AUIRF7734M2TR_技术文档

PD - 96413A

AUIRF7734M2TR

AUIRF7734M2TR1

AUTOMOTIVE GRADE

Automotive DirectFET^®Power MOSFET

V_(BR)DSS

R_DS(on)typ.

40V

•

Advanced Process Technology

Optimized for Automotive Motor Drive, DC-DC and

other Heavy Load Applications

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and

Reliability

3.8m

4.9m

Ω

max.

I_{D (Silicon Limited)}

Q_g

•

72A

48nC

S

•

Lead Free, RoHS Compliant and Halogen Free

Automotive Qualified *

D

S

G

DirectFET^®ISOMETRIC

M2

L4

Applicable DirectFET® Outline and Substrate Outline

SB

SC

M2

M4

L6

L8

Description

The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The

DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improve-

ment specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust

and reliable device for high current automotive applications.

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

40

± 20

72

51

17

288

46

2.5

56

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

V

DS

GS

V

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current

I

@ T = 25°C

C

@ T = 100°C

C

@ T_A= 25°C

D

A

DM

Power Dissipation

P

E_AS

@T_C= 25°C

@T_A= 25°C

D

W

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

mJ

E_AS(tested)

164

I_AR

E_AR

A

mJ

See Fig. 18a, 18b, 16, 17

Repetitive Avalanche Energy

270

-55 to + 175

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

T

P

°C

J

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

20

–––

1.0

Max.

60

–––

3.3

Units

°C/W

W/°C

R_θJA

R_θJCan

R_θJ-PCB

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.30

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

04/19/12

AUIRF7734M2TR/TR1

Static Characteristics @ T_J= 25°C (unless otherwise stated)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 43A

V_(BR)DSS

ΔV_(BR)DSS/ΔT_J

R_DS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

40

–––

V

–––

0.03

–––

2.0

3.8

3.0

4.9

4.0

Ω

m

V

V_GS(th)

V

_DS= V_GS, I_D= 100μA

ΔV_GS(th)/ΔT_J

Gate Threshold Voltage Coefficient

–––

74

-9.3

–––

1.0

––– mV/°C

_DS= 10V, I_D= 43A

–––

5

S

gfs

R_G

I_DSS

Forward Transconductance

Gate Resistance

Drain-to-Source Leakage Current

–––

Ω

μA

V

_DS= 40V, V_GS= 0V

–––

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

250

100

-100

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA

V

_GS= -20V

Dynamic Characteristics @ T_J= 25°C (unless otherwise stated)

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

Q_gs1

V

_DS= 20V

–––

48

6.9

4.1

16

72

V_GS= 10V

I_D= 43A

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

–––

Q_gs2

Q_gd

nC

Q_godr

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

21

Q_sw

20.1

21

V_DS= 16V, V_GS= 0V

V_DD= 20V, V_GS= 10V

I_D= 43A

Q_oss

t_d(on)

Output Charge

Turn-On Delay Time

Rise Time

nC

ns

13

t_r

49

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.8Ω

–––

42

–––

45

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V

_GS= 0V

2545

587

324

2174

525

806

–––

V_DS= 25V

pF

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

V_GS= 0V, V_DS= 32V, f=1.0MHz

V_GS= 0V, V_DS= 0V to 32V

Diode Characteristics @ T_J= 25°C (unless otherwise stated)

Conditions

MOSFET symbol

showing the

Parameter

Min.

Typ.

Max. Units

I_S

Continuous Source Current

(Body Diode)

D

–––

72

A

G

I_SM

integral reverse

Pulsed Source Current

(Body Diode)

–––

288

S

p-n junction diode.

I_S= 43A, V_GS= 0V

I_F= 43A, V_DD= 25V

di/dt = 100A/μs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

38

1.3

57

39

V

ns

nC

Q_rr

26

Mounted on minimum footprint full size

board with metalized back and with small

clip heatsink (still air)

Mounted to a PCB with small

clip heatsink (still air)

Surface mounted on 1 in. square Cu

(still air).

Notes through are on page 11

2

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AUIRF7734M2TR/TR1

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of

the higher Automotive level.

MEDIUM-CAN

MSL1, 260°C

400V)

Moisture Sensitivity Level

Class M3 (

+/−

AEC-Q101-002

Machine Model

Class H1B (

1000V)

+/−

AEC-Q101-001

N/A

Human Body Model

ESD

Charged Device

Model

AEC-Q101-005

Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

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3

AUIRF7734M2TR/TR1

1000

100

10

1000

VGS

15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

3.5V

VGS

15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

3.5V

TOP

100

10

BOTTOM

1

3.5V

60μs

0.1

0.01

3.5V

≤

PULSE WIDTH

60μs

PULSE WIDTH

≤

Tj = 175°C

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

12

7.0

6.0

5.0

4.0

3.0

2.0

I

= 43A

D

T

= 125°C

J

10

8

T

= 125°C

J

6

4

2

T

= 25°C

J

Vgs = 10V

150

T

= 25°C

J

4

6

8

10 12 14 16

18 20

0

50

100

200

I , Drain Current (A)

V

Gate -to -Source Voltage (V)

D

GS,

Fig 4. Typical On-Resistance vs. Drain Current

Fig 3. Typical On-Resistance vs. Gate Voltage

2.0

1000

I

= 43A

D

1.8

1.6

1.4

1.2

1.0

0.8

0.6

V

= 10V

GS

100

T

= -40°C

10

1

J

TJ = 25°C

TJ = 175°C

V

= 25V

DS

≤

60μs PULSE WIDTH

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

2

3

4

5

6

7

8

9

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

4

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AUIRF7734M2TR/TR1

1000

100

10

4.0

3.5

3.0

2.5

2.0

1.5

1.0

T

= -40°C

J

TJ = 25°C

TJ = 175°C

I

= 1.0A

D

ID = 1.0mA

ID = 250μA

ID = 100μA

1

V

= 0V

1.2

GS

0.1

0.2

0.4

V

0.6

0.8

1.0

-75 -50 -25

T

0

25 50 75 100 125 150 175

, Source-to-Drain Voltage (V)

, Temperature ( °C )

SD

J

Fig 7. Typical Threshold Voltage vs. Junction Temperature

Fig 8. Typical Source-Drain Diode Forward Voltage

100000

10000

1000

150

V

= 0V,

= C

f = 1 MHZ

GS

C

+ C , C

SHORTED

ds

iss

gs

gd

= C

T

= 25°C

rss

oss

gd

J

= C + C

ds

gd

100

50

0

C

iss

T

= 175°C

J

oss

C

rss

V

= 5V

DS

380μs PULSE WIDTH

100

1

10

100

0

20

40

60

80

100

120

V

, Drain-to-Source Voltage (V)

I

,Drain-to-Source Current (A)

DS

D

Fig 10. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Forward Transconductance vs. Drain Current

14

75

I

= 43A

D

V

= 32V

= 20V

DS

12

10

8

60

45

30

15

0

VDS= 8V

6

4

2

0

15

30

45

60

75

25

50

75

100

125

150

175

Q , Total Gate Charge (nC)

T

, Case Temperature (°C)

G

C

Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage

Fig 12. Maximum Drain Current vs. Case Temperature

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5

AUIRF7734M2TR/TR1

1000

250

200

150

100

50

OPERATION IN THIS AREA

LIMITED BY RDS(on)

I

D

TOP

8.8A

23A

100

10

1

100μsec

BOTTOM 43A

1msec

10msec

DC

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

0

0.10

1

10

100

25

50

75

100

125

150

175

V

, Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

DS

J

Fig 13. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy vs. Temperature

10

D = 0.50

1

0.20

0.10

0.02

Ri (°C/W) τi (sec)

R₁

R₂

R₃

R₄

0.1

0.01

0.05

1.38106

1.31203

0.10457

0.50139

0.007407

0.039921

0.000021

0.000741

τ

^Jτ_J

τ

^Cτ

¹τ₁

Ci= τi/Ri

τ

²τ₂

³τ₃

⁴τ₄

Notes:

SINGLE PULSE

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

Duty Cycle = Single Pulse

0.01

0.05

0.10

1

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 16. Typical Avalanche Current vs.Pulsewidth

6

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AUIRF7734M2TR/TR1

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 18a, 18b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed

60

50

40

30

20

10

0

TOP

BOTTOM 1.0% Duty Cycle

= 43A

Single Pulse

I

D

T_jmax(assumed as 25°C in Figure 16, 17).

t

_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

_thJC(D, t_av) = Transient thermal resistance, see figure 15)

25

50

75

100

125

150

175

Z

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 17. Maximum Avalanche Energy vs. Temperature

V

15V

(BR)DSS

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V_GS

20V

0.01

t

Ω

p

I

AS

Fig 18a. Unclamped Inductive Test Circuit

Fig 18b. Unclamped Inductive Waveforms

Id

Vds

L

Vgs

VCC

DUT

0

20K

1K

Vgs(th)

Fig 19a. Gate Charge Test Circuit

Qgs1

Qgs2

Qgodr

Qgd

R_D

V_DS

Fig 19b. Gate Charge Waveform

V_GS

D.U.T.

V

DS

R_G

+

-

90%

V_DD

10V

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

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7

AUIRF7734M2TR/TR1

DirectFET^®Board Footprint, M2 (Medium Size Can).

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations

G = GATE

D = DRAIN

S = SOURCE

D

S

G

8

www.irf.com

AUIRF7734M2TR/TR1

DirectFET^®Outline Dimension, M2 Outline (Medium Size Can,2-Source Pads).

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.250

0.199

0.156

0.018

0.024

0.032

N/A

A

B

C

D

E

F

G

H

I

6.25 6.35

4.80 5.05

3.85 3.95

0.35 0.45

0.58 0.62

0.78 0.82

0.246

0.189

0.152

0.014

0.023

0.031

N/A

J

0.38 0.42

1.10 1.20

2.30 2.40

0.68 0.74

0.09 0.17

0.02 0.08

0.015

0.043

0.090

0.027

0.003

0.001

0.017

0.047

0.094

0.029

0.007

0.003

K

L

M

P

R

DirectFET^®Part Marking

"AU" = GATE AND

AUTOMOTIVE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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9

AUIRF7734M2TR/TR1

DirectFET^®Tape & Reel Dimension (Showing component orientation).

F

D

LOADED TAPE FEED DIRECTION

B

A

H

G

H

E

G

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as AUIRF7734M2TR). For 1000 parts on 7"

reel, order AUIRF7734M2TR1

DIMENSIONS

METRIC

MIN

REEL DIMENSIONS

IMPERIAL

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

NOTE: CONTROLLING

DIMENSIONS IN MM

METRIC

MAX

IMPERIAL

METRIC

MIN MAX

IMPERIAL

CODE

MIN

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

CODE

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

MAX

N.C

A

B

C

D

E

F

0.311

0.154

0.469

0.215

0.201

0.256

0.059

7.90

3.90

11.90

5.45

5.10

6.50

1.50

A

B

C

D

E

F

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

177.77

19.06

13.5

1.5

N.C

13.2

N.C

18.4

14.4

15.4

N.C

0.75

0.53

0.059

2.31

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

G

H

0.488

0.469

0.47

12.4

11.9

1.60

0.063

Notes:

Starting T_J= 25°C, L = 0.06mH, R_G= 50Ω, I_AS= 43A,Vgs = 20V.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Used double sided cooling, mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET® Website.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

R is measured at T_Jof approximately 90°C.

θ

10

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AUIRF7734M2TR/TR1

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod-

ucts and services at any time and to discontinue any product or services without notice. Part numbers designated

with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product

discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale

supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance

with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary

to support this warranty. Except where mandated by government requirements, testing of all parameters of each

product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration

and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this informa-

tion with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered

documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that

product or service voids all express and any implied warranties for the associated IR product or service and is an

unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant

into the body, or in other applications intended to support or sustain life, or in any other application in which the failure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR

products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,

and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the

design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,

are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other

applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in

applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for

compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific

IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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11


型号：	AUIRF7734M2TR
厂家：	Infineon
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总11页 (文件大小：228K)
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AUIRF7734M2TR [INFINEON]

相关型号：

AUIRF7734M2TR_15

AUIRF7736M2TR

AUIRF7736M2TR1

AUIRF7737L2TR

AUIRF7738L2

AUIRF7738L2TR

AUIRF7738L2TR1

AUIRF7738L2TR_15

AUIRF7739L2

AUIRF7739L2TR

AUIRF7739L2TR1

AUIRF7739L2TR_10