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IRFR3518TRRPBF [INFINEON]

Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
IRFR3518TRRPBF
型号： IRFR3518TRRPBF
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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PD - 94523  
IRFR3518  
IRFU3518  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
RDS(on) max  
ID  
80V  
29mW  
30A  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3518  
I-Pak  
IRFU3518  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
80  
V
VGS  
Gate-to-Source Voltage  
20  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
38  
27  
A
150  
PD @TC = 25°C  
Power Dissipation  
110  
W
Linear Derating Factor  
0.71  
W/°C  
V/ns  
dv/dt  
TJ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.2  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.4  
Junction-to-Ambient (PCB mount)†  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through † are on page 10  
www.irf.com  
1
09/23/02  
IRFR3518/IRFU3518  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
80 ––– –––  
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA †  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
2.0  
24  
29  
mΩ VGS = 10V, ID = 18A „  
––– 4.0  
V
VDS = VGS, ID = 250µA  
––– ––– 20  
––– ––– 250  
––– ––– 200  
––– ––– -200  
VDS = 80V, VGS = 0V  
IDSS  
Drain-to-Source Leakage Current  
µA  
VDS = 64V, VGS = 0V, TJ = 150°C  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
VGS = 20V  
nA  
IGSS  
VGS = -20V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 25V, ID = 18A  
ID = 18A  
gfs  
34  
––– –––  
37 56  
S
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
11 –––  
12 –––  
12 –––  
25 –––  
37 –––  
13 –––  
nC VDS = 40V  
VGS = 10V „  
VDD = 40V  
ID = 18A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 9.1Ω  
VGS = 10V „  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 1710 –––  
––– 270 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
33 –––  
pF  
ƒ = 1.0MHz  
––– 1780 –––  
––– 170 –––  
––– 330 –––  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 64V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 64V ꢀ  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
–––  
–––  
–––  
Max.  
160  
18  
Units  
mJ  
EAS  
IAR  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
11  
mJ  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
38  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
––– ––– 150  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 77 –––  
––– 210 –––  
V
TJ = 25°C, IS = 18A, VGS = 0V „  
ns  
TJ = 25°C, IF = 18A  
Qrr  
ton  
nC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
www.irf.com  
IRFR3518/IRFU3518  
1000  
100  
10  
1000  
VGS  
VGS  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
4.5V  
TOP  
TOP  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
4.5V  
100  
10  
1
BOTTOM  
BOTTOM  
4.5V  
4.5V  
1
0.1  
0.01  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
°
T = 25  
J
C
T = 175  
J
C
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
DS  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000.00  
100.00  
10.00  
3.0  
38A  
=
I
D
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 25°C  
J
T
= 175°C  
J
V
= 25V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
1.00  
4.0  
6.0  
V
8.0  
10.0  
12.0  
14.0  
16.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
Tj, Junction Temperature (°C)  
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFR3518/IRFU3518  
100000  
12  
10  
8
V
C
= 0V,  
f = 1 MHZ  
GS  
I = 18A  
D
= C + C , C SHORTED  
iss  
gs gd ds  
V
V
V
= 40V  
= 64V  
= 16V  
DS  
DS  
DS  
C
= C  
gd  
rss  
C
= C + C  
oss  
ds gd  
10000  
1000  
100  
C
iss  
6
C
oss  
4
2
C
rss  
0
10  
0
10  
20  
30  
40  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
Q
Total Gate Charge (nC)  
DS  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
100  
10  
1
°
T = 175  
C
J
100µsec  
1msec  
°
T = 25  
J
C
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
10msec  
V
= 0 V  
GS  
0.1  
0.1  
0.0  
0.5  
1.0  
1.5  
2.0  
1
10  
100  
1000  
V
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRFR3518/IRFU3518  
RD  
40  
30  
20  
10  
0
VDS  
LIMITED BY PACKAGE  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
, Case Temperature ( C)  
T
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.1  
t
1
SINGLE PULSE  
0.02  
0.01  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t
/ t  
1
2
2. Peak T  
= P  
x
Z
+ T  
J
DM  
thJC  
C
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFR3518/IRFU3518  
320  
240  
160  
80  
15V  
I
D
TOP  
7.3A  
13A  
18A  
BOTTOM  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
20V  
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
0
t
25  
50  
75  
100  
125  
°
( C)  
150  
175  
p
Starting Tj, Junction Temperature  
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
.2µF  
12V  
.3µF  
Q
Q
GD  
GS  
+
V
DS  
D.U.T.  
-
V
V
GS  
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13a. Basic Gate Charge Waveform  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRFR3518/IRFU3518  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFR3518/IRFU3518  
D-Pak (TO-252AA) Package Outline  
Dimensions are shown in millimeters (inches)  
2.38 (.094)  
2.19 (.086)  
6.73 (.265)  
6.35 (.250)  
1.14 (.045)  
0.89 (.035)  
- A -  
1.27 (.050)  
5.46 (.215)  
0.58 (.023)  
0.46 (.018)  
0.88 (.035)  
5.21 (.205)  
4
6.45 (.245)  
5.68 (.224)  
6.22 (.245)  
5.97 (.235)  
10.42 (.410)  
9.40 (.370)  
1.02 (.040)  
1.64 (.025)  
LEAD ASSIGNMENTS  
1 - GATE  
1
2
3
2 - DRAIN  
0.51 (.020)  
MIN.  
- B -  
3 - SOURCE  
4 - DRAIN  
1.52 (.060)  
1.15 (.045)  
0.89 (.035)  
0.64 (.025)  
3X  
0.58 (.023)  
0.46 (.018)  
1.14 (.045)  
0.76 (.030)  
2X  
0.25 (.010)  
M A M B  
NOTES:  
2.28 (.090)  
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
2 CONTROLLING DIMENSION : INCH.  
4.57 (.180)  
3 CONFORMS TO JEDEC OUTLINE TO-252AA.  
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,  
SOLDER DIP MAX. +0.16 (.006).  
D-Pak (TO-252AA) Part Marking Information  
8
www.irf.com  
IRFR3518/IRFU3518  
I-Pak (TO-251AA) Package Outline  
Dimensions are shown in millimeters (inches)  
6.73 (.265)  
6.35 (.250)  
2.38 (.094)  
2.19 (.086)  
- A -  
0.58 (.023)  
0.46 (.018)  
1.27 (.050)  
5.46 (.215)  
0.88 (.035)  
5.21 (.205)  
LEAD ASSIGNMENTS  
4
1 - GATE  
2 - DRAIN  
6.45 (.245)  
3 - SOURCE  
4 - DRAIN  
5.68 (.224)  
6.22 (.245)  
5.97 (.235)  
1.52 (.060)  
1.15 (.045)  
1
2
3
- B -  
NOTES:  
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
2 CONTROLLING DIMENSION : INCH.  
2.28 (.090)  
1.91 (.075)  
9.65 (.380)  
8.89 (.350)  
3 CONFORMS TO JEDEC OUTLINE TO-252AA.  
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,  
SOLDER DIP MAX. +0.16 (.006).  
1.14 (.045)  
0.76 (.030)  
1.14 (.045)  
0.89 (.035)  
3X  
0.89 (.035)  
0.64 (.025)  
3X  
0.25 (.010)  
M A M B  
0.58 (.023)  
0.46 (.018)  
2.28 (.090)  
2X  
I-Pak (TO-251AA) Part Marking Information  
www.irf.com  
9
IRFR3518/IRFU3518  
D-Pak (TO-252AA) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TR  
TRL  
TRR  
16.3 ( .641 )  
15.7 ( .619 )  
16.3 ( .641 )  
15.7 ( .619 )  
12.1 ( .476 )  
11.9 ( .469 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
FEED DIRECTION  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
13 INCH  
16 mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481.  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
‚ Starting TJ = 25°C, L = 0.99mH  
RG = 25Ω, IAS = 18A.  
ꢀ Coss eff. is a fixed capacitance that gives the same  
charging time as Coss while VDS is rising from 0 to 80% VDSS  
.
† When mounted on 1" square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer  
to application note #AN-994.  
ƒ ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS  
,
TJ ≤ 175°C.  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 09/02  
10  
www.irf.com  

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