IRFR3704PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET![IRFR3704PBF](http://pdffile.icpdf.com/pdf1/p00112/img/icpdf/IRFR3704PBF_609350_icpdf.jpg)
型号: | IRFR3704PBF |
厂家: | ![]() |
描述: | HEXFET Power MOSFET |
文件: | 总9页 (文件大小:218K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PD - 95034A
IRFR3704PbF
SMPS MOSFET
IRFU3704PbF
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
20V
RDS(on) max
ID
75A
9.5mΩ
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
Benefits
l Ultra-Low RDS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR3704
IRFU3704
Absolute Maximum Ratings
Max
Symbol
Parameter
Units
VDS
VGS
Drain-Source Voltage
20
V
Gate-Source Voltage
± 20
75
Continuous Drain Current, VGS @ 10V
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
63
@ T = 70°C
A
C
300
90
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@T = 25°C
C
D
W
@T = 70°C
62
D
A
Linear Derating Factor
0.58
W/°C
°C
TJ, T
Junction and Storage Temperature Range
-55 to +175
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ
Max
1.7
Units
Rθ
Rθ
Rθ
–––
–––
–––
JC
JA
JA
Junction-to-Ambient (PCB Mount) *
Junction-to-Ambient
50
°C/W
110
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through ꢀ are on page 9
www.irf.com
1
12/13/04
IRFR/U3704PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min Typ Max Units
20 ––– –––
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V
∆
∆
V(BR)DSS/ TJ
RDS(on)
VGS(th)
IDSS
IGSS
–––
–––
1.0
7.3
11
9.5
14
VGS = 10V, ID = 15A
GS = 4.5V, ID = 12A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
m
V
–––
–––
–––
–––
3.0
10
V
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
–––
–––
–––
–––
Drain-to-Source Leakage Current
µA
nA
100
200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min Typ Max Units
Conditions
VDS = 25V, ID = 57A
ID = 28.4A
gfs
Qg
42
–––
19
–––
–––
–––
–––
24
S
–––
–––
–––
–––
0.3
Qgs
Qgd
QOSS
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
8.1
6.4
16
nC
VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
–––
8.4
98
3.2
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 10V
ID = 28.4A
Ω
Turn-Off Delay Time
Fall Time
12
ns RG = 1.8
5.0
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1996 –––
––– 1085 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
pF
–––
155
–––
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Typ
–––
–––
Max
216
71
Units
mJ
Avalanche Current
A
Diode Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
I
I
Continuous Source Current
MOSFET symbol
S
–––
––– 75
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
V
SM
–––
–––
300
(Body Diode)
p-n junction diode.
T = 25°C, I = 35.5A, V = 0V
J S GS
V
t
–––
–––
–––
–––
–––
–––
0.88
0.82
38
1.3
–––
57
SD
Diode Forward Voltage
T = 125°C, I = 35.5A, V = 0V
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 35.5A, VR = 20V
J F
rr
di/dt = 100A/µs
ns T = 125°C, I = 35.5A, VR= 20V
Q
t
45
68
nC
rr
41
62
rr
J
F
di/dt = 100A/µs
Q
50
75
nC
rr
2
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IRFR/U3704PbF
1000
100
10
1000
100
10
VGS
10.0V
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
TOP
TOP
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1000
75A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 15V
DS
V
=10V
20µs PULSE WIDTH
GS
10
3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U3704PbF
3000
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
28.4A
GS
V
= 10V
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
2500
2000
1500
1000
500
C
= C + C
ds
oss
gd
C
iss
6
C
oss
4
2
C
rss
0
0
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1.7
0.1
0.2
1
0.1
0.5
0.8
1.1
1.4
2.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFR/U3704PbF
RD
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFR/U3704PbF
0.020
0.010
0.009
0.008
0.007
0.006
VGS = 4.5V
0.015
I
= 35.5A
D
0.010
VGS = 10V
0.005
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
50
100
150
200
250
300
I
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
600
+
V
DS
I
D.U.T.
-
D
V
G
TOP
11.6A
23.8A
V
GS
500
400
300
200
100
0
3mA
Charge
BOTTOM 28.4A
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveforms
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
175
I
20V
°
Starting T , Junction Temperature ( C)
0.01Ω
t
J
p
I
AS
Fig 15a&b. Unclamped Inductive Test Circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
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IRFR/U3704PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
34
AS SEMBLED ON WW 16, 1999
IN THE ASSEMBLYLINE "A"
12
LINE A
Note: "P" in as sembly line position
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WE E K 16
A = AS S E MB L Y S I T E CODE
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7
IRFR/U3704PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WITH AS S EMBLY
DATE CODE
YEAR 9 = 1999
WE E K 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB LY
LOT CODE
Note: "P" in assembly line
pos ition indi cates "Lead-F ree"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S LE AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE EK 19
A = AS S E MB LY S IT E CODE
8
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IRFR/U3704PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
ꢀ Rθ is measured at TJ approximately 90°C
Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
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