RT1P144C [ISAHAYA]
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type; 晶体管,电阻器,用于切换应用NPN硅外延型型号: | RT1P144C |
厂家: | ISAHAYA ELECTRONICS CORPORATION |
描述: | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
文件: | 总3页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
〈Transistor〉
RT1P144X SERIES
Transistor With Resistor
ForSwitchingApplication
Silicon PNP EpitaxialType
DESCRIPTION
OUTLINE DRAWING ꢀꢀꢀꢀꢀꢀꢀUNIT:mm
RT1P144X is a onechiptransistor
RT1P144U
RT1P144C
with built-in biasresistor,NPN typeisRT1N144X.
1.6
0.8
2.5
0.4
0.4
0.5
1.5
0.5
FEATURE
・Built-inbiasresistor(R1=10kΩ,R2=47kΩ).
①
②
①
②
③
③
APPLICATION
Invertedcircuit,switching circuit,interfacecircuit,
driver circuit.
Equivalent circuit
C
ꢀꢀꢀꢀꢀꢀꢀꢀꢀJEITA:-
JEDEC:-
JEITA:SC-59
JEDEC:SimilartoTO-236
(OUT)
R1
B
TerminalConnector
①:Base
②:Emitter
TerminalConnector
①:Base
②:Emitter
(IN)
R2
③:Collector
③:Collector
E
(GND)
RT1P144M
2.1
RT1P144S
4.0
1.25
0.425
0.425
0.1
①
②
0.45
③
1.27 1.27
①
②
③
JEITA:SC-70
JEDEC:-
JEITA:-
JEDEC:-
TerminalConnector
①:Base
②:Emitter
TerminalConnector
①:Emitter
②:Collector
③:Base
③:Collector
ISAHAYA
ꢀELECTRONICSꢀCORPORATION
〈Transistor〉
RT1P144X SERIES
Transistor With Resistor
ForSwitchingApplication
Silicon PNP EpitaxialType
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
UNIT
RT1P144U
RT1P144M
RT1P144C
RT1P144S
V
Collectorto Basevoltage
EmittertoBasevoltage
Collectorto Emittervoltage
Collectorcurrent
-50
-6
V
V
CBO
V
EBO
V
-50
V
CEO
I
-100
-200
200
mA
mA
ꢀC
I
PeakCollectorcurrent
Collectordissipation(Ta=25℃)
Junctiontemperature
ꢀCM
P
150
+150
450
mW
C
Tj
+150
-55~+150
℃
℃
Tstg
Storagetemperature
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
MAX
-0.1
V
C to E break down voltage
Collectorcutoffcurrent
DC forward current gain
C to E saturation voltage
Inputonvoltage
I =-100μA,RBE=∞
ꢀC
-50
V
μA
-
V
(BR)CEO
I
VCB=-50V,I =0
ꢀE
ꢀCBO
h
VCE=-5V,I =-5mA
ꢀC
50
FE
V
I =-10mA,I =-0.5mA
ꢀC ꢀB
-0.1
-1.2
-0.7
10
-0.3
-1.8
CE(sat)
V
VCE=-0.2V,I =-5mA
ꢀC
V
I(ON)
V
Inputoffvoltage
VCE=-5V,I =-100μA
ꢀC
-0.4
7
V
I(OFF)
R
Inputresistance
13
kΩ
1
R/R
2
Resistanceratio
4.2
4.7
5.1
1
f
T
Gain band width product
VCE=-6V,I =10mA
ꢀE
150
MHz
ꢀTYPICAL CHARACTERISTICS
DC forward current gain-Collector Current
Input On Voltage - Collector Current
-10
-1
1000
100
10
-0.1
1
-1
-10
Collector CurrentꢀIC(mA)
-100
-1
-10
Collector CurrentꢀIC(mA)
-100
Collector Current - Input Off Voltage
-1000
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
-2
Input Off VoltageꢀVI(OFF)(V)
ISAHAYA
ꢀELECTRONICSꢀCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
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Jan.2003
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