IRGR4045DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGR4045DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGR4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
IC 6.0A, TC = 100°C
Tjmax = 175°C
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
G
VCE(on) typ. 1.7V
E
n-channel
C
E
G
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
D-Pak
IRGR4045DPbF
G
Gate
C
E
Colletor
Emitter
Absolute Maximum Ratings
Parameter
Units
V
Max.
600
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
12
IC@ TC = 25°C
IC@ TC = 100°C
ICM
6.0
18
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
24
ILM
A
8.0
4.0
24
IF@TC=25°C
IF@TC=100°C
IFM
± 20
± 30
77
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
39
°C
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max.
1.9
Units
R
R
R
R
JC
JC
JA
JA
6.8
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
50
110
*Qualification standards can be found at http://www.irf.com/
1
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October 10, 2012
IRGR4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
R ef .F ig
V
V
GE = 0V, Ic =100 μA
GE = 0V, Ic = 250μA ( 25 -175 oC )
V(BR)CES
600
—
—
V
Collector-to-Emitter Breakdown Voltage
(BR)CES/ T J
T emperature Coeff. of B reakdown Voltage
CT 6
V
—
—
—
0.36
1.7
—
2.0
—
V/°C
IC = 6.0A, VGE = 15V, TJ = 25°C
IC = 6.0A, VGE = 15V, TJ = 150°C
5,6,7,9,
10 , 11
VCE(on)
Collector-to-Emitter Saturation Voltage
2.07
V
IC = 6.0A, VGE = 15V, TJ = 175°C
—
2.14
—
—
VCE = VGE, IC = 150μA
VCE = VGE, IC = 250μA ( 25 -175 oC )
VGE(th)
Gate Threshold Voltage
3.5
6.5
V
9 ,10 ,11,12
-13
VGE (t h)/ TJ
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
—
25
mV/°C
S
VCE = 25V, I = 6.0A, PW =80 s
gfe
5.8
—
C
VGE = 0V,VCE = 600V
ICES
VFM
IGES
μA
Collector-to-Emitter Leakage Current
V
GE = 0V, VCE = 600V, TJ =175°C
8
—
—
—
250
IF = 6.0A
1.60 2.30
V
Diode Forward Voltage Drop
IF = 6.0A, TJ = 175°C
VGE = ± 20 V
—
—
1.30
—
—
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
R ef .F ig
24
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
3.1
6.4
56
19.5
4.65
9.6
86
143
229
35
15
93
22
—
IC = 6.0A
nC VCC = 400V
VGE = 15V
CT 1
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
IC = 6.0A, VCC = 400V, VGE = 15V
CT 4
CT 4
122
178
27
μJ RG = 47 , L=1mH, LS= 150nH, TJ = 25°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
11
ns RG = 47 , L=1mH, LS= 150nH
td(off)
tf
Turn-Off delay time
Fall time
75
TJ = 25°C
17
13 , 15
CT 4
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
140
189
329
26
IC = 6.0A, VCC = 400V, VGE = 15V
—
μJ RG = 47 , L=1mH, LS= 150nH, TJ = 175°C
WF1,WF2
14 ,16
E nergy los s es include tail and diode revers e recovery
—
—
IC = 6.0A, VCC = 400V
CT 4
12
—
ns RG = 47 , L=1mH, LS= 150nH
WF1,WF2
td(off)
tf
Turn-Off delay time
Fall time
95
—
TJ = 175°C
32
—
23
Cies
Coes
Cres
Input Capacitance
350
29
—
VGE = 0V
pF
Output Capacitance
Reverse Transfer Capacitance
—
VCC = 30V
10
—
f = 1Mhz
4
TJ = 175°C, IC = 24A
VCC = 500V, Vp =600V
CT 2
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
RG = 100 , VGE = +20V to 0V
22
VCC = 400V, Vp =600V
SCSOA
Short Circuit Safe Operating Area
—
5
—
μs
CT 3, WF 4
17, 18 , 19
RG = 100 , VGE = +15V to 0V
Erec
trr
Reverse recovery energy of the diode
Diode Reverse recovery time
—
—
—
178
74
—
—
—
μJ TJ = 175oC
ns
A
VCC = 400V, IF = 6.0A
20,21
WF3
VGE = 15V, Rg = 47 , L=1mH, LS=150nH
Irr
Peak Reverse Recovery Current
12
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47
Pulse width limited by max. junction temperature.
R is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
2
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IRGR4045DPbF
14
12
10
8
80
70
60
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10μsec
100μsec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
10
100
(V)
1000
1
10
100
1000
V
(V)
CE
V
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
Fig. 3 - Forward SOA,
TC = 25°C, TJ 175°C, VGE = 15V
20
15
10
5
20
15
10
5
Top
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom V
Bottom
V
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
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3
IRGR4045DPbF
20
20
18
16
14
12
10
8
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom
V
15
10
5
GE
-40°C
25°C
175°C
6
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
10
10
8
6
4
2
0
8
6
4
2
0
I
I
I
= 3.0A
= 6.0A
= 12A
I
I
I
= 3.0A
= 6.0A
= 12A
CE
CE
CE
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
10
8
T = 25°C
J
T = 175°C
J
I
I
I
= 3.0A
CE
CE
CE
6
= 6.0A
= 12A
4
6
4
2
2
0
0
4
6
8
10
12
14
16
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
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IRGR4045DPbF
400
350
300
250
200
150
100
50
1000
100
10
td
OFF
t
F
E
OFF
td
ON
t
R
E
ON
1
0
2
4
6
I
8
10
12
14
2
4
6
8
10
12
14
I
(A)
C
(A)
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V.
220
200
1000
100
10
E
OFF
180
td
OFF
160
t
F
E
ON
140
120
100
80
td
ON
t
R
60
1
0
25
50
75
100
125
0
25
50
75
()
100
125
R
G
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
22
20
18
16
14
12
10
8
30
25
R
10
G =
20
15
10
5
R
22
G =
R
R
47
G =
100
G =
6
0
0
25
50
75
(
100
125
2
4
6
8
10
12
14
I
(A)
R
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C
TJ = 175°C; IF = 6.0A
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5
IRGR4045DPbF
1200
1000
800
20
18
16
14
12
10
8
12A
22
10
47
6.0A
600
100
400
3.0A
200
6
0
500
1000
1500
0
200
400
600
800 1000 1200
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
20
350
300
250
200
150
100
50
T
sc
40
30
20
10
15
R
R
= 10
G
G
I
sc
= 22
= 47
10
5
R
G
R
= 100
G
0
8
10
12
14
(V)
16
18
2
4
6
8
10
12
14
I
(A)
V
GE
F
Fig. 22- Typ. VGE vs. Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
14
12
10
8
Cies
V
V
= 400V
= 300V
CES
CES
Coes
Cres
6
4
2
1
0
0
100
200
V
300
(V)
400
500
0
2
4
6
8
10
12
14
Q
, Total Gate Charge (nC)
CE
G
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
VGE= 0V; f = 1MHz
6
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IRGR4045DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.0301
0.7200
0.7005
0.4479
0.000004
0.000067
0.000898
0.005416
0.1
J J
C
0.02
0.01
11
Ci= iRi
2 2
33
44
SINGLE PULSE
0.01
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.2056
1.4132
3.3583
1.8245
0.000019
0.000095
0.001204
0.009127
J J
C
0.02
0.01
11
Ci= iRi
2 2
33
44
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGR4045DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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IRGR4045DPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
30
25
tr
TEST
CURRENT
20
tf
90% test
current
15
6
90% ICE
10
4
10% test
current
5% ICE
5% VCE
5
2
5% VCE
0
0
Eoff Loss
Eon Loss
-5
-100
-100
-2
4.3
4.5
4.7
-0.2
0
0.2 0.4 0.6 0.8
1
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
100
15
80
70
60
50
40
30
20
10
0
VCE
450
400
350
300
250
200
150
100
50
0
-100
-200
10
5
QRR
tRR
0
10%
Peak
IRR
ICE
-300 Peak
IRR
-5
-400
-10
-15
-20
-500
-10
-20
-600
0
-0.05
0.05
0.15
0.25
-2 -1 0 1 2 3 4 5 6 7 8
time (µS)
Time (uS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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9
IRGR4045DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGR4045DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2012
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11
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