HFA1212MJ/883 [INTERSIL]

Dual, High Speed, Low Power, Video Closed Loop Buffer; 双通道,高速,低功耗,视频闭环缓冲器
HFA1212MJ/883
型号: HFA1212MJ/883
厂家: Intersil    Intersil
描述:

Dual, High Speed, Low Power, Video Closed Loop Buffer
双通道,高速,低功耗,视频闭环缓冲器

放大器
文件: 总5页 (文件大小:38K)
中文:  中文翻译
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HFA1212/883  
PRELIMINARY  
June 1994  
Dual, High Speed, Low Power,  
Video Closed Loop Buffer  
Features  
Description  
• This Circuit is Processed in Accordance to MIL-STD- The HFA1212/883 is a dual closed loop Buffer featuring user  
883 and is Fully Conformant Under the Provisions of programmable gain and high speed performance. Manufac-  
Paragraph 1.2.1.  
tured on Intersil’s proprietary complementary bipolar UHF-1  
process, this device offers wide -3dB bandwidth of 340MHz,  
very fast slew rate, excellent gain flatness and high output  
current.  
• User Programmable For Closed-Loop Gains of +1, -1  
or +2 Without Use of External Resistors  
• Standard Operational Amplifier Pinout  
A unique feature of the pinout allows the user to select a volt-  
age gain of +1, -1, or +2, without the use of any external  
components. Gain selection is accomplished via connec-  
tions to the inputs, as described in the “Application Informa-  
tion” section. The result is a more flexible product, fewer part  
types in inventory, and more efficient use of board space.  
• Low Supply Current. . . . . . . . . . 5.9mA/Op Amp (Typ)  
• Excellent Gain Accuracy. . . . . . . . . . . . . .0.99V/V (Typ)  
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 340MHz (Typ)  
• Fast Slew Rate . . . . . . . . . . . . . . . . . . . . 1155V/µs (Typ)  
• High Input Impedance . . . . . . . . . . . . . . . . . . 1M(Typ)  
• Excellent Gain Flatness (to 50MHz) . . . . ±0.02dB (Typ)  
• Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)  
Compatibility with existing op amp pinouts provides flexibility to  
upgrade low gain amplifiers, while decreasing component  
count. Unlike most buffers, the standard pinout provides an  
upgrade path should a higher closed loop gain be needed at a  
future date.  
Applications  
Ordering Information  
• Flash A/D Driver  
TEMPERATURE  
• Video Switching and Routing  
• Pulse and Video Amplifiers  
• Wideband Amplifiers  
• RF/IF Signal Processing  
• Medical Imaging Systems  
PART NUMBER  
RANGE  
PACKAGE  
o
o
HFA1212MJ/883  
-55 C to +125 C  
8 Lead CerDIP  
Pinout  
HFA1212/883  
(CERDIP)  
TOP VIEW  
OUT1  
-IN1  
+IN1  
V-  
1
2
3
4
8
7
6
5
V+  
+
-
OUT2  
-IN2  
+IN2  
+
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 511111-883  
File Number 3742  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
3-219  
Specifications HFA1212/883  
Absolute Maximum Ratings  
Thermal Information  
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V  
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-  
Output Current (Note 1) . . . . . . . . . . . . . . . . Short Circuit Protected  
Output Current (50% Duty Cycle, Note 1) . . . . . . . . . . . . . . . .60mA  
Thermal Resistance  
CerDIP Package . . . . . . . . . . . . . . . . . 115 C/W  
Maximum Package Power Dissipation at +75 C  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W  
Package Power Dissipation Derating Factor above +75 C  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/ C  
θ
θ
JC  
30 C/W  
JA  
o
o
o
o
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
o
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .> 2000V  
o
o
Storage Temperature Range . . . . . . . . . . . . . . -65 C T +150 C  
A
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
Operating V  
(±V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V  
R 50Ω  
L
SUPPLY  
S
o
o
Operating Temperature Range. . . . . . . . . . . . .-55 C T +125 C  
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
= ±5V, A = +1, R = 0, R = 100, V = 0V, Unless Otherwise Specified.  
Device Tested at: V  
SUPPLY  
V
SOURCE  
L
OUT  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
= 0V  
SUBGROUPS  
TEMPERATURE  
MIN  
MAX  
10  
UNITS  
mV  
o
Output Offset  
Voltage  
V
V
V
1
+25 C  
-10  
-20  
-15  
-30  
OS  
CM  
CM  
o
o
2, 3  
1
+125 C, -55 C  
20  
mV  
o
Channel-to-Channel  
Output Offset  
Voltage Mismatch  
V  
= 0V  
+25 C  
15  
mV  
OS  
o
o
2, 3  
+125 C, -55 C  
30  
mV  
o
Common Mode  
Rejection Ratio  
CMRR  
V  
= ±1.8V  
1
2
+25 C  
42  
39  
-
-
dB  
dB  
CM  
V+ = 3.2V, V- = -6.8V  
V+ = 6.8V, V- = -3.2V  
o
+125 C  
o
V  
= ±1.2V  
3
-55 C  
39  
-
dB  
CM  
V+ = 3.8V, V- = -6.2V  
V+ = 6.2V, V- = -3.8V  
o
Power Supply  
Rejection Ratio  
PSRRP V  
= ±1.8V  
1
2
+25 C  
45  
42  
-
-
dB  
dB  
SUPPLY  
V+ = 6.8V, V- = -5V  
V+ = 3.2V, V- = -5V  
o
+125 C  
o
V  
= ±1.2V  
3
-55 C  
42  
-
dB  
SUPPLY  
V+ = 6.2V, V- = -5V  
V+ = 3.8V, V- = -5V  
o
PSRRN V  
= ±1.8V  
1
2
+25 C  
45  
42  
-
-
dB  
dB  
SUPPLY  
V+ = 5V, V- = -6.8V  
V+ = 5V, V- = -3.2V  
o
+125 C  
o
V  
= ±1.2V  
3
-55 C  
42  
-
dB  
SUPPLY  
V+ = 5V, V- = -6.2V  
V+ = 5V, V- = -3.8V  
o
Non-Inverting Input  
(+IN) Current  
I
V
= 0V  
1
+25 C  
-15  
-25  
-15  
-25  
15  
25  
15  
25  
µA  
µA  
µA  
µA  
BSP  
CM  
CM  
o
o
2, 3  
1
+125 C, -55 C  
o
Channel-to-Channel  
+IN Current  
Mismatch  
I  
V
= 0V  
+25 C  
BSP  
o
o
2, 3  
+125 C, -55 C  
Spec Number 511111-883  
3-220  
Specifications HFA1212/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: V  
= ±5V, A = +1, R  
= 0, R = 100, V  
= 0V, Unless Otherwise Specified.  
SUPPLY  
V
SOURCE  
L
OUT  
LIMITS  
MIN  
GROUP A  
SUBGROUPS  
PARAMETERS  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MAX  
1.25  
2.85  
UNITS  
µA/V  
o
+IN Current Common CMS  
Mode Sensitivity  
V  
= ±1.8V  
V+ = 3.2V, V- = -6.8V  
V+ = 6.8V, V- = -3.2V  
1
2
+25 C  
-
-
IBP  
CM  
o
+125 C  
µA/V  
o
V  
= ±1.2V  
3
-55 C  
-
2.85  
µA/V  
CM  
V+ = 3.8V, V- = -6.2V  
V+ = 6.2V, V- = -3.8V  
o
+IN Resistance  
Gain  
+R  
Note 2  
1
2, 3  
1
+25 C  
800  
350  
0.98  
0.975  
-0.98  
-0.975  
1.96  
1.95  
-0.02  
-0.025  
-0.025  
-0.025  
-0.04  
-0.05  
3
-
-
kΩ  
kΩ  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V/V  
V
IN  
o
o
+125 C, -55 C  
o
A
A = +1  
+25 C  
1.02  
1.025  
-1.02  
-1.025  
2.04  
2.05  
0.02  
0.025  
0.025  
0.025  
0.04  
0.05  
-
VP1  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
A
A = -1  
+25 C  
VM1  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
A
A = +2  
+25 C  
VP2  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
Channel-to-Channel  
Gain Mismatch  
A  
A = +1  
+25 C  
VP1  
VM1  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
A  
A = -1  
+25 C  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
A  
A = +2  
+25 C  
VP2  
V
V
= -1V to +1V  
IN  
o
o
2, 3  
1
+125 C, -55 C  
o
Output Voltage  
Swing  
V
A = -1  
V
V
V
V
V
V
V
V
= -3.2V  
= -3V  
+25 C  
OP100  
ON100  
V
IN  
IN  
IN  
IN  
IN  
IN  
IN  
IN  
IN  
R = 100Ω  
L
o
o
2, 3  
1
+125 C, -55 C  
2.8  
-
V
o
V
A = -1  
=+3.2V  
= +3V  
+25 C  
-
-3  
V
V
R = 100Ω  
L
o
o
2, 3  
1
+125 C, -55 C  
-
-2.8  
-
V
o
Output Voltage  
Swing  
V
A = -1  
= -2.7V  
= -2.25V  
= -2.25V  
= +2.7V  
= +2.25  
+25 C  
2.5  
V
OP50  
V
R = 50Ω  
L
o
2
+125 C  
2.0  
-
V
o
3
-55 C  
1.4  
-
V
o
V
A = -1  
1
+25 C  
-
-2.5  
-2.0  
V
ON50  
V
R = 50Ω  
L
o
V
V
2
+125 C  
-
V
o
V
V
= +2.25  
3
-55 C  
-
-1.4  
V
IN  
Spec Number 511111-883  
3-221  
Specifications HFA1212/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: V  
= ±5V, A = +1, R  
= 0, R = 100, V  
= 0V, Unless Otherwise Specified.  
SUPPLY  
V
SOURCE  
L
OUT  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
Note 3  
SUBGROUPS  
TEMPERATURE  
MIN  
MAX  
-
UNITS  
mA  
o
Output Current  
+I  
1
2
+25 C  
50  
40  
28  
-
OUT  
o
+125 C  
-
mA  
o
3
-55 C  
-
mA  
o
-I  
Note 3  
1
+25 C  
-50  
-40  
-28  
6.1  
6.5  
-5.6  
-5.2  
mA  
OUT  
o
2
+125 C  
-
mA  
o
3
-55 C  
-
mA  
o
Quiescent Power  
Supply Current  
I
R = 100Ω  
1
+25 C  
5.6  
5.2  
-6.1  
-6.5  
mA/Op Amp  
mA/Op Amp  
mA/Op Amp  
mA/Op Amp  
CC  
L
o
o
2, 3  
1
+125 C, -55 C  
o
I
R = 100Ω  
+25 C  
EE  
L
o
o
2, 3  
+125 C, -55 C  
NOTES:  
1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle)  
output current must not exceed 30mA for maximum reliability.  
2. Guaranteed from +IN Common Mode Rejection Test, by: +R = 1/CMS  
.
IBP  
IN  
3. Guaranteed from V  
Test with R = 50, by: I  
= V  
/50Ω.  
OUT  
L
OUT  
OUT  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Table 2 Intentionally Left Blank.  
Table 3 Intentionally Left Blank.  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
TABLE 4. ELECTRICAL TEST REQUIREMENTS  
MIL-STD-883 TEST REQUIREMENTS  
SUBGROUPS (SEE TABLE 1)  
Interim Electrical Parameters (Pre Burn-In)  
Final Electrical Test Parameters  
Group A Test Requirements  
1
1(Note 1), 2, 3  
1, 2, 3  
Groups C and D Endpoints  
1
NOTE:  
1. PDA applies to Subgroup 1 only.  
Spec Number 511111-883  
3-222  
HFA1212/883  
Die Characteristics  
DIE DIMENSIONS:  
69 x 92 x 19 mils ± 1 mils  
1750 x 2330 x 483µm ± 25.4µm  
METALLIZATION:  
Type: Metal 1: AICu(2%)/TiW  
Thickness: Metal 1: 8kÅ ± 0.4kÅ  
Type: Metal 2: AICu(2%)  
Thickness: Metal 2: 16kÅ ± 0.8kÅ  
GLASSIVATION:  
Type: Nitride  
Thickness: 4kÅ ± 0.5kÅ  
WORST CASE CURRENT DENSITY:  
TBD  
TRANSISTOR COUNT: 150  
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)  
Metallization Mask Layout  
HFA1212/883  
-IN1  
OUT1  
NC  
V+  
NC  
OUT2  
+IN1  
NC  
-IN2  
V-  
NC  
+IN2  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.  
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-  
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Spec Number 511111-883  
3-223  

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