2SC2525 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2525 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2525
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1075
·Excellent safe operating area
·Ultra fast switching speed
APPLICATIONS
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (MT-200) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
120
UNIT
V
Open base
120
V
Open collector
7
V
12
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
120
W
ꢀ
Tj
150
Tstg
-65~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2525
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
120
120
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=1mA; RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
IC=50µA; IE=0
V
IE=50µA; IC=0
V
IC=5 A;IB=0.5 A
IC=5A ; VCE=5V
VCB=120V; IE=0
VEB=7V; IC=0
0.7
1.8
1.7
50
V
1.25
V
ICBO
Collector cut-off current
Emitter cut-off current
µA
µA
IEBO
50
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=7A ; VCE=5V
IC=1A ; VCB=10V,f=1MHz
IE=0; VCB=10V;f=1MHz
60
40
50
200
hFE-2
DC current gain
fT
Transition frequency
80
MHz
pF
COB
Output capacitance
180
300
Switching times
tr
ts
tf
Rise time
0.3
1.3
0.2
µs
µs
µs
IC=7.5A; RL=4Ω
IB1=-IB2=0.75A
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2525
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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