2SB995 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB995 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB995
DESCRIPTION
·With TO-220C package
·High current capacity
·Low collector saturation voltage
APPLICATIONS
·For audio frequency amplifier output
stage applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-100
-100
-6
UNIT
V
Open base
V
Open collector
V
-5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB995
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-100
-100
-6
TYP. MAX UNIT
Collector-emitter breakdown voltage IC=-30mA; IB=0
V
V
V
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=-1mA; IE=0
IE=-1mA; IC=0
IC=-3A;IB=-0.3 A
IC=-3A;IB=-0.3 A
VCB=-100V; IE=0
VEB=-5V; IC=0
-1.0
-1.5
-0.1
-0.1
240
V
V
mA
mA
IEBO
hFE-1
DC current gain
IC=-1A ; VCE=-5V
IC=-3A ; VCE=-5V
IC=-1A ; VCE=-5V
40
20
5
hFE-2
DC current gain
fT
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB995
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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