2SA744 [ISC]
isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
| 型号： | 2SA744 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA744
DESCRIPTION
·High Power Dissipation-
: PC= 70W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type 2SC1402
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-80
UNIT
V
-80
V
-6
V
Collector Current-Continuous
Base Current-Continuous
-8
A
IB
-3
A
Collector Power Dissipation
@TC=25℃
PC
70
W
℃
℃
Tj
Junction Temperature
Storage Temperature
150
-65~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA744
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= -50mA ;IB= 0
-80
V
IC= -3A; IB= -0.3A
VCB= -80V; IE= 0
VEB= -6V; IC= 0
-1.5
-1.0
-1.0
V
VCE
(sat)
ICBO
mA
mA
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
IC= -3A ; VCE= -4V
IE= 0.5A ; VCE= -12V
30
Current-Gain—Bandwidth Product
15
MHz
Switching times
Rise Time
1.2
2.0
μs
μs
μs
tr
tstg
tf
IC= -3A ,RL= 4Ω, VCC= -12V
IB1= -0.2A; IB2= 0.1A
Storage Time
Fall Time
0.55
isc Website：www.iscsemi.cn
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