2SA745 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA745 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA744/745/745A
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1402/1403/1403A
APPLICATIONS
·For power switching and general purpose
applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-80
UNIT
2SA744
2SA745
2SA745A
2SA744
2SA745
2SA745A
VCBO
Collector-base voltage
Open emitter
V
-100
-120
-80
VCEO
Collector-emitter voltage
Open base
V
-100
-120
-6
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
W
ꢀ
-8
IB
Base current
-3
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
70
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA744/745/745A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
CONDITIONS
MIN
-80
TYP.
MAX
UNIT
2SA744
2SA745
2SA745A
Collector-emitter
breakdown voltage
IC=-50mA ;IB=0
V
-100
-120
Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-1.5
-1.0
-1.0
V
2SA744
2SA745
2SA745A
VCB=-80V; IE=0
VCB=-100V; IE=0
VCB=-120V; IE=0
VEB=-6V; IC=0
Collector
ICBO
mA
mA
MHz
cut-off current
IEBO
hFE
fT
Emitter cut-off current
DC current gain
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
30
Transition frequency
15
Switching times
tr
ts
tf
Rise time
1.2
2.0
µs
µs
µs
IC=-3A;RL=4Ω
IB1=-0.2A; IB2=0.1A
VCC=-12V
Storage time
Fall time
0.55
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA744/745/745A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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