2SB995 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | 2SB995 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB995
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ IC= -4A
·Complement to Type 2SD1355
APPLICATIONS
·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-100
-100
-5
UNIT
V
V
V
Collector Current-Continuous
Base Current-Continuous
-5
A
IB
-0.5
A
Collector Power Dissipation
@TC=25℃
PC
40
W
℃
℃
Junction Temperature
Storage Temperature
150
TJ
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB995
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= -50mA; IB= 0
-100
V
IC= -4A; IB= -0.4A
IC= -4A; VCE= -5V
VCB= -100V; IE= 0
VEB= -5V; IC= 0
-2.0
-1.5
-100
-1.0
240
V
V
VCE
(sat)
VBE
(on)
ICBO
μA
mA
IEBO
hFE-1
hFE-2
COB
fT
DC Current Gain
IC= -1A; VCE= -5V
IC= -4A; VCE= -5V
IE= 0; VCB= -10V; ftest= 1MHz
IC= -1A; VCE= -5V
40
20
DC Current Gain
Output Capacitance
270
5
pF
Current-Gain—Bandwidth Prouct
MHz
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
isc Website：www.iscsemi.cn
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