HFA1245MJ/883 [RENESAS]
DUAL OP-AMP, 10000uV OFFSET-MAX, CDIP14;
| 型号： | HFA1245MJ/883 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | DUAL OP-AMP, 10000uV OFFSET-MAX, CDIP14 放大器 CD |
| 文件： | 总6页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Semiconductor
HFA1245/883
Dual, High Speed, Low Power, Video
PRELIMINARY
Juen 1994
Operational Amplifier with Output Disable
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HFA1245/883 is a dual high speed, low power current
883 and is Fully Conformant Under the Provisions of feedback amplifier built with Harris’ proprietary complemen-
Paragraph 1.2.1.
tary bipolar UHF-1 process.
• Low Supply Current. . . . . . . . . . . . . . . . . . 5.9mA (Typ) This amplifier features individual TTL/CMOS compatible dis-
able controls, which when pulled low, reduce the supply cur-
rent and force the output into a high impedance state. This
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 530MHz (Typ)
allows easy implementation of simple, low power video
switching and routing systems. Component and composite
video systems also benefit from this op amp’s excellent gain
flatness, and good differential gain and phase specifications.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . 1050V/µs (Typ)
• Excellent Gain Flatness (to 50MHz) . . . . ±0.11dB (Typ)
• Excellent Differential Gain . . . . . . . . . . . . . 0.02% (Typ)
• Excellent Differential Phase . . . . . . . . . 0.03 Deg. (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)
• Individual Output Enable/Disable
Multiplexed A/D applications will also find the HFA1245/883
useful as the A/D driver/multiplexer.
The HFA1245/883 is a low power, high performance upgrade
for the popular HA5022/883.
• Output Enable / Disable Time . . . . . . 160ns/20ns (Typ)
Ordering Information
Applications
TEMPERATURE
• Multiplexed Flash A/D Driver
• RGB Multiplexers and Preamps
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
PART NUMBER
RANGE
PACKAGE
o
o
HFA1245MJ/883
-55 C to +125 C
14 Lead CerDIP
• Hand Held and Miniaturized RF Equipment
• Battery Powered Communications
Pinout
HFA1245/883
(CERDIP)
TOP VIEW
-IN1 1
+IN1
14
13
OUT1
NC
-
+
2
DISABLE 1 3
12 GND
4
11
10
9
V+
V-
5
6
7
DISABLE 2
+IN2
NC
NC
+
-
-IN2
8
OUT2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Spec Number 511112-883
File Number 3743
Copyright © Harris Corporation 1994
3-224
Specifications HFA1245/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Thermal Resistance
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V CerDIP Package . . . . . . . . . . . . . . . . . 75 C/W
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Maximum Package Power Dissipation at +75 C
Output Current (Note 1) . . . . . . . . . . . . . . . . Short Circuit Protected CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Output Current (50% Duty Cycle, Note 1) . . . . . . . . . . . . . . . .60mA Package Power Dissipation Derating Factor above +75 C
θ
θ
JA
JC
o
o
20 C/W
o
o
o
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .> 2000V
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C
o
o
Storage Temperature Range . . . . . . . . . . . . . .-65 C ≤ T ≤ +150 C
A
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating V
(±V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
R ≥ 50Ω
L
SUPPLY
S
o
o
Operating Temperature Range. . . . . . . . . . . . .-55 C ≤ T ≤ +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
= ±5V, A = +1, R = 560Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
-5
MAX
5
UNITS
mV
o
Input Offset Voltage
V
V
= 0V
1
+25 C
IO
CM
CM
o
o
2, 3
1
+125 C, -55 C
-10
-7.5
-15
10
mV
o
Channel-to-Channel
Input Offset Voltage
Mismatch
∆V
V
= 0V
+25 C
7.5
15
mV
IO
o
o
2, 3
+125 C, -55 C
mV
o
Common Mode
Rejection Ratio
CMRR
∆V
= ±1.8V
1
2
+25 C
45
42
-
-
dB
dB
CM
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
42
-
dB
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
o
Power Supply
Rejection Ratio
PSRRP ∆V
= ±1.8V
1
2
+25 C
48
45
-
-
dB
dB
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
45
-
dB
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
PSRRN ∆V
= ±1.8V
1
2
+25 C
48
45
-
-
dB
dB
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
45
-
dB
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Non-Inverting Input
(+IN) Current
I
V
= 0V
1
+25 C
-15
-25
-15
-25
15
25
15
25
µA
µA
µA
µA
BSP
CM
o
o
2, 3
1
+125 C, -55 C
o
Channel-to-Channel
+IN Current
Mismatch
∆I
V
= 0V
+25 C
BSP
CM
o
o
2, 3
+125 C, -55 C
o
+IN Current Common CMS
Mode Sensitivity
∆V
= ±1.8V
1
2
+25 C
-
-
1.25
2.85
µA/V
µA/V
IBP
CM
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
2.85
µA/V
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
Spec Number 511112-883
3-225
Specifications HFA1245/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±5V, A = +1, R = 560Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
+R
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
800
350
-
MAX
UNITS
kΩ
o
+IN Resistance
Note 2
1
2, 3
1
+25 C
-
-
IN
o
o
+125 C, -55 C
kΩ
o
+IN Current Power
Supply Sensitivity
PPSS
∆V
= ±1.8V
+25 C
1
3
µA/V
µA/V
IBP
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
2
+125 C
-
o
∆V
= ±1.2V
3
-55 C
-
3
µA/V
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
NPSS
∆V
= ±1.8V
1
2
+25 C
-
-
1
3
µA/V
µA/V
IBP
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
3
µA/V
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Inverting Input (-IN)
Current
I
V
= 0V
1
2, 3
1
+25 C
-7.5
-25
-10
-30
-
7.5
25
10
30
6
µA
µA
BSN
CM
o
o
+125 C, -55 C
o
Channel-to-Channel
-IN Current Mismatch
∆I
V
= 0V
+25 C
µA
BSN
CM
o
o
2, 3
1
+125 C, -55 C
µA
o
-IN Current Common
Mode Sensitivity
CMS
∆V
= ±1.8V
+25 C
µA/V
µA/V
IBN
CM
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
o
2
+125 C
-
8
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
o
-IN Current Power
Supply Sensitivity
PPSS
NPSS
∆V
= ±1.8V
1
2
+25 C
-
-
5
8
µA/V
µA/V
IBN
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
∆V
= ±1.8V
1
2
+25 C
-
-
5
8
µA/V
µA/V
IBN
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Output Voltage
Swing
V
V
A = -1
V
V
V
V
= -3.2V
= -3V
1
+25 C
3
2.8
-
-
-
V
V
V
V
OP100
V
IN
IN
IN
IN
R = 100Ω
L
o
o
2, 3
1
+125 C, -55 C
o
A = -1
=+3.2V
= +3V
+25 C
-3
ON100
V
R = 100Ω
L
o
o
2, 3
+125 C, -55 C
-
-2.8
Spec Number 511112-883
3-226
Specifications HFA1245/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±5V, A = +1, R = 560Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
2.5
2.0
1.4
-
MAX
-
UNITS
o
Output Voltage
Swing
V
A = -1
R = 50Ω
V
V
V
V
V
V
= -2.7V
1
2
+25 C
V
OP50
ON50
V
IN
IN
IN
IN
IN
IN
L
o
= -2.25V
= -2.25V
= +2.7V
= +2.25V
= +2.25V
+125 C
-
V
o
3
-55 C
-
V
o
V
A = -1
R = 50Ω
1
+25 C
-2.5
-2.0
-1.4
-
V
V
V
L
o
2
+125 C
-
o
3
-55 C
-
V
o
Output Current
+I
Note 3
Note 3
1
+25 C
50
40
28
-
mA
OUT
OUT
o
2
+125 C
-
mA
o
3
-55 C
-
mA
o
-I
1
+25 C
-50
-40
-28
6.1
6.5
-5.6
-5.2
4
mA
o
2
+125 C
-
mA
o
3
-55 C
-
mA
o
Quiescent Power
Supply Current
I
R = 100Ω
1
+25 C
5.6
5.2
-6.1
-6.5
-
mA/Op Amp
mA/Op Amp
mA/Op Amp
mA/Op Amp
mA/Op Amp
mA/Op Amp
mA/Op Amp
mA/Op Amp
µA
CC
L
o
o
2, 3
1
+125 C, -55 C
o
I
R = 100Ω
+25 C
EE
L
o
o
2, 3
1
+125 C, -55 C
o
Disabled Power
Supply Current
DISI
DISI
R = 100Ω, V
= 0V
= 0V
+25 C
CC
EE
L
DIS
DIS
o
o
2, 3
1
+125 C, -55 C
-
4.25
-
o
R = 100Ω, V
+25 C
-4
L
o
o
2, 3
1
+125 C, -55 C
-4.25
-10
-10
-
o
Disabled Output
Leakage Current
DOLC
V
V
V
= 0V,
= ±2.5V,
+25 C
10
10
DIS
IN
o
o
2, 3
+125 C, -55 C
µA
=
2.5V
+
OUT
o
Disable Input
Current
DILLC
DILHC
DILLV
DILHV
V
= 0V
1
2, 3
1
+25 C
-
200
200
15
15
0.8
0.8
-
µA
µA
µA
µA
V
DIS
DIS
o
o
+125 C, -55 C
-
o
V
= 5V
+25 C
-
-
o
o
2, 3
1
+125 C, -55 C
o
Disable Input
Logic Levels
+25 C
-
o
o
2, 3
1, 2
3
+125 C, -55 C
-
V
o
o
+25 C, +125 C
2.0
2.4
V
o
-55 C
-
V
NOTES:
1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle)
output current must not exceed 30mA for maximum reliability.
2. Guaranteed from +IN Common Mode Rejection Test, by: +R = 1/CMS
.
IBP
IN
3. Guaranteed from V
Test with R = 50Ω, by: I
= V
/50Ω.
OUT
L
OUT
OUT
Spec Number 511112-883
3-227
Specifications HFA1245/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
Table 3 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
1
1 (Note 1), 2, 3
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511112-883
3-228
HFA1245/883
Die Characteristics
DIE DIMENSIONS:
69 x 92 x 19 mils ± 1 mils
1750 x 2330 x 483µm ± 25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
WORST CASE CURRENT DENSITY: TBD
TRANSISTOR COUNT: 150
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1245/883
OUT1
-IN1
GND (NOTE 1)
V+
+IN1
NC
DISABLE1
V-
DISABLE2
NC
OUT2
+IN2
V-
-IN2
NOTE:
1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g. V+ = 10V, V- = 0V). See the “Application Information” section for details.
Spec Number 511112-883
3-229
相关型号：
HFA1245_04
Dual, 420MHz, Low Power, Video, Current Feedback Operational Amplifier with Disable
INTERSIL
©2020 ICPDF网 联系我们和版权申明