ISL6265HRTZ-T [INTERSIL]

Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable; 多输出控制器,支持AMD SVI有能力集成MOSFET驱动器
ISL6265HRTZ-T
型号: ISL6265HRTZ-T
厂家: Intersil    Intersil
描述:

Multi-Output Controller with Integrated MOSFET Drivers for AMD SVI Capable
多输出控制器,支持AMD SVI有能力集成MOSFET驱动器

驱动器 控制器
文件: 总24页 (文件大小:578K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISL6265  
®
May 13, 2009  
FN6599.1  
Multi-Output Controller with Integrated  
MOSFET Drivers for AMD SVI Capable  
Mobile CPUs  
Features  
• Core Configuration Flexibility  
- Dual Plane, Single-Phase Controllers  
- Uniplane, Two-Phase Controller  
The ISL6265 is a multi-output controller with embedded gate  
drivers. A single-phase controller powers the Northbridge  
(VDDNB) portion of the CPU. The two remaining controller  
channels can be configured for two-phase or individual  
single-phase outputs. For uniplane CPU applications, the  
ISL6265 is configured as a two-phase buck converter. This  
allows the controller to interleave channels to effectively  
double the output voltage ripple frequency and thereby  
reduce output voltage ripple amplitude with fewer  
components, lower component cost, reduced power  
dissipation, and smaller area. For dual-plane processors, the  
ISL6265 can be configured as independent single-phase  
controllers powering VDD0 and VDD1.  
• Precision Voltage Regulators  
- 0.5% System Accuracy Over-temperature  
• Voltage Positioning with Adjustable Load Line and Offset  
• Internal Gate Drivers with 2A Driving Capability  
• Differential Remote CPU Die Voltage Sensing  
• Core Differential Current Sensing: DCR or Resistor  
• Northbridge Lossless rDS(ON) Current Sensing  
• Serial VID Interface  
- Two Wire Clock and Data Bus  
- Supports High-Speed I2C  
The heart of the ISL6265 is the patented R3 Technology™,  
Intersil’s Robust Ripple Regulator modulator. Compared with  
the traditional buck regulator, the R3 Technologyhas a  
faster transient response. This is due to the R3 modulator  
commanding variable switching frequency during a load  
transient.  
- 0.500V to 1.55V in 12.5mV Steps  
- Supports PSI_L Power-Saving Mode  
• Core Outputs Feature Phase Shedding with PSI_L  
• Adjustable Output-Voltage Offset  
• Digital Soft-Start of all Outputs  
• User Programmable Switching Frequency  
• Static and Dynamic Current Sharing (Uniplane Core)  
• Overvoltage, Undervoltage, and Overcurrent Protection  
• Pb-Free (RoHS Compliant)  
The Serial VID Interface (SVI) allows dynamic adjustment of  
the Core and Northbridge output voltages independently and  
in combination from 0.500V to 1.55V. Core and Northbridge  
output voltages achieve a 0.5% system accuracy  
over-temperature.  
A unity-gain differential amplifier is provided for remote CPU  
die sensing. This allows the voltage on the CPU die to be  
accurately regulated per AMD mobile CPU specifications.  
Core output current sensing is realized using lossless  
inductor DCR sensing. All outputs feature overcurrent,  
overvoltage and undervoltage protection.  
Pinout  
ISL6265 (48 LD 6X6 TQFN)  
TOP VIEW  
48 47 46 45 44 43 42 41 40 39 38 37  
Ordering Information  
OFS/VFIXEN  
PGOOD  
PWROK  
SVD  
BOOT_NB  
BOOT_0  
UGATE_0  
PHASE_0  
PGND_0  
LGATE_0  
PVCC  
1
2
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
PART NUMBER  
(Note)  
PART  
MARKING  
PACKAGE  
(Pb-Free)  
PKG.  
DWG. #  
TEMP (°C)  
3
4
ISL6265HRTZ  
ISL6265 HRTZ -10 to +100 48Ld6x6TQFN L48.6x6  
SVC  
5
ISL6265HRTZ-T* ISL6265 HRTZ -10 to +100 48 Ld 6x6 TQFN L48.6x6  
Tape and Reel  
ENABLE  
RBIAS  
OCSET  
VDIFF_0  
FB_0  
49  
GND  
6
7
* Please refer to TB347 for details on reel specifications.  
LGATE_1  
PGND_1  
PHASE_1  
UGATE_1  
BOOT_1  
8
NOTE: These Intersil Pb-free plastic packaged products employ special  
Pb-free material sets; molding compounds/die attach materials and 100%  
matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS  
compliant and compatible with both SnPb and Pb-free soldering  
operations. Intersil Pb-free products are MSL classified at Pb-free peak  
reflow temperatures that meet or exceed the Pb-free requirements of  
IPC/JEDEC J STD-020.  
9
10  
11  
12  
COMP_0  
VW0  
13 14 15 16 17 18 19 20 21 22 23 24  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2008, 2009. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
ISL6265  
Function Block Diagram  
COMP_NB  
RTN_NB  
FB_NB  
FSET_NB  
VSEN_NB  
PVCC  
I
FSET_NB  
VNB  
BOOT_NB  
UGATE_NB  
PHASE_NB  
LGATE_NB  
1
3.0kΩ  
FLT  
1.5kΩ  
SVC  
SVD  
MOSFET  
DRIVER  
NO DROOP  
PSI_L  
MODULATOR  
NB  
E/A  
SHOOT-THRU  
PROTECTION  
I_OFS  
PWROK  
VREF_NB  
VREF0  
VREF_NB  
DE MODE  
PGND_NB  
VIN  
VREF1  
OFS/FIXEN  
PSI_L  
PVCC  
VCC  
POWER-ON  
ENABLE  
RESET AND  
SOFT-START  
LOGIC  
OCSET_NB  
OCSET  
RBIAS  
FLT  
VNB  
V0  
PGOOD  
GND  
FAULT  
PROTECTION  
RTN1  
V1  
ISEN0  
ISEN1  
MODE  
VIN  
VW0  
PVCC  
I
VW0  
COMP0  
FB0  
BOOT0  
UGATE0  
PHASE0  
LGATE0  
FLT  
E/A  
I_OFS  
MOSFET  
DRIVER  
VDIFF0  
VREF0  
SHOOT-THRU  
PROTECTION  
VIN  
V0  
VSEN0  
1
DE MODE  
PGND0  
RTN0  
NO  
DROOP  
MODE  
ISEN0  
ISEN1  
MODULATOR  
CORE  
PSI_L  
ISP0  
CURRENT  
SENSE  
PVCC  
ISN0  
FLT  
MODE  
NO  
CURRENT  
BALANCE  
BOOT1  
UGATE1  
PHASE1  
LGATE1  
ISP1  
CURRENT  
SENSE  
DROOP  
ISN1  
MOSFET  
DRIVER  
MODE  
V1  
VSEN1  
SHOOT-THRU  
PROTECTION  
1
VREF1  
RTN1  
DE MODE  
PGND1  
E/A  
VDIFF1  
I_OFS  
PSI_L  
I
VW1  
FB1  
COMP1  
VW1  
FIGURE 1. SIMPLIFIED FUNCTION BLOCK DIAGRAM OF ISL6265  
FN6599.1  
May 13, 2009  
2
ISL6265  
Simplified Application Circuit for Dual Plane and Northbridge Support  
VIN  
+5V  
VIN  
VCC PVCC  
GND  
+VIN  
SVI DATA  
SVI CLOCK  
ENABLE  
SVD  
C
IN  
SVC  
EN  
UGATE0  
PWROK  
PWROK  
PGOOD  
BOOT0  
PHASE0  
LGATE0  
L
OUT  
VDD0  
VDDPWRGD  
VSEN0  
RTN0  
REMOTE  
SENSE  
CORE  
LOAD  
PGND0  
ISP0  
VSEN1  
RTN1  
REMOTE  
SENSE  
ISN0  
VDD_PLANE_STRAP  
RBIAS  
OFS/VFIXEN  
VDIFF0  
OCSET  
+VIN  
C
IN  
FB0  
UGATE1  
BOOT1  
ISL6265  
COMP0  
L
OUT  
VDD1  
PHASE1  
LGATE1  
VW0  
CORE  
LOAD  
PGND1  
ISP1  
VDIFF1  
ISN1  
+VIN  
FB1  
C
IN  
COMP1  
UGATE_NB  
BOOT_NB  
PHASE_NB  
LGATE_NB  
PGND_NB  
L
OUT  
VDDNB  
VW1  
FSET_NB  
NB  
LOAD  
COMP_NB  
FB_NB  
OCSET_NB  
VSEN_NB  
RTN_NB  
FIGURE 2. ISL6265 BASED DUAL-PLANE AND NORTHBRIDGE CONVERTERS WITH INDUCTOR DCR CURRENT SENSING  
FN6599.1  
May 13, 2009  
3
ISL6265  
Simplified Application Circuit for Uniplane Core and Northbridge Support  
+5V  
+VIN  
VCC PVCC  
VIN  
GND  
C
L
IN  
SVI DATA  
SVI CLOCK  
ENABLE  
SVD  
SVC  
EN  
UGATE0  
BOOT0  
PHASE0  
LGATE0  
OUT  
PWROK  
PWROK  
PGOOD  
VDDPWRGD  
CORE  
LOAD  
PGND0  
ISP0  
VSEN0  
RTN0  
REMOTE  
SENSE  
ISN0  
REMOTE  
SENSE  
VSEN1  
RTN1  
VDD_PLANE_STRAP  
RBIAS  
OCSET  
VDD0  
OFS/VFIXEN  
VDIFF0  
+VIN  
C
IN  
UGATE1  
BOOT1  
FB0  
L
OUT  
ISL6265  
COMP0  
PHASE1  
LGATE1  
CORE  
LOAD  
PGND1  
ISP1  
VW0  
VDIFF1  
OPEN  
ISN1  
+VIN  
OPEN  
OPEN  
FB1  
C
IN  
COMP1  
UGATE_NB  
BOOT_NB  
PHASE_NB  
LGATE_NB  
PGND_NB  
L
OUT  
VDDNB  
OPEN VW1  
FSET_NB  
NB  
LOAD  
OCSET_NB  
VSEN_NB  
RTN_NB  
COMP_NB  
FB_NB  
FIGURE 3. ISL6265 BASED UNIPLANE AND NORTHBRIDGE CONVERTERS WITH INDUCTOR DCR CURRENT SENSING  
FN6599.1  
May 13, 2009  
4
ISL6265  
Simplified Application Circuit for Dual Layout  
+5V  
+VIN  
VCC PVCC  
VIN  
GND  
C
L
IN  
SVI DATA  
SVI CLOCK  
ENABLE  
SVD  
UGATE0  
SVC  
EN  
BOOT0  
PHASE0  
LGATE0  
OUT  
PWROK  
PWROK  
PGOOD  
VDD0  
VDDPWRGD  
CORE  
LOAD  
PGND0  
ISP0  
VSEN0  
RTN0  
REMOTE  
SENSE  
VDD_PLANE_STRAP  
ISN0  
DNP DUAL PLANE  
RTN1  
REMOTE  
SENSE  
DNP UNIPLANE  
VSEN1  
RBIAS  
DNP  
UNIPLANE  
VDD0  
DUAL  
PLANE  
OCSET  
OFS/VFIXEN  
VDIFF0  
+VIN  
C
IN  
UGATE1  
BOOT1  
FB0  
L
OUT  
ISL6265  
COMP0  
PHASE1  
LGATE1  
VDD1  
CORE  
LOAD  
PGND1  
ISP1  
VW0  
VDIFF1  
ISN1  
+VIN  
FB1  
C
IN  
COMP1  
UGATE_NB  
BOOT_NB  
PHASE_NB  
LGATE_NB  
PGND_NB  
L
OUT  
VDDNB  
VW1  
FSET_NB  
NB  
LOAD  
OCSET_NB  
VSEN_NB  
RTN_NB  
COMP_NB  
FB_NB  
FIGURE 4. ISL6265 BASED UNIPLANE OR DUAL PLANE CORE CONVERTER WITH INDUCTOR DCR CURRENT SENSING  
FN6599.1  
May 13, 2009  
5
ISL6265  
Absolute Maximum Ratings  
Thermal Information  
Supply Voltage, VCC, PVCC . . . . . . . . . . . . . . . . . . . . . . .-0.3 - +7V  
Battery Voltage, VIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28V  
Boot Voltage (BOOT) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +33V  
Boot to Phase Voltage (BOOT-PHASE). . . . . . . . -0.3V to +7V(DC)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +9V (<10ns)  
Phase Voltage (PHASE) . . . . . . . . . -7V (<20ns Pulse Width, 10µJ)  
UGATE Voltage (UGATE) . . . . . . . . . PHASE -0.3V (DC) to BOOT  
LGATE Voltage (LGATE) . . . . . . . . . . . . . -0.3V (DC) to VCC + 0.3V  
ALL Other Pins. . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (VCC + 0.3V)  
Open Drain Outputs, PGOOD . . . . . . . . . . . . . . . . . . . . . -0.3 - +7V  
Thermal Resistance (Typical, Notes 1, 2)  
TQFN Package . . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C  
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C  
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
θ
JA (°C/W)  
30  
θ
JC (°C/W)  
1.5  
Recommended Operating Conditions  
Supply Voltage, VCC, PVCC . . . . . . . . . . . . . . . . . . . . . . . .+5V ±5%  
Battery Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6V to 24V  
Ambient Temperature . . . . . . . . . . . . . . . . . . . . . . .-10°C to +100°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .-10°C to +125°C  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and  
result in failures not covered by warranty.  
NOTES:  
1. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech  
Brief TB379.  
2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.  
Electrical Specifications VCC = PVCC = 5V, VIN = 12V, TA = -10°C to +100°C; Parameters with MIN and/or MAX limits are 100% tested  
at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production  
tested.  
PARAMETER  
INPUT POWER SUPPLY  
+5V Supply Current  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
IVCC  
EN = 3.3V  
EN = 0V  
-
-
7.8  
-
10  
1
mA  
µA  
V
POR (Power-On Reset) Threshold  
VCC PORr VCC Rising  
VCC PORf VCC Falling  
-
4.35  
4.1  
4.5  
-
3.9  
V
Battery Supply Current (VIN)  
SYSTEM AND REFERENCES  
System Accuracy  
IVIN  
EN = 0V, VIN = 24V  
-
-
1
µA  
%Error  
(VCORE  
No load, closed loop, active mode VID = 0.75V to 1.55V -0.5  
-
0.5  
+5  
%
mV  
V
(Vcore0, Vcore1, Vcore_NB  
)
)
VID = 0.50V to 0.7375V  
RRBIAS = 117kΩ  
-5  
1.15  
-
-
RBIAS Voltage  
RRBIAS  
1.17  
1.55  
1.19  
-
Maximum Output Voltage (Note 3)  
Minimum Output Voltage (Note 3)  
VCOREx  
(max)  
SVID = [000_0000b]  
V
VCOREx  
(min)  
SVID = [101_0100b]  
-
0.500  
-
V
CHANNEL FREQUENCY  
Nominal CORE Switching Frequency  
fSW_core0  
VIN = 15.5V, VDAC = 1.55V, VFB0 = 1.60V,  
force Vcomp_0 = 2V, RVW = 6.81kΩ, 2-Phase Operation  
285  
285  
300  
300  
315  
315  
kHz  
kHz  
Nominal NB Switching Frequency  
fSW_core_NB RFSET_NB = 22.1kΩ, CFSET_NB = 1nF, VDAC = 0.5V,  
sen_nb = 0.51V  
V
Core Frequency Adjustment Range  
NB Frequency Adjustment Range  
AMPLIFIERS (Note 3)  
200  
200  
-
-
500  
500  
kHz  
kHz  
Error Amp DC Gain  
AV0  
GBW  
SR  
-
-
-
90  
18  
-
-
-
dB  
Error Amp Gain-Bandwidth Product  
Error Amp Slew Rate  
CL = 20pF  
CL = 20pF  
MHz  
V/µs  
5.0  
FN6599.1  
May 13, 2009  
6
ISL6265  
Electrical Specifications VCC = PVCC = 5V, VIN = 12V, TA = -10°C to +100°C; Parameters with MIN and/or MAX limits are 100% tested  
at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production  
tested. (Continued)  
PARAMETER  
CORE CURRENT SENSE (Note 3)  
Current Imbalance Threshold  
Input Bias Current  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Di  
-
-
-
4
-
-
-
mV  
nA  
V
20  
0.8  
RTN1 Threshold  
SOFT START/VID-ON-THE-FLY  
Soft-Start Voltage Transition  
VID on the Fly Transition  
VSS  
1.25 1.875 2.50 mV/µs  
5
7.5  
10  
mV/µs  
GATE DRIVER DRIVING CAPABILITY [CORE AND NB]  
UGATE Source Resistance (Note 4)  
UGATE Source Current (Note 4)  
UGATE Sink Resistance (Note 4)  
UGATE Sink Current (Note 4)  
RSRC(UGATE) 500mA Source Current  
ISRC(UGATE) VUGATE_PHASE = 2.5V  
RSNK(UGATE) 500mA Sink Current  
ISNK(UGATE) VUGATE_PHASE = 2.5V  
RSRC(LGATE) 500mA Source Current  
ISRC(LGATE) VLGATE = 2.5V  
-
-
-
-
-
-
-
-
-
1
2
1.5  
Ω
A
-
1.5  
-
1
Ω
A
2
LGATE Source Resistance (Note 4)  
LGATE Source Current (Note 4)  
LGATE Sink Resistance (Note 4)  
LGATE Sink Current (Note 4)  
1
1.5  
-
Ω
A
2
RSNK(LGATE) 500mA Sink Current  
ISNK(LGATE) VLGATE = 2.5V  
0.5  
4
0.9  
-
Ω
A
UGATE to PHASE Resistance (Note 3)  
Rp(UGATE)  
1
-
kΩ  
GATE DRIVER SWITCHING TIMING (Note 3) (Refer to “ISL6265 Gate Driver Timing Diagram” on page 8)  
UGATE Rise Time  
tRU  
tRL  
PVCC = 5V, 3nF Load  
-
-
-
-
-
-
8.0  
8.0  
8.0  
4.0  
36  
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
LGATE Rise Time  
PVCC = 5V, 3nF Load  
UGATE Fall Time  
tFU  
PVCC = 5V, 3nF Load  
LGATE Fall Time  
tFL  
PVCC = 5V, 3nF Load  
UGATE Turn-on Propagation Delay  
LGATE Turn-on Propagation Delay  
BOOTSTRAP DIODE  
Forward Voltage  
tPDHU  
tPDHL  
PVCC = 5V, Outputs Unloaded  
PVCC = 5V, Outputs Unloaded  
20  
V
V
DDP = 5V, Forward Bias Current = 2mA  
R = 16V  
0.43  
-
0.58  
-
0.67  
1
V
Leakage  
µA  
POWER GOOD AND PROTECTION MONITOR  
PGOOD Low Voltage  
VOL  
IPGOOD = 4mA  
-
0.2  
-
0.5  
1
V
µA  
µs  
µs  
mV  
V
PGOOD Leakage Current  
PGOOD High After Soft-Start  
PGOOD Low After Fault  
Undervoltage Threshold  
Overvoltage Threshold  
IOH  
PGOOD = 5V  
-1  
Enable to PGOOD High, VCOREx = 1.1V  
Fault to PGOOD Low  
570  
160  
240  
700  
208  
295  
1010  
250  
350  
UVH  
VCOREx falls below set-point for 208μs  
VO rising above threshold > 0.5µs  
OVHS  
1.770 1.795 1.820  
OVERCURRENT PROTECTION VDD0 AND VDD1  
OCSET Reference Voltage  
VOCSET = 180mV; VIN = 15.5V  
5
6.0  
10  
7
mV  
(VISPx - VISNx  
)
OVERCURRENT PROTECTION VDD_NB  
OCSET_NB OCP Current  
RBIAS pin to GND = 117kΩ; Trips after 8 PWM cycles  
9.2  
10.8  
µA  
FN6599.1  
May 13, 2009  
7
ISL6265  
Electrical Specifications VCC = PVCC = 5V, VIN = 12V, TA = -10°C to +100°C; Parameters with MIN and/or MAX limits are 100% tested  
at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production  
tested. (Continued)  
PARAMETER  
OFFSET FUNCTION  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
OFS Pin Voltage For Droop Enabling  
FB Pin Source Current  
VOFS  
IFB  
ROFS = 240kΩ (OFS pin to GND)  
1.18  
9.0  
-
1.2  
9.9  
1.8  
1.22  
10.8  
-
V
µA  
V
IOFS = 10µA  
OFS Pin Voltage Threshold for VFIX  
Mode and No Droop Operation (Note 3)  
VOFS  
OFS Pin Voltage Threshold for SVI Mode  
and No Droop Operation (Note 3)  
VOFS  
-
-
4.0  
4.0  
-
-
V
OFS Bias (Note 3)  
IOFS  
1.8V < OFS < VCC  
µA  
LOGIC INPUTS  
ENABLE Low Threshold  
ENABLE High Threshold  
ENABLE Leakage Current  
VIL(3.3V)  
VIH(3.3V)  
-
2.0  
-1  
-
1.35  
1.6  
0
0.9  
V
V
-
-
Logic input is low  
µA  
µA  
Logic input is high at 3.3V  
0
1
SVI INTERFACE  
PWROK Input Low Threshold  
PWROK Input High Threshold (Note 3)  
SVC, SVD Input HIGH (VIH)  
SVC, SVD Input LOW (VIL)  
-
0.65  
0.9  
0.8  
V
V
-
-
1.05  
0.87  
0.68  
0.19  
0.1  
-
V
-
-
-
-
-
0.45  
V
Schmitt Trigger Input Hysteresis (Note 3)  
SVD Low Level Output Voltage  
SVC, SVD Leakage (Note 3)  
-
V
3mA Sink Current  
0.285  
V
EN = 0V, SVC, SVD = 0V  
EN = 5V, SVC, SVD = 1.8V  
< -100  
< -100  
-
-
nA  
nA  
DIFF AMP  
Accuracy  
NOTES:  
VSEN = 0.5V to 1.55V; RTN = 0 ±0.1V  
-2  
-
2
mV  
3. Limits should be considered typical and are not production tested.  
4. Limits established by characterization and are not production tested.  
ISL6265 Gate Driver Timing Diagram  
PWM  
t
PDHU  
t
FU  
t
RU  
1V  
UGATE  
LGATE  
1V  
t
t
FL  
RL  
t
PDHL  
FN6599.1  
May 13, 2009  
8
ISL6265  
PWROK  
Functional Pin Description  
System power good input. When this pin is high, the SVI  
interface is active and I2C protocol is running. While this pin  
is low, the SVC, SVD, and VFIXEN input states determine  
the pre-PWROK metal VID or VFIX mode voltage. This pin  
must be low prior to the ISL6265 PGOOD output going high  
per the AMD SVI Controller Guidelines.  
48 47 46 45 44 43 42 41 40 39 38 37  
OFS/VFIXEN  
PGOOD  
PWROK  
SVD  
BOOT_NB  
BOOT_0  
1
2
36  
35  
34  
33  
UGATE_0  
PHASE_0  
3
PGOOD  
4
Controller power-good open-drain output. This pin is  
typically pulled up externally by a 2.0kΩ resistor to +3.3V.  
During normal operation, this pin indicates whether all output  
voltages are within specified overvoltage and undervoltage  
limits and no overcurrent condition is present. If any output  
voltage exceeds these limits or a reset event occurs, the pin  
is pulled low. This pin is always low prior to the end of  
soft-start.  
SVC  
5
32 PGND_0  
ENABLE  
RBIAS  
OCSET  
VDIFF_0  
FB_0  
LGATE_0  
PVCC  
6
49  
GND  
31  
30  
29  
28  
27  
26  
25  
7
LGATE_1  
PGND_1  
PHASE_1  
UGATE_1  
BOOT_1  
8
9
10  
11  
12  
COMP_0  
VW0  
SVC  
13 14 15 16 17 18 19 20 21 22 23 24  
This pin is the serial VID clock input from the AMD  
processor.  
SVD  
VCC  
This pin is the serial VID data bidirectional signal to and from  
the master device on the AMD processor.  
The bias supply for the IC’s control circuitry. Connect this pin  
to a +5V supply and decouple using a quality 0.1µF ceramic  
capacitor.  
ENABLE  
Digital input enable. A high level logic signal on this pin  
enables the ISL6265.  
VIN  
Battery supply voltage. It is used for input voltage feed-forward  
to improve the input line transient performance.  
FSET_NB  
A resistor from this pin to GND programs the switching  
frequency of the Northbridge controller (for example,  
22.1k ~ 260kHz).  
PVCC  
The power supply pin for the internal MOSFET gate drivers  
of the ISL6265. Connect this pin to a +5V power supply.  
Decouple this pin with a quality 1.0µF ceramic capacitor.  
FB_NB  
This pin is the output voltage feedback to the inverting input  
of the Northbridge controller error amplifier.  
GND  
The bias and reference ground for the IC. The GND  
connection for the ISL6265 is through the thermal pad on the  
bottom of the package.  
COMP_NB  
This pin is the output of the Northbridge controller error  
amplifier.  
RBIAS  
VSEN_NB, RTN_NB  
A 117kΩ resistor from RBIAS to GND sets internal reference  
currents. The addition of capacitance to this pin must be  
avoided and can create instabilities in operation.  
Remote Northbridge voltage sense input and return.  
Connect isolated traces from these pins to the Northbridge  
sense points of the processor.  
OFS/VFIXEN  
OCSET_NB  
A resistor from this pin to GND programs a DC current  
source, which generates a positive offset voltage across the  
resistor between FB and VDIFF pins. In this case, the OFS  
pin voltage is +1.2V and VFIX mode is not enabled. If OFS is  
pulled up to +3.3V, VFIX mode is enabled, the DAC decodes  
the SVC and SVD inputs to determine the programmed  
voltage, and the OFS function is disabled. If OFS is pulled up  
to +5V, the OFS function and VFIX mode are disabled.  
Overcurrent protection selection input for the Northbridge  
controller. A resistor from this pin to PHASE_NB sets the OC  
trip point.  
UGATE_NB  
Upper MOSFET gate signal from Northbridge controller.  
LGATE_NB  
Lower MOSFET gate signal from Northbridge controller.  
FN6599.1  
May 13, 2009  
9
ISL6265  
Connect ISN0 and ISN1 to the node between the RC sense  
PHASE_NB  
elements surrounding the inductor of their respective  
channel. Tie the ISP0 and ISP1 pins to the VCORE side of  
their corresponding channel’s sense capacitor. These pins  
can also be used for discrete resistor sensing.  
Switch node of the Northbridge controller. This pin should  
connect to the source of the Northbridge channel upper  
MOSFET(s).  
BOOT_NB  
BOOT0, BOOT1  
This pin is the upper gate drive supply voltage for the  
Northbridge controller. Connect an appropriately sized  
ceramic bootstrap capacitor between the BOOT_NB and  
PHASE_NB pins. An internal bootstrap diode connected to  
the PVCC pin provides the necessary bootstrap charge.  
These pins provide the bias voltage for the corresponding  
upper MOSFET drives. Connect these pins to appropriately  
chosen external bootstrap capacitors. Internal bootstrap  
diodes connected to the PVCC pin provide the necessary  
bootstrap charge.  
PGND_NB  
UGATE0, UGATE1  
The return path of the Northbridge controller lower gate  
driver. Connect this pin to the source of the lower  
MOSFET(s).  
Connect these pins to the corresponding upper MOSFET  
gate(s). These pins control the upper MOSFET gate(s) and  
are monitored for shoot-through prevention.  
OCSET  
LGATE0, LGATE1  
CORE_0 and CORE_1 common overcurrent protection  
selection input. The voltage on this pin sets the (ISPx - ISNx)  
voltage limit for OC trip.  
Connect these pins to the corresponding lower MOSFET  
gate(s).  
PHASE0, PHASE1  
VW0, VW1  
Switch node of the CORE_0 and CORE_1 controllers.  
Connect these pins to the sources of the corresponding  
upper MOSFET(s). These pins are the return path for the  
upper MOSFET drives.  
A resistor from this pin to corresponding COMPx pin  
programs the switching frequency (for example, 6.81k ~  
300kHz).  
COMP0, COMP1  
PGND0, PGND1  
The output of the CORE_0 and CORE_1 controller error  
amplifiers respectively. FBx, VDIFFx, and COMPx pins are  
tied together through external R-C networks to compensate  
the regulator.  
The return path of the lower gate driver for CORE_0 and  
CORE_1 respectively. Connect these pins to the  
corresponding sources of the lower MOSFETs.  
FB0, FB1  
Theory of Operation  
These pins are the output voltage feedback to the inverting  
input of the CORE_0 and CORE_1 error amplifiers.  
The ISL6265 is a flexible multi-output controller supporting  
Northbridge and single or dual power planes required by  
Class M AMD Mobile CPUs. In dual plane applications, both  
core voltage regulators operate single-phase. In uniplane  
core applications, the core voltage regulators are configured  
to operate as a two-phase regulator. All three regulator  
outputs include integrated gate drivers for reduced system  
cost and small board area. The regulators provide optimum  
steady-state and transient performance for microprocessor  
applications. System efficiency is enhanced by idling a  
phase in uniplane configurations at low-current and  
implementing automatic DCM-mode operation when PSI_L  
is asserted to logic low.  
VDIFF0, VDIFF1  
Output of the CORE_0 and CORE_1 differential amplifiers.  
VSEN0, RTN0  
Inputs to the CORE_0 VR controller precision differential  
remote sense amplifier. Connect to the sense pins of the  
VDD0_FB[H,L] portion of the processor.  
VSEN1, RTN1  
Inputs to the CORE_1 VR controller precision differential  
remote sense amplifier. Connect to the sense pins of the  
VDD1_FB[H,L] portion of the processor. The RTN1 pin is  
also used for detection of the VDD_PLANE_STRAP signal  
prior to enable.  
The heart of the ISL6265 is the R3 Technology™, Intersil's  
Robust Ripple Regulator modulator. The R3 modulator  
combines the best features of fixed frequency PWM and  
hysteretic PWM while eliminating many of their  
ISP0, ISN0, ISP1, ISN1  
shortcomings. The ISL6265 modulator internally synthesizes  
an analog of the inductor ripple current and uses hysteretic  
comparators on those signals to establish PWM pulse  
widths. Operating on these large-amplitude, noise-free  
synthesized signals allows the ISL6265 to achieve lower  
These pins are used for differentially sensing the  
corresponding channel output current. The sensed current is  
used for channel balancing, protection, and core load line  
regulation.  
FN6599.1  
May 13, 2009  
10  
ISL6265  
.
output ripple and lower phase jitter than either conventional  
hysteretic or fixed frequency PWM controllers. Unlike  
VIN  
conventional hysteretic converters, the ISL6265 has an error  
amplifier that allows the controller to maintain a 0.5% voltage  
regulation accuracy throughout the VID range from 0.75V to  
1.55V. Voltage regulation accuracy is slightly wider, ±5mV,  
over the VID range from 0.7375V to 0.5V.  
PWM FREQUENCY  
FSET  
CONTROL  
-
+
g
+
V
-
V
m
IN  
W
-
+
R
Q
S
PWM  
V
VO  
R
-
The hysteresis window voltage is relative to the error  
amplifier output such that load current transients result in  
increased switching frequency, which gives the R3 regulator  
a faster response than conventional fixed frequency PWM  
controllers. In uniplane configurations, transient load current  
is inherently shared between active phases due to the use of  
a common hysteretic window voltage. Individual average  
phase currents are monitored and controlled to equally  
share current among the active phases.  
+
g
-
V
O
m
V
COMP  
+
-
+
C
R
TO  
PWM  
CONTROL  
ISL6265  
FIGURE 5. MODULATOR CIRCUITRY  
RIPPLE CAPACITOR VOLTAGE C  
WINDOW VOLTAGE V  
W
Modulator  
R
The ISL6265 modulator features Intersil’s R3 technology, a  
hybrid of fixed frequency PWM control and variable  
frequency hysteretic control (see Figure 5). Intersil’s R3  
technology can simultaneously affect the PWM switching  
frequency and PWM duty cycle in response to input voltage  
and output load transients. The R3 modulator synthesizes an  
AC signal VR, which is an analog representation of the  
output inductor ripple current. The duty-cycle of VR is the  
result of charge and discharge current through a ripple  
capacitor CR. The current through CR is provided by a  
transconductance amplifier gm that measures the VIN and  
VO voltages. The positive slope of VR can be written as  
determined by Equation 1:  
ERROR AMPLIFIER VOLTAGE V  
COMP  
PWM  
FIGURE 6. MODULATOR WAVEFORMS DURING LOAD  
TRANSIENT  
(EQ. 1)  
V
= (g ) ⋅ (V V  
)
OUT  
RPOS  
m
IN  
Initialization  
The negative slope of VR can be written as determined by  
Equation 2:  
Once sufficient bias is applied to the VCC pin, internal logic  
checks the status of critical pins to determine the controller  
operation profile prior to ENABLE. These pins include RTN1  
which determines single vs two-phase operation and  
(EQ. 2)  
V
= g V  
m OUT  
RNEG  
Where gm is the gain of the transconductance amplifier.  
OFS/VFIXEN for enabling/disabling the SVI interface and core  
voltage droop. Depending on the configuration set by these  
pins, the controller then checks the state of the SVC and SVD  
pins to determine the soft-start target output voltage level.  
A window voltage VW is referenced with respect to the error  
amplifier output voltage VCOMP, creating an envelope into  
which the ripple voltage VR is compared. The amplitude of  
V
W is set by a resistor connected across the FSET and GND  
Power-On Reset  
pins. The VR, VCOMP, and VW signals feed into a window  
comparator in which VCOMP is the lower threshold voltage  
and VW is the higher threshold voltage. Figure 6 shows  
PWM pulses being generated as VR traverses the VW and  
The ISL6265 requires a +5V input supply tied to VCC and  
PVCC to exceed a rising power-on reset (POR) threshold  
before the controller has sufficient bias to guarantee proper  
operation. Once this threshold is reached or exceeded, the  
ISL6265 has enough bias to begin checking RTN1,  
OFS/VFIXEN, ENABLE, and SVI inputs. Hysteresis between  
the rising the falling thresholds assure the ISL6265 will not  
inadvertently turn-off unless the bias voltage drops  
VCOMP thresholds. The PWM switching frequency is  
proportional to the slew rates of the positive and negative  
slopes of VR; it is inversely proportional to the voltage  
between VW and VCOMP  
.
substantially (see “Electrical Specifications” on page 8).  
Core Configuration  
The ISL6265 determines the core channel requirements of  
the CPU based on the state of the RTN1 pin prior to  
FN6599.1  
May 13, 2009  
11  
ISL6265  
ENABLE. If RTN1 is low prior to ENABLE, both VDD0 and  
to set the core voltage positive offset. Further information is  
provided in “Offset Resistor Selection” on page 17.  
VDD1 core planes are required. The core controllers operate  
as independent single-phase regulators. RTN1 is connected  
to the CPU Core1 negative sense point. For single core CPU  
designs (uniplane), RTN1 is tied to a +1.8V or greater supply  
through a 1kΩ resistor and the connection between RTN1  
and CPU Core1 negative sense must be open. Prior to  
ENABLE, RTN1 is detected as HIGH and the ISL6265 drives  
the core controllers as a two-phase multi-phase regulator.  
Dual purpose motherboard designs should include resistor  
options to open the CPU Core1 negative sense and connect  
the RTN1 pin to a pull-up resistor.  
Serial VID Interface  
The on-board Serial VID Interface (SVI) circuitry allows the  
processor to directly control the Core and Northbridge  
voltage reference levels within the ISL6265. The SVC and  
SVD states are decoded according to the PWROK and  
VFIXEN inputs as described in the following sections. The  
ISL6265 uses a digital-to-analog converter (DAC) to  
generate a reference voltage based on the decoded SVI  
value. See Figure 7 for a simple SVI interface timing  
diagram.  
Mode Selection  
Pre-PWROK Metal VID  
The OFS/VFIXEN pin selects between the AMD defined  
VFIX and SVI modes of operation and enables droop if  
desired in SVI mode only. If OFS/VFIXEN is tied to VCC,  
then SVI mode with no droop on the core output(s) is  
selected. Connected to +3.3V, VFIX mode is active with no  
droop on the core output(s). SVI mode with droop is enabled  
when OFS/VFIXEN is tied to ground through a resistor sized  
Assuming the OFS/VFIXEN pin is not tied to +3.3V during  
controller configuration, typical motherboard start-up begins  
with the controller decoding the SVC and SVD inputs to  
determine the pre-PWROK metal VID setting (see Table 1).  
Once the enable input (EN) exceeds the rising enable  
1
4
5
6
2
3
7
8
9
10  
11  
12  
VCC  
SVC  
SVD  
ENABLE  
PWROK  
V_SVI  
V_SVI  
METAL_VID  
METAL_VID  
VDD AND VDDNB  
VDDPWRGD  
(PGOOD)  
FIXEN  
Interval 1 to 2: ISL6265 waits to POR.  
Interval 2 to 3: SVC and SVD are externally set to pre-Metal VID code.  
Interval 3 to 4: EN locks core output configuration and pre-Metal VID code. All outputs soft-start to this level.  
Interval 4 to 5: PGOOD signal goes HIGH indicating proper operation.  
Interval 5 to 6: CPU detects VDDPWRGD high and drives PWROK high to allow ISL6265 to prepare for SVI code.  
Interval 6 to 7: SVC and SVD data lines communicate change in VID code.  
Interval 7 to 8: ISL6265 responds to VID-ON-THE-FLY code change.  
Interval 8 to 9: PWROK is driven low and ISL6265 returns all outputs to pre-PWROK Metal VID level.  
Interval 9 to 10: PWROK driven high once again by CPU and ISL6265 prepares for SVI code.  
Interval 10 to 11: SVC and SVD data lines communicate new VID code.  
Interval 11 to 12: ISL6265 drives outputs to new VID code level.  
Post 12: Enable falls and all internal drivers are tri-stated and PGOOD is driven low.  
FIGURE 7. SVI INTERFACE TIMING DIAGRAM: TYPICAL PRE-PWROK METAL VID STARTUP  
FN6599.1  
May 13, 2009  
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ISL6265  
threshold, the ISL6265 decodes and locks the decoded  
value in an on-board hold register.  
SVI MODE  
Once the controller has successfully soft-started and  
PGOOD transitions high, the processor can assert PWROK  
to signal the ISL6265 to prepare for SVI commands. The  
controller actively monitors the SVI interface for set VID  
commands to move the plane voltages to start-up VID  
values. Details of the SVI Bus protocol are provided in the  
AMD Design Guide for Voltage Regulator Controllers  
Accepting Serial VID Codes specification.  
TABLE 1. PRE-PWROK METAL VID CODES  
SVC  
SVD  
OUTPUT VOLTAGE (V)  
0
0
1
1
0
1
0
1
1.1  
1.0  
0.9  
0.8  
Once a set VID command is received, the ISL6265 decodes  
the information to determine which output plane is affected  
and the VID target required (see Table 3).The internal DAC  
circuitry steps the required output plane voltage to the new  
VID level. During this time, one or more of the planes could  
be targeted. In the event either core voltage plane, VDD0 or  
VDD1, is commanded to power-off by serial VID commands,  
the PGOOD signal remains asserted. The Northbridge  
voltage plane must remain active during this time.  
The internal DAC circuitry begins to ramp Core and  
Northbridge planes to the decoded pre-PWROK metal VID  
output level. The digital soft-start circuitry ramps the internal  
reference to the target gradually at a fixed rate of  
approximately 2mV/µs. The controlled ramp of all output  
voltage planes reduces in-rush current during the soft-start  
interval. At the end of the soft-start interval, the PGOOD  
output transitions high indicating all output planes are within  
regulation limits.  
If the PWROK input is de-asserted, then the controller steps  
both Core and Northbridge planes back to the stored  
pre-PWROK metal VID level in the holding register from  
initial soft-start. No attempt is made to read the SVC and  
SVD inputs during this time. If PWROK is reasserted, then  
the on-board SVI interface waits for a set VID command.  
If the EN input falls below the enable falling threshold, the  
ISL6265 tri-states all outputs. PGOOD is pulled low with the  
loss of EN. The Core and Northbridge planes will decay  
based on output capacitance and load leakage resistance. If  
bias to VCC falls below the POR level, the ISL6265  
responds in the same manner previously described. Once  
VCC and EN rise above their respective rising thresholds,  
the internal DAC circuitry re-acquires a pre-PWROK metal  
VID code and the controller soft-starts.  
If EN goes low during normal operation, all internal drivers  
are tri-stated and PGOOD is pulled low. This event clears  
the pre-PWROK metal VID code and forces the controller to  
check SVC and SVD upon restart.  
VFIX MODE  
A POR event on VCC during normal operation will shutdown  
all regulators and PGOOD is pulled low. The pre-PWROK  
metal VID code is not retained.  
In VFIX Mode, the SVC and SVD levels fixed external to the  
controller through jumpers to either GND or VDDIO. These  
inputs are not expected to change. In VFIX mode, the IC  
decodes the SVC and SVD states per Table 2.  
VID-on-the-Fly Transition  
Once PWROK is high, the ISL6265 detects this flag and  
begins monitoring the SVC and SVD pins for SVI  
instructions. The microprocessor will follow the protocol  
outlined in the following sections to send instructions for  
VID-on-the-Fly transitions. The ISL6265 decodes the  
instruction and acknowledges the new VID code. For VID  
codes higher than the current VID level, the ISL6265 begins  
stepping the required regulator output(s) to the new VID  
target with a typical slew rate of 7.5mV/µs, which meets the  
AMD requirements.  
TABLE 2. VFIXEN VID CODES  
SVC  
SVD  
OUTPUT VOLTAGE (V)  
0
0
1
1
0
1
0
1
1.4  
1.2  
1.0  
0.8  
Once enabled, the ISL6265 begins to soft-start both Core  
and Northbridge planes to the programmed VFIX level. The  
internal soft-start circuitry slowly ramps the reference up to  
the target value. The same fixed internal rate of  
approximately 2mV/µs results in a controlled ramp of the  
power planes. Once soft-start has ended and all output  
planes are within regulation limits, the PGOOD pin  
transitions high.  
When the VID codes are lower than the current VID level,  
the ISL6265 begins stepping the regulator output to the new  
VID target with a typical slew rate of -7.5mV/µs. Both Core  
and NB regulators are always in CCM during a down VID  
transition. The AMD requirements under these conditions do  
not require the regulator to meet the minimum slew rate  
specification of -5mV/µs. In either case, the slew rate is not  
allowed to exceed 10mV/µs. The ISL6265 does not change  
the state of PGOOD (VDDPWRGD in AMD specifications)  
when a VID-on-the-fly transition occurs.  
In the same manner described in “Pre-PWROK Metal VID”  
on page 12, the POR circuitry impacts the internal driver  
operation and PGOOD status.  
FN6599.1  
May 13, 2009  
13  
ISL6265  
during a transaction. The AMD processor is always the  
SVI WIRE Protocol  
master and the voltage regulators are the slaves. The slave  
receives the SVI transactions and acts accordingly. Mobile  
SVI wire protocol timing is based on high-speed mode I2C.  
See AMD Griffin (Family 11h) processor publications for  
additional details.  
The SVI wire protocol is based on the I2C bus concept. Two  
wires (serial clock (SVC) and serial data (SVD)), carry  
information between the AMD processor (master) and VR  
controller (slave) on the bus. The master initiates and  
terminates SVI transactions and drives the clock, SVC,  
TABLE 3. SERIAL VID CODES  
SVID[6:0]  
000_0000b  
000_0001b  
000_0010b  
000_0011b  
000_0100b  
000_0101b  
000_0110b  
000_0111b  
000_1000b  
000_1001b  
000_1010b  
000_1011b  
000_1100b  
000_1101b  
000_1110b  
000_1111b  
001_0000b  
001_0001b  
001_0010b  
001_0011b  
001_0100b  
001_0101b  
001_0110b  
001_0111b  
001_1000b  
001_1001b  
001_1010b  
001_1011b  
001_1100b  
001_1101b  
001_1110b  
001_1111b  
VOLTAGE (V)  
1.5500  
1.5375  
1.5250  
1.5125  
1.5000  
1.4875  
1.4750  
1.4625  
1.4500  
1.4375  
1.4250  
1.4125  
1.4000  
1.3875  
1.3750  
1.3625  
1.3500  
1.3375  
1.3250  
1.3125  
1.3000  
1.2875  
1.2750  
1.2625  
1.2500  
1.2375  
1.2250  
1.2125  
1.2000  
1.1875  
1.1750  
1.1625  
SVID[6:0]  
010_0000b  
010_0001b  
010_0010b  
010_0011b  
010_0100b  
010_0101b  
010_0110b  
010_0111b  
010_1000b  
010_1001b  
010_1010b  
010_1011b  
010_1100b  
010_1101b  
010_1110b  
010_1111b  
011_0000b  
011_0001b  
011_0010b  
011_0011b  
011_0100b  
011_0101b  
011_0110b  
011_0111b  
011_1000b  
011_1001b  
011_1010b  
011_1011b  
011_1100b  
011_1101b  
011_1110b  
011_1111b  
VOLTAGE (V)  
1.1500  
1.1375  
1.1250  
1.1125  
1.1000  
1.0875  
1.0750  
1.0625  
1.0500  
1.0375  
1.0250  
1.0125  
1.0000  
0.9875  
0.9750  
0.9625  
0.9500  
0.9375  
0.9250  
0.9125  
0.9000  
0.8875  
0.8750  
0.8625  
0.8500  
0.8375  
0.8250  
0.8125  
0.8000  
0.7875  
0.7750  
0.7625  
SVID[6:0]  
100_0000b  
100_0001b  
100_0010b  
100_0011b  
100_0100b  
100_0101b  
100_0110b  
100_0111b  
100_1000b  
100_1001b  
100_1010b  
100_1011b  
100_1100b  
100_1101b  
100_1110b  
100_1111b  
101_0000b  
101_0001b  
101_0010b  
101_0011b  
101_0100b  
101_0101b  
101_0110b  
101_0111b  
101_1000b  
101_1001b  
101_1010b  
101_1011b  
101_1100b  
101_1101b  
101_1110b  
101_1111b  
VOLTAGE (V)  
0.7500  
0.7375  
0.7250  
0.7125  
0.7000  
0.6875  
0.6750  
0.6625  
0.6500  
0.6375  
0.6250  
0.6125  
0.6000  
0.5875  
0.5750  
0.5625  
0.5500  
0.5375  
0.5250  
0.5125  
0.5000  
0.4875*  
0.4750*  
0.4625*  
0.4500*  
0.4375*  
0.4250*  
0.4125*  
0.4000*  
0.3875*  
0.3750*  
0.3625*  
SVID[6:0]  
110_0000b  
110_0001b  
110_0010b  
110_0011b  
110_0100b  
110_0101b  
110_0110b  
110_0111b  
110_1000b  
110_1001b  
110_1010b  
110_1011b  
110_1100b  
110_1101b  
110_1110b  
110_1111b  
111_0000b  
111_0001b  
111_0010b  
111_0011b  
111_0100b  
111_0101b  
111_0110b  
111_0111b  
111_1000b  
111_1001b  
111_1010b  
111_1011b  
111_1100b  
111_1101b  
111_1110b  
111_1111b  
VOLTAGE (V)  
0.3500*  
0.3375*  
0.3250*  
0.3125*  
0.3000*  
0.2875*  
0.2750*  
0.2625*  
0.2500*  
0.2375*  
0.2250*  
0.2125*  
0.2000*  
0.1875*  
0.1750*  
0.1625*  
0.1500*  
0.1375*  
0.1250*  
0.1125*  
0.1000*  
0.0875*  
0.0750*  
0.0625*  
0.0500*  
0.0375*  
0.0250*  
0.0125*  
OFF  
OFF  
OFF  
OFF  
NOTE: *Indicates a VID not required for AMD Family 10h processors.  
FN6599.1  
May 13, 2009  
14  
ISL6265  
(SEE TABLE 3)  
SVID  
6
5
4
3
2
1
0
7
5
4
3
2
1
0
6
SVC  
SVD  
SLAVE ADDRESS PHASE  
DATA PHASE  
FIGURE 8. SEND BYTE EXAMPLE  
SVI Bus Protocol  
Operation  
The AMD processor bus protocol is compliant with SMBus  
send byte protocol for VID transactions (see Figure 8).  
During a send byte transaction, the processor sends the  
start sequence followed by the slave address of the VR for  
which the VID command applies. The address byte must be  
configured according to Table 4. The processor then sends  
the write bit. After the write bit, if the ISL6265 receives a  
valid address byte, it sends the acknowledge bit. The  
processor then sends the PSI-L bit and VID bits during the  
data phase. The Serial VID 8-bit data field encoding is  
outlined in Table 5. If ISL6265 receives a valid 8-bit code  
during the data phase, it sends the acknowledge bit. Finally,  
the processor sends the stop sequence. After the ISL6265  
has detected the stop, it can then proceed with the VID-on-  
the-fly transition.  
After the start-up sequence, the ISL6265 begins regulating  
the core and Northbridge output voltages to the pre-PWROK  
metal VID programmed. The controller monitors SVI  
commands to determine when to enter power-savings mode,  
implement dynamic VID changes, and shutdown individual  
outputs.  
The ISL6265 controls the no-load output voltage of core and  
Northbridge output to an accuracy of ±0.5% over-the-range  
of 0.75V to 1.5V. A fully differential amplifier implements core  
voltage sensing for precise voltage control at the  
microprocessor die.  
Switching Frequency  
The R3 modulator scheme is a variable frequency PWM  
architecture. The switching frequency increases during the  
application of a load to improve transient performance. It  
also varies slightly due to changes in input and output  
voltage and output current. This variation is normally less  
than 10% in continuous conduction mode.  
TABLE 4. SVI SEND BYTE ADDRESS DESCRIPTION  
BITS  
DESCRIPTION  
6:4 Always 110b  
3
2
Reserved by AMD for future use  
CORE FREQUENCY SELECTION  
VDD1, if set then the following data byte contains the VID for  
VDD1  
A resistor connected between the VW and COMP pins of the  
Core segment of the ISL6265 adjusts the switching window  
and therefore adjusts the switching frequency. The RFSET  
resistor that sets up the switching frequency of the converter  
operating in CCM can be determined using Equation 3,  
where RFSET is in kΩ and the switching period is in µs.  
Designs for 300kHz switching frequency would result in a  
1
0
VDD0, if set then the following data byte contains the VID for  
VID0  
VDDNB, if set then the following data byte contains the VID  
for VIDNB  
R
FSET value of 6.81kΩ.  
TABLE 5. SERIAL VID 8-BIT DATA FIELD ENCODING  
DESCRIPTION  
R
(kΩ) = (Periods) 0.4) × 2.33  
(EQ. 3)  
BITS  
FSET  
7
PSI_L:  
In discontinuous conduction mode (DCM) the ISL6265 runs  
in period stretching mode.  
= 0 means the processor is at an optimal load for the  
regulator(s) to enter power-savings mode  
= 1 means the processor is not at an optimal load for the  
regulator(s) to enter power-saving mode  
NORTHBRIDGE FREQUENCY SELECTION  
The Northbridge switching frequency to programmed by a  
resistor connected from the FSET_NB pin to the GND pin.  
The approximate PWM switching frequency is written as  
shown in Equation 4:  
6:0 SVID[6:0] as defined in Table 3.  
1
(EQ. 4)  
-----------------------------------  
F
=
SW  
K R  
FSETNB  
FN6599.1  
May 13, 2009  
15  
ISL6265  
Estimating the value of RFSET_NB is written as shown in  
A simple R-C network across the inductor (R1, R2 and C)  
Equation 5:  
extracts the DCR voltage, as shown in Equation 7. The  
voltage across the sense capacitor, VC, can be shown to be  
proportional to the output current IL, shown in Equation 7.  
1
K F  
--------------------  
(EQ. 5)  
R
=
FSET  
SW  
s L  
-------------  
+ 1  
(EQ. 7)  
Where FSW is the PWM switching frequency, RFSET_NB is  
the programming resistor and K = 1.5 x 10-10  
DCR  
----------------------------------------------------------  
V
(s) =  
K DCR I  
C
L
.
(R R )  
1
2
-----------------------  
s ⋅  
C + 1  
1
R
+ R  
2
It is recommended that whenever the control loop  
compensation network is modified, the switching frequency  
should be checked and adjusted by changing RFSET_NB if  
necessary.  
1
Where  
R
2
--------------------  
K =  
(EQ. 8)  
R
+ R  
1
2
Current Sense  
Core and Northbridge regulators feature two different types  
of current sense circuits.  
Sensing the time varying inductor current accurately  
requires that the parallel R-C network time constant match  
the inductor L/DCR time constant. If the R-C network  
components are selected such that the R-C time constant  
matches the inductor L/DCR time constant (see Equation 9),  
then VC is equal to the voltage drop across the DCR  
multiplied by the ratio of the resistor divider, K.  
CORE CONTINUOUS CURRENT SENSE  
The ISL6265 provides for load current to be measured using  
either resistors in series with the individual output inductors  
or using the intrinsic series resistance of the inductors as  
shown in the applications circuits in Figures 2 and 3. The  
load current in a particular output is sampled continuously  
every switching cycle. During this time the current-sense  
amplifier uses the current sense inputs to reproduce a signal  
proportional to the inductor current. This sensed current is a  
scaled version of the inductor current.  
R
R  
2
L
1
-------------  
--------------------  
C  
=
(EQ. 9)  
1
DCR  
R + R  
1 2  
The inductor current sense information is used for current  
balance in dual plane applications, overcurrent detection in  
core outputs and output voltage droop depending on  
controller configuration.  
I
V
IN  
L
UGATE  
LGATE  
CORE DCR TEMPERATURE COMPENSATION  
L
DCR  
V
OUT  
MOSFET  
DRIVER  
It may also be necessary to compensate for changes in  
inductor DCR due to temperature. DCR shifts due to  
temperature cause time constant mismatch, skewing  
inductor current accuracy. Potential problems include output  
voltage droop and OC trip point, both shifting significantly  
from expected levels. The addition of a negative temperature  
coefficient (NTC) resistor to the R-C network compensates  
for the rise in DCR due to temperature. Typical NTC values  
are in the 10kΩ range. A second resistor, R3, in series with  
the NTC allows for more accurate time-constant and  
resistor-ratio matching as the pair of resistors are placed in  
parallel with R2 (Figure 9). The NTC resistor must be placed  
next to the inductor for good heat transfer, while R1, R2, R3,  
and C1 are placed close to the controller for interference  
immunity.  
INDUCTOR  
C
OUT  
-
V (s)  
L
-
V (s)  
C
R
C
1
1
R
2
ISL6265 INTERNAL CIRCUIT  
R
NTC  
OPTIONAL  
NTC  
NETWORK  
ISP  
ISN  
R
3
CURRENT  
SENSE  
FIGURE 9. DCR SENSING COMPONENTS  
CORE DCR COMPONENT SELECTION FOR DROOP  
Inductor windings have a characteristic distributed  
resistance or DCR (Direct Current Resistance). For  
simplicity, the inductor DCR is considered as a separate  
lumped quantity, as shown in Figure 9. The inductor current,  
IL, flowing through the inductor, passes through the DCR.  
Equation 6 shows the s-domain equivalent voltage, VL,  
across the inductor.  
By adjusting the ratio between inductor DCR drop and the  
voltage measured across the sense capacitor, the load line  
can be set to any level, giving the converter the correct  
amount of droop at all load currents.  
Equation 10 shows the relation between droop voltage,  
maximum output current (IMAX), OC trip level and current  
sense capacitor voltage at the OC current level, VC(OC)  
.
V (s) = I ⋅ (s L + DCR)  
(EQ. 6)  
L
L
I
MAX  
(EQ. 10)  
-------------  
V
=
5 V  
DROOP  
C, OC  
I
OC  
FN6599.1  
May 13, 2009  
16  
ISL6265  
AMD specifications do not require droop and provide no load  
Internal Driver Operation  
line guidelines. Tight static output voltage tolerance limits  
push acceptable level of droop below a useful level for Griffin  
applications. Care must be taken in applications which  
implement droop to balance time constant mismatch, sense  
capacitor resistor ratio, OC trip and droop equations.  
Temperature shifts related to DCR must also be addressed,  
as outlined in the previous section.  
The ISL6265 features three internal gate-drivers to support  
the Core and Northbridge regulators and to reduce solution  
size. The drivers include a diode emulation mode, which  
helps to improve light-load efficiency.  
MOSFET Gate-Drive Outputs  
The ISL6265 has internal gate-drivers for the high-side and  
low-side N-Channel MOSFETs. The low-side gate-drivers  
are optimized for low duty-cycle applications where the  
low-side MOSFET conduction losses are dominant,  
requiring a low rDS(ON) MOSFET. The LGATE pull-down  
resistance is low in order to strongly clamp the gate of the  
MOSFET below the VGS(th) at turn-off. The current transient  
through the gate at turn-off can be considerable because the  
gate charge of a low rDS(ON) MOSFET can be large.  
Adaptive shoot-through protection prevents a gate-driver  
output from turning on until the opposite gate-driver output  
has fallen below approximately 1V.  
NORTHBRIDGE CURRENT SENSE  
During the off-time following a PHASE transition low, the  
Northbridge controller samples the voltage across the lower  
MOSFET rDS(ON). A ground-referenced amplifier is  
connected to the PHASE node through a resistor,  
ROCSET_NB. The voltage across ROCSET_NB is equal to the  
voltage drop across the rDS(ON) of the lower MOSFET while  
it is conducting. The resulting current into the OCSET_NB  
pin is proportional to the inductor current. The sensed  
inductor current is used for overcurrent protection and  
described in the “Fault Monitoring and Protection” on  
page 18. The Northbridge controller does not support output  
voltage droop.  
The high-side gate-driver output voltage is measured across  
the UGATE and PHASE pins while the low-side gate-driver  
output voltage is measured across the LGATE and PGND  
pins. The power for the LGATE gate driver is sourced  
directly from the PVCC pin. The power for the UGATE  
gate-driver is sourced from a “boot” capacitor connected  
across the BOOT and PHASE pins. The boot capacitor is  
charged from a 5V bias supply through a “boot diode” each  
time the low-side MOSFET turns on, pulling the PHASE pin  
low. The ISL6265 has an integrated boot diode connected  
from the PVCC pin to the BOOT pin.  
Selecting RBIAS For Core Outputs  
To properly bias the ISL6265, a reference current is  
established by placing a 117kΩ, 1% tolerance resistor from  
the RBIAS pin to ground. This will provide a highly accurate,  
10µA current source from which OC reference current is  
derived.  
Care must be taken in layout to place the resistor very close  
to the RBIAS pin. A good quality signal ground should be  
connected to the opposite end of the RBIAS resistor. Do not  
connect any other components to this pin as this would  
negatively impact performance. Capacitance on this pin  
could create instabilities and is to be avoided.  
Diode Emulation  
The ISL6265 implements forced continuous-conduction-  
mode (CCM) at heavy load and diode-emulation-mode (DE)  
at light load, to optimize efficiency in the entire load range.  
The transition is automatically achieved by detecting the  
inductor current when PSI_L is low. If PSI_L is high, the  
controller disables DE and forces CCM on both Core and NB  
regulators.  
A resistor divider off this pin is used to set the Core side OC  
trip level. Additional direction on how to size is provided in  
“Fault Monitoring and Protection” on page 18 on how to size  
the resistor divider.  
Offset Resistor Selection  
Positive-going inductor current flows either from the source  
of the high-side MOSFET, or out of the drain of the low-side  
MOSFET. Negative-going inductor current flows into the  
drain of the low-side MOSFET. When the low-side MOSFET  
conducts positive inductor current, the phase voltage is  
negative with respect to the GND and PGND pins.  
Conversely, when the low-side MOSFET conducts negative  
inductor current, the phase voltage is positive with respect to  
the GND and PGND pins. The ISL6265 monitors the phase  
voltage when the low-side MOSFET is conducting inductor  
current to determine the direction of the inductor current.  
If the OFS pin is connected to ground through a resistor, the  
ISL6265 operates in SVI mode with droop active. The  
resistor between the OFS pin and ground sets the positive  
Core voltage offset per Equation 11.  
1.2V R  
FB  
----------------------------  
R
=
(EQ. 11)  
OFS  
V
OFS  
Where VOFS is the user defined output voltage offset.  
Typically, VOFS is determined by taking half the total output  
voltage droop. The resulting value centers the overall output  
voltage waveform around the programmed SVID level. For  
example, RFB of 1kΩ and a total output droop of 24mV  
would result in an offset voltage of 12mV and a ROFS of  
100kΩ.  
When the output load current is less than half the inductor  
ripple current, the inductor current goes negative. Sinking  
the negative inductor through the low-side MOSFET lowers  
efficiency by preventing DCM period stretching and allowing  
FN6599.1  
May 13, 2009  
17  
ISL6265  
unnecessary conduction losses. In DE, the ISL6265 Core  
from flowing from the output capacitor bank through the  
inductor. In DCM, switching frequency is proportionately  
reduced, thus greatly reducing both conduction and  
switching loss. In DCM, the switching frequency is defined  
by Equation 12.  
regulators automatically enter DCM after the PHASE pin has  
detected positive voltage and LGATE was allowed to go  
high. The NB regulator enters DCM after the PHASE pin has  
detected positive voltage and LGATE was allowed to go high  
for eight consecutive PWM switching cycles. The ISL6265  
turns off the low-side MOSFET once the phase voltage turns  
positive, indicating negative inductor current. The ISL6265  
returns to CCM on the following cycle after the PHASE pin  
detects negative voltage, indicating that the body diode of  
the low-side MOSFET is conducting positive inductor  
current.  
2
F
2 L I  
O
CCM  
------------------- -------------------------------------  
F
=
(EQ. 12)  
DCM  
2
V
1.33  
O
---------  
V
1 –  
O
V
IN  
Where FCCM is equivalent to the Core frequency set by  
Equation 3.  
Fault Monitoring and Protection  
Efficiency can be further improved with a reduction of  
unnecessary switching losses by reducing the PWM  
frequency. It is characteristic of the R3 architecture for the  
PWM frequency to decrease while in diode emulation. The  
extent of the frequency reduction is proportional to the  
reduction of load current. Upon entering DCM, the North  
Bridge PWM frequency makes an initial step-reduction  
because of a 33% step-increase of the window voltage VW.  
The ISL6265 actively monitors Core and Northbridge output  
voltages and currents to detect fault conditions. These fault  
monitors trigger protective measures to prevent damage to  
the processor. One common power good indicator is  
provided for linking to external system monitors.  
Power Good Signal  
The power-good pin (PGOOD) is an open-drain logic output  
that signals if the ISL6265 is not regulating Core and  
Northbridge output voltages within the proper levels or  
output current in one or more outputs has exceeded the  
maximum current setpoint.  
Power-Savings Mode  
The ISL6265 has two operating modes to optimize efficiency  
based on the state of the PSI_L input from the AMD SVI  
control signal. When this input is low, the controller expects  
to deliver low power and enters a power-savings mode to  
improve efficiency in this low power state. The controller’s  
operational modes are designed to work in conjunction with  
the AMD SVI control signal to maintain the optimal system  
configuration for all conditions.  
This pin must be tied to a +3.3V or +5V source through a  
resistor. During shutdown and soft-start, PGOOD is pulled  
low and is released high only after a successful soft-start has  
raised Core and Northbridge output voltages within  
operating limits. PGOOD is pulled low when an overvoltage,  
undervoltage, or overcurrent (OC) condition is detected on  
any output or when the controller is disabled by a POR or  
forcing enable (EN) low. Once a fault condition is triggered,  
the controller acts to protect the processor. The controller  
latches off and PGOOD is pulled low. Toggling EN or VCC  
initiates a soft-start of all outputs. In the event of an OV, the  
controller will initiate a soft-start by toggling EN.  
Northbridge And Dual Plane Core  
While PSI_L is high, the controller operates all three  
regulators in forced CCM. If PSI_L is asserted low by the  
SVI interface, the ISL6265 initiates DE in all three regulators.  
This transition allows the controller to achieve the highest  
possible efficiency over the entire load range for each  
output. A smooth transition is facilitated by the R3  
technology, which correctly maintains the internally  
synthesized ripple current throughout mode transitions of  
each regulator.  
Overcurrent Protection  
Core and Northbridge outputs feature two different methods  
of current sensing. Core output current sensing is achieved  
via inductor DCR or discrete resistor sensing. The  
Northbridge controller uses lower MOSFET rDS(ON) sensing  
to detect output current.  
Uniplane Core  
In uniplane mode, the ISL6265 Core regulator is in 2-phase  
multiphase mode. The controller operates with both phases  
fully active, responding rapidly to transients and delivering  
the maximum power to the load. When the processor asserts  
PSI_L low under reduced load levels, the ISL6265 sheds  
one phase to eliminate switching losses associated with the  
idle channel. Even with the regulator operating in  
single-phase mode, transient response capability is  
maintained.  
CORE OC DETECTION  
Core outputs feature an OC monitor which compares a  
voltage set at the OCSET pin to the voltage measured  
across the current sense capacitor, VC. When the voltage  
across the current sense capacitor exceeds the programmed  
trip level, the comparator signals an OC fault. Figure 10  
shows the basic OC functions within the IC.  
While operating in single-phase DE with PSI_L low, the  
lower MOSFET driver switches the lower MOSFET off at the  
point of zero inductor current to prevent discharge current  
FN6599.1  
May 13, 2009  
18  
ISL6265  
The resistor values must also meet the RBIAS requirement  
that the total series resistance to ground equal 117kΩ.  
CURRENT  
SENSE  
SEE FIGURE 9 FOR  
ADDITIONAL DETAIL  
NORTHBRIDGE OC DETECTION  
Northbridge OC sensing is achieved via rDS(ON) sensing  
across the lower MOSFET. An internal 10µA current source  
develops a voltage across ROCSET_NB, which is compared  
with the voltage developed across the low-side MOSFET as  
measured at the PHASE pin. When the voltage drop across  
the MOSFET exceeds the voltage drop across the resistor,  
an OC event occurs. The OCSET_NB resistor is selected  
based on the relationship in Equation 16.  
ISP  
ISN  
+
V
c
5x  
_
5 x V  
@
C(OC)  
1.17V  
R
OC TRIP CURRENT  
BIAS  
BIAS  
CKT  
10µA  
R
BIAS  
OC  
-
OCSET  
V
+
6
OCSET  
V
OCSET  
6
I
r  
R
OCSET  
OC DS(ON)  
(EQ. 16)  
------------------------------------  
=
R
OCSETNB  
10μA  
ISL6265  
Where IOC is the OC trip level selected for the Northbridge  
application and rDS(ON) is the drain-source ON-resistance of  
the lower MOSFET.  
FIGURE 10. OC TRIP CIRCUITRY  
The sense capacitor voltage, VC, will increase as inductor  
current rises per Equation 7. When the inductor current rises  
to the OC trip level, the voltage across the sense capacitor  
will reach a maximum based on the resistor ratio K. This  
maximum value, VC(OC), is gained up by a factor of 5 and  
compared to the static OC trip level set by the OCSET pin.  
OC FAULT RESPONSE  
When an OC fault occurs on any combination of outputs,  
both Core and Northbridge regulators shutdown and the  
driver outputs are tri-stated. The PGOOD signal transitions  
low indicating a fault condition. The controller will not attempt  
to restart the regulators and the user must toggle either EN  
or VCC to clear the fault condition.  
The recommended voltage range for VC,OC is 6mV to 25mV,  
which sets the resistor divider ratio K, where IOC is the user-  
defined OC trip level (see Equation 13). Typical inductor  
DCR values are on the order of 1mΩ which result in more  
than enough voltage drop to support this VC,OC range.  
Overvoltage Protection  
The ISL6265 monitors the individual Core and Northbridge  
output voltages using differential remote sense amplifiers.  
V
C(OC)  
DCR  
(EQ. 13)  
---------------------------  
K =  
During an OV, PGOOD is latched low and the upper and  
lower MOSFETs are turned off on all outputs. Inductor  
current will decay through the MOSFET body diodes. This  
condition can be reset by bringing EN low or by bringing  
VCC below 3.9V. When these inputs are returned to their  
high operating levels, the controller soft-starts.  
I
OC  
The resistor divider components also impact time-constant  
matching, these components need to meet the parallel  
combination requirements of Equation 9.  
Based on the selected VC(OC) level, the required OC monitor  
trip level is set. The recommended VC(OC) level range will  
result in an OC monitor trip level range of 30mV to 125mV  
based on the internal gain of 5.  
The ISL6265 features a severe overvoltage (OV) threshold  
of 1.8V. If any of the outputs exceed this voltage, an OV fault  
is immediately triggered. PGOOD is latched low and the  
low-side MOSFETs of the offending output(s) are turned on.  
The low-side MOSFETs will remain on until the output  
voltage is pulled below 0.85V at which time all MOSFETs are  
turned off. If the output again rises above 1.8V, the  
protection process repeats. This offers protection against a  
shorted high-side MOSFET while preventing output voltage  
from ringing below ground. The OV is reset by toggling EN  
low. OV detection is active at all times that the controller is  
enabled including after one of the other faults occurs so that  
the processor is protected against high-side MOSFET  
leakage while the MOSFETs are commanded off.  
This OC monitor trip level sets the voltage level required at  
the OCSET pin to create an OC fault at the user-defined OC  
trip level. A resistor divider from the RBIAS pin to ground  
with the mid-point connected to OCSET sets the voltage at  
the pin (see Figure 10). This voltage is internally divided by 6  
and compared with VC(OC). Working backwards, the voltage  
required at the OCSET pin to achieve this OC trip level  
ranges from 180mV to 0.750mV as defined in Equation 14.  
(EQ. 14)  
V
= V  
30  
C(OC)  
OCSET  
The resistor divider ratio used to determine the RBIAS and  
OCSET values is shown in Equation 15.  
Undervoltage Protection  
R
Undervoltage protection is independent of the OC limit. A  
fault latches if any of the sensed output voltages are less  
than the VID set value by a nominal 295mV for 1ms. The  
R
V
OCSET  
1.17V  
OCSET  
(EQ. 15)  
-----------------------------------------------  
-----------------------  
=
R
+ R  
OCSET  
BIAS  
FN6599.1  
May 13, 2009  
19  
ISL6265  
PWM outputs turn off both Core and Northbridge internal  
drivers and PGOOD goes low.  
the capacitor. These two voltages are written as shown in  
Equation 20:  
ΔV  
= I  
PP ESR  
General Application Design Guide  
(EQ. 20)  
ESR  
This design guide is intended to provide a high-level  
explanation of the steps necessary to design a single-phase  
power converter. It is assumed that the reader is familiar with  
many of the basic skills and techniques referenced in the  
following section. In addition to this guide, Intersil provides  
complete reference designs that include schematics, bills of  
materials, and example board layouts.  
and Equation 21:  
I
PP  
-----------------------------  
(EQ. 21)  
ΔV  
=
C
O f  
8C  
SW  
If the output of the converter has to support a load with high  
pulsating current, several capacitors will need to be paralleled  
to reduce the total ESR until the required VP-P is achieved.  
The inductance of the capacitor can cause a brief voltage dip  
if the load transient has an extremely high slew rate. Capacitor  
ESL can significantly impact output voltage ripple. Low  
inductance capacitors should be considered. A capacitor  
dissipates heat as a function of RMS current and frequency.  
Be sure that IP-P is shared by a sufficient quantity of paralleled  
capacitors so that they operate below the maximum rated  
RMS current at FSW. Take into account that the rated value of  
a capacitor can degrade as much as 50% as the DC voltage  
across it increases.  
Selecting the LC Output Filter  
The output inductor and output capacitor bank form a  
low-pass filter responsible for smoothing the pulsating  
voltage at the phase node. The output filter also must  
support the transient energy required by the load until the  
controller can respond. Because it has a low bandwidth  
compared to the switching frequency, the output filter limits  
the system transient response. The output capacitors must  
supply or sink load current while the current in the output  
inductors increases or decreases to meet the demand.  
The duty cycle of an ideal buck converter is a function of the  
input and the output voltage. This relationship is written as  
Equation 17:  
Selection of the Input Capacitor  
The input capacitors are responsible for sourcing the AC  
component of the input current flowing into the upper  
MOSFETs. Their RMS current capability must be sufficient to  
handle the AC component of the current drawn by the upper  
MOSFETs, which is related to duty cycle and the number of  
active phases.  
V
O
---------  
D =  
(EQ. 17)  
V
IN  
The output inductor peak-to-peak ripple current is written as  
Equation 18:  
V
O (1 D)  
The important parameters for the bulk input capacitance are  
the voltage rating and the RMS current rating. For reliable  
operation, select bulk capacitors with voltage and current  
ratings above the maximum input voltage and capable of  
supplying the RMS current required by the switching circuit.  
Their voltage rating should be at least 1.25x greater than the  
maximum input voltage, while a voltage rating of 1.5x is a  
preferred rating. Figure 11 is a graph of the input RMS ripple  
current, normalized relative to output load current, as a  
function of duty cycle for a single-phase regulator that is  
adjusted for converter efficiency.  
-----------------------------  
=
(EQ. 18)  
I
P-P  
f
SW L  
For this type of application, a typical step-down DC/DC  
converter has an IP-P of 20% to 40% of the maximum DC  
output load current. The value of IP-P is selected based upon  
several criteria such as MOSFET switching loss, inductor  
core loss, and the resistive loss of the inductor winding. The  
DC copper loss of the inductor can be estimated by  
Equation 19:  
2
P
= I  
DCR  
(EQ. 19)  
COPPER  
LOAD  
Where ILOAD is the converter output DC current.  
The copper loss can be significant so attention must be  
given to the DCR selection. Another factor to consider when  
choosing the inductor is its saturation characteristics at  
elevated temperature. A saturated inductor could cause  
destruction of circuit components as well as nuisance OCP  
faults.  
A DC/DC buck regulator must have output capacitance CO  
into which ripple current IP-P can flow. Current IP-P develops  
a corresponding ripple voltage VP-P across CO, which is the  
sum of the voltage drop across the capacitor ESR and of the  
voltage change stemming from charge moved in and out of  
FN6599.1  
May 13, 2009  
20  
ISL6265  
In addition to the bulk capacitance, some low ESL ceramic  
0.60  
0.55  
0.50  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0
I
= 0.50  
capacitance is recommended to decouple between the drain  
of the high-side MOSFET and the source of the low-side  
MOSFET.  
I
= 1  
P-P,N  
P-P,N  
I
= 0.75  
P-P,N  
MOSFET Selection and Considerations  
I
= 0  
P-P,N  
The choice of MOSFETs depends on the current each  
MOSFET will be required to conduct, the switching  
frequency, the capability of the MOSFETs to dissipate heat,  
and the availability and nature of heat sinking and air flow.  
I
= 0.25  
P-P,N  
Typically, a MOSFET cannot tolerate even brief excursions  
beyond their maximum drain to source voltage rating. The  
MOSFETs used in the power stage of the converter should  
have a maximum VDS rating that exceeds the sum of the  
upper voltage tolerance of the input power source and the  
voltage spike that occurs when the MOSFETs switch.  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
DUTY CYCLE (V V )  
1.0  
IN/  
O
FIGURE 11. NORMALIZED RMS INPUT CURRENT FOR  
SINGLE PHASE CONVERTER  
There are several power MOSFETs readily available that are  
optimized for DC/DC converter applications. The preferred  
high-side MOSFET emphasizes low gate charge so that the  
device spends the least amount of time dissipating power in  
the linear region. The preferred low-side MOSFET  
emphasizes low r DS(ON) when fully saturated to minimize  
conduction loss.  
The normalized RMS current calculation is written as  
Equation 22:  
2
D
12  
------  
I
=
D ⋅ (1 D) +  
I  
IN_RMS, N  
PP,N  
(EQ. 22)  
Where:  
- IMAX is the maximum continuous ILOAD of the converter  
For the low-side (LS) MOSFET, the power loss can be  
assumed to be conductive only and is written as Equation 24:  
- IPP,N is the ratio of inductor peak-to-peak ripple current  
to IMAX  
2
P
I  
r  
DS(ON)_LS (1 D)  
(EQ. 24)  
- D is the duty cycle that is adjusted to take into account  
the efficiency of the converter which is written as:  
CON_LS  
LOAD  
V
For the high-side (HS) MOSFET, the its conduction loss is  
written as Equation 25:  
O
⋅ η  
(EQ. 23)  
-----------------  
D =  
V
IN  
2
P
= I  
r  
DS(ON)_HS D  
(EQ. 25)  
- where η is converter efficiency  
CON_HS  
LOAD  
Figure 12 provides the same input RMS current information  
for two-phase designs.  
For the high-side MOSFET, the switching loss is written as  
Equation 26:  
0.3  
V
V
IN IPEAK tOFF f  
IN IVALLEY tON f  
SW  
SW  
---------------------------------------------------------------- -------------------------------------------------------------  
P
=
+
SW_HS  
2
2
(EQ. 26)  
0.2  
Where:  
I
= 0.5  
P-P,N  
- IVALLEY is the difference of the DC component of the  
inductor current minus 1/2 of the inductor ripple current  
- IPEAK is the sum of the DC component of the inductor  
current plus 1/2 of the inductor ripple current  
IP-P,N = 0.75  
0.1  
I
= 0  
P-P,N  
- tON is the time required to drive the device into  
saturation  
- tOFF is the time required to drive the device into cut-off  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
Selecting The Bootstrap Capacitor  
DUTY CYCLE (V V )  
IN/  
O
All three integrated drivers feature an internal bootstrap  
schottky diode. Simply adding an external capacitor across  
the BOOT and PHASE pins completes the bootstrap circuit.  
The bootstrap function is also designed to prevent the  
bootstrap capacitor from overcharging due to the large  
negative swing at the PHASE node. This reduces voltage  
stress on the BOOT and PHASE pins.  
FIGURE 12. NORMALIZED RMS INPUT CURRENT FOR  
2-PHASE CONVERTER  
FN6599.1  
May 13, 2009  
21  
ISL6265  
The bootstrap capacitor must have a maximum voltage  
rating above PVCC + 4V and its capacitance value is  
selected per Equation 27:  
capacitors (ceramic) should be placed as close as possible  
to the decoupling target (microprocessor), making use of the  
shortest connection paths to any internal planes. Place the  
components in such a way that the area under the IC has  
less noise traces with high dV/dt and di/dt, such as gate  
signals and phase node signals.  
Q
g
-----------------------  
C
(EQ. 27)  
BOOT  
ΔV  
BOOT  
Where:  
GND  
VIAS TO  
GROUND  
PLANE  
- Qg is the total gate charge required to turn on the  
high-side MOSFET  
OUTPUT  
CAPACITORS  
SCHOTTKY  
DIODE  
- ΔVBOOT, is the maximum allowed voltage decay across  
the boot capacitor each time the high-side MOSFET is  
switched on  
VOUT  
PHASE  
NODE  
LOW-SIDE  
MOSFETS  
INDUCTOR  
As an example, suppose the high-side MOSFET has a total  
gate charge Qg, of 25nC at VGS = 5V, and a ΔVBOOT of  
200mV. The calculated bootstrap capacitance is 0.125µF; for  
a comfortable margin, select a capacitor that is double the  
calculated capacitance. In this example, 0.22µF will suffice.  
Use a low temperature-coefficient ceramic capacitor.  
HIGH-SIDE  
MOSFETS  
INPUT  
CAPACITORS  
VIN  
FIGURE 13. TYPICAL POWER COMPONENT PLACEMENT  
Signal Ground and Power Ground  
The bottom of the ISL6265 QFN package is the signal  
ground (GND) terminal for analog and logic signals of the IC.  
Connect the GND pad of the ISL6265 to the island of ground  
plane under the top layer using several vias, for a robust  
thermal and electrical conduction path. Connect the input  
capacitors, the output capacitors, and the source of the  
lower MOSFETs to the power ground plane.  
PCB Layout Considerations  
Power and Signal Layers Placement on the PCB  
As a general rule, power layers should be close together,  
either on the top or bottom of the board, with the weak  
analog or logic signal layers on the opposite side of the  
board. The ground-plane layer should be adjacent to the  
signal layer to provide shielding. The ground plane layer  
should have an island located under the IC, the  
compensation components, and the FSET components. The  
island should be connected to the rest of the ground plane  
layer at one point.  
Routing and Connection Details  
Specific pins (and the trace routing from them), require extra  
attention during the layout process. The following  
sub-sections outline concerns by pin name.  
PGND PINS  
Component Placement  
This is the return path for the pull-down of the LGATE  
low-side MOSFET gate driver. Ideally, PGND should be  
connected to the source of the low-side MOSFET with a  
low-resistance, low-inductance path.  
There are two sets of critical components in a DC/DC  
converter; the power components and the small signal  
components. The power components are the most critical  
because they switch large amount of energy. The small  
signal components connect to sensitive nodes or supply  
critical bypassing current and signal coupling.  
VIN PIN  
The VIN pin should be connected close to the drain of the  
high-side MOSFET, using a low- resistance and  
low-inductance path.  
The power components should be placed first and these  
include MOSFETs, input and output capacitors, and the  
inductor. It is important to have a symmetrical layout for each  
power train, preferably with the controller located equidistant  
from each power train. Symmetrical layout allows heat to be  
dissipated equally across all power trains. Keeping the  
distance between the power train and the control IC short  
helps keep the gate drive traces short. These drive signals  
include the LGATE, UGATE, PGND, PHASE and BOOT.  
VCC PIN  
For best performance, place the decoupling capacitor very  
close to the VCC and GND pins.  
PVCC PIN  
For best performance, place the decoupling capacitor very  
close to the PVCC and respective PGND pins, preferably on  
the same side of the PCB as the ISL6265 IC.  
When placing MOSFETs, try to keep the source of the upper  
MOSFETs and the drain of the lower MOSFETs as close as  
thermally possible (see Figure 13). Input high-frequency  
capacitors should be placed close to the drain of the upper  
MOSFETs and the source of the lower MOSFETs. Place the  
output inductor and output capacitors between the  
ENABLE AND PGOOD PINS  
These are logic signals that are referenced to the GND pin.  
Treat as a typical logic signal.  
MOSFETs and the load. High-frequency output decoupling  
FN6599.1  
May 13, 2009  
22  
ISL6265  
FB PINS  
The input impedance of the FB pin is high, so place the  
voltage programming and loop compensation components  
close to the COMP, FB, and GND pins keeping the high  
impedance trace short.  
FSET_NB PIN  
This pin requires a quiet environment. The resistor RFSET  
should be placed directly adjacent to this pin. Keep fast  
moving nodes away from this pin.  
LGATE ROUTING  
The LGATE trace has a signal going through it that is both  
high dV/dt and di/dt, with high peak charging and  
discharging current. Route this trace in parallel with the trace  
from the PGND pin. These two traces should be short, wide,  
and away from other traces. There should be no other weak  
signal traces in proximity with these traces on any layer.  
BOOT AND PHASE ROUTING  
The signals going through these traces are both high dv/dt  
and high di/dt, with high peak charging and discharging  
current. Route the UGATE and PHASE pins in parallel with  
short and wide traces. There should be no other weak signal  
traces in proximity with these traces on any layer.  
Copper Size for the Phase Node  
The parasitic capacitance and parasitic inductance of the  
phase node should be kept very low to minimize ringing. It is  
best to limit the size of the PHASE node copper in strict  
accordance with the current and thermal management of the  
application. An MLCC should be connected directly across  
the drain of the upper MOSFET and the source of the lower  
MOSFET to suppress the turn-off voltage.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN6599.1  
May 13, 2009  
23  
ISL6265  
Package Outline Drawing  
L48.6x6  
48 LEAD THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE  
Rev 1, 4/07  
4X  
4.4  
6.00  
0.40  
44X  
A
6
B
PIN #1 INDEX AREA  
48  
37  
6
1
36  
PIN 1  
INDEX AREA  
4 .40 ± 0.15  
25  
12  
0.15  
(4X)  
13  
24  
0.10 M C A B  
0.05 M C  
TOP VIEW  
48X 0.45 ± 0.10  
BOTTOM VIEW  
4
48X 0.20  
SEE DETAIL "X"  
C
0.10  
C
MAX 0.80  
BASE PLANE  
SEATING PLANE  
0.08  
( 44 X 0 . 40 )  
( 5. 75 TYP )  
(
C
SIDE VIEW  
4. 40 )  
5
0 . 2 REF  
C
( 48X 0 . 20 )  
( 48X 0 . 65 )  
0 . 00 MIN.  
0 . 05 MAX.  
DETAIL "X"  
TYPICAL RECOMMENDED LAND PATTERN  
NOTES:  
1. Dimensions are in millimeters.  
Dimensions in ( ) for Reference Only.  
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.  
3.  
Unless otherwise specified, tolerance : Decimal ± 0.05  
4. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
Tiebar shown (if present) is a non-functional feature.  
5.  
6.  
The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
FN6599.1  
May 13, 2009  
24  

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