2SC2527 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC2527
型号: 2SC2527
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2527  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type 2SA1077  
·Fast switching speed  
·Excellent safe operating area  
APPLICATIONS  
·High frequency power amplifiers  
·Audio power amplifiers  
·Switching regulators  
·DC-DC converters  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
120  
UNIT  
V
Open emitter  
Open base  
120  
V
Open collector  
7
V
10  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
60  
W
Tj  
150  
Tstg  
-65~150  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2527  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
VBE  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
CONDITIONS  
MIN  
120  
120  
7
TYP.  
MAX  
UNIT  
V
IC=1mA ; RBE=∞  
IC=50μA ; IE=0  
IE=50μA ; IC=0  
IC=5A; IB=0.5A  
V
V
1.8  
1.7  
50  
V
IC=5 A ; VCE=5V  
VCB=120V ;IE=0  
VCE=120V; IB=0  
VEB=7V ;IC=0  
V
ICBO  
μA  
mA  
μA  
ICEO  
1
IEBO  
50  
hFE-1  
DC current gain  
IC=1 A ; VCE=5V  
IC=5 A ; VCE=5V  
IC=1 A ; VCE=10V  
IE=0 ; VCB=10V; f=1MHz  
60  
40  
200  
hFE -2  
DC current gain  
fT  
Transition frequency  
80  
MHz  
pF  
COB  
Output capacitance  
180  
Switching times  
tr  
ts  
tf  
Rise time  
0.3  
1.3  
0.2  
μs  
μs  
μs  
IC=7.5 A; RL=4Ω  
IB1=-IB2=0.75A  
Storage time  
Fall time  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2527  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3

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