gain  
IC=1A ; VCE=5V  
60  
40  
200  
hFE-2  
DC current gain  
IC=7A ; VCE=5V  
COB  
Output capacitance  
IE=0 ; VCB=10V;f=1MHz  
IC=1A ; VCE=10V;f=10MHz  
300  
50  
pF  
fT  
Transition frequency  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2523  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)  
3

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