2SB994Y [ISC]
Transistor;
| 型号： | 2SB994Y |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总2页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB994
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -3A
·Complement to Type 2SD1354
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
-60
UNIT
V
V
V
A
A
-60
-7
Collector Current-Continuous
Base Current-Continuous
-3
IB
-0.5
1.5
Collector Power Dissipation
@Ta=25℃
PC
W
Collector Power Dissipation
@TC=25℃
30
Junction Temperature
Storage Temperature
150
-55~150
℃
℃
TJ
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB994
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= -50mA; IB= 0
-60
V
IC= -3A; IB= -0.3A
-1.0
-1.0
-100
-100
200
V
VCE
(sat)
IC= -0.5A; VCE= -5V
VCB= -60V; IE= 0
V
VBE
(on)
ICBO
μA
μA
IEBO
hFE-1
hFE-2
COB
fT
VEB= -7V; IC= 0
DC Current Gain
IC= -0.5A; VCE= -5V
IC= -3A; VCE= -5V
IE= 0; VCB= -10V; ftest= 1MHz
IC= -0.5A; VCE= -5V
60
20
DC Current Gain
Output Capacitance
150
9
pF
Current-Gain—Bandwidth Prouct
MHz
Switching Times
Turn-on Time
0.4
1.7
0.5
μs
μs
μs
ton
tstg
tf
VCC= -30V, RL= 15Ω,
IB1= -IB2= -0.2A,
Storage Time
Fall Time
hFE-1 Classifications
O
Y
60-120
100-200
2
isc Website：www.iscsemi.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明