2N5600 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5600 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector-emitter saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
2N5598
VCBO
Collector-base voltage
Open emitter
V
2N5600/5602
2N5604
80
100
80
2N5598
VCEO
Collector-emitter voltage
Open base
Open collector
TC=25℃
V
2N5600/5602
2N5604
100
120
5
VEBO
IC
Emitter-base voltage
Collector current
V
A
2
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
20
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
4.37
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5598
CONDITIONS
MIN
60
TYP.
MAX
UNIT
Collector-emitter
sustaining voltage
VCEO
IC=50mA ;IB=0
V
2N5600/5602
2N5604
80
100
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=1A; IB=0.1A
1.0
1.5
0.1
1.0
0.1
200
90
V
IC=1A ; VCE=5V
V
ICBO
ICEO
IEBO
VCB=Rated VCBO; IE=0
VCE= Rated VCEO,IB=0
VEB=5V; IC=0
mA
mA
mA
2N5598/5602
DC current gain
70
30
60
50
hFE
IC=1A ; VCE=5V
2N5600/5604
2N5598/5602
Transition frequency
fT
IC=0.5A ; VCE=10V
MHz
2N5600/5604
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604
PACKAGE OUTLINE
Fig.2 outline dimensions
JMnic
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