X60008E-41_06 [INTERSIL]

Precision 4.096V FGA⑩ Voltage; 精密4.096V FGA ™电压
X60008E-41_06
型号: X60008E-41_06
厂家: Intersil    Intersil
描述:

Precision 4.096V FGA⑩ Voltage
精密4.096V FGA ™电压

文件: 总10页 (文件大小:312K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
X60008E-41  
®
Data Sheet  
June 27, 2006  
FN8144.1  
Precision 4.096V FGA™ Voltage  
Reference  
Features  
• Output Voltage: 4.096V  
The X60008-41 FGA™ voltage references are very high  
precision analog voltage references fabricated in Intersil’s  
proprietary Floating Gate Analog technology, which achieves  
superior levels of performance when compared to  
• Absolute Initial Accuracy: ±5.0mV  
• Ultra Low Power Supply Current: 500nA  
• Low Temperature Coefficient: 20ppm/°C  
• 10 mA Source & Sink Current Capability  
• 10 ppm/1000hrs Long Term Stability  
• Supply Voltage Range: 4.5V to 9.0V  
• 5kV ESD (Human Body Model)  
conventional band gap, buried zener, or X  
technologies.  
FET  
FGA™ voltage references feature very high initial accuracy,  
very low temperature coefficient, excellent long term stability,  
low noise and excellent line and load regulation, at the  
lowest power consumption currently available. These  
voltage references enable advanced applications for  
precision industrial and portable systems operating at  
significantly higher accuracy and lower power levels than  
can be achieved with conventional technologies.  
• Standard Package: SOIC-8  
Temp Range: -40°C to +85°C  
• Pb-free Plus Anneal Available (RoHS Compliant)  
Applications  
Ordering Information  
• High Resolution A/Ds and D/As  
• Precision Current Sources  
• Smart Sensors  
TEMP.  
RANGE  
(°C)  
PART  
NUMBER  
PART  
MARKING  
PKG.  
PACKAGE DWG. #  
X60008EIS8-41 X60008E  
I41  
-40 to 85 8 Ld SOIC MDP0027  
• Digital Meters  
X60008EIS8-  
41T1  
X60008E  
I41  
-40 to 85 8 Ld SOIC MDP0027  
• Precision Regulators  
• Strain Gage Bridges  
• Calibration Systems  
• Precision Oscillators  
• Threshold Detectors  
• V-F Converters  
Tape and  
Reel  
X60008EIS8Z-41 X60008E -40 to 85 8 Ld SOIC MDP0027  
(Note) ZI41 (Pb-free)  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free  
material sets; molding compounds/die attach materials and 100%  
matte tin plate termination finish, which are RoHS compliant and  
compatible with both SnPb and Pb-free soldering operations. Intersil  
Pb-free products are MSL classified at Pb-free peak reflow  
temperatures that meet or exceed the Pb-free requirements of  
IPC/JEDEC J STD-020.  
• Battery Management Systems  
• Servo Systems  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2006. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  
X60008E-41  
ABSOLUTE MAXIMUM RATINGS  
COMMENT  
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +125°C  
Absolute Maximum Ratings are limits which may result in  
impaired reliability and/or permanent damage to the device.  
These are stress ratings provided for informa-tion only and  
functional operation of the device at these or any other  
conditions beyond those indicated in the operational sections  
of this specification are not implied.  
Max Voltage Applied V to Gnd . . . . . . . . . . . . . . . . -0.5V to +9.0V  
IN  
Max Voltage Applied  
V
to Gnd (*) . . . . . . . . . . . . . . . . . . . . . . . . . . .- 0.5V to +5.1V  
OUT  
Voltage on “DNC” pins . . . . No connections permitted to these pins.  
Lead Temperature, soldering (*) . . . . . . . . . . . . . . . . . . . . . +225°C  
(*) note: maximum duration = 10 seconds  
For guaranteed specifications and test conditions, see  
Electrical Specifications.  
RECOMMENDED OPERATING CONDITIONS  
TEMPERATURE  
MIN  
MAX  
The guaranteed specifications apply only for the test  
conditions listed. Some performance characteristics may  
degrade when the device is not operated under the listed  
test conditions.  
Industrial  
-40°C  
+85°C  
Typical Application  
V
= +5.0V  
IN  
0.1µF  
10µF  
V
IN  
V
OUT  
( )  
0.001µF *  
X60008-41  
GND  
REF IN  
Enable  
SCK  
SDAT  
Serial  
Bus  
16 to 24-bit  
A/D Converter  
* Also see Figure 3 in “Applications Information” on page 7.  
Package Diagram  
Pin Configurations  
PIN NAME  
DESCRIPTION  
Ground Connection  
X60008-XX  
SOIC  
GND  
V
Power Supply Input Connection  
IN  
8
7
6
1
2
3
GND  
DNC  
DNC  
V
Voltage Reference Output Connection  
OUT  
V
IN  
DNC  
Do Not Connect; Internal Connection – Must Be  
Left Floating  
DNC  
GND  
V
OUT  
5
4
DNC  
FN8144.1  
June 27, 2006  
2
X60008E-41  
Electrical Specifications Operating Conditions: V = 5.0V, I  
= 0mA, C = 0.001µF, T = -40 to +85°C, unless otherwise  
OUT A  
IN  
OUT  
specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
-5.0  
4.5  
TYP  
MAX  
UNITS  
V
V
V
Output Voltage  
Accuracy X60008E-41  
4.096  
OUT  
V
T = 25°C  
A
+5.0  
900  
9.0  
mV  
OA  
OUT  
I
Supply Current  
500  
nA  
IN  
V
Input Voltage Range  
V
IN  
TC V  
Output Voltage  
Temperature Coefficient  
X60008E-41  
20  
ppm/°C  
OUT  
/ΔV  
(1)  
ΔV  
ΔV  
Line Regulation  
Load Regulation  
+4.5V V +8.0V  
IN  
150  
µV/V  
OUT  
IN  
/ΔI  
OUT OUT  
0mA I  
10mA  
10  
20  
50  
100  
µV/mA  
SOURCE  
-10mA I 0mA  
SINK  
T = 25°C  
ΔV  
ΔV  
/Δt  
Long Term Stability  
10  
100  
50  
ppm/1000Hrs  
ppm  
OUT  
OUT  
A
(2)  
/ΔT  
Thermal Hysteresis  
ΔT = -40°C to +85°C  
= 25°C  
A
(3)  
I
Short Circuit Current  
T
80  
mA  
SC  
A
V
Output Voltage Noise  
0.1Hz to 10Hz  
30  
µV  
pp  
N
NOTE:  
1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in V  
temperature range; in this case, -40°C to +85°C = 125°C.  
is divided by the  
OUT  
2. Thermal Hysteresis is the change in V  
created by package stress @ T = 25°C after temperature cycling. V  
A OUT  
is read initially at T = 25°C;  
OUT  
the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second V  
A
measurement is taken at 25°C. The deviation between  
OUT  
the initial V  
reading and the second V reading is then expressed in ppm.  
OUT  
OUT  
3. Guaranteed by Device Characterization  
FN8144.1  
June 27, 2006  
3
X60008E-41  
Typical Performance Curves (V = 5.0V, I  
= 0mA, T = 25°C, unless otherwise specified)  
IN  
OUT  
A
LINE REGULATION  
(3 Representative Units)  
LINE REGULATION  
300  
4.0963  
4.09625  
4.0962  
4.09615  
4.0961  
4.09605  
4.096  
Unit 2,  
= 520nA  
-40°C  
+85°C  
I
IN  
250  
+25°C  
Unit 3,  
= 700nA  
I
IN  
200  
150  
100  
50  
Unit 1,  
= 360nA  
I
IN  
0
-50  
4.09595  
-100  
4.5  
4.0959  
5
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
4.5  
5.5  
6.5  
7.5  
8.5  
V
(V)  
IN  
V
(V)  
IN  
0.1Hz to 10Hz V  
Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz  
NOISE  
OUT  
LOAD REGULATION  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
-0.1  
+25°C  
+85°C  
-40°C  
-20  
-15  
SINKING  
-10  
-5  
0
5
10  
15  
SOURCING  
20  
1 Sec/div  
OUTPUT CURRENT (mA)  
FN8144.1  
June 27, 2006  
4
X60008E-41  
Typical Performance Curves (V = 5.0V, I  
= 0mA, T = 25°C, unless otherwise specified) (Continued)  
IN  
OUT  
A
50μA LOAD TRANSIENT RESPONSE  
10mA LOAD TRANSIENT RESPONSE  
2mS/DIV  
500μSEC/DIV  
LINE TRANSIENT RESPONSE  
LINE TRANSIENT RESPONSE  
500μSEC/DIV  
500μSEC/DIV  
FN8144.1  
June 27, 2006  
5
X60008E-41  
Typical Performance Curves (V = 5.0V, I  
= 0mA, T = 25°C, unless otherwise specified) (Continued)  
IN  
OUT  
A
PSRR vs CAP Load  
0
V
vs TEMPERATURE  
OUT  
Normalized to 25°C  
(3 Representative Units)  
No Load  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
4.0996  
4.0984  
4.0972  
4.096  
1nF Load  
Unit 3,  
= 700nA  
Unit 2, I = 520nA  
IN  
10nF Load  
I
IN  
Unit 1, I = 360nA  
IN  
4.0948  
4.0936  
4.0924  
4.0912  
4.09  
100nF Load  
1
01  
100  
1000  
10000  
100000  
1000000  
-40  
-15  
10  
35  
60  
85  
TEMPERATURE (°C)  
FREQUENCY (Hz)  
Z
vs FREQUENCY  
OUT  
I
vs V  
IN  
IN  
350  
800  
300  
250  
200  
150  
100  
50  
-40°C  
700  
600  
500  
400  
300  
200  
100  
0
no Load  
1nF Load  
25°C  
85°C  
10nF Load  
100nF Load  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
1
10  
100  
1000  
10000  
100000  
V
(V)  
IN  
FREQUENCY (Hz)  
I
vs V  
IN  
IN  
(3 Representative Units)  
TURN-ON TIME  
6
5
4
3
2
1
0
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
IN  
Unit 3  
V
OUT  
Unit 2  
Unit 1  
-1  
1
3
5
7
9
11  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.  
5
9
TIME (mSec)  
V
IN  
(V)  
FN8144.1  
June 27, 2006  
6
X60008E-41  
FIGURE 1.  
10µF  
Applications Information  
V
= 4.5 - 9V  
IN  
FGA Technology  
0.01µF  
The X60008 series of voltage references use the floating  
V
gate technology to create references with very low drift and  
supply current. Essentially the charge stored on a floating  
gate cell is set precisely in manufacturing. The reference  
voltage output itself is a buffered version of the floating gate  
voltage. The resulting reference device has excellent  
characteristics which are unique in the industry: very low  
temperature drift, high initial accuracy, and almost zero  
supply current. Also, the reference voltage itself is not limited  
by voltage bandgaps or zener settings, so a wide range of  
reference voltages can be programmed (standard voltage  
settings are provided, but customer-specific voltages are  
available).  
IN  
V
OUT  
X60008-41  
GND  
0.001µF  
REF IN  
Enable  
SCK  
SDAT  
Serial  
Bus  
12 to 24-bit  
A/D Converter  
Board mounting Considerations  
The process used for these reference devices is a floating  
gate CMOS process, and the amplifier circuitry uses CMOS  
transistors for amplifier and output transistor circuitry. While  
providing excellent accuracy, there are limitations in output  
noise level and load regulation due to the MOS device  
characteristics. These limitations are addressed with circuit  
techniques discussed in other sections.  
For applications requiring the highest accuracy, board  
mounting location should be reviewed. Placing the device in  
areas subject to slight twisting can cause degradation of the  
accuracy of the reference voltage due to die stresses. It is  
normally best to place the device near the edge of a board,  
or the shortest side, as the axis of bending is most limited at  
that location. Obviously mounting the device on flexprint or  
extremely thin PC material will likewise cause loss of  
reference accuracy.  
Nanopower Operation  
Reference devices achieve their highest accuracy when  
powered up continuously, and after initial stabilization has  
taken place. This drift can be eliminated by leaving the  
power-on continuously.  
Noise Performance and Reduction:  
The output noise voltage in a 0.1Hz to 10Hz bandwidth is  
typically 30µVp-p. This is shown in the plot in the Typical  
Performance Curves. The noise measurement is made with  
a bandpass filter made of a 1 pole high-pass filter with a  
corner frequency at .1Hz and a 2-pole low-pass filter with a  
corner frequency at 12.6Hz to create a filter with a 9.9Hz  
bandwidth. Noise in the 10KHz to 1MHz bandwidth is  
approximately 400µVp-p with no capacitance on the output,  
as shown in Figure 2. These noise measurements are made  
with a 2 decade bandpass filter made of a 1 pole high-pass  
filter with a corner frequency at 1/10 of the center frequency  
and 1-pole low-pass filter with a corner frequency at 10 times  
the center frequency. Figure 2 also shows the noise in the  
10KHz to 1MHz band can be reduced to about 50µVp-p  
using a .001µF capacitor on the output. Noise in the 1KHz to  
100KHz band can be further reduced using a 0.1µF  
capacitor on the output, but noise in the 1Hz to 100Hz band  
increases due to instability of the very low power amplifier  
with a 0.1µF capacitance load. For load capacitances above  
.001µF the noise reduction network shown in Figure 3 is  
recommended. This network reduces noise sig-nificantly  
over the full bandwidth. As shown in Figure 2, noise is  
reduced to less than 40µVp-p from 1Hz to 1MHz using this  
network with a .01µF capacitor and a 2kΩ resistor in series  
with a 10µF capacitor.  
The X60008 is the first high precision voltage reference with  
ultra low power consumption that makes it practical to leave  
power-on continuously in battery operated circuits. The  
X60008 consumes extremely low supply current due to the  
proprietary FGA technology. Supply current at room  
temperature is typically 500nA which is 1 to 2 orders of  
magnitude lower than competitive devices. Application circuits  
using battery power will benefit greatly from having an  
accurate, stable reference which essentially presents no load  
to the battery.  
In particular, battery powered data converter circuits that  
would normally require the entire circuit to be disabled when  
not in use can remain powered up between conversions as  
shown in Figure 1. Data acquisition circuits providing 12 to  
24 bits of accuracy can operate with the reference device  
continuously biased with no power penalty, providing the  
highest accuracy and lowest possible long term drift.  
Other reference devices consuming higher supply currents  
will need to be disabled in between conversions to conserve  
battery capacity. Absolute accuracy will suffer as the device  
is biased and requires time to settle to its final value, or, may  
not actually settle to a final value as power-on time may be  
short.  
FN8144.1  
June 27, 2006  
7
X60008E-41  
FIGURE 2.  
FIGURE 4.  
X60008 TURN-ON TIME (25°C)  
X60008-41 NOISE REDUCTION  
(3 Representative Units)  
400  
350  
300  
250  
200  
150  
100  
6
5
4
3
2
1
0
CL = 0  
V
CL = .001µF  
IN  
CL = .1µF  
I
= 700nA  
CL = .01µF & 10µF + 2kΩ  
IN  
I
= 520nA  
IN  
I
IN  
= 360nA  
50  
0
-1  
1
3
5
7
9
11  
1
10  
100  
1000  
10000  
100000  
TIME (mSec)  
FIGURE 3.  
Temperature Coefficient  
V
= 5.0V  
.1µF  
IN  
The limits stated for temperature coefficient (tempco) are  
governed by the method of measurement. The  
overwhelming standard for specifying the temperature drift of  
a reference is to measure the reference voltage at two  
V
10µF  
IN  
V
O
X60008-41  
GND  
2kΩ  
temperatures, take the total variation, (V  
- V ), and  
LOW  
HIGH  
divide by the temperature extremes of measurement  
.01µF  
10µF  
(T  
- T  
). The result is divided by the nominal  
6
HIGH  
LOW  
reference voltage (at T = 25°C) and multiplied by 10 to yield  
ppm/°C. This is the “Box” method for determining  
temperature coefficient.  
Turn-On Time  
The X60008 devices have ultra-low supply current and thus  
the time to bias up internal circuitry to final values will be  
longer than with higher power references. Normal turn-on  
time is typically 7ms. This is shown in the graph, Figure 4.  
Since devices can vary in supply current down to 300nA,  
turn-on time can last up to about 12ms. Care should be  
taken in system design to include this delay before  
measurements or conversions are started.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN8144.1  
June 27, 2006  
8
X60008E-41  
Typical Application Circuits  
Precision 4.096V, 50mA Reference.  
V
= 5.2V to 9V  
IN  
R = 200Ω  
2N2905  
V
IN  
X60008-41  
V
4.096V/50mA  
0.001µF  
OUT  
GND  
Kelvin Sensed Load  
4.5V to 9V  
0.1µF  
V
IN  
V
OUT  
+
V
Sense  
OUT  
X60008-41  
GND  
Load  
4.096V Full Scale Low-Drift 10-bit Adjustable Voltage Source  
4.5V to 9V  
0.1µF  
V
IN  
V
OUT  
X60008-41  
GND  
0.001µF  
V
R
CC  
V
H
OUT  
X9119  
SDA  
SCL  
+
2-Wire Bus  
V
OUT  
(buffered)  
V
R
L
SS  
FN8144.1  
June 27, 2006  
9
X60008E-41  
Small Outline Package Family (SO)  
A
D
h X 45°  
(N/2)+1  
N
A
PIN #1  
I.D. MARK  
E1  
E
c
SEE DETAIL “X”  
1
(N/2)  
B
L1  
0.010 M  
C A B  
e
H
C
A2  
A1  
GAUGE  
PLANE  
SEATING  
PLANE  
0.010  
L
4° ±4°  
0.004 C  
b
0.010 M  
C
A
B
DETAIL X  
MDP0027  
SMALL OUTLINE PACKAGE FAMILY (SO)  
SO16  
SO16 (0.300”)  
(SOL-16)  
SO20  
SO24  
(SOL-24)  
SO28  
(SOL-28)  
SYMBOL  
SO-8  
0.068  
0.006  
0.057  
0.017  
0.009  
0.193  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
8
SO-14  
0.068  
0.006  
0.057  
0.017  
0.009  
0.341  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
14  
(0.150”)  
0.068  
0.006  
0.057  
0.017  
0.009  
0.390  
0.236  
0.154  
0.050  
0.025  
0.041  
0.013  
16  
(SOL-20)  
0.104  
0.007  
0.092  
0.017  
0.011  
0.504  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
20  
TOLERANCE  
MAX  
NOTES  
A
A1  
A2  
b
0.104  
0.007  
0.092  
0.017  
0.011  
0.406  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
16  
0.104  
0.007  
0.092  
0.017  
0.011  
0.606  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
24  
0.104  
0.007  
0.092  
0.017  
0.011  
0.704  
0.406  
0.295  
0.050  
0.030  
0.056  
0.020  
28  
-
±0.003  
±0.002  
±0.003  
±0.001  
±0.004  
±0.008  
±0.004  
Basic  
-
-
-
c
-
D
1, 3  
E
-
E1  
e
2, 3  
-
L
±0.009  
Basic  
-
L1  
h
-
Reference  
Reference  
-
N
-
Rev. L 2/01  
NOTES:  
1. Plastic or metal protrusions of 0.006” maximum per side are not included.  
2. Plastic interlead protrusions of 0.010” maximum per side are not included.  
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.  
4. Dimensioning and tolerancing per ASME Y14.5M-1994  
FN8144.1  
June 27, 2006  
10  

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1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5V, PDSO8, PLASTIC, SOIC-8
RENESAS

X60008EIS8Z-41

Precision 4.096V FGA⑩ Voltage
INTERSIL

X60008XIS8-41

Precison 4.096V FGA Voltage Reference
INTERSIL

X60250

Micro Power Programmable Voltage Reference
INTERSIL

X60250V8I

Micro Power Programmable Voltage Reference
INTERSIL

X60250V8IZ

Micro Power Programmable Voltage Reference
INTERSIL

X6612TX4

10/100 BASE MAGNETIC MODULE
XFMRS