ISL84581IAZ [INTERSIL]

Low-Voltage, Single and Dual Supply, 8-to-1 Multiplexer; 低电压,单电源和双电源, 8到1多路复用器
ISL84581IAZ
型号: ISL84581IAZ
厂家: Intersil    Intersil
描述:

Low-Voltage, Single and Dual Supply, 8-to-1 Multiplexer
低电压,单电源和双电源, 8到1多路复用器

复用器
文件: 总15页 (文件大小:417K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISL84581  
®
Data Sheet  
April 13, 2009  
FN6416.3  
Low-Voltage, Single and Dual Supply,  
8-to-1 Multiplexer  
Features  
• Fully Specified at 3.3V, 5V, ±5V, and 12V Supplies for 10%  
Tolerances  
The Intersil ISL84581 device contains precision,  
bidirectional, analog switches configured as an 8-to-1  
multiplexer/demultiplexer. It was designed to operate from a  
single +2V to +12V single supply or from dual ±2V to ±6V  
supplies. The device has an inhibit pin to simultaneously  
open all signal paths.  
• ON-Resistance (r ) Max, V = ±4.5V . . . . . . . . . . . 50Ω  
ON  
S
• ON-Resistance (r ) Max, V = +3V. . . . . . . . . . . . 155Ω  
ON  
S
• r  
ON  
Matching Between Channels, V = ±5V . . . . . . . . .<2Ω  
S
• Low Charge Injection, V = ±5V . . . . . . . . . . . . . 1pC (Max)  
S
The ISL84581 has an ON-resistance of 39Ω with a dual ±5V  
supply and 125Ω with a single +3.3V supply. Each switch  
can handle rail-to-rail analog signals. The off-leakage current  
is only 0.02nA at +25°C or 0.2nA at +85°C.  
• Single Supply Operation. . . . . . . . . . . . . . . . . . . +2V to +12V  
• Dual Supply Operation . . . . . . . . . . . . . . . . . . . . . ±2V to ±6V  
• Fast Switching Action (V = +5V)  
S
- t  
- t  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38ns  
All digital inputs have 0.8V to 2.4V logic thresholds, ensuring  
TTL/CMOS logic compatibility when using a single 3.3V or  
+5V supply or dual ±5V supplies.  
ON  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19ns  
OFF  
• Guaranteed Max Off-leakage . . . . . . . . . . . . . . . . . . .2.5nA  
• Guaranteed Break-Before-Make  
• TTL, CMOS Compatible  
The ISL84581 is a single 8-to-1 multiplexer device. Table 1  
summarizes the performance of the part.  
TABLE 1. FEATURES AT A GLANCE  
• Pb-free (RoHS Compliant)  
CONFIGURATION  
SINGLE 8:1 MUX  
±5V r  
ON  
39Ω  
32ns/18ns  
32Ω  
Applications  
±5V t /t  
ON OFF  
• Battery Powered, Handheld, and Portable Equipment  
12V r  
ON  
• Communications Systems  
- Radios  
12V t /t  
ON OFF  
23ns/15ns  
65Ω  
- Telecom Infrastructure  
- ADSL, VDSL Modems  
5V r  
ON  
5V t /t  
ON OFF  
38ns/19ns  
125Ω  
Test Equipment  
3.3V r  
ON  
- Medical Ultrasound  
- Magnetic Resonance Image  
- CT and PET Scanners (MRI)  
- ATE  
3.3V t /t  
70ns/32ns  
16 Ld TSSOP, 16 Ld QSOP  
ON OFF  
Package  
Related Literature  
- Electrocardiograph  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
• Audio and Video Signal Routing  
• Various Circuits  
- +3V/+5V DACs and ADCs  
- Sample and Hold Circuits  
- Operational Amplifier Gain Switching Networks  
- High Frequency Analog Switching  
- High Speed Multiplexing  
• Application Note AN557 “Recommended Test Procedures  
for Analog Switches”  
• Application Note AN520 “CMOS Analog Multiplexers and  
Switches; Specifications and Application Considerations.”  
• Application Note AN1034 “Analog Switch and Multiplexer  
Applications”  
- Integrator Reset Circuits  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2007-2009. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  
ISL84581  
Pinout  
ISL84581  
(16 LD TSSOP, QSOP)  
TOP VIEW  
NO1  
NO3  
COM  
NO7  
NO5  
INH  
1
2
3
4
5
6
7
8
16 V+  
15 NO2  
14 NO4  
13 NO0  
12 NO6  
11 ADDC  
10 ADDB  
LOGIC  
V-  
9
ADDA  
GND  
NOTE: Switches Shown for Logic “0” Inputs.  
Truth Tables  
Pin Descriptions  
ISL84581  
PIN  
FUNCTION  
INH  
0
ADDC  
ADDB  
ADDA  
SWITCH ON  
NO0  
V+  
V-  
Positive Power Supply Input  
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
X
Negative Power Supply Input. Connect to GND for  
Single Supply Configurations.  
0
NO1  
GND  
INH  
Ground Connection  
0
NO2  
Digital Control Input. Connect to GND for Normal  
Operation. Connect to V+ to turn all switches off.  
0
NO3  
0
NO4  
ADDx Address Input Pin  
0
NO5  
COM  
NOx  
Analog Switch Common Pin  
0
NO6  
Analog Switch Normally Open Pin  
0
NO7  
1
NONE  
NOTE: Logic “0” 0.8V. Logic “1” 2.4V, with V+ between 2.7V and  
10V. X = Don’t Care.  
Ordering Information  
PART NUMBER  
(Note)  
PART  
MARKING  
TEMP RANGE  
PACKAGE  
(Pb-free)  
PKG.  
DWG. #  
(°C)  
ISL84581IVZ  
84581 IVZ  
-40 to +85  
-40 to +85  
-40 to +85  
-40 to +85  
16 Ld TSSOP (4.4mm)  
M16.173  
ISL84581IVZ-T*  
ISL84581IAZ  
84581 IVZ  
84581 IAZ  
84581 IAZ  
16 Ld TSSOP (4.4mm) Tape and Reel  
16 Ld QSOP (4.4mm)  
M16.173  
M16.15A  
M16.15A  
ISL84581IAZ-T*  
16 Ld QSOP (4.4mm) Tape and Reel  
* Please refer to TB347 for details on reel specifications.  
NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100%  
matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil  
Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
FN6416.3  
April 13, 2009  
2
ISL84581  
Absolute Maximum Ratings  
Thermal Information  
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 15V  
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 15V  
V- to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15V to 0.3V  
Input Voltages  
INH, NOx, ADDx (Note 1). . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)  
Output Voltages  
COM (Note 1). . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)  
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . ±30mA  
Peak Current NOx, COM  
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . ±100mA  
ESD Rating  
Thermal Resistance (Typical, Note 2)  
θ
(°C/W)  
JA  
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .  
16 Ld QSOP Package . . . . . . . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature (Plastic Package). . . . . . . +150°C  
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C  
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
110  
160  
Operating Conditions  
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C  
Human Body Model (Per Mil-STD-883, Method 3015.7) . . >2.5kV  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and  
result in failures not covered by warranty.  
NOTES:  
1. Signals on NOx, COM, ADDx, INH exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to maximum current ratings.  
2. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
Electrical Specifications ±5V Supply  
Test Conditions: V  
Unless Otherwise Specified.  
= ±4.5V to ±5.5V, GND = 0V, V  
INH  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
SUPPLY  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
ANALOG  
(Note 10)  
Full  
25  
V-  
-
-
44  
V+  
60  
80  
4
V
Ω
ON-Resistance, r  
V
= ±4.5V, I  
= 2mA, V  
= 2mA, V  
= 2mA, V  
= 3V  
ON  
S
COM  
NO  
NO  
NO  
(See Figure 5)  
Full  
25  
-
-
Ω
r
r
Matching Between Channels, Δr  
V
V
= ±4.5V, I  
= ±4.5V, I  
= 3V (Note 5)  
= ±3V, 0.1V  
-
1.3  
-
Ω
ON  
ON  
ON  
S
S
COM  
COM  
Full  
25  
-
6
Ω
Flatness, r  
-
7.5  
-
9
Ω
FLAT(ON)  
(Note 6)  
Full  
25  
-
12  
-
Ω
NO OFF Leakage Current, I  
V
V
V
= ±5.5V, V  
= ±4.5V, V  
= ±4.5V, V  
= +4.5V (Note 7)  
= +4.5V (Note 7)  
-
0.02  
0.2  
0.02  
0.2  
0.02  
0.2  
nA  
nA  
nA  
nA  
nA  
nA  
NO(OFF)  
S
S
S
COM  
COM  
COM  
NO  
NO  
Full  
25  
-
-
COM OFF Leakage Current, I  
= ±5.5V, V  
= ±5.5V, V  
-
-
COM(OFF)  
COM(ON)  
Full  
25  
-
-
COM ON Leakage Current, I  
= V  
= ±4.5V (Note 7)  
-
-
NO  
Full  
-
-
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Input Voltage Low, V  
, V  
INHH ADDH  
Full  
Full  
Full  
2.4  
-
-
-
-
-
V
V
, V  
INHL ADDL  
0.8  
0.5  
Input Current, I  
, I  
I
, I  
V
= ±5.5V, V , V  
INH ADD  
= 0V or V+, (Note 9)  
-0.5  
µA  
ADDH ADDL, INHH INHL  
S
DYNAMIC CHARACTERISTICS  
INHIBIT Turn-ON Time, t  
V
V
= ±4.5V, V  
= ±3V, R = 300Ω, C = 35pF,  
25  
Full  
25  
-
-
-
-
-
-
35  
-
50  
60  
35  
40  
60  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ON  
S
NO  
L
L
= 0 to 3 (See Figure 1, Note 9)  
IN  
INHIBIT Turn-OFF Time, t  
V
V
= ±4.5V, V  
NO  
= ±3V, R = 300Ω, C = 35pF,  
22  
-
OFF  
S
L
L
= 0 to 3 (See Figure 1, Note 9)  
IN  
Full  
25  
Address Transition Time, t  
TRANS  
V
V
= ±4.5V, V  
NO  
= ±3V, R = 300Ω, C = 35pF,  
43  
-
S
L
L
= 0 to 3 (See Figure 1, Note 9)  
IN  
Full  
FN6416.3  
April 13, 2009  
3
ISL84581  
Electrical Specifications ±5V Supply  
Test Conditions: V  
Unless Otherwise Specified. (Continued)  
= ±4.5V to ±5.5V, GND = 0V, V  
INH  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
SUPPLY  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
Break-Before-Make Time, t  
V
V
= ±5.5V, V  
NO  
= 3V, R = 300Ω, C = 35pF,  
Full  
2
7
-
ns  
BBM  
S
L
L
= 0 to 3V (See Figure 3, Note 9)  
IN  
Charge Injection, Q  
C = 1.0nF, V = 0V, R = 0Ω (See Figure 2, Note 9)  
25  
25  
25  
25  
25  
-
-
-
-
-
0.3  
3
1
-
pC  
pF  
pF  
pF  
dB  
L
G
G
NO OFF Capacitance, C  
f = 1MHz, V  
= V  
= V  
= V  
= 0V (See Figure 6)  
= 0V (See Figure 6)  
= 0V (See Figure 6)  
OFF  
NO  
NO  
NO  
COM  
COM  
COM  
COM OFF Capacitance, C  
f = 1MHz, V  
f = 1MHz, V  
21  
26  
92  
-
OFF  
COM ON Capacitance, C  
OFF-Isolation  
-
COM(ON)  
R = 50Ω, C = 15pF, f = 100kHz, V  
NOx  
= 1V  
RMS  
-
L
L
(See Figures 4 and 18)  
POWER SUPPLY CHARACTERISTICS  
Power Supply Range  
(Note 10)  
Full  
Full  
Full  
±2  
-7  
-1  
-
-
-
±6  
7
V
Positive Supply Current, I+  
Negative Supply Current, I-  
V
= ±5.5V, V  
, V  
= 0V or V+, Switch On or  
µA  
µA  
S
INH ADD  
Off, (Note 9)  
1
Electrical Specifications +12V Supply  
Test Conditions: V+ = +10.8V to +13.2V, GND = 0V, V  
Unless Otherwise Specified.  
= 4V, V  
= 0.8V (Note 3),  
INL  
INH  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
ANALOG  
(Note 10)  
Full  
25  
0
-
-
-
-
-
-
-
-
-
-
-
-
37  
V+  
45  
55  
2
2
-
V
Ω
ON-Resistance, r  
V+ = 10.8V, I  
= 1.0mA, V  
= 9V (See Figure 5)  
= 9V (Note 5)  
ON  
COM  
COM  
COM  
NO  
NO  
NO  
Full  
25  
-
Ω
r
Matching Between Channels,  
V+ = 10.8V, I  
= 1.0mA, V  
1.2  
-
Ω
ON  
Δr  
ON  
Full  
Ω
r
Flatness, r  
V+ = 10.8V, I  
= 1.0mA, V  
= 3V, 6V, 9V (Note 6) Full  
5
Ω
ON  
FLAT(ON)  
NO OFF Leakage Current, I  
V+ = 13.2V, V  
= 1V, 12V, V  
= 12V, 1V (Note 7)  
= 1V, 12V (Note 7)  
= 1V, 12V, or  
25  
Full  
25  
0.02  
0.2  
0.02  
0.2  
0.02  
0.2  
-
nA  
nA  
nA  
nA  
nA  
nA  
NO(OFF)  
COM  
NO  
-
COM OFF Leakage Current,  
V+ = 13.2V, V  
= 12V, 1V, V  
-
COM  
NO  
I
COM(OFF)  
Full  
25  
-
COM ON Leakage Current, I  
V+ = 13.2V, V  
COM  
floating (Note 7)  
= 1V, 12V, V  
NO  
-
COM(ON)  
Full  
-
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Input Voltage Low, V  
, V  
INHH ADDH  
Full  
Full  
Full  
3.7  
-
3.3  
2.7  
-
-
V
V
, V  
INHL ADDL  
0.8  
0.5  
Input Current, I  
, I  
I
,
V+ = 13.2V, V  
, V  
= 0V or V+  
-0.5  
µA  
ADDH ADDL, INHH  
INH ADD  
I
INHL  
DYNAMIC CHARACTERISTICS  
INHIBIT Turn-ON Time, t  
V+ = 10.8V, V  
= 10V, R = 300Ω, C = 35pF,  
25  
Full  
25  
-
-
-
-
24  
-
40  
45  
30  
35  
ns  
ns  
ns  
ns  
ON  
NO  
L
L
V
= 0 to 4 (See Figure 1, Note 9)  
IN  
INHIBIT Turn-OFF Time, t  
V+ = 10.8V, V  
= 10V, R = 300Ω, C = 35pF,  
15  
-
OFF  
NO  
L
L
V
= 0 to 4 (See Figure 1, Note 9)  
IN  
Full  
FN6416.3  
April 13, 2009  
4
ISL84581  
Electrical Specifications +12V Supply  
Test Conditions: V+ = +10.8V to +13.2V, GND = 0V, V  
Unless Otherwise Specified. (Continued)  
= 4V, V  
= 0.8V (Note 3),  
INL  
INH  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
Address Transition Time, t  
TRANS  
V+ = 10.8V, V  
= 10V, R = 300Ω, C = 35pF,  
25  
-
-
27  
-
50  
55  
-
ns  
ns  
ns  
NO  
L
L
V
= 0 to 4 (See Figure 1, Note 9)  
IN  
Full  
Full  
Break-Before-Make Time Delay, t  
V+ = 13.2V, R = 300Ω, C = 35pF, V  
= 10V,  
2
5
D
L
L
NO  
V
C
R
= 0 to 4 (See Figure 3, Note 9)  
IN  
Charge Injection, Q  
OFF-Isolation  
= 1.0nF, V = 0V, R = 0Ω (See Figure 2, Note 9)  
25  
25  
-
-
2.7  
92  
5
-
pC  
dB  
L
L
G
G
= 50Ω, C = 15pF, f = 100kHz  
L
(See Figures 4 and 18)  
NO OFF Capacitance, C  
f = 1MHz, V  
f = 1MHz, V  
f = 1MHz, V  
= V  
= V  
= V  
= 0V (See Figure 6)  
= 0V (See Figure 6)  
= 0V (See Figure 6)  
25  
25  
25  
-
-
-
3
-
-
-
pF  
pF  
pF  
OFF  
NO  
NO  
NO  
COM  
COM  
COM  
COM OFF Capacitance, C  
21  
26  
COM(OFF)  
COM(ON)  
COM ON Capacitance, C  
POWER SUPPLY CHARACTERISTICS  
Power Supply Range  
(Note 10)  
Full  
Full  
2
-
-
12  
7
V
Positive Supply Current, I+  
V+ = 13.2V, V  
off  
, V  
INH ADD  
= 0V or V+, all channels on or  
-7  
µA  
Electrical Specifications 5V Supply  
Test Conditions: V+ = +4.5V to +5.5V, V- = GND = 0V, V  
Unless Otherwise Specified.  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
INH  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
ANALOG  
(Note 10)  
Full  
25  
0
-
-
81  
-
V+  
100  
120  
4
V
Ω
Ω
Ω
Ω
Ω
ON-Resistance, r  
V+ = 4.5V, I  
(See Figure 5)  
= 1.0mA, V  
= 3.5V  
ON  
COM  
NO  
Full  
25  
-
r
Matching Between Channels, Δr  
V+ = 4.5V, I  
= 1.0mA, V  
= 3V (Note 5)  
= 1V, 2V, 3V  
-
2.2  
-
ON  
ON  
ON  
COM  
COM  
NO  
Full  
Full  
-
6
r
Flatness, r  
V+ = 4.5V, I  
(Note 6)  
= 1.0mA, V  
-
11.5  
-
FLAT(ON)  
NO  
NO OFF Leakage Current, I  
V+ = 5.5V, V  
(Note 7)  
= 1V, 4.5V, V  
= 1V, 4.5V, V  
= 4.5V, 1V  
= 4.5V, 1V  
25  
Full  
25  
-
-
-
-
-
-
0.02  
0.2  
-
-
-
-
-
-
nA  
nA  
nA  
nA  
nA  
nA  
NO(OFF)  
COM  
COM  
COM  
NO  
NO  
COM OFF Leakage Current, I  
V+ = 5.5V, V  
(Note 7)  
0.02  
0.2  
COM(OFF)  
COM(ON)  
Full  
25  
COM ON Leakage Current, I  
V+ = 5.5V, V  
= V  
= 4.5V (Note 7)  
0.02  
0.2  
NO  
Full  
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Input Voltage Low, V  
, V  
INHH ADDH  
Full  
Full  
Full  
2.4  
-
-
-
-
-
V
V
, V  
INHL ADDL  
0.8  
0.5  
Input Current, I  
, I  
I
,
V+ = 5.5V, V  
, V  
INH ADD  
= 0V or V+, (Note 9)  
-0.5  
µA  
ADDH ADDL, INHH  
I
INHL  
DYNAMIC CHARACTERISTICS  
INHIBIT Turn-ON Time, t  
V+ = 4.5V, V  
NO  
= 3V, R = 300Ω, C = 35pF,  
25  
-
-
43  
-
60  
70  
ns  
ns  
ON  
L
L
V
= 0 to 3V (see Figure 1, Note 9)  
IN  
Full  
FN6416.3  
April 13, 2009  
5
ISL84581  
Electrical Specifications 5V Supply  
Test Conditions: V+ = +4.5V to +5.5V, V- = GND = 0V, V  
Unless Otherwise Specified. (Continued)  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
INH  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
= 3V, R = 300Ω, C = 35pF,  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
INHIBIT Turn-OFF Time, t  
V+ = 4.5V, V  
NO  
25  
Full  
25  
-
-
20  
-
35  
40  
70  
85  
-
ns  
ns  
ns  
ns  
ns  
OFF  
L
L
V
= 0 to 3V (see Figure 1, Note 9)  
IN  
Address Transition Time, t  
V+ = 4.5V, V  
NO  
= 3V, R = 300Ω, C = 35pF,  
-
51  
-
TRANS  
BBM  
L
L
V
= 0 to 3V (see Figure 1, Note 9)  
IN  
Full  
Full  
-
Break-Before-Make Time, t  
V+ = 5.5V, V  
NO  
= 3V, R = 300Ω, C = 35pF,  
2
9
L
L
V
= 0 to 3V (see Figure 3, Note 9)  
IN  
Charge Injection, Q  
OFF-Isolation  
C = 1.0nF, V = 0V, R = 0Ω (see Figure 2, Note 9)  
25  
25  
-
-
0.6  
92  
1.5  
-
pC  
dB  
L
G
G
R
= 50Ω, C = 15pF, f = 100kHz, V  
= 1V  
NOx RMS  
L
L
(see Figures 4 and 18)  
POWER SUPPLY CHARACTERISTICS  
Power Supply Range  
(Note 10)  
Full  
Full  
Full  
2
-
-
-
12  
7
V
Positive Supply Current, I+  
Positive Supply Current, I-  
V+ = 5.5V, V- = 0V, V  
Switch On or Off, (Note 9)  
, V  
INH ADD  
= 0V or V+,  
-7  
-1  
µA  
µA  
1
Electrical Specifications 3.3V SupplyTest Conditions: V+ = +3.0V to +3.6V, V- = GND = 0V, V  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
INH  
Unless Otherwise Specified  
TEMP  
MIN  
MAX  
PARAMETER  
TEST CONDITIONS  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
ANALOG SWITCH CHARACTERISTICS  
Analog Signal Range, V  
ANALOG  
Full  
25  
0
-
-
135  
-
V+  
180  
200  
8
V
Ω
Ω
Ω
Ω
Ω
ON-Resistance, r  
V+ = 3.0V, I  
V+ = 3.0V, I  
= 1.0mA, V  
NO  
= 1.5V (see Figure 5)  
= 1.5V (Note 5)  
ON  
COM  
Full  
25  
-
r
Matching Between Channels,  
= 1.0mA, V  
NO  
-
3.4  
-
ON  
Δr  
COM  
ON  
Full  
Full  
-
10  
-
r
Flatness, r  
V+ = 3.0V, I  
(Note 6)  
= 1.0mA, V = 0.5V, 1V, 2V  
NO  
-
34  
ON  
FLAT(ON)  
COM  
NO OFF Leakage Current, I  
V+ = 3.6V, V  
V+ = 3.6V, V  
V+ = 3.6V, V  
= 0V, 4.5V, V  
= 0V, 4.5V, V  
= 3V, 1V (Note 7)  
= 3V, 1V (Note 7)  
25  
Full  
25  
-
-
-
-
-
-
0.02  
0.2  
-
-
-
-
-
-
nA  
nA  
nA  
nA  
nA  
nA  
NO(OFF)  
COM  
COM  
COM  
NO  
COM OFF Leakage Current,  
0.02  
0.2  
NO  
I
COM(OFF)  
Full  
25  
COM ON Leakage Current, I  
= V  
= 3V (Note 7)  
NO  
0.02  
0.2  
COM(ON)  
Full  
DIGITAL INPUT CHARACTERISTICS  
Input Voltage High, V  
Input Voltage Low, V  
, V  
INHH ADDH  
Full  
Full  
Full  
2.4  
-
-
-
-
-
V
V
, V  
INHL ADDL  
0.8  
0.5  
Input Current, I  
, I  
I
,
V+ = 3.6V, V  
, V  
INH ADD  
= 0V or V+, (Note 9)  
-0.5  
μA  
ADDH ADDL, INHH  
I
INHL  
DYNAMIC CHARACTERISTICS  
INHIBIT Turn-ON Time, t  
V+ = 3.0V, V  
= 1.5V, R = 300Ω, C = 35pF,  
25  
-
-
82  
-
100  
120  
ns  
ns  
ON  
NO  
L
L
V
= 0V to 3V (see Figure 1, Note 9)  
IN  
Full  
FN6416.3  
April 13, 2009  
6
ISL84581  
Electrical Specifications 3.3V SupplyTest Conditions: V+ = +3.0V to +3.6V, V- = GND = 0V, V  
Unless Otherwise Specified (Continued)  
= 2.4V, V  
= 0.8V (Note 3),  
INL  
INH  
TEMP  
MIN  
MAX  
PARAMETER  
INHIBIT Turn-OFF Time, t  
TEST CONDITIONS  
= 1.5V, R = 300Ω, C = 35pF,  
(°C) (Notes 4, 8) TYP (Notes 4, 8) UNITS  
V+ = 3.0V, V  
25  
Full  
25  
-
-
37  
-
50  
60  
ns  
ns  
ns  
ns  
ns  
OFF  
NO  
L
L
V
= 0V to 3V (see Figure 1, Note 9)  
IN  
Address Transition Time, t  
Break-Before-Make Time, t  
V+ = 3.0V, V  
= 1.5V, R = 300Ω, C = 35pF,  
-
96  
-
120  
145  
-
TRANS  
BBM  
NO  
L
L
V
= 0V to 3V (see Figure 1, Note 9)  
IN  
Full  
Full  
-
V+ = 3.6V, V  
= 1.5V, R = 300Ω, C = 35pF,  
3
13  
NO  
L
L
V
= 0V to 3V (see Figure 3, Note 9)  
IN  
Charge Injection, Q  
OFF-Isolation  
C = 1.0nF, V = 0V, R = 0Ω (see Figure 2, Note 9)  
25  
25  
-
-
0.3  
92  
1
-
pC  
dB  
L
G
G
R
= 50Ω, C = 15pF, f = 100kHz,  
L
L
V
= 1V  
(see Figures 4 and 18)  
NO  
RMS  
POWER SUPPLY CHARACTERISTICS  
Power Supply Range  
(Note 10)  
Full  
2
-
12  
V
NOTES:  
3. V = Input logic voltage to configure the device in a given state.  
IN  
4. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
5. Δr = r (MAX) - r (MIN).  
ON ON  
ON  
6. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.  
7. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at +25°C.  
8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization  
and are not production tested.  
9. Limits established by characterization and are not production tested.  
10. Limits should be considered typical and are not production tested.  
Test Circuits and Waveforms  
V+  
V-  
C
C
C
3V  
0V  
t < 20ns  
r
t < 20ns  
f
LOGIC  
INPUT  
50%  
V+  
NO0  
V
OUT  
t
ON  
COM  
NO1-NO7  
INH  
V
ADDA-C  
OUT  
VNO0  
0V  
GND  
C
35pF  
90%  
90%  
L
R
300Ω  
L
LOGIC  
INPUT  
SWITCH  
OUTPUT  
t
OFF  
Logic input waveform is inverted for switches that have the opposite  
logic sense.  
Repeat test for other switches. C includes fixture and stray  
L
capacitance.  
R
L
-----------------------  
V
= V  
OUT  
(NO or NC)  
R
+ r  
ON  
L
FIGURE 1B. INHIBIT t /t  
ON OFF  
TEST CIRCUIT  
FIGURE 1A. INHIBIT t /t  
ON OFF  
MEASUREMENT POINTS  
FN6416.3  
April 13, 2009  
7
ISL84581  
Test Circuits and Waveforms (Continued)  
V+  
V-  
3V  
0V  
t < 20ns  
r
t < 20ns  
f
C
C
C
LOGIC  
INPUT  
50%  
V+  
NO0  
t
TRANS  
V
V
OUT  
V-  
NO7  
COM  
C
NO1-NO6  
OUT  
VNO0  
0V  
90%  
ADDA-C  
INH  
GND  
C
35pF  
L
R
300Ω  
L
SWITCH  
OUTPUT  
LOGIC  
INPUT  
10%  
VNO  
X
t
TRANS  
Repeat test for other switches. C includes fixture and stray  
L
Logic input waveform is inverted for switches that have the opposite  
logic sense.  
capacitance.  
R
L
-----------------------  
V
= V  
OUT  
(NO or NC)  
R
+ r  
ON  
L
FIGURE 1D. ADDRESS t  
TEST CIRCUIT  
TRANS  
FIGURE 1C. ADDRESS t  
MEASUREMENT POINTS  
TRANS  
FIGURE 1. SWITCHING TIMES  
V+  
V-  
C
C
V
3V  
OUT  
R
OFF  
G
OFF  
COM  
LOGIC  
INPUT  
NO  
ON  
0V  
0Ω  
ADDX  
GND  
INH  
SWITCH  
OUTPUT  
V
C
L
1nF  
G
ΔV  
OUT  
LOGIC  
INPUT  
V
OUT  
Q = ΔV  
x C  
L
OUT  
Repeat test for other switches.  
FIGURE 2B. Q TEST CIRCUIT  
FIGURE 2A. Q MEASUREMENT POINTS  
FIGURE 2. CHARGE INJECTION  
V+  
V-  
C
C
t < 20ns  
r
t < 20ns  
f
3V  
0V  
C
LOGIC  
INPUT  
V
OUT  
COM  
C
35pF  
R
L
300Ω  
L
NO0-NO7  
ADDA-C  
V+  
80%  
SWITCH  
OUTPUT  
V
OUT  
LOGIC  
INPUT  
INH  
GND  
0V  
t
BBM  
Repeat test for other switches. C includes fixture and stray  
L
capacitance.  
FIGURE 3A. t  
BBM  
MEASUREMENT POINTS  
FIGURE 3B. t  
TEST CIRCUIT  
BBM  
FIGURE 3. BREAK-BEFORE-MAKE TIME  
FN6416.3  
April 13, 2009  
8
ISL84581  
Test Circuits and Waveforms (Continued)  
V+  
V-  
V+  
V-  
C
C
C
C
r
= V /1mA  
1
ON  
SIGNAL  
GENERATOR  
NOx  
NO  
V
NOX  
0V OR V+  
0V OR V+  
0V OR V+  
1mA  
V
1
ADDX  
ADDX  
COM  
ANALYZER  
COM  
INH  
GND  
INH  
GND  
R
L
FIGURE 4. OFF-ISOLATION TEST CIRCUIT  
FIGURE 5. r  
TEST CIRCUIT  
ON  
V+  
V-  
C
C
NOx  
0V OR V+  
ADDX  
INH  
IMPEDANCE  
ANALYZER  
COM  
GND  
FIGURE 6. CAPACITANCE TEST CIRCUIT  
FN6416.3  
April 13, 2009  
9
ISL84581  
Power-Supply Considerations  
Detailed Description  
The ISL84581 construction is typical of most CMOS analog  
switches, in that it has three supply pins: V+, V-, and GND.  
V+ and V- drive the internal CMOS switches and set their  
analog voltage limits, so there are no connections between  
the analog signal path and GND. Unlike switches with a 13V  
maximum supply voltage, the ISL84581 15V maximum  
supply voltage provides plenty of room for the 10% tolerance  
of 12V supplies (±6V or 12V single supply), as well as room  
for overshoot and noise spikes.  
The ISL84581 multiplexer offers precise switching capability  
from bipolar ±2V to ±6V supplies or a single 2V to 12V  
supply. When powered with dual ±5V supplies the part has  
low ON-resistance (39Ω) and high speed operation  
(t  
= 38ns, t = 19ns).  
ON  
OFF  
It has an inhibit pin to simultaneously open all signal paths.  
The device is especially well suited for applications using  
±5V supplies. With ±5V supplies the performance (r  
Leakage, Charge Injection, etc.) is best in class.  
,
ON  
The part performs equally well when operated with bipolar or  
single voltage supplies.The minimum recommended supply  
voltage is 2V single supply or ±2V dual supply. It is important  
to note that the input signal range, switching times, and  
ON-resistance degrade at lower supply voltages. Refer to  
the “Electrical Specification” tables on page 4 and “Typical  
Performance Curves” on page 11 for details.  
High frequency applications also benefit from the wide  
bandwidth and high off-isolation.  
Supply Sequencing And Overvoltage Protection  
With any CMOS device, proper power supply sequencing is  
required to protect the device from excessive input currents  
which might permanently damage the IC. All I/O pins contain  
ESD protection diodes from the pin to V+ and to V- (see  
Figure 7). To prevent forward biasing these diodes, V+ and  
V- must be applied before any input signals, and input signal  
voltages must remain between V+ and V-. If these conditions  
cannot be guaranteed, then one of the following two  
protection methods should be employed.  
V+ and GND power the internal logic setting the digital  
switching point of the level shifters. The level shifters convert  
the logic levels to switched V+ and V- signals to drive the  
analog switch gate terminals.  
Logic-Level Thresholds  
V+ and GND power the internal logic stages, so V- has no  
affect on logic thresholds. This ISL84581 is TTL compatible  
(0.8V and 2.4V) over a V+ supply range of 2.7V to 10V. At  
Logic inputs can easily be protected by adding a 1kΩ  
resistor in series with the input (see Figure 7). The resistor  
limits the input current below the threshold that produces  
permanent damage, and the sub-microamp input current  
produces an insignificant voltage drop during normal  
operation.  
12V the V level is about 3.3V. This is still below the CMOS  
IH  
guaranteed high output minimum level of 4V, but noise  
margin is reduced. For best results with a 12V supply, use a  
logic family that provides a V  
OH  
greater than 4V.  
The digital input stages draw supply current whenever the  
digital input voltage is not at one of the supply rails. Driving  
the digital input signals from GND to V+ with a fast transition  
time minimizes power dissipation.  
This method is not applicable for the signal path inputs.  
Adding a series resistor to the switch input defeats the  
purpose of using a low r  
switch, so two small signal  
ON  
diodes can be added in series with the supply pins to provide  
overvoltage protection for all pins (see Figure 7). These  
additional diodes limit the analog signal from 1V below V+ to  
1V above V-. The low leakage current performance is  
unaffected by this approach, but the switch resistance may  
increase, especially at low supply voltages.  
High-Frequency Performance  
In 50Ω systems, signal response is reasonably flat even past  
100MHz (see Figures 16 and 17). Figures 16 and 17 also  
illustrate that the frequency response is very consistent over  
varying analog signal levels.  
OPTIONAL  
An OFF switch acts like a capacitor and passes higher  
frequencies with less attenuation, resulting in signal feed  
through from a switch’s input to its output. Off-isolation is the  
resistance to this feed through. Figure 18 details the high off  
isolation of the ISL84581. At 10MHz, off-isolation is about  
55dB in 50Ω systems, decreasing approximately 20dB per  
decade as frequency increases. Higher load impedances  
decrease off-isolation due to the voltage divider action of the  
switch OFF impedance and the load impedance.  
PROTECTION  
OPTIONAL PROTECTION  
DIODE  
RESISTOR  
FOR LOGIC  
INPUTS  
V+  
1kΩ  
LOGIC  
V
V
COM  
NOx  
V-  
OPTIONAL PROTECTION  
DIODE  
FIGURE 7. INPUT OVERVOLTAGE PROTECTION  
FN6416.3  
April 13, 2009  
10  
ISL84581  
V+ or V- and the analog signal. This means their leakages  
Leakage Considerations  
will vary as the signal varies. The difference in the two diode  
leakages to the V+ and V- pins constitutes the  
Reverse ESD protection diodes are internally connected  
between each analog-signal pin and both V+ and V-. One  
of these diodes conducts if any analog signal exceeds V+  
or V-.  
analog-signal-path leakage current. All analog leakage  
current flows between each pin and one of the supply  
terminals, not to the other switch terminal. This is why both  
sides of a given switch can show leakage currents of the  
same or opposite polarity. There is no connection between  
the analog signal paths and GND.  
Virtually all the analog leakage current comes from the ESD  
diodes to V+ or V-. Although the ESD diodes on a given  
signal pin are identical and therefore fairly well balanced,  
they are reverse biased differently. Each is biased by either  
Typical Performance Curves T = +25°C, Unless Otherwise Specified  
A
120  
V
= ±2V  
110  
S
I
= 1mA  
COM  
70  
+85°C  
100  
V
= (V+) - 1V  
COM  
= 1mA  
V- = -5V  
90  
80  
70  
60  
50  
60  
50  
40  
30  
I
COM  
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
90  
80  
70  
60  
50  
40  
30  
V
= ±3V  
S
20  
400  
+85°C  
V- = 0V  
+25°C  
-40°C  
300  
200  
100  
0
60  
50  
40  
30  
20  
V
= ±5V  
+85°C  
S
+85°C  
+25°C  
+25°C  
-40°C  
-40°C  
-5  
-4  
-3  
-2  
-1  
0
1
2
3
4
5
3
4
5
6
7
8
9
10  
11  
12  
2
V
(V)  
V+ (V)  
COM  
FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE  
FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE  
225  
60  
55  
50  
45  
40  
35  
30  
25  
20  
I
= 1mA  
COM  
200  
I
= 1mA  
V+ = 12V  
V- = 0V  
COM  
175  
150  
+85°C  
125  
100  
+25°C  
-40°C  
V+ = 2.7V  
V- = 0V  
75  
160  
140  
120  
100  
80  
+85°C  
+85°C  
+25°C  
-40°C  
V+ = 3.3V  
V- = 0V  
60  
+25°C  
100  
90  
80  
V+ = 5V  
V- = 0V  
+85°C  
70 +25°C  
60  
50  
40  
-40°C  
-40°C  
0
2
4
6
8
10  
12  
0
1
2
3
4
5
V
(V)  
V
(V)  
COM  
COM  
FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE  
FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE  
FN6416.3  
April 13, 2009  
11  
ISL84581  
Typical Performance Curves T = +25°C, Unless Otherwise Specified (Continued)  
A
500  
400  
300  
200  
100  
200  
150  
100  
50  
V
= (V+) - 1V  
V- = -5V  
V
= (V+) - 1V  
COM  
V- = -5V  
COM  
-40°C  
+25°C  
-40°C  
+25°C  
+25°C  
+85°C  
+25°C  
+85°C  
-40°C  
0
-40°C  
0
250  
100  
V- = 0V  
V- = 0V  
200  
150  
100  
50  
80  
60  
40  
20  
0
+85°C  
+85°C  
+25°C  
+25°C  
-40°C  
-40°C  
0
2
3
4
5
6
7
8
9
10  
11  
12  
2
3
4
5
6
7
8
9
10  
11  
12  
V+ (V)  
V+ (V)  
FIGURE 12. INHIBIT TURN-ON TIME vs SUPPLY VOLTAGE  
FIGURE 13. INHIBIT TURN-OFF TIME vs SUPPLY VOLTAGE  
300  
250  
V
= (V+) - 1V  
COM  
V
= (V+) - 1V  
COM  
V- = 0V  
250  
200  
150  
100  
50  
200  
150  
100  
50  
+25°C  
+25°C  
+85°C  
+85°C  
-40°C  
-40°C  
0
0
2
3
4
5
6
2
3
4
5
6
7
8
9
10  
11  
12  
13  
V± (V)  
V+ (V)  
FIGURE 15. ADDRESS TRANS TIME vs DUAL SUPPLY  
VOLTAGE  
FIGURE 14. ADDRESS TRANS TIME vs SINGLE SUPPLY  
VOLTAGE  
V
= ±5V  
V
= ±3V  
S
V
= 0.2V  
TO 5V  
P-P P-P  
V
= 0.2V  
P-P  
TO 4V  
P-P  
S
IN  
IN  
3
0
3
0
GAIN  
GAIN  
-3  
-3  
0
0
PHASE  
PHASE  
45  
90  
45  
90  
135  
180  
135  
180  
R
= 50Ω  
R
= 50Ω  
L
L
1M  
10M  
100M  
600M  
1M  
10M  
100M  
600M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
FIGURE 16. FREQUENCY RESPONSE  
FIGURE 17. FREQUENCY RESPONSE  
FN6416.3  
April 13, 2009  
12  
ISL84581  
Typical Performance Curves T = +25°C, Unless Otherwise Specified (Continued)  
A
3
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
V+ = 3V TO 12V OR  
V
= ±2V TO ±5V  
S
2
R
= 50Ω  
L
V+ = 3.3V  
V- = 0V  
1
V+ = 12V  
V- = 0V  
0
V+ = 5V  
V- = 0V  
ISOLATION  
-1  
-2  
-3  
-4  
V
= ±5V  
S
-100  
-110  
-5  
0
5
10  
12  
-2.5  
2.5  
7.5  
1k  
10k  
100k  
1M  
10M  
100M 500M  
V
(V)  
FREQUENCY (Hz)  
COM  
FIGURE 18. OFF ISOLATION  
FIGURE 19. CHARGE INJECTION vs SWITCH VOLTAGE  
Die Characteristics  
SUBSTRATE POTENTIAL (POWERED UP):  
V-  
TRANSISTOR COUNT:  
193  
PROCESS:  
Si Gate CMOS  
FN6416.3  
April 13, 2009  
13  
ISL84581  
Shrink Small Outline Plastic Packages (SSOP)  
Quarter Size Outline Plastic Packages (QSOP)  
M16.15A  
N
16 LEAD SHRINK SMALL OUTLINE PLASTIC PACKAGE  
(0.150” WIDE BODY)  
INDEX  
M
M
B
0.25(0.010)  
H
AREA  
E
INCHES  
MILLIMETERS  
GAUGE  
PLANE  
-B-  
SYMBOL  
MIN  
MAX  
MIN  
1.55  
0.102  
1.40  
0.20  
0.191  
4.80  
3.81  
MAX  
1.73  
0.249  
1.55  
0.31  
0.249  
4.98  
3.99  
NOTES  
A
A1  
A2  
B
0.061  
0.004  
0.055  
0.008  
0.0075  
0.189  
0.150  
0.068  
0.0098  
0.061  
0.012  
0.0098  
0.196  
0.157  
-
1
2
3
-
L
-
0.25  
0.010  
SEATING PLANE  
A
9
-A-  
D
h x 45°  
C
D
E
-
3
-C-  
4
α
A2  
e
A1  
e
0.025 BSC  
0.635 BSC  
-
C
B
H
h
0.230  
0.010  
0.016  
0.244  
0.016  
0.035  
5.84  
0.25  
0.41  
6.20  
0.41  
0.89  
-
0.10(0.004)  
M
M
S
B
0.17(0.007)  
C
A
5
L
6
NOTES:  
N
α
16  
16  
7
1. Symbols are defined in the “MO Series Symbol List” in Section  
2.2 of Publication Number 95.  
0°  
8°  
0°  
8°  
-
Rev. 2 6/04  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate  
burrs. Mold flash, protrusion and gate burrs shall not exceed  
0.15mm (0.006 inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions.  
Interlead flash and protrusions shall not exceed 0.25mm (0.010  
inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual  
index feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. Dimension “B” does not include dambar protrusion. Allowable  
dambar protrusion shall be 0.10mm (0.004 inch) total in excess  
of “B” dimension at maximum material condition.  
10. Controlling dimension: INCHES. Converted millimeter dimen-  
sions are not necessarily exact.  
FN6416.3  
April 13, 2009  
14  
ISL84581  
Thin Shrink Small Outline Plastic Packages (TSSOP)  
M16.173  
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE  
INCHES MILLIMETERS  
MIN  
INDEX  
AREA  
0.25(0.010)  
M
B M  
E
E1  
-B-  
GAUGE  
PLANE  
SYMBOL  
MAX  
0.043  
0.006  
0.037  
0.012  
0.008  
0.201  
0.177  
MIN  
-
MAX  
1.10  
0.15  
0.95  
0.30  
0.20  
5.10  
4.50  
NOTES  
A
A1  
A2  
b
-
-
0.002  
0.033  
0.0075  
0.0035  
0.193  
0.169  
0.05  
0.85  
0.19  
0.09  
4.90  
4.30  
-
1
2
3
-
L
0.25  
0.010  
0.05(0.002)  
SEATING PLANE  
A
9
-A-  
c
-
D
D
3
-C-  
E1  
e
4
α
0.026 BSC  
0.65 BSC  
-
A2  
e
A1  
c
E
0.246  
0.020  
0.256  
0.028  
6.25  
0.50  
6.50  
0.70  
-
b
0.10(0.004)  
L
6
0.10(0.004) M  
C
A M B S  
N
16  
16  
7
o
o
o
o
0
8
0
8
-
α
NOTES:  
Rev. 1 2/02  
1. These package dimensions are within allowable dimensions of  
JEDEC MO-153-AB, Issue E.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate  
burrs. Mold flash, protrusion and gate burrs shall not exceed  
0.15mm (0.006 inch) per side.  
4. Dimension “E1” does not include interlead flash or protrusions.  
Interlead flash and protrusions shall not exceed 0.15mm (0.006  
inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual  
index feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. Dimension “b” does not include dambar protrusion. Allowable  
dambar protrusion shall be 0.08mm (0.003 inch) total in excess  
of “b” dimension at maximum material condition. Minimum space  
between protrusion and adjacent lead is 0.07mm (0.0027 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimen-  
sions are not necessarily exact. (Angles in degrees)  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN6416.3  
April 13, 2009  
15  

相关型号:

ISL84581IAZ-T

Low-Voltage, Single and Dual Supply, 8-to-1 Multiplexer
INTERSIL

ISL84581IVZ

Low-Voltage, Single and Dual Supply, 8 to 1 Multiplexer
INTERSIL

ISL84581IVZ-T

Low-Voltage, Single and Dual Supply, 8 to 1 Multiplexer
INTERSIL

ISL84582

Low-Voltage, Single and Dual Supply, Differential 4 to 1 Multiplexer
INTERSIL

ISL84582IVZ

Low-Voltage, Single and Dual Supply, Differential 4 to 1 Multiplexer
INTERSIL

ISL84582IVZ-T

Low-Voltage, Single and Dual Supply, Differential 4 to 1 Multiplexer
INTERSIL

ISL84582IVZ-T13

Differential Multiplexer
RENESAS

ISL84684

Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch
INTERSIL

ISL84684II

Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch in Chipscale Package
INTERSIL

ISL84684IIZ-T

Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch in Chipscale Package
INTERSIL

ISL84684IR

Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch
INTERSIL

ISL84684IR-T

Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switch
INTERSIL