2SA746 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA746 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA746
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1115
APPLICATIONS
·For audio and general purpose
applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-80
UNIT
V
Open emitter
Open base
-80
V
Open collector
-6
V
-10
A
IB
Base current
-4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
W
℃
℃
Tj
150
Tstg
-65~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SA746
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-80
-6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA ;IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IE=-1mA ;IC=0
V
IC=-5A; IB=-0.5A
IC=-5A; IB=-0.5A
VCB=-80V; IE=0
VEB=-6V; IC=0
-2.0
-2.5
-0.1
-1.0
V
V
mA
mA
IEBO
hFE
DC current gain
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
30
fT
Transition frequency
15
MHz
Switching times
tr
tstg
tf
Rise time
1.2
3.3
0.8
μs
μs
μs
VCC=-12V;RL=4Ω;IC=-3A
IB1=-200mA,IB2=50mA
Storage time
Fall time
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA746
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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