HFA3046BZ [INTERSIL]
Ultra High Frequency Transistor Arrays; 超高频晶体管阵列
| 型号： | HFA3046BZ |
| 厂家： | 
Intersil |
| 描述： | Ultra High Frequency Transistor Arrays |
| 文件： | 总13页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFA3046, HFA3096, HFA3127, HFA3128
®
Data Sheet
December 21, 2005
FN3076.13
Ultra High Frequency Transistor Arrays
Features
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
• NPN Transistor (f ) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
T
• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . . 130
FE
• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 50V
A
• PNP Transistor (f ). . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
T
transistors exhibit a f of 8GHz while the PNP transistors
T
• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . . . 60
FE
provide a f of 5.5GHz. Both types exhibit low noise (3.5dB),
T
making them ideal for high frequency amplifier and mixer
applications.
• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . .20V
A
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
• Pin Compatible with Industry Standard 3XXX Series
Arrays
• Pb-Free Plus Anneal Available (RoHS Compliant)
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Ordering Information
PART NUMBER*
PART MARKING
TEMP. RANGE (°C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
PACKAGE
14 Ld SOIC
PKG. DWG. #
M14.15
HFA3046B
HFA3046B
HFA3046BZ (Note)
HFA3096B
HFA3046BZ
HFA3096B
HFA3096BZ
HFA3127B
HFA3127BZ
127
14 Ld SOIC (Pb-free)
16 Ld SOIC
M14.15
M16.15
M16.15
M16.15
M16.15
L16.3x3
L16.3x3
M16.15
M16.15
L16.3x3
L16.3x3
HFA3096BZ (Note)
HFA3127B
16 Ld SOIC (Pb-free)
16 Ld SOIC
HFA3127BZ (Note)
HFA3127R
16 Ld SOIC (Pb-free)
16 Ld 3x3 QFN
HFA3127RZ (Note)
HFA3128B
127Z
16 Ld 3x3 QFN (Pb-free)
16 Ld SOIC
HFA3128B
HFA3128BZ
128
HFA3128BZ (Note)
HFA3128R
16 Ld SOIC (Pb-free)
16 Ld 3x3 QFN
HFA3128RZ (Note)
128Z
16 Ld 3x3 QFN (Pb-free)
*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HFA3046, HFA3096, HFA3127, HFA3128
Pinouts
HFA3046
TOP VIEW
HFA3096
HFA3127
HFA3128
TOP VIEW
TOP VIEW
TOP VIEW
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
Q
1
Q
1
Q
1
Q
1
Q
5
Q
Q
5
4
Q
Q
5
Q
Q
Q
2
2
5
4
Q
2
Q
2
NC
NC
Q
4
Q
Q
Q
Q
3
4
3
3
8
Q
3
HFA3127, HFA3128
TOP VIEW
16 15 14 13
Q2E
1
12 Q5B
11 Q5E
10 Q5C
Q2B
NC
2
3
4
Q3C
9
Q4C
5
6
7
8
FN3076.13
2
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Thermal Information
Thermal Resistance (Typical)
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
θ
(°C/W)
θ
(°C/W)
JC
JA
14 Ld SOIC Package (Note 1) . . . . . . .
16 Ld SOIC Package (Note 1) . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
120
115
57
N/A
N/A
10
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at T = 150°C
J
J
34mA at T = 125°C
37mA at T = 110°C
J
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
2. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.
JC
3. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
Electrical Specifications
T = 25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC NPN CHARACTERISTICS
Collector to Base Breakdown
I
= 100µA, I = 0
12
8
18
12
20
6
-
-
-
-
12
8
18
12
20
6
-
-
-
-
V
V
V
V
C
C
C
E
E
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
I
I
I
= 100µA, I = 0
B
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
= 100µA, Base Shorted to Emitter
10
5.5
10
5.5
(BR)CES
Emitter to Base Breakdown
Voltage, V
= 10µA, I = 0
C
(BR)EBO
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
V
V
= 6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
= 8V, I = 0
0.1
0.3
0.1
0.3
E
Collector to Emitter Saturation
Voltage, V
I
= 10mA, I = 1mA
B
0.5
0.5
C
CE(SAT)
Base to Emitter Voltage, V
I
I
= 10mA
-
0.85
130
0.95
-
-
0.85
130
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
C
= 10mA, V
= 2V
= 3.5V
40
40
CE
FE
Early Voltage, V
I
I
= 1mA, V
= 10mA
20
-
50
-1.5
1
-
-
-
20
-
50
-1.5
1
-
-
-
V
A
C
CE
Base to Emitter Voltage Drift
Collector to Collector Leakage
mV/°C
pA
C
-
-
Electrical Specifications
T = 25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC NPN CHARACTERISTICS
Noise Figure f = 1.0GHz, V
= 5V,
-
3.5
-
-
3.5
-
dB
CE
I
I
I
= 5mA, Z = 50Ω
C
C
C
S
f
Current Gain-Bandwidth
= 1mA, V
= 5V
-
-
5.5
8
-
-
-
-
5.5
8
-
-
GHz
GHz
T
CE
Product
= 10mA, V
CE
= 5V
FN3076.13
3
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
T
= 25°C (Continued)
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
= 10mA, V = 5V
MIN
TYP
MAX
MIN
MAX
UNITS
Power Gain-Bandwidth Product,
I
-
6
-
-
2.5
-
GHz
C
CE
f
MAX
Base to Emitter Capacitance
Collector to Base Capacitance
V
V
= -3V
= 3V
-
-
200
200
-
-
-
-
500
500
-
-
fF
fF
BE
CB
Electrical Specifications
T = 25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC PNP CHARACTERISTICS
Collector to Base Breakdown
I
= -100µA, I = 0
10
8
15
15
15
5
-
-
-
-
10
8
15
15
15
5
-
-
-
-
V
V
V
V
C
C
C
E
E
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
I
I
I
= -100µA, I = 0
B
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
= -100µA, Base Shorted to Emitter
10
4.5
10
4.5
(BR)CES
Emitter to Base Breakdown
Voltage, V
= -10µA, I = 0
C
(BR)EBO
Collector Cutoff Current, I
V
V
= -6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
Collector Cutoff Current, I
= -8V, I = 0
0.1
0.3
0.1
0.3
E
Collector to Emitter Saturation
Voltage, V
I
= -10mA, I = -1mA
B
0.5
0.5
C
CE(SAT)
Base to Emitter Voltage, V
I
I
= -10mA
-
0.85
60
0.95
-
-
0.85
60
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
C
= -10mA, V
= -2V
20
20
CE
FE
Early Voltage, V
I
I
= -1mA, V
= -10mA
= -3.5V
10
-
20
-1.5
1
-
-
-
10
-
20
-1.5
1
-
-
-
V
A
C
CE
Base to Emitter Voltage Drift
Collector to Collector Leakage
mV/°C
pA
C
-
-
Electrical Specifications
T = 25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC PNP CHARACTERISTICS
Noise Figure f = 1.0GHz, V
= -5V,
-
3.5
-
-
3.5
-
dB
CE
I
I
I
I
= -5mA, Z = 50Ω
C
C
C
C
S
f
Current Gain-Bandwidth
= -1mA, V
= -5V
-
-
-
2
5.5
3
-
-
-
-
-
-
2
5.5
2
-
-
-
GHz
GHz
GHz
T
CE
Product
= -10mA, V
= -10mA, V
= -5V
= -5V
CE
CE
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
V
V
= 3V
-
-
200
300
-
-
-
-
500
600
-
-
fF
fF
BE
= -3V
CB
FN3076.13
4
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
T
= 25°C (Continued)
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
Input Offset Current
Input Offset Voltage TC
I
I
I
= 10mA, V
= 10mA, V
= 10mA, V
= 5V
= 5V
= 5V
-
-
-
1.5
5
5.0
25
-
-
-
-
1.5
5
5.0
25
-
mV
µA
C
C
C
CE
CE
CE
0.5
0.5
µV/°C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3µm x 50µm Transistor
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
12
22
V
= 5V and I = 5mA
CE
C
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
0.83
-11.78
-22.82
-32.64
-41.08
-48.23
-54.27
-59.41
-63.81
-67.63
-70.98
-73.95
-76.62
-79.04
-81.25
-83.28
-85.17
-86.92
-88.57
-90.12
-91.59
-92.98
-94.30
-95.57
-96.78
-97.93
-99.05
11.07
10.51
9.75
8.91
8.10
7.35
6.69
6.11
5.61
5.17
4.79
4.45
4.15
3.89
3.66
3.45
3.27
3.10
2.94
2.80
2.68
2.56
2.45
2.35
2.26
2.18
2.10
2.02
1.96
1.89
168.57
157.89
148.44
140.36
133.56
127.88
123.10
119.04
115.57
112.55
109.91
107.57
105.47
103.57
101.84
100.26
98.79
1.41E-02
2.69E-02
3.75E-02
4.57E-02
5.19E-02
5.65E-02
6.00E-02
6.27E-02
6.47E-02
6.63E-02
6.75E-02
6.85E-02
6.93E-02
7.00E-02
7.05E-02
7.10E-02
7.13E-02
7.17E-02
7.19E-02
7.21E-02
7.23E-02
7.25E-02
7.27E-02
7.28E-02
7.29E-02
7.30E-02
7.31E-02
7.31E-02
7.32E-02
7.32E-02
78.88
68.63
59.58
51.90
45.50
40.21
35.82
32.15
29.07
26.45
24.19
22.24
20.53
19.02
17.69
16.49
15.41
14.43
13.54
12.73
11.98
11.29
10.64
10.05
9.49
0.97
0.93
0.86
0.79
0.73
0.67
0.62
0.57
0.53
0.50
0.47
0.45
0.43
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.35
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.33
-11.05
-21.35
-30.44
-38.16
-44.59
-49.93
-54.37
-58.10
-61.25
-63.96
-66.31
-68.37
-70.19
-71.83
-73.31
-74.66
-75.90
-77.05
-78.12
-79.13
-80.09
-80.99
-81.85
-82.68
-83.47
-84.23
-84.97
-85.68
-86.37
-87.05
0.79
0.73
0.67
0.61
0.55
0.50
0.46
0.42
0.39
0.36
0.34
0.32
0.30
0.28
0.27
0.25
0.24
0.23
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
97.43
96.15
94.95
93.81
92.73
91.70
90.72
89.78
88.87
8.96
-100.12
-101.15
-102.15
-103.11
88.00
8.47
87.15
8.01
86.33
7.57
85.54
7.16
FN3076.13
5
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of NPN 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
12
22
V
= 5V and I = 10mA
CE
1.0E+08
C
0.72
0.67
0.60
0.53
0.47
0.42
0.37
0.34
0.31
0.29
0.27
0.25
0.24
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
0.16
0.15
0.15
0.15
0.15
0.14
-16.43
-31.26
-43.76
-54.00
-62.38
-69.35
-75.26
-80.36
-84.84
-88.83
-92.44
-95.73
-98.75
15.12
13.90
12.39
10.92
9.62
8.53
7.62
6.86
6.22
5.69
5.23
4.83
4.49
4.19
3.93
3.70
3.49
3.30
3.13
2.98
2.84
2.72
2.60
2.49
2.39
2.30
2.22
2.14
2.06
1.99
165.22
152.04
141.18
132.57
125.78
120.37
116.00
112.39
109.36
106.77
104.51
102.53
100.75
99.16
97.70
96.36
95.12
93.96
92.87
91.85
90.87
89.94
89.06
88.21
87.39
86.60
85.83
85.09
84.36
83.66
1.27E-02
2.34E-02
3.13E-02
3.68E-02
4.05E-02
4.31E-02
4.49E-02
4.63E-02
4.72E-02
4.80E-02
4.86E-02
4.90E-02
4.94E-02
4.97E-02
4.99E-02
5.01E-02
5.03E-02
5.05E-02
5.06E-02
5.07E-02
5.08E-02
5.09E-02
5.10E-02
5.11E-02
5.12E-02
5.12E-02
5.13E-02
5.13E-02
5.14E-02
5.15E-02
75.41
62.89
52.58
44.50
38.23
33.34
29.47
26.37
23.84
21.75
20.00
18.52
17.25
16.15
15.19
14.34
13.60
12.94
12.34
11.81
11.33
10.89
10.50
10.13
9.80
0.95
0.88
0.79
0.70
0.63
0.57
0.51
0.47
0.44
0.41
0.39
0.37
0.35
0.34
0.33
0.32
0.31
0.31
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
-14.26
-26.95
-37.31
-45.45
-51.77
-56.72
-60.65
-63.85
-66.49
-68.71
-70.62
-72.28
-73.76
-75.08
-76.28
-77.38
-78.41
-79.37
-80.27
-81.13
-81.95
-82.74
-83.50
-84.24
-84.95
-85.64
-86.32
-86.98
-87.62
-88.25
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
-101.55
-104.15
-106.57
-108.85
-110.98
-113.00
-114.90
-116.69
-118.39
-120.01
-121.54
-122.99
-124.37
-125.69
-126.94
-128.14
-129.27
9.49
9.21
8.95
8.71
8.49
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
12
22
V
= -5V and I = -5mA
CE
1.0E+08
C
0.72
0.68
0.62
0.57
0.52
-16.65
-32.12
-45.73
-57.39
-67.32
10.11
9.44
8.57
7.68
6.86
166.77
154.69
144.40
135.95
129.11
1.66E-02
3.10E-02
4.23E-02
5.05E-02
5.64E-02
77.18
65.94
56.39
48.66
42.52
0.96
0.90
0.82
0.74
0.67
-10.76
-20.38
-28.25
-34.31
-38.81
2.0E+08
3.0E+08
4.0E+08
5.0E+08
FN3076.13
6
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
|
PHASE(S
)
|S
|
PHASE(S
123.55
118.98
115.17
111.94
109.17
106.76
104.63
102.72
101.01
99.44
)
|S
|
PHASE(S
37.66
33.79
30.67
28.14
26.06
24.33
22.89
21.67
20.64
19.76
19.00
18.35
17.79
17.30
16.88
16.52
16.20
15.92
15.68
15.48
15.30
15.15
15.01
14.90
14.81
)
|S
|
PHASE(S
-42.10
-44.47
-46.15
-47.33
-48.15
-48.69
-49.05
-49.26
-49.38
-49.43
-49.44
-49.43
-49.40
-49.38
-49.36
-49.35
-49.35
-49.38
-49.42
-49.49
-49.56
-49.67
-49.81
-49.96
-50.13
)
22
11
11
21
21
12
12
22
0.47
0.43
0.40
0.38
0.36
0.34
0.33
0.32
0.30
0.30
0.29
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.24
0.24
-75.83
6.14
5.53
5.01
4.56
4.18
3.86
3.58
3.33
3.12
2.92
2.75
2.60
2.47
2.34
2.23
2.13
2.04
1.95
1.87
1.80
1.73
1.67
1.61
1.56
1.51
6.07E-02
6.37E-02
6.60E-02
6.77E-02
6.91E-02
7.01E-02
7.09E-02
7.16E-02
7.22E-02
7.27E-02
7.32E-02
7.35E-02
7.39E-02
7.42E-02
7.45E-02
7.47E-02
7.50E-02
7.52E-02
7.55E-02
7.57E-02
7.59E-02
7.61E-02
7.63E-02
7.65E-02
7.67E-02
0.61
0.55
0.51
0.47
0.44
0.41
0.39
0.37
0.36
0.34
0.33
0.32
0.31
0.30
0.30
0.29
0.28
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.26
-83.18
-89.60
-95.26
-100.29
-104.80
-108.86
-112.53
-115.86
-118.90
-121.69
-124.24
-126.59
-128.76
-130.77
-132.63
-134.35
-135.96
-137.46
-138.86
-140.17
-141.39
-142.54
-143.62
-144.64
98.01
96.68
95.44
94.29
93.19
92.16
91.18
90.24
89.34
88.48
87.65
86.85
86.07
85.31
84.58
V
= -5V, I = -10mA
C
CE
1.0E+08
0.58
0.53
0.48
0.43
0.40
0.37
0.35
0.33
0.32
0.31
0.30
0.30
-23.24
-44.07
-61.50
-75.73
-87.36
-96.94
-104.92
-111.64
-117.36
-122.27
-126.51
-130.21
13.03
11.75
10.25
8.88
7.72
6.78
6.01
5.39
4.87
4.44
4.07
3.76
163.45
149.11
137.78
129.12
122.49
117.33
113.22
109.85
107.05
104.66
102.59
100.76
1.43E-02
2.58E-02
3.38E-02
3.90E-02
4.25E-02
4.48E-02
4.64E-02
4.76E-02
4.85E-02
4.92E-02
4.97E-02
5.02E-02
73.38
60.43
50.16
42.49
36.81
32.59
29.39
26.94
25.04
23.55
22.37
21.44
0.93
0.85
0.74
0.65
0.58
0.51
0.47
0.43
0.40
0.37
0.35
0.33
-13.46
-24.76
-33.10
-38.83
-42.63
-45.07
-46.60
-47.49
-47.97
-48.18
-48.20
-48.11
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
FN3076.13
7
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3µm x 50µm Transistor (Continued)
FREQ. (Hz)
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
|
PHASE(S
)
|S
|
PHASE(S
99.14
97.67
96.33
95.10
93.96
92.90
91.90
90.95
90.05
89.20
88.37
87.59
86.82
86.09
85.38
84.68
84.01
83.35
)
|S
|
PHASE(S
20.70
20.11
19.65
19.29
19.01
18.80
18.65
18.55
18.49
18.46
18.47
18.50
18.55
18.62
18.71
18.80
18.91
19.03
)
|S
|
PHASE(S
-47.95
-47.77
-47.58
-47.39
-47.23
-47.09
-46.98
-46.91
-46.87
-46.87
-46.90
-46.97
-47.07
-47.18
-47.34
-47.55
-47.76
-48.00
)
22
11
11
21
21
12
12
22
0.29
0.29
0.28
0.28
0.28
0.28
0.27
0.27
0.27
0.27
0.27
0.27
0.27
0.26
0.26
0.26
0.26
0.26
-133.46
-136.33
-138.89
-141.17
-143.21
-145.06
-146.73
-148.26
-149.65
-150.92
-152.10
-153.18
-154.17
-155.10
-155.96
-156.76
-157.51
-158.21
3.49
3.25
3.05
2.87
2.70
2.56
2.43
2.31
2.20
2.10
2.01
1.93
1.86
1.79
1.72
1.66
1.60
1.55
5.06E-02
5.09E-02
5.12E-02
5.15E-02
5.18E-02
5.21E-02
5.23E-02
5.26E-02
5.28E-02
5.30E-02
5.33E-02
5.35E-02
5.38E-02
5.40E-02
5.42E-02
5.45E-02
5.47E-02
5.50E-02
0.32
0.31
0.30
0.29
0.28
0.27
0.27
0.26
0.26
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.23
Typical Performance Curves
V
= 3V
100m
10m
1m
CE
I
I
= 200µA
= 160µA
25
20
15
10
5
B
I
C
B
I
B
100µ
10µ
1µ
I
=120µA
B
I
I
= 80µA
= 40µA
B
100n
10n
1n
B
0
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
BASE TO EMITTER VOLTAGE (V)
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
FN3076.13
8
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Typical Performance Curves (Continued)
10.0
8.0
6.0
4.0
2.0
0
V
= 3V
CE
V
= 5V
CE
160
140
120
100
80
V
= 1V
CE
V
= 3V
CE
60
40
20
0
1µ
10µ
100µ
1m
10m
100m
0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPNGAINBANDWIDTHPRODUCTvsCOLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
V
= -3V
-25
-100m
-10m
-1m
CE
I
= -400µA
= -320µA
= -240µA
B
I
C
I
B
-20
-15
-10
-5
I
B
I
B
B
-100µ
-10µ
-1µ
I
= -160µA
I
= -80µA
B
-100n
-10n
-1n
0
0
-1
-2
-3
-4
-5
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
COLLECTOR TO EMITTER VOLTAGE (V)
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
5.0
V
= -3V
CE
V
= -5V
= -3V
CE
4.0
3.0
2.0
1.0
160
140
120
100
80
V
CE
V
= -1V
CE
60
40
20
0
-0.1
-1.0
-10
-100
-1µ
-10µ
-100µ
-1m
-10m
-100m
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
FN3076.13
9
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
53 mils x 52 mils x 19 mils
1340µm x 1320µm x 483µm
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
METALLIZATION:
PROCESS:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2
1
16
15
3
4
5
6
14
13
12
11
1340µm
(53 mils)
7
8
9
10
1320µm
(52 mils)
HFA3046
2
1
14
13
3
12
4
5
6
1340µm
(53 mils)
11
10
9
7
8
1320µm
(52 mils)
Pad numbers correspond to SOIC pinout.
FN3076.13
10
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Small Outline Plastic Packages (SOIC)
M14.15 (JEDEC MS-012-AB ISSUE C)
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
N
INDEX
AREA
0.25(0.010)
M
B M
H
E
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
1.35
0.10
0.33
0.19
8.55
3.80
MAX
1.75
0.25
0.51
0.25
8.75
4.00
NOTES
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
0.0688
0.0098
0.020
-
1
2
3
L
-
SEATING PLANE
A
9
0.0075
0.3367
0.1497
0.0098
0.3444
0.1574
-
-A-
o
h x 45
D
3
4
-C-
α
0.050 BSC
1.27 BSC
-
e
A1
C
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
B
0.10(0.004)
5
0.25(0.010) M
C
A M B S
L
6
N
α
14
14
7
NOTES:
0°
8°
0°
8°
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Rev. 0 12/93
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension“E”doesnotincludeinterleadflashorprotrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
FN3076.13
11
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
N
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
0.25(0.010)
M
B M
H
INCHES
MILLIMETERS
E
SYMBOL
MIN
MAX
0.0688
0.0098
0.020
MIN
1.35
0.10
0.33
0.19
9.80
3.80
MAX
1.75
NOTES
-B-
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
-
1
2
3
0.25
-
L
0.51
9
SEATING PLANE
A
0.0075
0.3859
0.1497
0.0098
0.3937
0.1574
0.25
-
-A-
10.00
4.00
3
h x 45°
D
4
-C-
0.050 BSC
1.27 BSC
-
α
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
e
A1
C
5
B
0.10(0.004)
L
6
0.25(0.010) M
C
A M B S
N
α
16
16
7
0°
8°
0°
8°
-
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Rev. 1 6/05
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
FN3076.13
12
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Quad Flat No-Lead Plastic Package (QFN)
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Micro Lead Frame Plastic Package (MLFP)
2X
MILLIMETERS
0.15
C A
D
A
SYMBOL
MIN
NOMINAL
MAX
1.00
0.05
1.00
NOTES
9
D/2
A
A1
A2
A3
b
0.80
0.90
-
D1
-
-
-
-
-
9
D1/2
2X
N
0.15 C
B
0.20 REF
9
6
INDEX
AREA
0.18
1.35
1.35
0.23
0.30
1.65
1.65
5, 8
1
2
3
E1/2
E/2
9
D
3.00 BSC
-
E1
E
B
D1
D2
E
2.75 BSC
9
1.50
7, 8, 10
2X
3.00 BSC
-
0.15 C
B
2X
E1
E2
e
2.75 BSC
9
TOP VIEW
SIDE VIEW
0.15 C
A
1.50
7, 8, 10
0
A2
4X
0.50 BSC
-
A
/ /
0.10 C
0.08 C
C
k
0.20
0.30
-
0.40
16
4
-
-
L
0.50
8
SEATING PLANE
A3 A1
N
2
9
Nd
Ne
P
3
5
NX b
D2
D2
4
3
0.10 M C A B
4X P
-
-
-
0.60
12
9
8
7
NX k
θ
-
9
(DATUM B)
2
N
Rev. 1 6/04
4X P
NOTES:
1
(DATUM A)
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
2
(Ne-1)Xe
REF.
3
E2
6
INDEX
AREA
7
8
E2/2
NX L
8
5. Dimension b applies to the metallized terminal and is measured
N
e
9
between 0.15mm and 0.30mm from the terminal tip.
CORNER
(Nd-1)Xe
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
REF.
OPTION 4X
BOTTOM VIEW
A1
7. Dimensions D2 and E2 are for the exposed pads which provide
NX b
5
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land
Pattern Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
SECTION "C-C"
C
L
C
L
10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2
L
L
10
10
and D2 MAX dimension.
L1
L1
e
e
C
C
TERMINAL TIP
FOR ODD TERMINAL/SIDE
FOR EVEN TERMINAL/SIDE
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN3076.13
13
December 21, 2005
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