IRGR4607DTRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2;型号: | IRGR4607DTRRPBF |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 栅 功率控制 晶体管 |
文件: | 总16页 (文件大小:754K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
C
IC = 7.0A, TC =100°C
E
E
C
G
E
G
C
tSC 5µs, TJ(max) = 175°C
CE(ON) typ. = 1.75V @ IC = 4.0A
G
G
E
IRGB4607DPbF
TO-220AB
IRGR4607DPbF
D-Pak
IRGS4607DPbF
D2Pak
V
n-channel
Applications
• Industrial Motor Drive
• UPS
G
Gate
C
E
Collector
Emitter
• Solar Inverters
• Welding
Features
Benefits
Low VCE(ON) and Switching Losses
5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
Standard Pack
Form
Tube
Orderable Part Number
Quantity
75
2000
3000
3000
50
IRGR4607DPbF
D-Pak
IRGR4607DPbF
IRGR4607DTRPbF
IRGR4607DTRLPbF
IRGR4607DTRRPbF
IRGS4607DPBF
IRGS4607DTRRPBF
IRGS4607DTRLPBF
IRGB4607DPBF
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Tape and Reel Right
Tape and Reel Left
Tube
IRGS4607DPBF
D2Pak
800
800
50
IRGB4607DPBF
TO-220AB
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
600
11
7.0
V
Continuous Collector Current
ICM
ILM
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
12
16
8.0
5.0
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
16
±20
±30
58
V
PD @ TC = 25°C
PD @ TC = 100°C
W
Maximum Power Dissipation
29
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in.
10 lbf·in (1.1 N·m)
1
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IRGR/S/B4607DPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
–––
0.50
Max.
2.6
8.3
Units
Thermal Resistance, Junction-to-Case (IGBT)
Thermal Resistance, Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
RJC (IGBT)
RJC (Diode)
RCS
–––
°C/W
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)
–––
–––
–––
–––
–––
–––
50
40
62
RJA
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
0.52
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 250µA (25°C-175°C)
—
—
—
1.75
2.15
2.20
—
2.05
—
—
IC = 4.0A, VGE = 15V, TJ = 25°C
V
V
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
IC = 4.0A, VGE = 15V, TJ = 150°C
IC = 4.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 100µA
Gate Threshold Voltage
4.0
6.5
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-19
—
mV/°C VCE = VGE, IC =100µA (25°C-175°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
2.2
0.50
100
—
1.7
1.5
—
25
—
±100
2.3
—
S
µA
V
V
V
CE = 50V, IC = 4.0A, PW = 20µs
GE = 0V, VCE = 600V
GE = 0V, VCE = 600V, TJ = 175°C
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
nA VGE = ±20V
V
IF = 4.0A
IF = 4.0A, TJ = 175°C
2
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IRGR/S/B4607DPbF
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
Typ.
Max Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
9.0
3.0
4.0
140
62
202
27
15
—
IC = 4.0A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
nC
µJ
VCC = 300V
IC = 4.0A, VCC = 400V, VGE = 15V
RG = 100, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
µJ
120
10
220
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
92
312
24
—
—
—
—
—
IC = 4.0A, VCC = 400V, VGE = 15V
RG = 100, TJ = 175°C
Energy losses include tail & diode
reverse recovery
27
ns
td(off)
Turn-Off delay time
81
tf
Fall time
—
—
—
—
14
250
20
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 16A
7.1
FULL SQUARE
V
CC = 480V, Vp ≤ 600V
VGE = +20V to 0V
CC = 400V, Vp ≤ 600V
RBSOA
Reverse Bias Safe Operating Area
V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
7.4
48
—
—
—
µJ
ns
A
VCC = 400V, IF = 4.0A
VGE = 15V, Rg = 100
Irr
Peak Reverse Recovery Current
5.1
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
3
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IRGR/S/B4607DPbF
14
12
10
8
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 29W
6
4
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
100
10
1
10
1
10µsec
100µsec
1msec
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
10
100
1000
1
10
100
V
(V)
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
4
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IRGR/S/B4607DPbF
16
12
8
16
12
8
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
4
4
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
16
30
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
14
12
10
8
175°C
25°C
-40°C
25
20
15
10
5
6
4
2
0
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
(V)
V
(V)
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
6
5
6
5
I
= 8.0A
= 4.0A
= 2.0A
I
= 8.0A
= 4.0A
= 2.0A
CE
CE
I
I
CE
4
3
2
1
0
4
3
2
1
0
CE
I
I
CE
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
5
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IRGR/S/B4607DPbF
16
12
8
6
5
4
3
2
1
0
I
= 8.0A
= 4.0A
= 2.0A
CE
T = 25°C
J
I
CE
T = 175°C
J
I
CE
4
0
4
6
8
10
V
12
(V)
14
16
18
5
10
15
20
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
1000
100
10
600
500
400
300
200
100
0
E
td
ON
OFF
E
OFF
td
ON
t
R
t
F
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
I
(A)
I
(A)
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V
250
100
td
200
OFF
E
ON
td
ON
150
100
10
t
F
E
t
OFF
R
50
0
1
0
20
40
Rg (
60
80
100
0
20
40
60
80
100
)
R
( )
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V
6
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IRGR/S/B4607DPbF
14
12
10
8
12
10
8
10
R
G =
R
22
G =
R
R
47
G =
G =
6
6
4
4
2
3
4
5
(A)
6
7
8
0
20
40
60
80
100
I
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
12
10
8
300
250
200
150
100
10
8.0A
22
4.0A
47
6
100
2.0A
4
200
400
600
800
1000
200
400
600
800
1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 4.0A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
V
V
25
20
15
10
5
25
20
15
10
5
120
= 10
R
G
R
I
T
sc
sc
100
80
60
40
20
= 22
G
= 47
R
G
G
R
= 100
0
0
9
10
11
12
V
13
14
15
16
2
4
6
8
(V)
I
(A)
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 25°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
7
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IRGR/S/B4607DPbF
1000
100
10
16
14
12
10
8
V
V
= 400V
CES
= 300V
CES
Cies
6
Coes
Cres
4
2
1
0
0
100
200
300
(V)
400
500
600
0
2
4
6
8
10
V
Q
, Total Gate Charge (nC)
G
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 4.0A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
10
D = 0.50
1
0.20
0.10
Ri (°C/W)
0.269077
0.909352
0.901247
0.520324
i (sec)
0.000044
0.000062
0.001172
0.010981
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.1
J J
CC
0.02
0.01
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
100
10
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000094
0.000484
0.000971
0.017217
1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
0.818307
2.548997
2.967111
1.975585
J J
CC
0.02
0.01
1 1
2 2
0.1
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGR/S/B4607DPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
9
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IRGR/S/B4607DPbF
600
500
400
300
200
100
0
12
10
600
500
400
300
12
10
8
tr
tf
8
TEST
CURRENT
)
6
)
)
6
)
V
(
A
(
V
(
A
(
E
C
V
ICE
E
80% ICE
ICE
C
4
V
200
100
0
4
10% VCE
90% ICE
10%ICE
2
2
10% VCE
10% ICE
0
0
Eon Loss
0.3
Eoff Loss
-100
-2
-100
-0.3
-2
-0.3
0
0.6
0
0.3
0.6
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
30
6
25
20
15
10
5
4
2
QRR
t
VCE
)
A
(
)
V
(
0
e
ICE
c
I
e
c
200
100
0
V
-2
-4
-6
Peak
IRR
0
-100
-5
-5
0
5
10
-0.10 0.00 0.10 0.20 0.30 0.40
time (µs)
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
10
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IRGR/S/B4607DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
E X A M P L E :
T H I S I S A N IR F R 1 2 0
P A R T
N
U
M
B
E R
W
IT H A S S E M
B
L Y
I N T E R N A T IO
R E C T IF I E R
N
A L
L O
T
C
O
D
E
1 2 3 4
D
A T E
C
O
D
E
I R
F
U
1
2
0
A S S E M
B
L E D
O
N
W
W
1 6 , 1 9 9 9
Y E A R
9
=
1 9 9 9
L O
G
O
9
1
6
A
I N T H
E
A S S E M
B
L Y L IN
E
"A "
1
2
3
4
W
E E K 1 6
L I N
E
A
A S S E M
B
L Y
L O
T
C
O
D
E
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4607DPbF
D-Pak (TO-252AA) Tape and Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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IRGR/S/B4607DPbF
D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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February 6, 2014
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D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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February 6, 2014
IRGR/S/B4607DPbF
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E
X A
M
P
L E
:
T H IS IS
A
D
N
IR
F
1 0 1 0
P
A R T N U M B E R
L O
T
S
C
O
E
1 7 8 9
IN T E
R
C
N
A
T IO
T IF IE
L O
N A L
R
R
E
A
S
E
M
B
L E
D
O
N
W
W
1 9 , 2 0 0 0
G
O
IN T H
E
A
S
S
E
M
B
L Y L IN "C
E
"
D
A T E C O D E
Y E
A
R
0
=
2 0 0 0
N
o
t e : "P
in
"
in
a
s s e m
b
ly lin
e
F
p
o
s it io
n
A
L O
S
S
T
E M B L Y
C O D E
W
E E K 1 9
d
ic a t e s "L e a d
-
r e e "
L IN
E C
TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4607DPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D-Pak
D2Pak
MSL1
MSL1
N/A
Moisture Sensitivity Level
RoHS Compliant
TO-220
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
16
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© 2014 International Rectifier
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February 6, 2014
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