2N5600 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5600 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5598 2N5600 2N5602 2N5604
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
80
UNIT
2N5598
VCBO
Collector-base voltage
Open emitter
V
2N5600/5602
2N5604
100
120
60
2N5598
VCEO
Collector-emitter voltage
Open base
Open collector
TC=25ꢀ
V
2N5600/5602
2N5604
80
100
5
VEBO
IC
Emitter-base voltage
Collector current
V
A
W
ꢀ
2
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
20
150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
4.37
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5598 2N5600 2N5602 2N5604
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5598
Collector-emitter
sustaining voltage
VCEO(SUS)
2N5600/5602
2N5604
IC=50mA ;IB=0
80
V
100
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=1A; IB=0.1A
1.0
1.5
0.1
1.0
0.1
200
90
V
VBE
IC=1A ; VCE=5V
V
ICBO
ICEO
IEBO
VCB=Rated VCBO; IE=0
VCE= Rated VCEO,IB=0
VEB=5V; IC=0
mA
mA
mA
2N5598/5602
DC current gain
70
30
60
50
hFE
IC=1A ; VCE=5V
2N5600/5604
2N5598/5602
Transition frequency
fT
IC=0.5A ; VCE=10V
MHz
2N5600/5604
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5598 2N5600 2N5602 2N5604
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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