HFA3046 [INTERSIL]
Ultra High Frequency Transistor Arrays; 超高频晶体管阵列
| 型号： | HFA3046 |
| 厂家： | 
Intersil |
| 描述： | Ultra High Frequency Transistor Arrays |
| 文件： | 总9页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFA3046, HFA3096,
HFA3127, HFA3128
Data Sheet
October 1998
File Number 3076.10
Ultra High Frequency Transistor Arrays
Features
• NPN Transistor (f ). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
T
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . 130
FE
• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 50V
A
• PNP Transistor (f ) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
T
transistors exhibit a f of 8GHz while the PNP transistors
T
• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . . 60
FE
provide a f of 5.5GHz. Both types exhibit low noise (3.5dB),
T
• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 20V
A
making them ideal for high frequency amplifier and mixer
applications.
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an NPN-
PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
• Pin Compatible with Industry Standard 3XXX Series
Arrays
Applications
For PSPICE models, please request AnswerFAX document
number 663046. Intersil also provides an Application Note
illustrating the use of these devices as RF amplifiers
(request AnswerFAX document 99315).
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Ordering Information
TEMP.
RANGE ( C)
PKG.
NO.
o
PART NUMBER
HFA3046B
PACKAGE
-55 to 125 14 Ld SOIC
-55 to 125 16 Ld SOIC
-55 to 125 16 Ld SOIC
-55 to 125 16 Ld SOIC
M14.15
M16.15
M16.15
M16.15
HFA3096B
HFA3127B
HFA3128B
Pinouts
HFA3046
HFA3096
HFA3127
HFA3128
TOP VIEW
TOP VIEW
TOP VIEW
TOP VIEW
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
Q
1
Q
1
Q
1
Q
1
2
Q
5
Q
Q
5
4
Q
Q
5
Q
Q
Q
2
2
5
4
Q
Q
2
NC
NC
Q
4
Q
Q
Q
Q
3
4
3
3
8
Q
3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-447
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Thermal Information
o
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Thermal Resistance (Typical, Note 1)
θJA ( C/W)
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
120
115
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
o
Collector Current (100% Duty Cycle) . . . . . 18.5mA at T = 150 C
J
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175 C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150 C
Maximum Storage Temperature Range. . . . . . . . . . -65 C to 150 C
o
o
34mA at T = 125 C
J
o
o
37mA at T = 110 C
J
o
o
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
o
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C
(SOIC - Lead Tips Only)
Operating Information
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
o
Electrical Specifications T = 25 C
A
DIE
SOIC
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC NPN CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V
(BR)CBO
I
I
I
I
= 100µA, I = 0
12
8
18
12
20
6
-
-
-
-
12
8
18
12
20
6
-
-
-
-
V
V
V
V
C
C
C
E
E
Collector-to-Emitter Breakdown
Voltage, V
= 100µA, I = 0
B
(BR)CEO
Collector-to-Emitter Breakdown
Voltage, V
= 100µA, Base Shorted to Emitter
10
5.5
10
5.5
(BR)CES
Emitter-to-Base Breakdown
Voltage, V
= 10µA, I = 0
C
(BR)EBO
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
V
V
= 6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
= 8V, I = 0
0.1
0.3
0.1
0.3
E
Collector-to-Emitter Saturation
Voltage, V
I
= 10mA, I = 1mA
B
0.5
0.5
C
CE(SAT)
Base-to-Emitter Voltage, V
I
I
= 10mA
= 10mA
-
0.85
130
0.95
-
-
0.85
130
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
40
40
C
V
= 2V
CE
FE
Early Voltage, V
I
= 1mA, V
= 3.5V
CE
20
-
50
-1.5
1
-
-
-
20
-
50
-1.5
1
-
-
-
V
A
C
C
o
Base-to-Emitter Voltage Drift
Collector-to-Collector Leakage
I
= 10mA
mV/ C
-
-
pA
o
Electrical Specifications T = 25 C
A
DIE
SOIC
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
= 5V,
-
3.5
-
-
3.5
-
dB
CE
= 5mA, Z = 50Ω
I
I
I
I
C
C
C
C
S
f
Current Gain-Bandwidth
= 1mA, V
CE
= 5V
-
-
-
5.5
8
-
-
-
-
-
-
5.5
8
-
-
-
GHz
GHz
GHz
T
Product
= 10mA, V
= 10mA, V
= 5V
CE
CE
Power Gain-Bandwidth Product,
= 5V
6
2.5
f
MAX
3-448
HFA3046, HFA3096, HFA3127, HFA3128
o
Electrical Specifications T = 25 C (Continued)
A
DIE
TYP
200
200
SOIC
TYP
500
PARAMETER
TEST CONDITIONS
= -3V
MIN
MAX
MIN
MAX
UNITS
fF
Base-to-Emitter Capacitance
Collector-to-Base Capacitance
V
V
-
-
-
-
-
-
-
-
BE
CB
= 3V
500
fF
o
Electrical Specifications T = 25 C
A
DIE
SOIC
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC PNP CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V
I
I
I
I
= -100µA, I = 0
10
8
15
15
15
5
-
-
-
-
10
8
15
15
15
5
-
-
-
-
V
V
V
V
C
C
C
E
E
(BR)CBO
Collector-to-Emitter Breakdown
Voltage, V
= -100µA, I = 0
B
(BR)CEO
Collector-to-Emitter Breakdown
Voltage, V
= -100µA, Base Shorted to Emitter
10
4.5
10
4.5
(BR)CES
Emitter-to-Base Breakdown
Voltage, V
= -10µA, I = 0
C
(BR)EBO
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
V
V
= -6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
= -8V, I = 0
0.1
0.3
0.1
0.3
E
Collector-to-Emitter Saturation
Voltage, V
I
= -10mA, I = -1mA
B
0.5
0.5
C
CE(SAT)
Base-to-Emitter Voltage, V
I
I
= -10mA
-
0.85
60
0.95
-
-
0.85
60
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
= -10mA, V
= -2V
20
20
C
CE
FE
Early Voltage, V
I
I
= -1mA, V
= -10mA
= -3.5V
CE
10
-
20
-1.5
1
-
-
-
10
-
20
-1.5
1
-
-
-
V
A
C
o
Base-to-Emitter Voltage Drift
Collector-to-Collector Leakage
mV/ C
C
-
-
pA
o
Electrical Specifications T = 25 C
A
DIE
SOIC
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
= -5V,
-
3.5
-
-
3.5
-
dB
CE
= -5mA, Z = 50Ω
I
I
I
I
C
C
C
C
S
f
Current Gain-Bandwidth
= -1mA, V
= -5V
CE
-
-
-
2
5.5
3
-
-
-
-
-
-
2
5.5
2
-
-
-
GHz
GHz
GHz
T
Product
= -10mA, V
= -10mA, V
= -5V
= -5V
CE
CE
Power Gain-Bandwidth
Product
Base-to-Emitter Capacitance
Collector-to-Base Capacitance
V
V
= 3V
-
-
200
300
-
-
-
-
500
600
-
-
fF
fF
BE
CB
= -3V
3-449
HFA3046, HFA3096, HFA3127, HFA3128
o
Electrical Specifications T = 25 C
A
DIE
SOIC
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
Input Offset Current
Input Offset Voltage TC
I
I
I
= 10mA, V
= 10mA, V
= 10mA, V
= 5V
= 5V
= 5V
-
-
-
1.5
5
5.0
25
-
-
-
-
1.5
5
5.0
25
-
mV
C
C
C
CE
CE
CE
µA
o
0.5
0.5
µV/ C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3µm x 50µm Transistor
FREQ. (Hz)
|S
11
|
PHASE(S
)
|S
21
|
PHASE(S
)
|S
|
PHASE(S
)
|S |
22
PHASE(S )
22
11
21
12
12
V
= 5V and I = 5mA
CE
C
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
0.83
-11.78
-22.82
-32.64
-41.08
-48.23
-54.27
-59.41
-63.81
-67.63
-70.98
-73.95
-76.62
-79.04
-81.25
-83.28
-85.17
-86.92
-88.57
-90.12
-91.59
-92.98
-94.30
-95.57
-96.78
-97.93
-99.05
11.07
10.51
9.75
8.91
8.10
7.35
6.69
6.11
5.61
5.17
4.79
4.45
4.15
3.89
3.66
3.45
3.27
3.10
2.94
2.80
2.68
2.56
2.45
2.35
2.26
2.18
2.10
2.02
1.96
1.89
168.57
157.89
148.44
140.36
133.56
127.88
123.10
119.04
115.57
112.55
109.91
107.57
105.47
103.57
101.84
100.26
98.79
1.41E-02
2.69E-02
3.75E-02
4.57E-02
5.19E-02
5.65E-02
6.00E-02
6.27E-02
6.47E-02
6.63E-02
6.75E-02
6.85E-02
6.93E-02
7.00E-02
7.05E-02
7.10E-02
7.13E-02
7.17E-02
7.19E-02
7.21E-02
7.23E-02
7.25E-02
7.27E-02
7.28E-02
7.29E-02
7.30E-02
7.31E-02
7.31E-02
7.32E-02
7.32E-02
78.88
68.63
59.58
51.90
45.50
40.21
35.82
32.15
29.07
26.45
24.19
22.24
20.53
19.02
17.69
16.49
15.41
14.43
13.54
12.73
11.98
11.29
10.64
10.05
9.49
0.97
0.93
0.86
0.79
0.73
0.67
0.62
0.57
0.53
0.50
0.47
0.45
0.43
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.35
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.33
-11.05
-21.35
-30.44
-38.16
-44.59
-49.93
-54.37
-58.10
-61.25
-63.96
-66.31
-68.37
-70.19
-71.83
-73.31
-74.66
-75.90
-77.05
-78.12
-79.13
-80.09
-80.99
-81.85
-82.68
-83.47
-84.23
-84.97
-85.68
-86.37
-87.05
0.79
0.73
0.67
0.61
0.55
0.50
0.46
0.42
0.39
0.36
0.34
0.32
0.30
0.28
0.27
0.25
0.24
0.23
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
97.43
96.15
94.95
93.81
92.73
91.70
90.72
89.78
88.87
8.96
-100.12
-101.15
-102.15
-103.11
88.00
8.47
87.15
8.01
86.33
7.57
85.54
7.16
3-450
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of NPN 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
|S
11
|
PHASE(S
)
|S
21
|
PHASE(S
)
|S
|
PHASE(S
)
|S |
22
PHASE(S
)
11
21
12
12
22
V
= 5V and I = 10mA
CE
1.0E+08
C
0.72
0.67
0.60
0.53
0.47
0.42
0.37
0.34
0.31
0.29
0.27
0.25
0.24
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
0.16
0.15
0.15
0.15
0.15
0.14
-16.43
-31.26
-43.76
-54.00
-62.38
-69.35
-75.26
-80.36
-84.84
-88.83
-92.44
-95.73
-98.75
15.12
13.90
12.39
10.92
9.62
8.53
7.62
6.86
6.22
5.69
5.23
4.83
4.49
4.19
3.93
3.70
3.49
3.30
3.13
2.98
2.84
2.72
2.60
2.49
2.39
2.30
2.22
2.14
2.06
1.99
165.22
152.04
141.18
132.57
125.78
120.37
116.00
112.39
109.36
106.77
104.51
102.53
100.75
99.16
97.70
96.36
95.12
93.96
92.87
91.85
90.87
89.94
89.06
88.21
87.39
86.60
85.83
85.09
84.36
83.66
1.27E-02
2.34E-02
3.13E-02
3.68E-02
4.05E-02
4.31E-02
4.49E-02
4.63E-02
4.72E-02
4.80E-02
4.86E-02
4.90E-02
4.94E-02
4.97E-02
4.99E-02
5.01E-02
5.03E-02
5.05E-02
5.06E-02
5.07E-02
5.08E-02
5.09E-02
5.10E-02
5.11E-02
5.12E-02
5.12E-02
5.13E-02
5.13E-02
5.14E-02
5.15E-02
75.41
62.89
52.58
44.50
38.23
33.34
29.47
26.37
23.84
21.75
20.00
18.52
17.25
16.15
15.19
14.34
13.60
12.94
12.34
11.81
11.33
10.89
10.50
10.13
9.80
0.95
0.88
0.79
0.70
0.63
0.57
0.51
0.47
0.44
0.41
0.39
0.37
0.35
0.34
0.33
0.32
0.31
0.31
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
-14.26
-26.95
-37.31
-45.45
-51.77
-56.72
-60.65
-63.85
-66.49
-68.71
-70.62
-72.28
-73.76
-75.08
-76.28
-77.38
-78.41
-79.37
-80.27
-81.13
-81.95
-82.74
-83.50
-84.24
-84.95
-85.64
-86.32
-86.98
-87.62
-88.25
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
-101.55
-104.15
-106.57
-108.85
-110.98
-113.00
-114.90
-116.69
-118.39
-120.01
-121.54
-122.99
-124.37
-125.69
-126.94
-128.14
-129.27
9.49
9.21
8.95
8.71
8.49
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor
FREQ. (Hz)
|S
11
|
PHASE(S
)
|S
21
|
PHASE(S
)
|S
|
PHASE(S
)
|S |
22
PHASE(S
)
11
21
12
12
22
V
= -5V and I = -5mA
CE
1.0E+08
C
0.72
0.68
0.62
0.57
0.52
-16.65
-32.12
-45.73
-57.39
-67.32
10.11
9.44
8.57
7.68
6.86
166.77
154.69
144.40
135.95
129.11
1.66E-02
3.10E-02
4.23E-02
5.05E-02
5.64E-02
77.18
65.94
56.39
48.66
42.52
0.96
0.90
0.82
0.74
0.67
-10.76
-20.38
-28.25
-34.31
-38.81
2.0E+08
3.0E+08
4.0E+08
5.0E+08
3-451
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
11
|
PHASE(S
)
|S
21
|
PHASE(S
123.55
118.98
115.17
111.94
109.17
106.76
104.63
102.72
101.01
99.44
)
|S
|
PHASE(S
37.66
33.79
30.67
28.14
26.06
24.33
22.89
21.67
20.64
19.76
19.00
18.35
17.79
17.30
16.88
16.52
16.20
15.92
15.68
15.48
15.30
15.15
15.01
14.90
14.81
)
|S
|
PHASE(S
-42.10
-44.47
-46.15
-47.33
-48.15
-48.69
-49.05
-49.26
-49.38
-49.43
-49.44
-49.43
-49.40
-49.38
-49.36
-49.35
-49.35
-49.38
-49.42
-49.49
-49.56
-49.67
-49.81
-49.96
-50.13
)
11
21
12
12
22
22
0.47
0.43
0.40
0.38
0.36
0.34
0.33
0.32
0.30
0.30
0.29
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.24
0.24
-75.83
6.14
5.53
5.01
4.56
4.18
3.86
3.58
3.33
3.12
2.92
2.75
2.60
2.47
2.34
2.23
2.13
2.04
1.95
1.87
1.80
1.73
1.67
1.61
1.56
1.51
6.07E-02
6.37E-02
6.60E-02
6.77E-02
6.91E-02
7.01E-02
7.09E-02
7.16E-02
7.22E-02
7.27E-02
7.32E-02
7.35E-02
7.39E-02
7.42E-02
7.45E-02
7.47E-02
7.50E-02
7.52E-02
7.55E-02
7.57E-02
7.59E-02
7.61E-02
7.63E-02
7.65E-02
7.67E-02
0.61
0.55
0.51
0.47
0.44
0.41
0.39
0.37
0.36
0.34
0.33
0.32
0.31
0.30
0.30
0.29
0.28
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.26
-83.18
-89.60
-95.26
-100.29
-104.80
-108.86
-112.53
-115.86
-118.90
-121.69
-124.24
-126.59
-128.76
-130.77
-132.63
-134.35
-135.96
-137.46
-138.86
-140.17
-141.39
-142.54
-143.62
-144.64
98.01
96.68
95.44
94.29
93.19
92.16
91.18
90.24
89.34
88.48
87.65
86.85
86.07
85.31
84.58
V
= -5V, I = -10mA
C
CE
1.0E+08
0.58
0.53
0.48
0.43
0.40
0.37
0.35
0.33
0.32
0.31
0.30
0.30
-23.24
-44.07
13.03
11.75
10.25
8.88
7.72
6.78
6.01
5.39
4.87
4.44
4.07
3.76
163.45
149.11
137.78
129.12
122.49
117.33
113.22
109.85
107.05
104.66
102.59
100.76
1.43E-02
2.58E-02
3.38E-02
3.90E-02
4.25E-02
4.48E-02
4.64E-02
4.76E-02
4.85E-02
4.92E-02
4.97E-02
5.02E-02
73.38
60.43
50.16
42.49
36.81
32.59
29.39
26.94
25.04
23.55
22.37
21.44
0.93
0.85
0.74
0.65
0.58
0.51
0.47
0.43
0.40
0.37
0.35
0.33
-13.46
-24.76
-33.10
-38.83
-42.63
-45.07
-46.60
-47.49
-47.97
-48.18
-48.20
-48.11
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
-61.50
-75.73
-87.36
-96.94
-104.92
-111.64
-117.36
-122.27
-126.51
-130.21
3-452
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
11
|
PHASE(S
)
|S
21
|
PHASE(S
99.14
97.67
96.33
95.10
93.96
92.90
91.90
90.95
90.05
89.20
88.37
87.59
86.82
86.09
85.38
84.68
84.01
83.35
)
|S
|
PHASE(S
20.70
20.11
19.65
19.29
19.01
18.80
18.65
18.55
18.49
18.46
18.47
18.50
18.55
18.62
18.71
18.80
18.91
19.03
)
|S
|
PHASE(S
-47.95
-47.77
-47.58
-47.39
-47.23
-47.09
-46.98
-46.91
-46.87
-46.87
-46.90
-46.97
-47.07
-47.18
-47.34
-47.55
-47.76
-48.00
)
11
21
12
12
22
22
0.29
0.29
0.28
0.28
0.28
0.28
0.27
0.27
0.27
0.27
0.27
0.27
0.27
0.26
0.26
0.26
0.26
0.26
-133.46
-136.33
-138.89
-141.17
-143.21
-145.06
-146.73
-148.26
-149.65
-150.92
-152.10
-153.18
-154.17
-155.10
-155.96
-156.76
-157.51
-158.21
3.49
3.25
3.05
2.87
2.70
2.56
2.43
2.31
2.20
2.10
2.01
1.93
1.86
1.79
1.72
1.66
1.60
1.55
5.06E-02
5.09E-02
5.12E-02
5.15E-02
5.18E-02
5.21E-02
5.23E-02
5.26E-02
5.28E-02
5.30E-02
5.33E-02
5.35E-02
5.38E-02
5.40E-02
5.42E-02
5.45E-02
5.47E-02
5.50E-02
0.32
0.31
0.30
0.29
0.28
0.27
0.27
0.26
0.26
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.23
Typical Performance Curves
V
= 3V
100m
10m
1m
CE
I
I
= 200µA
= 160µA
25
20
15
10
5
B
I
C
B
I
B
100µ
10µ
1µ
I
=120µA
B
I
I
= 80µA
= 40µA
B
100n
10n
1n
B
0
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
BASE TO EMITTER VOLTAGE (V)
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
3-453
HFA3046, HFA3096, HFA3127, HFA3128
Typical Performance Curves (Continued)
10.0
8.0
6.0
4.0
2.0
0
V
= 3V
CE
V
= 5V
CE
160
140
120
100
80
V
= 1V
CE
V
= 3V
CE
60
40
20
0
1µ
10µ
100µ
1m
10m
100m
0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPNGAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
V
= -3V
-25
-100m
-10m
-1m
CE
I
= -400µA
= -320µA
= -240µA
B
I
C
I
B
-20
-15
-10
-5
I
B
I
B
B
-100µ
-10µ
-1µ
I
= -160µA
I
= -80µA
B
-100n
-10n
-1n
0
0
-1
-2
-3
-4
-5
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
COLLECTOR TO EMITTER VOLTAGE (V)
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 6. PNPCOLLECTOR CURRENT AND BASE CURRENT
vs BASE TO EMITTER VOLTAGE
5.0
V
= -3V
CE
V
= -5V
= -3V
CE
4.0
3.0
2.0
1.0
160
140
120
100
80
V
CE
V
= -1V
CE
60
40
20
0
-1µ
-0.1
-1.0
-10
-100
-10µ
-100µ
-1m
-10m
-100m
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
Die Characteristics
3-454
HFA3046, HFA3096, HFA3127, HFA3128
DIE DIMENSIONS:
PASSIVATION:
53 mils x 52 mils x 19 mils
Type: Nitride
1340µm x 1320µm x 483µm
Thickness: 4kÅ ±0.5kÅ
METALLIZATION:
PROCESS:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Thickness: Metal 2: 16kÅ 0.8kÅ
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2
1
16
15
3
4
5
6
14
13
12
11
1340µm
(53mils)
7
8
9
10
1320µm
(52mils)
HFA3046
2
1
14
13
3
12
4
5
6
1340µm
(53mils)
11
10
9
7
8
1320µm
(52mils)
Pad numbers correspond to SOIC pinout.
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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3-455
相关型号：
HFA3096BZ
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16
RENESAS
HFA3096BZ-T
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16
RENESAS
HFA3096BZ96
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16
RENESAS
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