X60008E-50 [INTERSIL]

Precision 5.0V FGA Voltage Reference; 精密5.0V FGA基准电压源
X60008E-50
型号: X60008E-50
厂家: Intersil    Intersil
描述:

Precision 5.0V FGA Voltage Reference
精密5.0V FGA基准电压源

文件: 总14页 (文件大小:293K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
X60008E-50  
®
Data Sheet  
March 14, 2005  
FN8145.0  
DESCRIPTION  
Precision 5.0V FGA™ Voltage Reference  
The X60008-50 FGA™ voltage references are very  
high precision analog voltage references fabricated in  
Intersil’s proprietary Floating Gate Analog technology,  
which achieves superior levels of performance when  
compared to conventional band gap, buried zener, or  
FEATURES  
• Output Voltage: 5.000V  
• Absolute Initial Accuracy = ±5mV  
• Ultra Low Power Supply Current: 500nA  
• Low Temperature Coefficient = 20ppm/°C max  
• 10 mA Source & Sink Current Capability  
• 10 ppm/1000hrs Long Term Stability  
• Very Low Dropout Voltage: 100 mV @ no load  
• Supply Voltage Range: 5.1V to 9.0V  
• 5kV ESD (Human Body Model)  
X
™ technologies.  
FET  
FGA™ voltage references feature very high initial  
accuracy, very low temperature coefficient, excellent  
long term stability, low noise and excellent line and  
load regulation, at the lowest power consumption  
currently available. These voltage references enable  
advanced applications for precision industrial &  
portable systems operating at significantly higher  
accuracy and lower power levels than can be achieved  
with conventional technologies.  
• Standard Package: SOIC-8  
• Temp Range: -40°C to +85°C  
APPLICATIONS  
• High Resolution A/Ds & D/As  
• Digital Meters  
• Precision Current Sources  
• Precision Regulators  
• Smart sensors  
• Strain Gage Bridges  
• Threshold Detectors  
• Servo Systems  
• Calibration Systems  
• V-F Converters  
• Precision Oscillators  
• Battery Management Systems  
TYPICAL APPLICATION  
VIN = +6.5V  
0.1µF  
10µF  
VIN  
VOUT  
0.001µF(*)  
X60008-50  
GND  
REF IN  
Enable  
SCK  
SDAT  
Serial  
Bus  
16 to 24-bit  
A/D Converter  
(*)Also see Figure 3 in Applications Information  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
X60008E-50  
PACKAGE DIAGRAM  
X60008-XX  
SOIC  
8
7
6
1
2
3
GND  
VIN  
DNC  
DNC  
VOUT  
DNC  
DNC  
GND  
5
4
PIN CONFIGURATIONS  
Pin Name  
Description  
GND  
VIN  
Ground Connection  
Power Supply Input Connection  
Voltage Reference Output Connection  
Do Not Connect; Internal Connection – Must Be Left Floating  
VOUT  
DNC  
ORDERING INFORMATION  
X 60008 E I S8 – 50  
Logo  
Device Part Number  
Grade  
60008 = Standard  
E = ±5.0mV, 20 ppm/°C  
I = -40°C to +85°C  
S8 = 8 lead SOIC  
50 = 5.000V  
Temperature Range  
Package  
VOUT Option  
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X60008E-50  
ABSOLUTE MAXIMUM RATINGS  
COMMENT  
Storage Temperature Range............ -65°C to + 125°C  
Voltage on any Pin  
Referenced to Gnd.............................-0.5V to + 10V  
Voltage on “DNC” pins.........No connections permitted  
to these pins.  
Absolute Maximum Ratings indicate limits beyond  
which permanent damage to the device and impaired  
reliability may occur. These are stress ratings provided  
for information only and functional operation of the  
device at these or any other conditions beyond those  
indicated in the operational sections of this specifica-  
tion are not implied.  
Lead Temperature (soldering, 10 secs).......... + 225°C  
RECOMMENDED OPERATING CONDITIONS  
For guaranteed specifications and test conditions, see  
Electrical Characteristics.  
Temperature  
Min.  
Max.  
Industrial  
-40°C  
+85°C  
The guaranteed specifications apply only for the test  
conditions listed. Some performance characteristics  
may degrade when the device is not operated under  
the listed test conditions.  
ELECTRICAL CHARACTERISTICS  
(Operating Conditions: V = 6.5V, I  
= 0mA, C  
= 0.001µF, T = -40 to +85°C unless otherwise specified.)  
A
IN  
OUT  
OUT  
Symbol  
VOUT  
Parameter  
Output Voltage  
Conditions  
Min  
Typ  
Max  
Units  
V
5.000  
VOA  
VOUT Accuracy  
X60008EIS8-50  
TA = 25°C  
mV  
-5.0  
5.1  
+5.0  
800  
9.0  
IIN  
Supply Current  
500  
10  
nA  
V
VIN  
Input Voltage Range  
TC VOUT  
Output Voltage  
X60008EIS8-50  
20  
ppm/°C  
Temperature Coefficient(1)  
VOUT/VIN  
VOUT/IOUT  
Line Regulation  
Load Regulation  
+5.5V VIN +8.0V  
150  
µV/V  
µV/mA  
0mA ISOURCE 10mA  
-10mA ISINK 0mA  
15  
25  
50  
100  
VOUT/t  
Long Term Stability  
TA = 25°C  
10  
ppm/  
1000Hrs  
VOUT/TA  
VDO  
Thermal Hysteresis(2)  
Dropout Voltage(3)  
Short Circuit Current(4)  
T = -40°C to +85°C  
IOUT = 5mA, VOUT = 0.01%  
TA = 25°C  
50  
150  
50  
ppm  
mV  
300  
80  
ISC  
mA  
VN  
Output Voltage Noise  
0.1Hz to 10Hz  
30  
µVpp  
Note: 1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided  
by the temperature range; in this case, -40°C to +85°C = 125°C.  
2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at TA  
= 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The  
deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm.  
3. Dropout voltage (VDO) is the minimum voltage (VIN) into the X60008 which will produce the output voltage (VOUT) drop specified in the  
Electrical Characteristics table.  
4. Guaranteed by Device Characterization  
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TYPICAL PERFORMANCE CHARACTERISTIC CURVES  
(V = 6.5V, I  
= 0mA, T = 25°C unless otherwise specified)  
IN  
OUT  
A
LINE REGULATION  
LINE REGULATION  
350  
300  
250  
200  
150  
100  
50  
5.0004  
5 Typical Units  
5.0003  
5.0002  
5.0001  
5.0000  
-40°C  
25°C  
85°C  
4.9999  
4.9998  
4.9997  
0
-50  
5
6
7
8
9
5
6
7
8
9
Vin (V)  
Vin (V)  
LOAD REGULATION  
0.6  
0.5  
-40°C  
0.4  
0.3  
0.2  
0.1  
0
25°C  
85°C  
-0.1  
-0.2  
-0.3  
-20 -15 -10  
-5  
0
5
10  
15  
20  
SINKING  
SOURCING  
OUTPUT CURRENT (mA)  
0.1Hz to 10Hz VOUT NOISE  
Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz  
10 Sec/div  
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X60008E-50  
TYPICAL PERFORMANCE CHARACTERISTIC CURVES  
(V = 6.5V, I  
= 0mA, T = 25°C unless otherwise specified)  
IN  
OUT  
A
VOUT vs TEMPERATURE  
PSRR vs CAP LOAD  
Normalized to 25°C  
0
-10  
-20  
5.0020  
4 Typical Units  
C =0  
L
5.0015  
5.0010  
C =.001µF  
L
-30  
-40  
5.0005  
5.0000  
C =.01µF  
L
-50  
-60  
-70  
-80  
4.9995  
4.9990  
4.9985  
4.9980  
C =.1µF  
L
-40C  
-15C  
10C  
+35C +60C +85C  
1 Hz 10 Hz 100Hz 1kHz 10kHz 100kHz 1 MHz  
FREQUENCY (Hz)  
TEMPERATURE (C)  
10mA LOAD TRANSIENT RESPONSE  
10mA LOAD TRANSIENT RESPONSE  
CL = .01µF  
CL = .001µF  
IIN = -10mA  
IIN = -10mA  
IIN = +10mA  
IIN = +10mA  
500µSEC/DIV  
500µSEC/DIV  
10mA LOAD TRANSIENT RESPONSE  
CL = .1µF  
IIN = -10mA  
IIN = +10mA  
500µSEC/DIV  
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TYPICAL PERFORMANCE CHARACTERISTIC CURVES  
(V = 6.5V, I = 0mA, T = 25°C unless otherwise specified)  
IN  
OUT  
A
50µA LOAD TRANSIENT RESPONSE  
50µA LOAD TRANSIENT RESPONSE  
CL = .001µF  
CL = .01µF  
IIN = -50µA  
IIN = -50µA  
IIN = +50µA  
IIN = +50µA  
100µSEC/DIV  
200µSEC/DIV  
50µA LOAD TRANSIENT RESPONSE  
CL = .1µF  
IIN = -50µA  
IIN = +50µA  
1mSEC/DIV  
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X60008E-50  
TYPICAL PERFORMANCE CHARACTERISTIC CURVES  
(V = 6.5V, I = 0mA, T = 25°C unless otherwise specified)  
IN  
OUT  
A
LINE TRANSIENT RESPONSE  
LINE TRANSIENT RESPONSE  
CL = 0  
CL = .001µF  
VIN = -500mV  
VIN = +500mV  
VIN = -500mV  
VIN = +500mV  
500µSEC/DIV  
500µSEC/DIV  
LINE TRANSIENT RESPONSE  
LINE TRANSIENT RESPONSE  
CL = .1µF  
CL = .01µF  
VIN = -500mV  
VIN = +500mV  
VIN = -500mV  
VIN = +500mV  
500µSEC/DIV  
500µSEC/DIV  
MINIMUM VIN to VOUT DIFFERENTIAL  
vs. OUTPUT CURRENT  
Zout vs FREQUENCY  
0.50  
500.0  
400.0  
0.45  
0.40  
0.35  
0.30  
+85C  
C =.001µF  
L
C =.01µF  
L
+25C  
300.0  
200.0  
100.0  
0.25  
0.20  
0.15  
0.10  
0.05  
0
-40C  
C =.1µF  
L
0.01  
10  
100  
1K  
10K  
100K  
0
-2  
-4  
-6  
-8  
-10  
FREQUENCY (Hz)  
OUTPUT CURRENT (mA)  
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X60008E-50  
TYPICAL PERFORMANCE CHARACTERISTIC CURVES  
(V = 6.5V, I  
= 0mA, T = 25°C unless otherwise specified)  
IN  
OUT  
A
IIN vs VIN  
IIN vs VIN  
900  
700  
-40°C  
+25°C  
800  
700  
600  
500  
400  
300  
600  
500  
+85°C  
400  
300  
200  
5 units representative of I range  
IN  
200  
100  
0
100  
0
5.5  
6
6.5  
7
7.5  
8
8.5  
9
5.5  
6
6.5  
7
7.5  
8
8.5  
9
VIN (V)  
VIN (V)  
TURN-ON TIME  
7
V
IN  
6
5
4
V
OUT  
3
2
1
0
0
2
4
6
8
10  
TIME (mSec)  
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8
X60008E-50  
APPLICATIONS INFORMATION  
FGA Technology  
Other reference devices consuming higher supply cur-  
rents will need to be disabled in between conversions  
to conserve battery capacity. Absolute accuracy will  
suffer as the device is biased and requires time to set-  
tle to its final value, or, may not actually settle to a final  
value as power-on time may be short.  
The X60008 series of voltage references use the float-  
ing gate technology to create references with very low  
drift and supply current. Essentially the charge stored  
on a floating gate cell is set precisely in manufacturing.  
The reference voltage output itself is a buffered ver-  
sion of the floating gate voltage. The resulting refer-  
ence device has excellent characteristics which are  
unique in the industry: very low temperature drift, high  
initial accuracy, and almost zero supply current. Also,  
the reference voltage itself is not limited by voltage  
bandgaps or zener settings, so a wide range of refer-  
ence voltages can be programmed (standard voltage  
settings are provided, but customer-specific voltages  
are available).  
Figure 1.  
VIN = +6-9V  
10µF  
0.01µF  
VIN  
VOUT  
X60008-50  
GND  
0.001µF-0.01µF  
REF IN  
Enable  
SCK  
SDAT  
Serial  
Bus  
The process used for these reference devices is a  
floating gate CMOS process, and the amplifier circuitry  
uses CMOS transistors for amplifier and output tran-  
sistor circuitry. While providing excellent accuracy,  
there are limitations in output noise level and load reg-  
ulation due to the MOS device characteristics. These  
limitations are addressed with circuit techniques dis-  
cussed in other sections.  
12 to 24-bit  
A/D Converter  
Board mounting Considerations  
For applications requiring the highest accuracy, board  
mounting location should be reviewed. Placing the  
device in areas subject to slight twisting can cause  
degradation of the accuracy of the reference voltage  
due to die stresses. It is normally best to place the  
device near the edge of a board, or the shortest side,  
as the axis of bending is most limited at that location.  
Obviously mounting the device on flexprint or  
extremely thin PC material will likewise cause loss of  
reference accuracy.  
Nanopower Operation  
Reference devices achieve their highest accuracy  
when powered up continuously, and after initial stabili-  
zation has taken place. For example, power-up drift on  
a high accuracy reference can reach 20ppm or more  
in the first 30 seconds, and generally will settle to a  
stable value in 100 hours or so. This drift can be elimi-  
nated by leaving the power-on continuously.  
The X60008 is the first high precision voltage reference  
with ultra low power consumption that makes it possible  
to leave power-on continuously in battery operated cir-  
cuits. The X60008 consumes extremely low supply cur-  
rent due to the proprietary FGA technology. Supply  
current at room temperature is typically 500nA which is  
1 to 2 orders of magnitude lower than competitive  
devices. Application circuits using battery power will  
benefit greatly from having an accurate, stable refer-  
ence which essentially presents no load to the battery.  
Noise Performance and Reduction:  
The output noise voltage in a 0.1Hz to 10Hz bandwidth  
is typically 30µVp-p. This is shown in the plot in the  
Typical Performance Curves. The noise measurement  
is made with a bandpass filter made of a 1 pole high-  
pass filter with a corner frequency at .1Hz and a 2-pole  
low-pass filter with a corner frequency at 12.6Hz to  
create a filter with a 9.9Hz bandwidth. Noise in the  
10KHz to 1MHz bandwidth is approximately 400µVp-p  
with no capacitance on the output, as shown in Fig. 2  
below. These noise measurements are made with a 2  
decade bandpass filter made of a 1 pole high-pass filter  
with a corner frequency at 1/10 of the center frequency  
and 1-pole low-pass filter with a corner frequency at 10  
times the center frequency. Figure 2 also shows the  
noise in the 10KHz to 1MHz band can be reduced to  
about 50µVp-p using a .001µF capacitor on the output.  
Noise in the 1KHz to 100KHz band can be further  
reduced using a 0.1µF capacitor on the output, but  
In particular, battery powered data converter circuits  
that would normally require the entire circuit to be dis-  
abled when not in use can remain powered up  
between conversions as shown in figure 1. Data acqui-  
sition circuits providing 12 to 24 bits of accuracy can  
operate with the reference device continuously biased  
with no power penalty, providing the highest accuracy  
and lowest possible long term drift.  
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X60008E-50  
noise in the 1Hz to 100Hz band increases due to  
Figure 4.  
instability of the very low power amplifier with a 0.1µF  
capacitance load. For load capacitances above  
.001µF the noise reduction network shown in fig. 3 is  
recommended. This network reduces noise sig-  
nificantly over the full bandwidth. As shown in fig. 2,  
noise is reduced to less than 40µVp-p from 1Hz to  
1MHz using this network with a .01µF capacitor and a  
2kresistor in series with a 10µF capacitor.  
X60008-50 TURN-ON TIME (25°C)  
7
6
5
4
3
I
= 730nA  
IN  
I
= 500nA  
IN  
I
= 320nA  
IN  
Figure 2.  
2
1
X60008-50 NOISE REDUCTION  
400  
CL = 0  
0
-1  
350  
1
3
5
7
9
11  
13  
15  
CL = .001µF  
CL = .1µF  
TIME (mSec)  
300  
CL = .01µF & 10µF + 2k  
250  
Temperature Coefficient  
200  
150  
100  
The limits stated for temperature coefficient (tempco)  
are governed by the method of measurement. The  
overwhelming standard for specifying the temperature  
drift of a reference is to measure the reference voltage  
at two temperatures, take the total variation, (V  
-
HIGH  
50  
0
V
), and divide by the temperature extremes of  
LOW  
measurement (T  
- T  
). The result is divided by  
HIGH  
LOW  
1
10  
100  
1000  
10000  
100000  
the nominal reference voltage (at T = 25°C) and multi-  
6
plied by 10 to yield ppm/°C. This is the “Box” method  
for temperature coefficient which allows comparison of  
devices but can mislead a designer concerned about  
specific ranges of temperature (i.e., 35°C to 65°C for a  
power supply design). The designer may infer the  
tempco to be a well-behaved flat line slope, similar to  
that shown in Figure 5. The slope of the Vout vs. tem-  
perature curve at points in-between the extremes can  
actually be much higher than the tempco stated in the  
specifications due to multiple inflections in the temper-  
ature drift curve. Most notably, bandgap devices may  
have some type of “s-curve” which will have slopes  
that exceed the average specified tempco by 2x or 3x.  
Figure 3.  
VIN = 6.5V  
VIN  
10µF  
VO  
.1µF  
X60008-50  
GND  
2kΩ  
.01µF  
10µF  
Turn-On Time  
The X60008 devices have ultra-low supply current and  
thus the time to bias up internal circuitry to final values  
will be longer than with higher power references. Nor-  
mal turn-on time is typically 7ms. This is shown in the  
graph, Figure 4. Since devices can vary in supply cur-  
rent down to 300nA, turn-on time can last up to about  
12ms. Care should be taken in system design to  
include this delay before measurements or conver-  
sions are started.  
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X60008E-50  
Figure 5. Flat Line Slope Tempco Curves  
(Vout = 5V)  
The tempco curve for the X60008 devices is generally  
flat (within 0.5ppm/°C typically) over the industrial tem-  
perature range (-40 to 85°C) with some inflection at  
the extreme temperatures. The combination of very  
low tempco performance a predictable tempco slope is  
unique to the X60008 due to its floating gate technol-  
ogy. This behavior is much easier to consider when  
designing data conversion systems or control systems  
that must operate over a range of temperatures.  
Temp-Co (Normalized to +25°C)  
10.0  
20ppm/°C  
5.0  
0.0  
-5.0  
20ppm/°C  
-10.0  
-40°C  
25°C  
85°C  
Temperature  
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X60008E-50  
TYPICAL APPLICATION CIRCUITS  
Precision 5V, 50mA Reference.  
VIN = 6V-9V  
R = 200Ω  
2N2905  
VIN  
X60008-50  
VOUT  
5.0V/50mA  
0.009µF  
GND  
±5.0V Dual Output, High Accuracy Reference  
+5.3-9.0V  
0.1µF  
VIN  
X60008-50  
VOUT  
5.0V  
0.001µF  
0.001µF  
GND  
VIN  
X60008-50  
5.0V - VIN  
IOUT  
R1 =  
; IOUT 10mA  
VOUT  
GND  
R1  
-VIN = -5.5V to -9.0V  
-5.0V  
Kelvin Sensed Load  
+5.3-9.0V  
0.1µF  
VIN  
VOUT  
+
V
OUT Sense  
Load  
X60008-50  
GND  
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X60008E-50  
TYPICAL APPLICATION CIRCUITS  
Negative Voltage Reference  
X60008-50  
R
VIN  
VOUT  
GND  
CIN 0.001  
COUT = 0.001µF  
-5.0V  
R1 = 200  
R1 Limits max load current  
with RI = 200; ILOAD MAX = 4mA  
-9V  
5V Full Scale Low-Drift 10-bit Adjustable Voltage Source  
5.3-9.0V  
0.1µF  
VIN  
VOUT  
X60008-50  
GND  
0.01µF  
VCC  
X9119  
SDA  
SCL  
RH  
VOUT  
+
2-Wire Bus  
VOUT  
(buffered)  
VSS RL  
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X60008E-50  
PACKAGING INFORMATION  
8-Lead Plastic, SOIC, Package Code S8  
0.150 (3.80) 0.228 (5.80)  
0.158 (4.00) 0.244 (6.20)  
Pin 1 Index  
Pin 1  
0.014 (0.35)  
0.019 (0.49)  
0.188 (4.78)  
0.197 (5.00)  
(4X) 7°  
0.053 (1.35)  
0.069 (1.75)  
0.004 (0.19)  
0.010 (0.25)  
0.050 (1.27)  
0.010 (0.25)  
0.050" Typical  
X 45°  
0.020 (0.50)  
0.050"  
Typical  
0° - 8°  
0.0075 (0.19)  
0.010 (0.25)  
0.250"  
0.016 (0.410)  
0.037 (0.937)  
0.030"  
Typical  
8 Places  
FOOTPRINT  
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN8145.0  
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INTERSIL

X60008EIS8-50

Precision 5.0V FGA Voltage Reference
INTERSIL

X60008EIS8-50

1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5V, PDSO8, PLASTIC, SOIC-8
RENESAS

X60008EIS8-50T1

1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5V, PDSO8, PLASTIC, SOIC-8
RENESAS

X60008EIS8Z-41

Precision 4.096V FGA⑩ Voltage
INTERSIL

X60008XIS8-41

Precison 4.096V FGA Voltage Reference
INTERSIL

X60250

Micro Power Programmable Voltage Reference
INTERSIL

X60250V8I

Micro Power Programmable Voltage Reference
INTERSIL

X60250V8IZ

Micro Power Programmable Voltage Reference
INTERSIL

X6612TX4

10/100 BASE MAGNETIC MODULE
XFMRS

X6753M

SAW bandpass filter Bandpass filters for terrestrial TV applications
EPCOS