AUIRF7732S2 [INFINEON]
DirectFET Power MOSFET;
| 型号： | AUIRF7732S2 |
| 厂家： | 
Infineon |
| 描述： | DirectFET Power MOSFET |
| 文件： | 总12页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRF7732S2TR/TR1
DirectFET® Power MOSFET
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
40V
5.5mΩ
6.95mΩ
55A
V(BR)DSS
RDS(on) typ.
max.
• Low Parasitic Parameters
ID (Silicon Limited)
Qg
• Dual Sided Cooling
30nC
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
S
D
D
G
S
DirectFET ISOMETRIC
SC
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-
aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than
an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding
the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive
power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and
performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV
platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional
features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Ordering Information
Base Part Number
Package Type
Standard Pack
Form
Tape and Reel
Complete part Number
Quantity
4800
1000
AUIRF7732S2
AUIRF7732S2
DirectFET2 Small -Can
DirectFET2 Small -Can
AUIRF7732S2TR
AUIRF7732S2TR1
Tape and Reel Option 1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
40
± 20
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
GS
55
39
14
220
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
I
I
I
I
@ T = 25°C
@ T = 100°C
C
@ TA = 25°C
D
D
A
DM
41
2.5
45
100
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
P
P
@TC = 25°C
@TA = 25°C
D
W
D
EAS
mJ
EAS (tested)
See Fig. 18a,18b,16,17
IAR
A
EAR
Repetitive Avalanche Energy
mJ
260
-55 to + 175
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
T
T
T
°C
HEXFET® is a registered trademark of International Rectifier.
1
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© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
0.03
5.5
–––
–––
6.95
4.0
V
Δ
Δ
V(BR)DSS/ TJ
–––
–––
2.0
RDS(on)
VGS(th)
Ω
m
VGS = 10V, ID = 33A
V
–––
-8.1
–––
0.7
VDS = VGS, ID = 50μA
Δ
Δ
VGS(th)/ TJ
Gate Threshold Voltage Coefficient
–––
52
–––
–––
–––
5
mV/°C
S
VDS = 10V, ID = 33A
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Ω
–––
–––
–––
–––
–––
–––
–––
–––
–––
μA VDS = 40V, VGS = 0V
250
100
-100
V
DS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
nA
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs1
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
5.1
2.8
9.7
12
45
VDS = 20V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 10V
Qgs2
Qgd
nC ID = 33A
See Fig.11
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Qsw
12.5
16
Qoss
td(on)
tr
nC VDS = 16V, VGS = 0V
DD = 20V, VGS = 4.5V
9.6
25
V
ns
ID = 33A
RG = 6.8
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
24
22
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
1700
405
200
1460
360
540
V
GS = 0V
DS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
GS = 0V, VDS = 32V, f=1.0MHz
V
C
oss eff.
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
showing the
IS
Continuous Source Current
(Body Diode)
D
–––
–––
55
A
G
integral reverse
ISM
Pulsed Source Current
(Body Diode)
–––
–––
220
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
33
1.3
50
33
V
ns
nC
IS = 33A, VGS = 0V
IF = 33A, VDD = 20V
di/dt = 100A/μs
Qrr
22
2
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© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
Thermal Resistance
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
3.7
Units
°C/W
W/°C
Rθ
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
JA
JA
JCan
J-PCB
–––
0.27
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
3
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© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
TOP
BOTTOM
BOTTOM
1
0.1
0.01
3.5V
3.5V
1
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
≤
Tj = 175°C
10 100
, Drain-to-Source Voltage (V)
1
0.1
10
100
1000
0.1
1
1000
V
, Drain-to-Source Voltage (V)
DS
V
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
14
12
10
8
18
Vgs = 10V
I
= 33A
D
16
14
12
T
= 125°C
J
T = 125°C
10
8
J
6
6
T = 25°C
J
4
T
= 25°C
J
4
2
2
0
0
4
5
6
7
8
9
10 11 12
0
20 40 60 80 100 120 140 160 180 200
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.0
I
= 33A
D
V
= 10V
GS
T
T
T
= -40°C
= 25°C
= 175°C
100
10
1
J
J
J
1.5
1.0
0.5
V
= 25V
DS
≤60μs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
www.irf.com © 2012 International Rectifier
4
May 08, 2012
AUIRF7732S2TR/TR1
1000
100
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = -40°C
TJ = 25°C
= 175°C
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
T
D
D
D
D
J
V
= 0V
1.2
GS
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.4
T , Temperature ( °C )
V
, Source-to-Drain Voltage (V)
J
SD
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
100
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
T
= 25°C
rss
oss
gd
= C + C
J
80
60
40
20
0
ds
gd
C
iss
C
T = 175°C
J
oss
C
rss
V
= 5.0V
DS
380μs PULSE WIDTH
0
20
40
60
80
100
1
10
100
I ,Drain-to-Source Current (A)
V
, Drain-to-Source Voltage (V)
D
DS
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
60
14.0
I = 33A
D
12.0
50
40
30
20
10
0
V
V
V
= 32V
= 20V
= 8.0V
DS
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40
T
, Case Temperature (°C)
Q , Total Gate Charge (nC)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com © 2012 International Rectifier
Fig 12. Maximum Drain Current vs. Case Temperature
5
May 08, 2012
AUIRF7732S2TR/TR1
200
160
120
80
1000
100
10
OPERATION IN THIS AREA
I
D
LIMITED BY R
(on)
DS
TOP
6.4A
17A
BOTTOM 33A
1msec
100μsec
DC
10msec
1
Tc = 25°C
40
Tj = 175°C
Single Pulse
0.1
0
0.1
1
10
100
25
50
75
100
125
150
175
V
, Drain-toSource Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
© 2012 International Rectifier
6
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May 08, 2012
AUIRF7732S2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
50
45
40
35
30
25
20
15
10
5
TOP
BOTTOM 1.0% Duty Cycle
= 33A
Single Pulse
I
D
Tjmax (assumed as 25°C in Figure 16, 17).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
thJC(D, tav) = Transient thermal resistance, see figure 15)
0
25
50
75
100
125
150
175
Z
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy vs. Temperature
V
15V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
Vgs
VCC
DUT
0
20K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
Qgs1
Qgs2
Qgodr
Qgd
RD
VDS
Fig 19b. Gate Charge Waveform
VGS
D.U.T.
V
DS
RG
+
-
90%
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
www.irf.com © 2012 International Rectifier
Fig 20b. Switching Time Waveforms
May 08, 2012
7
AUIRF7732S2TR/TR1
Automotive DirectFET® Board Footprint, SC (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
8
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© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
Automotive DirectFET® Outline Dimension, SC Outline (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.191
0.156
0.112
0.018
0.024
0.032
0.031
A
B
C
D
E
F
4.75 4.85
3.70 3.95
2.75 2.85
0.35 0.45
0.58 0.62
0.78 0.82
0.75 0.80
0.63 0.67
0.38 0.42
0.95 1.05
2.15 2.25
0.68 0.74
0.08 0.17
0.02 0.08
0.187
0.146
0.108
0.014
0.023
0.031
0.030
G
H
J
0.025 0.026
0.015
0.037
0.085
0.027
0.003
0.001
0.016
0.041
0.088
0.029
0.007
0.003
K
L
M
P
R
Dimensions are shown in
millimeters (inches)
Automotive DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
Automotive DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
F
D
B
A
H
G
E
G
H
DIMENSIONS
METRIC
MIN
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF7732S2TR). For 1000 parts on 7"
reel, order AUIRF7732S2TR1
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
A
B
C
D
E
F
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
G
H
0.520
N.C
12.8
N.C
0.063
1.60
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Starting TJ = 25°C, L = 0.083mH, RG = 50Ω, IAS = 33A,Vgs = 20V.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
10 www.irf.com
© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
SMALL-CAN
MSL1, 260°C
Class M2 (+/- 200V)†††
Moisture Sensitivity Level
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V)†††
AEC-Q101-001
Human Body Model
ESD
N/A
AEC-Q101-005
Yes
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
11 www.irf.com
© 2012 International Rectifier
May 08, 2012
AUIRF7732S2TR/TR1
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practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12 www.irf.com
© 2012 International Rectifier
May 08, 2012
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