HA-5142/883 [INTERSIL]
Dual, Ultra Low Power Operational Amplifier; 双路，超低功耗运算放大器
| 型号： | HA-5142/883 |
| 厂家： | 
Intersil |
| 描述： | Dual, Ultra Low Power Operational Amplifier |
| 文件： | 总5页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
HA-5142/883
Dual, Ultra Low Power Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5142/883 dual, ultra-low power operational amplifier
provides AC and DC performance characteristics similar to,
or better than most general purpose amplifiers while only
drawing 1/30 of the supply current of most general purpose
amplifiers. This amplifier is well suited to applications which
require low power dissipation and good electrical character-
istics.
o
• Low Supply Current at V = +5V. . . .(+25 C) 160µA (Max)
S
(Full) 200µA (Max)
• Wide Supply Voltage Range . . . . . . Single 3V to 30V or
Dual ±1.5 to ±15V
The HA-5142/883 provides accurate signal processing by
virtue of their low input offset voltage (6mV), low input bias
current (100nA), high open loop gain (20kV/V) and low noise
(20nV/√Hz). These characteristics coupled with a 1.5V/µs
slew rate and a 24kHz bandwidth make the HA-5142/883
ideal for use in low power instrumentation, audio amplifier
and active filter designs.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 0.8V/µs (Min)
1.5V/µs (Typ)
• High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 20kV/V (Min)
75kV/V (Typ)
• Low Noise (1kHz) . . . . . . . . . . . . . . . . . . 20nV/√Hz (Typ)
• 100% Tested at ±15V and +5V, 0V Power Supplies
• Unity Gain Stable
Ordering Information
• Dielectric Isolation
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
8 Lead CerDIP
8 Pin Can
Applications
• Portable Instruments
HA7-5142/883
HA2-5142/883
HA4-5142/883
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
• Meter Amplifiers
20 Lead Ceramic LCC
• Telephone Headsets
• Microphone Amplifiers
• Instrumentation
• For Further Design Ideas See Application Note AN544
Pinouts
HA-5142/883
(CERDIP)
TOP VIEW
HA-5142/883
(CLCC)
TOP VIEW
HA-5142/883
(METAL CAN)
TOP VIEW
V+
8
1
2
3
4
OUT1
-IN1
+IN1
V-
8
7
6
5
V+
3
2
1 20 19
1
3
7
5
OUT2
OUT1
OUT2
-IN2
+IN2
1
-
+
1
2
18
17
16
15
14
NC
4
5
6
7
8
NC
1
+
+
-
-
+
-
OUT2
NC
2
-
+
-IN1
NC
2
6
-IN1
-IN2
2
+
-
-IN2
NC
+IN1
NC
+IN2
+IN1
4
13
10 11 12
9
V -
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Spec Number 511035-883
FN3732.1
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
149
Specifications HA-5142/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal. . . . . . . . . . . . . . . . . . . . . . V+ to V-
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Output Current Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
One Amplifier Shorted to Ground
Thermal Resistance
θJA
65oC/W
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W
28oC/W
15oC/W
67oC/W
Ceramic LCC Package . . . . . . . . . . . . . .
Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . ±1.5V to ±15V
or 3V to 30V
VINCM ≤ 1/2 (V+ - V-)
L ≥ 50kΩ
R
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
Subscript 1 Refers to Supply Voltages (V±) = ±15V, Subscript 2 Refers to V+ = 5.0, V- = 0V
LIMITS
MAX
GROUP A
SUBGROUPS
PARAMETERS
SYMBOL
CONDITIONS
VCM = 0V
TEMPERATURE
+25oC
MIN
-6
UNITS
µV
Input Offset Voltage
VIO1
1
2, 3
1
6
8
+125oC, -55oC
+25oC
-8
µV
VIO2
VCM = 0V,
OUT = 1.4V
-6
6
µV
V
2, 3
1
+125oC, -55oC
+25oC
-8
8
µV
Input Bias Current
+IB1
VCM = 0V,
+RS = 10kΩ,
-RS = 100Ω
-100
-125
100
125
nA
2, 3
+125oC, -55oC
nA
-IB1
VCM = 0V,
+RS = 100Ω,
-RS = 10kΩ
1
+25oC
-100
-125
100
125
nA
nA
2, 3
+125oC, -55oC
+IB2
VCM = 0V, VOUT
1.4V,
+RS = 10kΩ,
-RS = 100Ω
=
=
1
+25oC
-100
-125
100
125
nA
nA
2, 3
+125oC, -55oC
-IB2
VCM = 0V, VOUT
1.4V,
+RS = 100Ω,
-RS = 10kΩ
1
+25oC
-100
-125
100
125
nA
nA
2, 3
+125oC, -55oC
Input Offset Current
IIO1
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
1
+25oC
-10
-20
10
20
nA
nA
2, 3
+125oC, -55oC
IIO2
VCM = 0V, VOUT
1.4V
+RS = 10kΩ,
-RS = 10kΩ
=
1
+25oC
-10
-20
10
20
nA
nA
2, 3
+125oC, -55oC
Spec Number 511035-883
150
Specifications HA-5142/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
Subscript 1 Refers to Supply Voltages (V±) = ±15V, Subscript 2 Refers to V+ = 5.0, V- = 0V
LIMITS
MAX
GROUP A
SUBGROUPS
PARAMETERS
SYMBOL
CONDITIONS
V+ = +5V,
TEMPERATURE
+25oC
MIN
10
10
-
UNITS
Common Mode
Range
+CMR1
1
2, 3
1
-
-
V
V
V
V
V
V
V- = -25V
+125oC, -55oC
+25oC
-CMR1
+CMR2
V+ = +25V,
V- = -5V
-10
-10
-
2, 3
1
+125oC, -55oC
+25oC
-
V+ = +5V to +2V,
V- = 0V to -3V,
3
2, 3
+125oC, -55oC
3
-
V
OUT = 1.4V to -1.6V
Large Signal Voltage
Gain
+AVOL1
VOUT = 0V and +10V,
RL = 50kΩ
4
5, 6
4
+25oC
+125oC, -55oC
+25oC
20
15
20
15
20
15
77
77
-
-
-
-
-
-
-
-
kV/V
kV/V
kV/V
kV/V
kV/V
kV/V
dB
-AVOL1
VOUT = 0V and -10V,
RL = 50kΩ
5, 6
4
+125oC, -55oC
+25oC
+AVOL2
+CMRR1
VOUT = 1.4V and 2.5V,
RL = 50kΩ
5, 6
1
+125oC, -55oC
+25oC
Common Mode
Rejection Ratio
∆VCM = 10V,
V+ = 5V, V- = -25V,
2, 3
+125oC, -55oC
dB
V
OUT = -10V
-CMRR1
+CMRR2
∆VCM = 10V,
V+ = 25V, V- = -5V,
1
+25oC
77
77
-
-
dB
dB
2, 3
+125oC, -55oC
V
OUT = ¼+10V
∆VCM = 0V to 3V,
V+ = 2V, V- = -3V,
1
+25oC
77
77
-
-
dB
dB
2, 3
+125oC, -55oC
V
OUT = ¼-1.6V
Output Voltage
Swing
+VOUT1
-VOUT1
+VOUT2
-VOUT2
+ICC1
RL = 50kΩ
1
2, 3
1
+25oC
+125oC, -55oC
+25oC
10
-
-
V
V
10
RL = 50kΩ
-
-10
-10
-
V
2, 3
1
+125oC, -55oC
+25oC
-
V
RL = 50kΩ
Terminated at 2.5V
3.8
V
2, 3
1
+125oC, -55oC
+25oC
3.5
-
V
RL = 50kΩ
Terminated at 2.5V
-
1
V
2, 3
1
+125oC, -55oC
+25oC
-
1.2
300
400
-
V
Quiescent Power
Supply Current
(Both Amplifiers)
VOUT = 0V, IOUT
0mA
=
=
-
µA
µA
µA
µA
µA
µA
2, 3
1
+125oC, -55oC
+25oC
-
-300
-400
-
-ICC1
VOUT = 0V, IOUT
0mA
2, 3
1
+125oC, -55oC
+25oC
-
-ICC2
VOUT = 1.4V,
160
200
IOUT = 0mA
2, 3
+125oC, -55oC
-
Spec Number 511035-883
151
Specifications HA-5142/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified.
Subscript 1 Refers to Supply Voltages (V±) = ±15V, Subscript 2 Refers to V+ = 5.0, V- = 0V
LIMITS
MAX
GROUP A
SUBGROUPS
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
+25oC
MIN
77
UNITS
dB
Power Supply
Rejection Ratio
+PSRR1
∆VSUP = +10V,
V+ = +10V, V- = -15V,
V+ = +20V, V- = -15V
1
-
-
2, 3
+125oC, -55oC
77
dB
-PSRR1
-PSRR2
CS
∆VSUP = +10V,
V+ = +15V, V- = -10V,
V+ = +15V, V- = -20V
1
+25oC
77
77
-
-
dB
dB
2, 3
+125oC, -55oC
∆VSUP = +10V,
V+ = +5V, V- = 0V,
V+ = +15V, V- = 0V
1
+25oC
77
77
-
-
dB
dB
2, 3
+125oC, -55oC
Channel Separation
RL = 50kΩ
1
+25oC
80
80
-
-
dB
dB
2, 3
+125oC, -55oC
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: RSOURCE = 50Ω, RLOAD = 50kΩ, CLOAD = 50pF, VOUT = 0V, AV = 1V/V, Unless Otherwise Specified. Subscript 1 Refers to
Supply
Voltages (V±) = ±15V; Subscript 2 Refers to V+ = 5.0V, V- = 0.0V.
LIMITS
GROUP A
PARAMETERS
Slew Rate
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
+SR1
VOUT = -3V to +3V,
4
+25oC
0.8
-
V/µs
VIN S.R. ≤ 10V/µs
-SR1
+SR2
-SR2
VOUT = +3V to -3V,
4
4
4
+25oC
+25oC
+25oC
0.8
0.8
0.8
-
-
-
V/µs
V/µs
V/µs
VIN S.R. ≤ 10V/µs
VOUT = 0V to +3V,
VIN S.R. ≤ 10V/µs
VOUT = +3V to 0V,
VIN S.R. ≤ 10V/µs
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: RSOURCE = 50Ω, RLOAD = 50kΩ, CLOAD = 50pF, AV = 1V/V, Unless Otherwise Specified.
Subscript 1 Refers to Supply Voltages (V±) = ±15V; Subscript 2 Refers to V+ = 5.0V, V- = 0.0V.
LIMITS
PARAMETERS
SYMBOL
FPBW1
FPBW2
CONDITIONS
VPEAK = 10V
VPEAK = 1.1V,
REF = 2.5V
RL = 50kΩ, CL = 50pF
NOTES
1, 2
TEMPERATURE
+25oC
MIN
12.7
MAX
UNITS
kHz
Full Power Bandwidth
-
-
1, 2
+25oC
115.8
kHz
V
Minimum Closed Loop
Stable Gain
CLSG
PC1
1
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
1
-
-
12
1
V/V
mW
mW
Quiescent Power
Consumption
VOUT = 0V, IOUT
0mA
=
1, 3
1, 3
PC2
VOUT = 1.4V,
-
IOUT = 0mA
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characteriza-
tion based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outpSutpse.)c Number 511035-883
152
HA-5142/883
Die Characteristics
DIE DIMENSIONS:
104 x 55 x 19 mils ± 1 mils
2650 x 1400 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
5
2
0.6 x 10 A/cm
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 72
PROCESS: Bipolar/JFET Dielectric Isolation
Metallization Mask Layout
HA-5142/883
+IN1
V-
-IN1
OUT1
+IN2
-IN2
OUT2
NC
V+
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Spec Number 511035-883
153
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