2N5599 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N5599 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5597 2N5599 2N5601 2N5603
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-80
UNIT
2N5597
VCBO
Collector-base voltage
Open emitter
V
2N5599/5601
2N5603
-100
-120
-60
2N5597
VCEO
Collector-emitter voltage
Open base
Open collector
TC=25℃
V
2N5599/5601
2N5603
-80
-100
-5
VEBO
IC
Emitter-base voltage
Collector current
V
A
-2
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
20
W
℃
℃
150
Tstg
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
4.37
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5597 2N5599 2N5601 2N5603
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
2N5597
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-50mA ;IB=0
V
2N5599/5601
2N5603
-80
-100
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=-1A; IB=-0.1A
-1.0
-1.5
-0.1
-1.0
-0.1
2
90
V
VBE
IC=-1A ; VCE=-5V
VCB=Rated VCBO; IE=0
VCE= Rated VCEO,IB=0
VEB=-5V; IC=0
V
ICBO
ICEO
IEBO
mA
mA
mA
2N5597/5601
C current gain
70
30
60
50
hFE
IC=-1A ; VCE=-5V
2N5599/5603
2N5597/5601
Transition frequency
fT
IC=-0.5A ; VCE=-10V
MHz
2N5599/5603
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5597 2N5599 2N5601 2N5603
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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