2SC2534 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC2534
型号: 2SC2534
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总4页 (文件大小:170K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2534  
DESCRIPTION  
·
·With TO-220C package  
·High collector breakdown voltage  
: VCEO=400V(Min)  
·Excellent switching time  
: tr=1.0μs(Max.)  
: tf=1.0μs(Max.  
APPLICATIONS  
·High speed high voltage switching applications  
·Switching regulator applications  
·High speed DC-DC converter applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
500  
400  
6
UNIT  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
Open collector  
2
IB  
Base current  
0.5  
Ta=25  
TC=25℃  
1.5  
PC  
Collector dissipation  
W
20  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2534  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
VBEsat  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
MIN  
400  
500  
6
TYP.  
MAX  
UNIT  
V
IC=10mA ; IB=0  
IC=1mA ; IE=0  
V
IE=1mA ; IC=0  
V
IC=0.5A; IB=50mA  
IC=0.5A; IB=50mA  
VCB=400V ;IE=0  
VEB=6V; IC=0  
1.0  
1.5  
100  
1
V
V
ICBO  
μA  
mA  
IEBO  
Emitter cut-off current  
hFE-1  
DC current gain  
IC=0.1A ; VCE=5V  
IC=0.5A ; VCE=5V  
20  
20  
hFE-2  
DC current gain  
Switching times  
tr  
tstg  
tf  
Rise time  
1.0  
2.5  
1.0  
μs  
μs  
μs  
V
CC=200V;  
IB1=-IB2=50mA;RL=400Ω  
Duty cycle1%  
Storage time  
Fall time  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2534  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC2534  
4

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