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2N5885 [ISC]

isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
2N5885
型号： 2N5885
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistors
ISC的硅NPN功率晶体管

晶体 晶体管 局域网
文件： 总2页 (文件大小：170K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2N5885/5886  
DESCRIPTION  
·DC Current Gain-  
: hFE= 20(Min)@IC= 10A  
·Low Saturation Voltage-  
: VCE(sat)= 1.0V(Max)@ IC= 15A  
·Complement to Type 2N5883/5884  
APPLICATIONS  
·Designed for general purpose power amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
PARAMETER  
VALUE  
60  
UNIT  
2N5885  
2N5886  
2N5885  
2N5886  
VCBO  
Collector-Base Voltage  
V
80  
60  
VCEO  
Collector-Emitter Voltage  
80  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
5
V
A
Collector Current-Connuous  
Collector Current-Peak  
Base Current-Continuous  
25  
50  
A
7.5  
A
PC  
TJ  
Collector Power Dissipation @TC=25℃  
Junction Temperature  
200  
200  
-65~200  
W
℃
℃
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.875  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2N5885/5886  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE  
PARAMETER  
CONDITIONS  
MIN  
60  
MAX  
UNIT  
2N5885  
2N5886  
Collector-Emitter  
Sustaining Voltage  
IC= 200mA ; IB= 0  
V
80  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC= 15A; IB= 1.5A  
IC= 25A; IB= 6.25A  
IC= 25A; IB= 6.25A  
IC= 10A ; VCE= 4V  
VCE= 30V; IB= 0  
1.0  
4.0  
2.5  
1.5  
2.0  
2.0  
V
V
V
V
-1  
(sat)  
VCE  
VBE  
-2  
(sat)  
(sat)  
VBE(  
)
on  
2N5885  
Collector  
ICEO  
mA  
mA  
Cutoff Current  
2N5886  
VCE= 40V; IB= 0  
VCE= 60V; VBE( )= 1.5V  
1.0  
10  
off  
2N5885  
VCE= 60V; VBE( 15VTC=150℃  
Collector  
of
ICEX  
Cutoff Current  
VCE= 80V; VB( )= 1.5V  
1.0  
10  
off  
2N5886  
VE= 0V; VBE( )= 1.5V,TC=150℃  
off  
2N585  
VCB= 60V; IE= 0  
1.0  
1.0  
1.0  
Collector  
Cutoff Current  
ICBO  
mA  
mA  
2N5886  
VCB= 80V; IE= 0  
IEBO  
hFE-1  
hFE-2  
hFE-3  
COB  
fT  
Emitter Cutoff Current  
DC Current Gain  
VEB= 5V; IC=0  
IC= 3A ; VCE= 4V  
35  
20  
4
DC Current Gain  
IC= 10A ; VCE= 4V  
IC= 25A ; VCE= 4V  
IE= 0;VCB= 10V;ftest= 1MHz  
IC= 1A ; VCE= 10V ;ftest= 1MHz  
100  
500  
DC Current Gain  
Output Capacitance  
Current-Gain—Bandwidth Product  
pF  
4
MHz  
Switching Times  
Rise Time  
0.7  
1.0  
0.8  
μs  
μs  
μs  
tr  
tstg  
tf  
IC= 10A; IB1= -IB2= 1A;VCC= 30V  
Storage Time  
Fall Time  
2
isc Website：www.iscsemi.cn  

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