IRGR3B60KD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGR3B60KD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总13页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94601A
IRGR3B60KD2
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
IC = 4.2A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.9V
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D-Pak
Absolute Maximum Ratings
Parameter
Max.
600
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
V
A
IC @ TC = 25°C
7.8
IC @ TC = 100°C Continuous Collector Current
4.2
ICM
Pulse Collector Current (Ref.Fig.C.T.5)
15.6
15.6
6.0
Clamped Inductive Load current
Diode Continous Forward Current
ILM
IF @ Tc = 25°C
IF @ Tc = 100°C Diode Continuous Forward Current
3.2
IFM
Diode Maximum Forward Current
Gate-to-Emitter Voltage
15.6
±20
VGE
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
52
W
21
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
Units
RθJC
RθJC
RθJA
Wt
Junction-to-Case- IGBT
°C/W
Junction-to-Case- Diode
8.8
Junction-to-Ambient, (PCB Mount)
50
Weight
–––
g
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1
03/24/03
IRGR3B60KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
600
—
—
—
3.5
—
—
—
—
—
—
—
—
0.32
1.9
2.2
4.5
-8.5
1.9
1.0
200
1.5
1.5
—
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 3.0A, VGE = 15V
V/°C
5,6,7
9,10,11
9,10,11
12
2.4
2.6
5.5
—
IC = 3.0A, VGE = 15V, TJ = 150°C
V
VGE(th)
V
V
V
CE = VGE, IC = 250µA
Gate Threshold Voltage
∆
V
∆
GE(th)/ TJ
CE = VGE, IC = 1mA (25°C-150°C)
CE = 50V, IC = 3.0A, PW = 80µs
Threshold Voltage temp. coefficient
Forward Transconductance
mV/°C
S
gfe
—
ICES
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
150
500
1.8
1.8
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 3.0A, VGE = 0V
VFM
Diode Forward Voltage Drop
V
8
IF = 3.0A, VGE = 0V, TJ = 150°C
IGES
V
GE = ±20V, VCE = 0V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
23
Qg
IC = 3.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
1.5
6.6
62
20
2.3
9.9
75
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
nC
µJ
ns
CT1
VGE = 15V
IC = 3.0A, VCC = 400V
CT4
CT4
V
GE = 15V, RG = 100Ω, L = 2.5mH
39
50
TJ = 25°C
100
18
120
22
IC = 3.0A, VCC = 400V
Ω
VGE = 15V, RG = 100 , L = 2.5mH
Rise time
15
21
td(off)
tf
TJ = 25°C
Turn-Off delay time
110
68
120
80
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 3.0A, VCC = 400V
CT4
13,15
WF1,WF2
14,16
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
91
100
140
230
22
Ω
VGE = 15V, RG = 100 , L = 2.5mH
98
µJ
ns
TJ = 150°C
190
18
IC = 3.0A, VCC = 400V
V
GE = 15V, RG = 100Ω, L = 2.5mH
Rise time
17
22
td(off)
tf
TJ = 150°C
Turn-Off delay time
120
91
140
105
—
WF1
WF2
Fall time
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
190
23
V
CC = 30V
22
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
6.6
—
f = 1.0MHz
TJ = 150°C, IC = 15.6A, Vp = 600V
VCC=500V,VGE=+15V to 0V,RG = 100
TJ = 150°C, Vp = 600V, RG = 100Ω
VCC=360V,VGE = +15V to 0V
TJ = 150°C
4
FULL SQUARE
Ω
CT2
CT3
SCSOA
Short Circuit Safe Operating Area
10
—
—
WF4
17,18,19
20,21
CT4,WF3
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
38
77
44
84
µJ
ns
A
VCC = 400V, IF = 3.0A, L = 2.5mH
Ω
VGE = 15V, RG = 100
Irr
Diode Peak Reverse Recovery Current
4.8
5.3
Energy losses include "tail" and diode reverse recovery.
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
footprint and soldering techniques refer to application note #AN-994.
2
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IRGR3B60KD2
10
8
60
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10
1
10 µs
100 µs
1ms
10ms
0.1
0.01
DC
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
CE
V
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGR3B60KD2
25
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
25
25
V
= 18V
GE
-40°C
25°C
150°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
20
15
10
5
0
0
0
2
4
6
8
10
12
0.0
1.0
2.0
(V)
3.0
4.0
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRGR3B60KD2
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 1.5A
= 3.0A
= 6.0A
I
I
I
= 1.5A
= 3.0A
= 6.0A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
25
20
15
10
5
20
18
16
14
12
10
8
T
= 25°C
J
I
I
I
= 1.5A
= 3.0A
= 6.0A
CE
CE
CE
T
= 150°C
J
6
4
2
0
0
0
5
10
15
20
5
10
15
20
V
, Gate-to-Source Voltage (V)
V
(V)
GS
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRGR3B60KD2
250
1000
100
10
200
150
100
50
E
ON
td
t
OFF
E
OFF
F
t
R
td
ON
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
I
(A)
I
(A)
C
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
250
200
150
100
50
1000
100
10
E
ON
td
OFF
E
OFF
t
F
t
R
td
ON
0
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
Ω
R
(
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 3.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 3.0A; VGE= 15V
6
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IRGR3B60KD2
6
5
4
3
2
1
6
5
4
3
2
1
0
R
100Ω
G =
R
200
Ω
G =
R
330
Ω
G =
R
470
Ω
G =
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
R
(
Ω)
I
(A)
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 3.0A
TJ = 150°C
400
350
300
250
200
150
100
50
6
5
4
3
2
1
0
100Ω
6.0A
200Ω
330Ω
470
Ω
3.0A
1.5A
0
0
50
100 150 200 250 300 350
50
100
150
200
250
300
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
IF = 3.0A; TJ = 150°C
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7
IRGR3B60KD2
70
60
50
40
30
20
100
Ω
200Ω
330Ω
470Ω
0
1
2
3
4
5
6
7
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
1000
16
14
12
10
8
300V
Cies
400V
100
Coes
6
10
Cres
4
2
1
0
0
20
40
60
80
100
0
2
4
6
8
10
12
14
V
(V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 3.0A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRGR3B60KD2
10
D = 0.50
1
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.20
0.10
0.05
τJ
τ
Cτ
τJ
τ
0.990
1.412
0.000087
1 τ1
Ci= τi/Ri
τ
2τ2
0.000426
0.1
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
100
10
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
1
0.10
0.05
τ
J τJ
τ
τ
2.301
4.212
2.278
0.000156
0.001440
0.028166
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.02
0.01
Ci= τi/Ri
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGR3B60KD2
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGR3B60KD2
600
500
400
300
200
100
0
12
600
500
400
300
200
100
0
9
tf
tr
11
10
9
7.5
6
Vce
Vce
Ic e
8
90% Ice
10% Ice
90% Ice
7
5% Vce
5% Ice
6
4.5
3
5
4
3
Ice
2
1.5
0
5% Vce
1
0
Eon
Eoff Loss
-1
-2
Loss
-100
-100
-1.5
0.8
1
1.2
Time (uS)
1.4
0.3
0.5
0.7
0.9
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
500
450
400
350
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
100
15
12
9
0
Vce
-100
-200
-300
-400
-500
-600
QRR
6
10% Peak
IRR
tRR
Ice
3
0
Peak
IRR
-3
0
0
-6
30
40
50
60
70
0.00
0.10
0.20
Time (uS)
0.30
0.40
0.50
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGR3B60KD2
TO-252AA (D-Pak) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
0.51 (.020)
MIN.
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
4.57 (.180)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
TO-252AA (D-Pak) Part Marking Information
Notes: This part marking information applies to devices producedbefore 02/26/2001
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 9U1P
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR = 0
IRFU120
016
1P
WE EK = 16
9U
AS S E MB L Y
LOT CODE
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB LY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
34
12
LINE A
ASSEMBLY
LOT CODE
12
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IRGR3B60KD2
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/03
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13
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