RT1P14BC [ISAHAYA]

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type; 晶体管,电阻器,用于切换应用NPN硅外延型
RT1P14BC
型号: RT1P14BC
厂家: ISAHAYA ELECTRONICS CORPORATION    ISAHAYA ELECTRONICS CORPORATION
描述:

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
晶体管,电阻器,用于切换应用NPN硅外延型

晶体 电阻器 晶体管
文件: 总3页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
〈Transistor〉  
RT1P14BX SERIES  
Transistor With Resistor  
For Switching Application  
Silicon PNP Epitaxial Type  
DESCRIPTION  
OUTLINE DRAWING  
UNIT:mm  
RT1P14BX is  
a one chip transistor  
RT1P14BU  
RT1P14BC  
2.5  
with built-in bias resistor,NPN type is RT1N14BX.  
1.6  
0.8  
0.4  
0.4  
0.5  
1.5  
0.5  
FEATURE  
・Built-in bias resistor (R2=10kΩ).  
APPLICATION  
Inverted circuit,switching circuit,interface circuit,  
driver circuit.  
Equivalent circuit  
C
JEITA:-  
JEITA:SC-59  
(OUT)  
JEDEC:-  
JEDEC:Similar to TO-236  
B
Terminal Connector  
①:Base  
Terminal Connector  
①:Base  
(IN)  
R2  
②:Emitter  
②:Emitter  
E
③:Collector  
③:Collector  
(GND)  
RT1P14BM  
RT1P14BS  
4.0  
2.1  
0.425 1.25 0.425  
0.1  
0.45  
1.27 1.27  
① ② ③  
JEITA:SC-70  
JEDEC:-  
JEITA:-  
JEDEC:-  
Terminal Connector  
①:Base  
Terminal Connector  
①:Emitter  
②:Emitter  
②:Collector  
③:Base  
③:Collector  
ISAHAYA ELECTRONICS CORPORATION  
〈Transistor〉  
RT1P14BX SERIES  
Transistor With Resistor  
For Switching Application  
Silicon PNP Epitaxial Type  
MAXIMUM RATING (Ta=25℃)  
RATING  
SYMBOL  
PARAMETER  
UNIT  
RT1P14BU  
RT1P14BM  
RT1P14BC  
RT1P14BS  
CBO  
EBO  
CEO  
Collector to Base voltage  
Emitter to Base voltage  
Collector to Emitter voltage  
Collector current  
-50  
-6  
V
V
-50  
V
-100  
-200  
200  
mA  
mA  
Peak Collector current  
Collector dissipation(Ta=25℃)  
Junction temperature  
Storage temperature  
CM  
C  
Tj  
150  
+150  
450  
mW  
+150  
Tstg  
-55~+150  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
LIMIT  
TYP  
SYMBOL  
(BR)CEO  
PARAMETER  
TEST CONDITION  
UNIT  
MIN  
-50  
MAX  
-0.1  
C to E break down voltage  
Collector cut off current  
DC forward current gain  
C to E saturation voltage  
Emitter-base resistance  
Gain band width product  
I =-100μA,RBE=∞  
C
V
μA  
VCB=-50V,I E =0  
CBO  
FE  
CE(sat)  
2  
VCE=-5V,I C =-5mA  
30  
7
I
C =-10mA,I B =-0.5mA  
-0.3  
13  
V
10  
kΩ  
MHz  
T  
VCE=-6V,I E =10mA  
150  
TYPICAL CHARACTERISTICS  
DC forward current gain-Collector current  
Collector current-Input off voltage  
1000  
-1000  
VCE=-5V  
VCE=-5V  
100  
-100  
10  
-10  
-1  
-10  
-100  
-0  
-0.5  
-1  
-1.5  
-2  
Collector current IC[mA]  
Input off voltage VI(OFF)[V]  
Input on voltage-Collector current  
-10  
VCE=-200mV  
-1  
-0.1  
-0.1  
-1  
-10  
-100  
Collector current IC[mA]  
ISAHAYA ELECTRONICS CORPORATION  
Marketing division, Marketing planning department  
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan  
Keep·IsSaAfHetAyYfAirEstleicntryonoiucsr cCiorrcpuoirtadtioensipguntss!the maximum effort into making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures  
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or  
mishap.  
Notes regarding these materials  
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the  
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging  
·IISSAAHHAAYYAA oErlethcitrrdonpiacrstyC. orporation assumes no responsibility for any damage, or infringement of any third party's rights ,  
·Aorlilgiinnfaotrimngatinionthecounsteainoef daniny pthroesdeucmt daatetari,adlsi,aginrcalmudsi,ncghparrotsdourctcidrcautait,adpiapglicraamtiosnaenxdamchpalertss,croenptareinseedntinintfhoermseatmioanteornialpsr.oducts  
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice  
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics  
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed  
·hISeAreHinA.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used  
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an  
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,  
·TsuhcehparisorawppriattreantuaspoprrosvyaslteofmIsSAfoHrAtrYaAnsEploercttartoionnic,sveChoircpuolarar,timonedisicnael,caeesrsoasrpyatcoer,enpuricnlteaorr,roerpurondduecrseeian rwehpoelaeteorruinsep.art these  
·Imf athteersiaelsp.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a  
license from the Japanese government and cannot be imported into a country other than the approved destination. Any  
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is  
·Pprleoahsibeitecdo.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these  
materials or the products contained therein.  
Jan.2003  

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