RT1P141T [ISAHAYA]

TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE; 晶体管，电阻器，用于切换应用NPN硅外延型


型号：	RT1P141T
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE 晶体管，电阻器，用于切换应用NPN硅外延型晶体电阻器晶体管开关
文件：	总3页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

〈Transistor〉

ＲＴ１Ｐ１４１Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

RT1P141X is

a one chip transistor

RT1P141U

RT1P141C

2.5

with built-in bias resistor,NPN type is RT1N141X.

1.6

0.8

0.4

0.5

1.5

0.5

FEATURE

・Built-in bias resistor (R1=10kΩ,R2=10kΩ).

①

②

①

②

③

APPLICATION

Inverted circuit,switching circuit,interface circuit,

driver circuit.

Equivalent circuit

JEITA：－

JEITA：SC-59

(OUT)

JEDEC：－

JEDEC：Similar to TO-236

Terminal Connector

①：Base

Terminal Connector

①：Base

(IN)

②：Emitter

③：Collector

(GND)

RT1P141M

RT1P141T

2.1

RT1P141S

4.0

0.425 1.25 0.425

0.8 0.2

0.2

①

0.1

②

③

②

③

0.45

1.27 1.27

① ② ③

JEITA：SC-70

JEDEC：－

JEITA：－

JEDEC：－

Terminal Connector

①：Base

Terminal Connector

①：Base

②：Emitter

①：Emitter

②：Collector

③：Base

②：Emitter

③：Collector

ISAHAYA ELECTRONICS CORPORATION

〈Transistor〉

ＲＴ１Ｐ１４１Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

MAXIMUM RATING (Ta=25℃)

RATING

SYMBOL

PARAMETER

UNIT

RT1P141T

RT1P141U

RT1P141M

-50

RT1P141C

RT1P141S

Ｖ_ＣＢＯ

Ｖ_ＥＢＯ

Ｖ_ＣＥＯ

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

-10

-50

Ｉ

-100

-200

Ｃ

Ｉ

Peak Collector current

Collector

ＣＭ

Ｐ_Ｃ

125（※）

125

150

450

dissipation(Ta=25℃)

Junction temperature

Storage temperature

Ｔｊ

+125

-55～+125

+150

℃

Ｔｓｔｇ

-55～+150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.

LIMIT

SYMBOL

Ｖ_{（ＢＲ）ＣＥＯ}

PARAMETER

TEST CONDITION

UNIT

MIN

-50

TYP

MAX

-0.1

C to E break down voltage

Collector cut off current

DC forward current gain

C to E saturation voltage

Input on voltage

I =-100μA，R_BE=∞

μA

－

Ｉ

V_CB=-50V，I _E=0

ＣＢＯ

ｈ_ＦＥ

Ｖ_{ＣＥ（ｓａｔ）}

Ｖ_{Ｉ（ＯＮ）}

Ｖ_{Ｉ（ＯＦＦ）}

Ｒ_１

V_CE=-5V，I _C=-10mA

_C=-10mA，I _B=-0.5mA

-0.1

-1.5

-1.1

-0.3

-3.0

V_CE=-0.2V，I _C=-5mA

V_CE=-5V，I _C=-100μA

Input off voltage

-0.8

7.0

Input resistance

kΩ

Ｒ_２／Ｒ_１

ｆ_Ｔ

Resistance ratio

0.9

1.0

1.1

Gain band width product

V_CE=-6V，I _E=10mA

150

MHz

TYPICAL CHARACTERISTICS

DC Forward Gain - Collector Current

Input On Voltage - Collector Current

1000

-10

-1

100

-0.1

-1

-10

-100

-1

-10

-100

Collector Currentꢀ ＩＣ（ｍＡ）

Collector Current - Input Off Voltage

-1000

-100

-10

-0

-0.4

-0.8

-1.2

-1.6

-2

Input Off Voltageꢀ ＶＩ（ＯＦＦ）（Ｖ）

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT1P141T [ISAHAYA]

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