AUIRF7669L2TR [INFINEON]
Automotive DirectFET Power MOSFET; 汽车的DirectFET功率MOSFET
| 型号： | AUIRF7669L2TR |
| 厂家： | 
Infineon |
| 描述： | Automotive DirectFET Power MOSFET |
| 文件： | 总11页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97536
AUIRF7669L2TR
AUIRF7669L2TR1
Automotive DirectFET Power MOSFET
AUTOMOTIVE GRADE
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
V(BR)DSS
100V
RDS(on) typ.
3.5m
4.4m
Ω
Ω
max.
ID (Silicon Limited)
Qg
114A
• Low Parasitic Parameters
• Dual Sided Cooling
81nC
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Max.
Parameter
Units
100
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
DS
GS
± 20
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
114
I
I
I
@ T = 25°C
C
D
D
D
81
@ T = 100°C
C
A
19
@ TA = 25°C
ID @ TC = 25°C
375
460
I
DM
100
Power Dissipation
P
P
@TC = 25°C
@TA = 25°C
D
W
3.3
Power Dissipation
D
EAS
260
850
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
AS (tested)
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
260
T
T
T
Peak Soldering Temperature
P
-55 to + 175
°C
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
RθJA
–––
–––
1.2
RθJA
RθJCan
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
Linear Derating Factor
0.5
0.83
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/13/2010
AUIRF7669L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
3.0
–––
0.08
3.5
–––
–––
4.4
5.0
V
∆ ∆
V(BR)DSS/ TJ
V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
VGS = 10V, ID = 68A
mΩ
V
VDS = VGS, ID = 250µA
4.0
∆
∆
V
GS(th)/ TJ
Gate Threshold Voltage Coefficient
–––
90
-13
––– mV/°C
V
DS = 25V, ID = 68A
–––
1.5
–––
–––
20
S
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
Ω
µA
VDS = 100V, VGS = 0V
–––
–––
–––
–––
VDS = 100V, VGS = 0V, TJ = 125°C
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS = 20V
nA
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, VGS = 10V
Qg
Qgs1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
81
23
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 68A
Pre-Vth Gate-to-Source Charge
Qgs2
Qgd
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
6.8
nC See Fig. 11
34
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
17.2
40.8
46
Qsw
VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ID = 68A
Qoss
td(on)
Output Charge
Turn-On Delay Time
nC
ns
15
tr
Rise Time
30
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
27
14
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
GS = 0V
5660
1140
240
9250
660
1040
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
VGS = 0V, VDS = 0V to 80V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
MOSFET symbol
showing the
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
–––
–––
114
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
460
p-n junction diode.
IS = 68A, VGS = 0V
IF = 68A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
61
1.3
92
V
ns
nC
Qrr
140
210
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
2
www.irf.com
AUIRF7669L2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
DFET2
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H2
Human Body Model
ESD
AEC-Q101-001
Class C4
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF7669L2TR/TR1
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.8V
5.5V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.5V
6.0V
5.8V
5.5V
100
BOTTOM
BOTTOM
10
1
5.5V
5.5V
0.1
60µs PULSE WIDTH
≤
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
≤
0.01
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
12
4.0
I
= 68A
Vgs = 10V
D
10
8
3.8
3.6
3.4
3.2
T
= 125°C
J
6
4
T
= 25°C
J
2
0
5
10
15
20
0
50
100
150
200
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.5
I
= 68A
D
V
= 10V
GS
T = -40°C
J
T = 25°C
100
10
1
2.0
1.5
1.0
0.5
J
T
= 175°C
J
V
= 25V
DS
≤60µs PULSE WIDTH
0.1
3
4
5
6
7
8
9
10
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
4
www.irf.com
AUIRF7669L2TR/TR1
1000
100
10
6.0
5.0
4.0
3.0
2.0
1.0
V
= 0V
GS
T = -40°C
J
T = 25°C
J
T
= 175°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-75 -50 -25
0
25 50 75 100 125 150 175
V
, Source-to-Drain Voltage (V)
T , Temperature ( °C )
SD
J
Fig 7. Typical Threshold Voltage vs.
Fig 8. Typical Source-Drain Diode Forward Voltage
Junction Temperature
100000
250
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
T = 25°C
J
= C
rss
oss
gd
= C + C
200
150
100
50
ds
gd
10000
1000
100
C
iss
C
oss
T
= 175°C
= 10V
J
C
rss
V
DS
20µs PULSE WIDTH
0
0
25 50 75 100 125 150 175 200
1
10
100
V
, Drain-to-Source Voltage (V)
I ,Drain-to-Source Current (A)
D
DS
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
14.0
120
I = 68A
D
12.0
100
80
60
40
20
0
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100
120
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
T
, Case Temperature (°C)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
www.irf.com
5
AUIRF7669L2TR/TR1
10000
1200
1000
800
600
400
200
0
I
D
OPERATION IN THIS AREA
TOP
12A
19A
LIMITED BY R
(on)
DS
1000
100
10
BOTTOM 68A
100µsec
1msec
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
1000
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
0.036168
0.02
0.01
0.01
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
∆Τ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
www.irf.com
AUIRF7669L2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
300
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 68A
Single Pulse
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
I
D
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
t
av = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 17. Maximum Avalanche Energy vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 19b. Gate Charge Waveform
Fig 19a. Gate Charge Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
www.irf.com
7
AUIRF7669L2TR/TR1
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Automotive DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
www.irf.com
AUIRF7669L2TR/TR1
Automotive DirectFET Outline Dimension, L8 Outline (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.215
0.029
0.007
0.003
A
B
C
D
E
F
9.05 9.15 0.356
6.85 7.10 0.270
5.90 6.00 0.232
0.55 0.65 0.022
0.58 0.62 0.023
1.18 1.22 0.046
G
H
J
0.98 1.02
0.73 0.77
0.039
0.029
0.38 0.42 0.015
1.35 1.45 0.053
2.55 2.65 0.100
K
L
5.45
L1
M
P
R
5.35
0.211
0.68 0.74 0.027
0.09 0.17 0.003
0.02 0.08 0.001
Automotive DirectFET Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
www.irf.com
9
AUIRF7669L2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7669L2TR). For 1000 parts on 7"
reel, order AUIRF7669L2TR1
DIMENSIONS
METRIC
IMPERIAL
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
MAX
12.10
4.10
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
TR1 OPTION (QTY 1000)
IMPERIAL
METRIC
A
B
C
D
E
F
4.69
0.154
0.623
0.291
0.283
0.390
0.059
0.059
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
METRIC
CODE
MIN
12.992
0.795
0.504
0.059
3.900
N.C
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
MIN
MAX
N.C
MAX
N.C
16.30
7.60
7.000
0.795
0.331
0.059
2.460
N.C
A
B
C
D
E
F
330.00
20.20
12.80
1.50
177.80
20.20
12.98
1.50
N.C
N.C
N.C
7.40
0.520
N.C
13.20
N.C
13.50
2.50
N.C
10.10
N.C
G
H
99.00
N.C
62.48
N.C
3.940
0.880
0.720
0.760
100.00
22.40
18.40
19.40
0.063
1.60
N.C
G
H
0.650
0.630
N.C
16.40
15.90
N.C
N.C
0.630
16.00
N.C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Starting TJ = 25°C, L = 0.11mH, RG = 25Ω, IAS = 68A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
10
www.irf.com
AUIRF7669L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to
make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and condi-
tions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all
express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in
other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation
where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against
all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manu-
facture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifi-
cally designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifica-
tions. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s
risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are desig-
nated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge
and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
相关型号：
AUIRF7732S2TR
Power Field-Effect Transistor, 14A I(D), 40V, 0.00695ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
©2020 ICPDF网 联系我们和版权申明