HFA3096BZ [RENESAS]
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16;
| 型号： | HFA3096BZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16 放大器 PC 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATASHEET
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
FN3076
Rev 15.00
August 11, 2015
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
Features
• NPN Transistor (f ) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
T
• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . . 130
FE
• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 50V
A
transistors exhibit a f of 8GHz while the PNP transistors
T
• PNP Transistor (f ). . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
T
provide a f of 5.5GHz. Both types exhibit low noise (3.5dB),
T
making them ideal for high frequency amplifier and mixer
applications.
• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . . . . . . 60
FE
• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . .20V
A
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
Arrays
• Pb-Free (RoHS Compliant)
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Ordering Information
PART NUMBER
(Note)
PART
MARKING
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
HFA3046BZ
HFA3046BZ
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
14 Ld SOIC
M14.15
M16.15
M16.15
HFA3096BZ*
HFA3127BZ*
HFA3127RZ*
HFA3096BZ
HFA3127BZ
127Z
16 Ld SOIC
16 Ld SOIC
16 Ld 3x3 QFN
16 Ld SOIC
L16.3x3
M16.15
HFA3128BZ (No longer
available or supported)
HFA3128BZ
HFA3128RZ (No longer
available or supported)
128Z
-55 to +125
16 Ld 3x3 QFN
L16.3x3
*Add “96” suffix for tape and reel.
NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100%
matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations).
Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J
STD-020.
FN3076 Rev 15.00
August 11, 2015
Page 1 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Pinouts
HFA3046
(14 LD SOIC)
TOP VIEW
HFA3096
(16 LD SOIC)
TOP VIEW
HFA3127
(16 LD SOIC)
TOP VIEW
HFA3128
(16 LD SOIC)
TOP VIEW
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
Q
1
Q
1
Q
1
Q
1
Q
5
Q
Q
5
4
Q
Q
5
Q
Q
Q
2
2
5
4
Q
2
Q
Q
2
NC
NC
Q
4
Q
Q
Q
3
4
3
3
8
Q
3
HFA3127, HFA3128
(16 LD 3X3 QFN)
TOP VIEW
16 15 14 13
Q2E
Q2B
NC
1
12 Q5B
11 Q5E
2
3
4
10
9
Q5C
Q4C
Q3C
5
6
7
8
FN3076 Rev 15.00
August 11, 2015
Page 2 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Thermal Resistance (Typical)
(°C/W)
(°C/W)
JC
JA
14 Ld SOIC Package (Note 1) . . . . . . .
16 Ld SOIC Package (Note 1) . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . +175°C
Maximum Junction Temperature (Plastic Package) . . . . . . +150°C
Maximum Storage Temperature Range. . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profilesee link below
120
115
57
N/A
N/A
10
Collector Current (100% Duty Cycle) . . . . . 18.5mA at T = +150°C
J
34mA at T = +125°C
J
37mA at T = +110°C
J
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. is measured with the component mounted on an evaluation PC board in free air.
JA
2. For , the “case temp” location is the center of the exposed metal pad on the package underside.
JC
3. is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
Electrical Specifications
T = +25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC NPN CHARACTERISTICS
Collector to Base Breakdown
I
= 100µA, I = 0
12
8
18
12
20
6
-
-
-
-
12
8
18
12
20
6
-
-
-
-
V
V
V
V
C
C
C
E
E
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
I
I
I
= 100µA, I = 0
B
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
= 100µA, Base Shorted to Emitter
10
5.5
10
5.5
(BR)CES
Emitter to Base Breakdown
Voltage, V
= 10µA, I = 0
C
(BR)EBO
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
V
V
= 6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
= 8V, I = 0
0.1
0.3
0.1
0.3
E
Collector to Emitter Saturation
Voltage, V
I
= 10mA, I = 1mA
B
0.5
0.5
C
CE(SAT)
Base to Emitter Voltage, V
I
I
= 10mA
-
0.85
130
0.95
-
-
0.85
130
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
C
= 10mA, V
CE
= 2V
40
40
FE
Early Voltage, V
I
I
= 1mA, V
= 10mA
= 3.5V
CE
20
-
50
-1.5
1
-
-
-
20
-
50
-1.5
1
-
-
-
V
A
C
C
Base to Emitter Voltage Drift
Collector to Collector Leakage
mV/°C
pA
-
-
Electrical Specifications
T = +25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC NPN CHARACTERISTICS
Noise Figure f = 1.0GHz, V
= 5V,
-
3.5
-
-
3.5
-
dB
CE
I
I
I
= 5mA, Z = 50
C
C
C
S
f
Current Gain-Bandwidth
= 1mA, V
= 5V
-
-
5.5
8
-
-
-
-
5.5
8
-
-
GHz
GHz
T
CE
Product
= 10mA, V
CE
= 5V
FN3076 Rev 15.00
August 11, 2015
Page 3 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
T = +25°C (Continued)
A
DIE
TYP
6
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
Power Gain-Bandwidth Product,
I
= 10mA, V
= 5V
-
-
-
2.5
-
GHz
C
CE
f
MAX
Base to Emitter Capacitance
Collector to Base Capacitance
V
V
= -3V
= 3V
-
-
200
200
-
-
-
-
500
500
-
-
fF
fF
BE
CB
Electrical Specifications
T = +25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DC PNP CHARACTERISTICS
Collector to Base Breakdown
I
= -100µA, I = 0
10
8
15
15
15
5
-
-
-
-
10
8
15
15
15
5
-
-
-
-
V
V
V
V
C
C
C
E
E
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
I
I
I
= -100µA, I = 0
B
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
= -100µA, Base Shorted to Emitter
10
4.5
10
4.5
(BR)CES
Emitter to Base Breakdown
Voltage, V
= -10µA, I = 0
C
(BR)EBO
Collector Cutoff Current, I
Collector Cutoff Current, I
V
V
= -6V, I = 0
-
-
-
2
100
10
-
-
-
2
100
10
nA
nA
V
CEO
CBO
CE
CB
B
= -8V, I = 0
0.1
0.3
0.1
0.3
E
Collector to Emitter Saturation
Voltage, V
I
= -10mA, I = -1mA
B
0.5
0.5
C
CE(SAT)
Base to Emitter Voltage, V
I
I
= -10mA
-
0.85
60
0.95
-
-
0.85
60
0.95
-
V
BE
DC Forward-Current Transfer
Ratio, h
C
C
= -10mA, V
= -2V
20
20
CE
FE
Early Voltage, V
I
I
= -1mA, V
= -10mA
= -3.5V
CE
10
-
20
-1.5
1
-
-
-
10
-
20
-1.5
1
-
-
-
V
A
C
C
Base to Emitter Voltage Drift
Collector to Collector Leakage
mV/°C
pA
-
-
Electrical Specifications
T = +25°C
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DYNAMIC PNP CHARACTERISTICS
Noise Figure f = 1.0GHz, V
= -5V,
-
3.5
-
-
3.5
-
dB
CE
I
I
I
I
= -5mA, Z = 50
C
C
C
C
S
f
Current Gain-Bandwidth
= -1mA, V
= -5V
-
-
-
2
5.5
3
-
-
-
-
-
-
2
5.5
2
-
-
-
GHz
GHz
GHz
T
CE
Product
= -10mA, V
= -10mA, V
= -5V
= -5V
CE
CE
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
V
V
= 3V
-
-
200
300
-
-
-
-
500
600
-
-
fF
fF
BE
CB
= -3V
FN3076 Rev 15.00
August 11, 2015
Page 4 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
T = +25°C (Continued)
A
DIE
SOIC, QFN
TYP
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
Input Offset Current
Input Offset Voltage TC
I
I
I
= 10mA, V
= 10mA, V
= 10mA, V
= 5V
= 5V
= 5V
-
-
-
1.5
5
5.0
25
-
-
-
-
1.5
5
5.0
25
-
mV
µA
C
C
C
CE
CE
CE
0.5
0.5
µV/°C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
12
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
22
V
= 5V and I = 5mA
CE
C
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
0.83
-11.78
-22.82
-32.64
-41.08
-48.23
-54.27
-59.41
-63.81
-67.63
-70.98
-73.95
-76.62
-79.04
-81.25
-83.28
-85.17
-86.92
-88.57
-90.12
-91.59
-92.98
-94.30
-95.57
-96.78
-97.93
-99.05
11.07
10.51
9.75
8.91
8.10
7.35
6.69
6.11
5.61
5.17
4.79
4.45
4.15
3.89
3.66
3.45
3.27
3.10
2.94
2.80
2.68
2.56
2.45
2.35
2.26
2.18
2.10
2.02
1.96
1.89
168.57
157.89
148.44
140.36
133.56
127.88
123.10
119.04
115.57
112.55
109.91
107.57
105.47
103.57
101.84
100.26
98.79
1.41E-02
2.69E-02
3.75E-02
4.57E-02
5.19E-02
5.65E-02
6.00E-02
6.27E-02
6.47E-02
6.63E-02
6.75E-02
6.85E-02
6.93E-02
7.00E-02
7.05E-02
7.10E-02
7.13E-02
7.17E-02
7.19E-02
7.21E-02
7.23E-02
7.25E-02
7.27E-02
7.28E-02
7.29E-02
7.30E-02
7.31E-02
7.31E-02
7.32E-02
7.32E-02
78.88
68.63
59.58
51.90
45.50
40.21
35.82
32.15
29.07
26.45
24.19
22.24
20.53
19.02
17.69
16.49
15.41
14.43
13.54
12.73
11.98
11.29
10.64
10.05
9.49
0.97
0.93
0.86
0.79
0.73
0.67
0.62
0.57
0.53
0.50
0.47
0.45
0.43
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.35
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.33
-11.05
-21.35
-30.44
-38.16
-44.59
-49.93
-54.37
-58.10
-61.25
-63.96
-66.31
-68.37
-70.19
-71.83
-73.31
-74.66
-75.90
-77.05
-78.12
-79.13
-80.09
-80.99
-81.85
-82.68
-83.47
-84.23
-84.97
-85.68
-86.37
-87.05
0.79
0.73
0.67
0.61
0.55
0.50
0.46
0.42
0.39
0.36
0.34
0.32
0.30
0.28
0.27
0.25
0.24
0.23
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
97.43
96.15
94.95
93.81
92.73
91.70
90.72
89.78
88.87
8.96
-100.12
-101.15
-102.15
-103.11
88.00
8.47
87.15
8.01
86.33
7.57
85.54
7.16
FN3076 Rev 15.00
August 11, 2015
Page 5 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of NPN 3µm x 50 µm Transistor (Continued)
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
12
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
22
V
= 5V and I = 10mA
CE
1.0E+08
C
0.72
0.67
0.60
0.53
0.47
0.42
0.37
0.34
0.31
0.29
0.27
0.25
0.24
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
0.16
0.15
0.15
0.15
0.15
0.14
-16.43
-31.26
-43.76
-54.00
-62.38
-69.35
-75.26
-80.36
-84.84
-88.83
-92.44
-95.73
-98.75
15.12
13.90
12.39
10.92
9.62
8.53
7.62
6.86
6.22
5.69
5.23
4.83
4.49
4.19
3.93
3.70
3.49
3.30
3.13
2.98
2.84
2.72
2.60
2.49
2.39
2.30
2.22
2.14
2.06
1.99
165.22
152.04
141.18
132.57
125.78
120.37
116.00
112.39
109.36
106.77
104.51
102.53
100.75
99.16
97.70
96.36
95.12
93.96
92.87
91.85
90.87
89.94
89.06
88.21
87.39
86.60
85.83
85.09
84.36
83.66
1.27E-02
2.34E-02
3.13E-02
3.68E-02
4.05E-02
4.31E-02
4.49E-02
4.63E-02
4.72E-02
4.80E-02
4.86E-02
4.90E-02
4.94E-02
4.97E-02
4.99E-02
5.01E-02
5.03E-02
5.05E-02
5.06E-02
5.07E-02
5.08E-02
5.09E-02
5.10E-02
5.11E-02
5.12E-02
5.12E-02
5.13E-02
5.13E-02
5.14E-02
5.15E-02
75.41
62.89
52.58
44.50
38.23
33.34
29.47
26.37
23.84
21.75
20.00
18.52
17.25
16.15
15.19
14.34
13.60
12.94
12.34
11.81
11.33
10.89
10.50
10.13
9.80
0.95
0.88
0.79
0.70
0.63
0.57
0.51
0.47
0.44
0.41
0.39
0.37
0.35
0.34
0.33
0.32
0.31
0.31
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
-14.26
-26.95
-37.31
-45.45
-51.77
-56.72
-60.65
-63.85
-66.49
-68.71
-70.62
-72.28
-73.76
-75.08
-76.28
-77.38
-78.41
-79.37
-80.27
-81.13
-81.95
-82.74
-83.50
-84.24
-84.95
-85.64
-86.32
-86.98
-87.62
-88.25
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
-101.55
-104.15
-106.57
-108.85
-110.98
-113.00
-114.90
-116.69
-118.39
-120.01
-121.54
-122.99
-124.37
-125.69
-126.94
-128.14
-129.27
9.49
9.21
8.95
8.71
8.49
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
FREQ. (Hz)
|S
|
PHASE(S
)
|S
|
PHASE(S
)
|S
12
|
PHASE(S
)
|S
|
PHASE(S
)
22
11
11
21
21
12
22
V
= -5V and I = -5mA
CE
1.0E+08
C
0.72
0.68
0.62
0.57
0.52
-16.65
-32.12
-45.73
-57.39
-67.32
10.11
9.44
8.57
7.68
6.86
166.77
154.69
144.40
135.95
129.11
1.66E-02
3.10E-02
4.23E-02
5.05E-02
5.64E-02
77.18
65.94
56.39
48.66
42.52
0.96
0.90
0.82
0.74
0.67
-10.76
-20.38
-28.25
-34.31
-38.81
2.0E+08
3.0E+08
4.0E+08
5.0E+08
FN3076 Rev 15.00
August 11, 2015
Page 6 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued)
FREQ. (Hz)
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
|
PHASE(S
)
|S
|
PHASE(S
123.55
118.98
115.17
111.94
109.17
106.76
104.63
102.72
101.01
99.44
)
|S
12
|
PHASE(S
37.66
33.79
30.67
28.14
26.06
24.33
22.89
21.67
20.64
19.76
19.00
18.35
17.79
17.30
16.88
16.52
16.20
15.92
15.68
15.48
15.30
15.15
15.01
14.90
14.81
)
|S
|
PHASE(S
-42.10
-44.47
-46.15
-47.33
-48.15
-48.69
-49.05
-49.26
-49.38
-49.43
-49.44
-49.43
-49.40
-49.38
-49.36
-49.35
-49.35
-49.38
-49.42
-49.49
-49.56
-49.67
-49.81
-49.96
-50.13
)
22
11
11
21
21
12
22
0.47
0.43
0.40
0.38
0.36
0.34
0.33
0.32
0.30
0.30
0.29
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.24
0.24
-75.83
6.14
5.53
5.01
4.56
4.18
3.86
3.58
3.33
3.12
2.92
2.75
2.60
2.47
2.34
2.23
2.13
2.04
1.95
1.87
1.80
1.73
1.67
1.61
1.56
1.51
6.07E-02
6.37E-02
6.60E-02
6.77E-02
6.91E-02
7.01E-02
7.09E-02
7.16E-02
7.22E-02
7.27E-02
7.32E-02
7.35E-02
7.39E-02
7.42E-02
7.45E-02
7.47E-02
7.50E-02
7.52E-02
7.55E-02
7.57E-02
7.59E-02
7.61E-02
7.63E-02
7.65E-02
7.67E-02
0.61
0.55
0.51
0.47
0.44
0.41
0.39
0.37
0.36
0.34
0.33
0.32
0.31
0.30
0.30
0.29
0.28
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.26
-83.18
-89.60
-95.26
-100.29
-104.80
-108.86
-112.53
-115.86
-118.90
-121.69
-124.24
-126.59
-128.76
-130.77
-132.63
-134.35
-135.96
-137.46
-138.86
-140.17
-141.39
-142.54
-143.62
-144.64
98.01
96.68
95.44
94.29
93.19
92.16
91.18
90.24
89.34
88.48
87.65
86.85
86.07
85.31
84.58
V
= -5V, I = -10mA
C
CE
1.0E+08
0.58
0.53
0.48
0.43
0.40
0.37
0.35
0.33
0.32
0.31
0.30
0.30
-23.24
-44.07
-61.50
-75.73
-87.36
-96.94
-104.92
-111.64
-117.36
-122.27
-126.51
-130.21
13.03
11.75
10.25
8.88
7.72
6.78
6.01
5.39
4.87
4.44
4.07
3.76
163.45
149.11
137.78
129.12
122.49
117.33
113.22
109.85
107.05
104.66
102.59
100.76
1.43E-02
2.58E-02
3.38E-02
3.90E-02
4.25E-02
4.48E-02
4.64E-02
4.76E-02
4.85E-02
4.92E-02
4.97E-02
5.02E-02
73.38
60.43
50.16
42.49
36.81
32.59
29.39
26.94
25.04
23.55
22.37
21.44
0.93
0.85
0.74
0.65
0.58
0.51
0.47
0.43
0.40
0.37
0.35
0.33
-13.46
-24.76
-33.10
-38.83
-42.63
-45.07
-46.60
-47.49
-47.97
-48.18
-48.20
-48.11
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
FN3076 Rev 15.00
August 11, 2015
Page 7 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued)
FREQ. (Hz)
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
|S
|
PHASE(S
11
)
|S
|
PHASE(S
99.14
97.67
96.33
95.10
93.96
92.90
91.90
90.95
90.05
89.20
88.37
87.59
86.82
86.09
85.38
84.68
84.01
83.35
)
|S
12
|
PHASE(S
20.70
20.11
19.65
19.29
19.01
18.80
18.65
18.55
18.49
18.46
18.47
18.50
18.55
18.62
18.71
18.80
18.91
19.03
)
|S
|
PHASE(S
-47.95
-47.77
-47.58
-47.39
-47.23
-47.09
-46.98
-46.91
-46.87
-46.87
-46.90
-46.97
-47.07
-47.18
-47.34
-47.55
-47.76
-48.00
)
22
11
21
21
12
22
0.29
0.29
0.28
0.28
0.28
0.28
0.27
0.27
0.27
0.27
0.27
0.27
0.27
0.26
0.26
0.26
0.26
0.26
-133.46
-136.33
-138.89
-141.17
-143.21
-145.06
-146.73
-148.26
-149.65
-150.92
-152.10
-153.18
-154.17
-155.10
-155.96
-156.76
-157.51
-158.21
3.49
3.25
3.05
2.87
2.70
2.56
2.43
2.31
2.20
2.10
2.01
1.93
1.86
1.79
1.72
1.66
1.60
1.55
5.06E-02
5.09E-02
5.12E-02
5.15E-02
5.18E-02
5.21E-02
5.23E-02
5.26E-02
5.28E-02
5.30E-02
5.33E-02
5.35E-02
5.38E-02
5.40E-02
5.42E-02
5.45E-02
5.47E-02
5.50E-02
0.32
0.31
0.30
0.29
0.28
0.27
0.27
0.26
0.26
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.23
Typical Performance Curves
V
= 3V
100m
10m
1m
CE
I
I
= 200µA
= 160µA
25
20
15
10
5
B
I
C
B
I
B
100
10
1
I
=120µA
B
I
I
= 80µA
= 40µA
B
100n
10n
1n
B
0
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
BASE TO EMITTER VOLTAGE (V)
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
FN3076 Rev 15.00
August 11, 2015
Page 8 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Typical Performance Curves (Continued)
10.0
8.0
6.0
4.0
2.0
0
V
= 3V
CE
V
= 5V
CE
160
140
120
100
80
V
= 1V
CE
V
= 3V
CE
60
40
20
0
1
10
100
1m
10m
100m
0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPNGAINBANDWIDTHPRODUCTvsCOLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
V
= -3V
-25
-100m
-10m
-1m
CE
I
= -400µA
= -320µA
= -240µA
B
I
C
I
B
-20
-15
-10
-5
I
B
I
B
B
-100
-10
-1
I
= -160µA
I
= -80µA
B
-100n
-10n
-1n
0
0
-1
-2
-3
-4
-5
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
COLLECTOR TO EMITTER VOLTAGE (V)
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
5.0
V
= -3V
CE
V
= -5V
= -3V
CE
4.0
3.0
2.0
1.0
160
140
120
100
80
V
CE
V
= -1V
CE
60
40
20
0
-1
-0.1
-1.0
-10
-100
-10
-100
-1m
-10m
-100m
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
FN3076 Rev 15.00
August 11, 2015
Page 9 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
53 mils x 52 mils
Type: Nitride
1340µm x 1320µm
Thickness: 4kÅ 0.5kÅ
METALLIZATION:
PROCESS:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ 0.4kÅ
Type: Metal 2: AlCu(2%)
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2
1
16
15
3
4
5
6
14
13
12
11
1340µm
(53 mils)
7
8
9
10
1320µm
(52 mils)
HFA3046
2
1
14
13
3
12
4
5
6
1340µm
(53 mils)
11
10
9
7
8
1320µm
(52 mils)
Pad numbers correspond to SOIC pinout.
FN3076 Rev 15.00
August 11, 2015
Page 10 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make
sure that you have the latest revision.
DATE
REVISION
CHANGE
August 11, 2015
FN3076.15
Added Revision History beginning with Rev 15.
Updated ordering information table with “No longer available or supported” next to HFA3128 part numbers
About Intersil
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of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page
found at www.intersil.com.
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Reliability reports are also available from our website at www.intersil.com/support
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
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For information regarding Intersil Corporation and its products, see www.intersil.com
FN3076 Rev 15.00
August 11, 2015
Page 11 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Package Outline Drawing
M14.15
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 1, 10/09
4
0.10 C A-B 2X
8.65
A
3
6
DETAIL"A"
0.22±0.03
D
14
8
6.0
3.9
4
0.10 C D 2X
0.20 C 2X
7
PIN NO.1
ID MARK
(0.35) x 45°
4° ± 4°
5
0.31-0.51
0.25M C A-B D
B
3
6
TOP VIEW
0.10 C
H
1.75 MAX
1.25 MIN
0.25
GAUGE PLANE
SEATING PLANE
C
0.10-0.25
1.27
0.10 C
SIDE VIEW
DETAIL "A"
(1.27)
(0.6)
NOTES:
1. Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSEY14.5m-1994.
3. Datums A and B to be determined at Datum H.
(5.40)
4. Dimension does not include interlead flash or protrusions.
Interlead flash or protrusions shall not exceed 0.25mm per side.
5. The pin #1 indentifier may be either a mold or mark feature.
6. Does not include dambar protrusion. Allowable dambar protrusion
shall be 0.10mm total in excess of lead width at maximum condition.
(1.50)
7. Reference to JEDEC MS-012-AB.
TYPICAL RECOMMENDED LAND PATTERN
FN3076 Rev 15.00
August 11, 2015
Page 12 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
N
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
0.25(0.010)
M
B M
H
INCHES
MILLIMETERS
E
SYMBOL
MIN
MAX
0.0688
0.0098
0.020
MIN
1.35
0.10
0.33
0.19
9.80
3.80
MAX
1.75
NOTES
-B-
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
-
1
2
3
0.25
-
L
0.51
9
SEATING PLANE
A
0.0075
0.3859
0.1497
0.0098
0.3937
0.1574
0.25
-
-A-
10.00
4.00
3
h x 45°
D
4
-C-
0.050 BSC
1.27 BSC
-
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
e
A1
C
5
B
0.10(0.004)
L
6
0.25(0.010) M
C
A M B S
N
16
16
7
0°
8°
0°
8°
-
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
FN3076 Rev 15.00
August 11, 2015
Page 13 of 14
HFA3046, HFA3096, HFA3127, HFA3128
Package Outline Drawing
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 2, 4/07
4X
1.5
3.00
0.50
12X
A
6
B
PIN #1 INDEX AREA
16
13
6
PIN 1
INDEX AREA
1
12
1 .50 ± 0 . 15
9
4
(4X)
0.15
5
8
0.10 M C A B
+ 0.07
4
TOP VIEW
16X 0.23
- 0.05
16X 0.40 ± 0.10
BOTTOM VIEW
SEE DETAIL "X"
C
0.10
C
0 . 90 ± 0.1
BASE PLANE
( 2. 80 TYP )
(
SEATING PLANE
0.08 C
SIDE VIEW
1. 50 )
( 12X 0 . 5 )
( 16X 0 . 23 )
( 16X 0 . 60)
5
C
0 . 2 REF
0 . 00 MIN.
0 . 05 MAX.
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES:
1. Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3.
Unless otherwise specified, tolerance : Decimal ± 0.05
4. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
Tiebar shown (if present) is a non-functional feature.
5.
6.
The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 indentifier may be
either a mold or mark feature.
FN3076 Rev 15.00
August 11, 2015
Page 14 of 14
相关型号：
HFA3096BZ-T
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16
RENESAS
HFA3096BZ96
5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC, ROHS COMPLIANT, PLASTIC, SOIC-16
RENESAS
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