HA-5147/883 [INTERSIL]
100MHz, Ultra Low Noise, Precision, High Slew Rate Operational Amplifier; 为100MHz ,超低噪声,高精度,高转换率运算放大器![HA-5147/883](http://pdffile.icpdf.com/pdf1/p00073/img/icpdf/HA-5147_385660_icpdf.jpg)
型号: | HA-5147/883 |
厂家: | ![]() |
描述: | 100MHz, Ultra Low Noise, Precision, High Slew Rate Operational Amplifier |
文件: | 总9页 (文件大小:390K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
HA-5147/883
100MHz, Ultra Low Noise, Precision,
High Slew Rate Operational Amplifier
June 1998
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5147/883 monolithic operational amplifier features
an unparalleled combination of precision DC and wideband
high speed characteristics. Utilizing the Intersil DI technol-
ogy and advanced processing techniques, this unique
design unites low noise precision instrumentation perfor-
mance with high speed wideband capability.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 28V/µs (Min)
• Wide Gain Bandwidth (A ≥ 10) . . . . . . . 100MHz (Min)
V
This amplifier’s impressive list of features include low V
,
• Low Noise (at 1kHz). . . . . . . . . . . . . . . 4.5nV/√Hz (Max)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . .100µV (Max)
OS
wide gain-bandwidth, high open loop gain, and high CMRR.
Additionally, this flexible device operates over a wide supply
range while consuming only 120mW of power.
o
• Low Offset Drift With Temperature. . . . 1.8µV/ C (Max)
Using the HA-5147/883 allows designers to minimize errors
while maximizing speed and bandwidth in applications
requiring gains greater than ten.
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . .100dB (Min)
• High Voltage Gain . . . . . . . . . . . . . . . . . . 700kV/V (Min)
This device is ideally suited for low level transducer signal
amplifier circuits. Other applications which can utilize the
HA-5147/883’s qualities include instrumentation amplifiers,
pulse or RF amplifiers, audio preamplifiers, and signal condi-
tioning circuits.
Applications
• High Speed Signal Conditioners
• Wide Bandwidth Instrumentation Amplifiers
• Low Level Transducer Amplifiers
• Fast, Low Level Voltage Comparators
• Highest Quality Audio Preamplifiers
• Pulse/RF Amplifiers
Ordering Information
TEMP.
PKG.
NO.
o
PART NUMBER RANGE ( C)
PACKAGE
HA4-5147/883
HA7-5147/883
-55 to 125 20 Ld CLCC
-55 to 125 8 Ld CERDIP
J20.A
F8.3A
Pinouts
HA-5147/883
(CERDIP)
HA-5147/883
(CLCC)
TOP VIEW
TOP VIEW
BAL
-IN
1
2
3
4
8
7
6
5
BAL
V+
3
2
1
20 19
-
+
18
17
16
15
14
NC
V+
4
5
6
7
8
NC
-IN
+IN
OUT
NC
-
NC
OUT
NC
NC
+IN
NC
V-
+
9
10 11 12 13
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number 511009-883
File Number 3715.2
1
HA-5147/883
Absolute Maximum Ratings
Thermal Information
o
o
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V Thermal Resistance (Typical, Note 2)
θ
( C/W)
θ
( C/W)
JA
JC
Differential Input Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . .0.7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
Output Current . . . . . . . . . . . . . . . . . . . Full Short Circuit Protection
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
CERDIP Package . . . . . . . . . . . . . . . .
115
65
28
15
CLCC Package . . . . . . . . . . . . . . . . . .
o
o
Package Power Dissipation Limit at 75 C for T ≤ 175 C
J
CERDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
CLCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above 75 C
CERDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/ C
o
o
Operating Conditions
o
CLCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15.4mW/ C
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
o
Maximum Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . 175 C
J
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
o
o
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
V
R
≤ 1/2 (V+ - V-)
INCM
≥ 600Ω
o
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes.
2. θ is measured with the component mounted on an evaluation PC board in free air.
JA
TABLE 1. DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Tested at: V
= ±15V, R
= 50Ω, R = 100kΩ, V
LOAD OUT
= 0V, Unless Otherwise Specified.
SUPPLY
SOURCE
GROUP A
SUBGROUPS
o
PARAMETER
SYMBOL
CONDITIONS
TEMP. ( C)
MIN
-100
-300
-
MAX
100
300
80
UNITS
µV
Input Offset Voltage
V
V
V
= 0V
1
25
IO
CM
2, 3
1
125, -55
25
µV
Input Bias Current
I
= 0V,
nA
B
CM
R
= 10kΩ, 50Ω
S
2, 3
125, -55
-
150
nA
+I + –I
B
B
------------------------------
2
Input Offset Current
I
V
= 0V,
1
25
-75
75
nA
nA
IO
CM
+R = 10kΩ,
-R = 10kΩ
S
2, 3
125, -55
-135
135
S
Common Mode
Range
+CMR
-CMR
V+ = +4.7V,
V- = -25.3V
1
2, 3
1
25
125, -55
25
10.3
10.3
-
-
V
V
-
V+ = +25.3V,
V- = -4.7V
-10.3
V
2, 3
4
125, -55
25
-
-10.3
V
Large Signal Voltage
Gain
+A
VOL
V
R
= 0V and +10V,
700
300
700
300
100
100
100
100
-
-
-
-
-
-
-
-
kV/V
kV/V
kV/V
kV/V
dB
OUT
= 2kΩ
L
5, 6
4
125, -55
25
-A
VOL
V
= 0V and -10V,
OUT
R
= 2kΩ
L
5, 6
1
125, -55
25
Common Mode
Rejection Ratio
+CMRR
-CMRR
∆V
∆V
∆V
∆V
= +11V
= +10V
= -11V
= -10V
CM
CM
CM
CM
2, 3
1
125, -55
25
dB
dB
2, 3
125, -55
dB
Spec Number 511009-883
2
HA-5147/883
TABLE 1. DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
Device Tested at: V
= ±15V, R
= 50Ω, R = 100kΩ, V
LOAD OUT
= 0V, Unless Otherwise Specified.
SUPPLY
SOURCE
GROUP A
SUBGROUPS
o
PARAMETER
SYMBOL
CONDITIONS
TEMP. ( C)
MIN
11.5
11.5
-
MAX
UNITS
V
Output Voltage Swing
+V
R
R
= 2kΩ
4
5, 6
4
25
-
OUT1
L
L
125, -55
25
-
V
-V
= 2kΩ
-11.5
V
OUT1
5, 6
4
125, -55
25
-
-11.5
V
+V
R
R
= 600Ω
= 600Ω
10
-
-
V
OUT2
L
L
-V
+I
4
25
-10
V
OUT2
Output Current
V
= -10V
= +10V
4
25
16.5
-
-
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
OUT
OUT
OUT
-I
V
4
25
-16.5
OUT
Quiescent Power
Supply Current
+I
V
= 0V, I
= 0mA
= 0mA
1
25
-
4
4
-
CC
OUT
OUT
2, 3
1
125, -55
25
-
-I
V
= 0V, I
-4
CC
OUT
OUT
2, 3
1
125, -55
25
-4
-
Power Supply
Rejection Ratio
+PSRR
-PSRR
∆V
= +14V
86
86
86
86
-
SUP
SUP
SUP
SUP
∆V
∆V
∆V
= +13.5V
= +14V
2, 3
1
125, -55
25
-
-
= +13.5V
2, 3
1
125, -55
25
-
Offset Voltage
Adjustment
+V Adj
IO
Note 3
V
-1
-
IO
2, 3
1
125, -55
25
V
-1
-
IO
-V Adj
IO
Note 3
V
V
+1
+1
-
IO
2, 3
125, -55
-
IO
NOTE:
3. Offset adjustment range is [V (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment
IO
through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Tested at: V
= ±15V, R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +10V/V, Unless Otherwise Specified.
SUPPLY
GROUP A
SUBGROUPS
o
PARAMETER
SYMBOL
+SR
CONDITIONS
TEMP. ( C)
MIN
28
28
-
MAX
UNITS
V/µs
V/µs
ns
Slew Rate
V
= -3V to +3V
= +3V to -3V
= 0 to +200mV
OUT
7
7
7
25
25
25
-
-
OUT
-SR
V
OUT
Rise and Fall Time
Overshoot
t
V
50
r
10% ≤ t ≤ 90%
r
t
V
= 0 to -200mV
7
25
-
50
ns
f
OUT
10% ≤ t ≤ 90%
f
+OS
-OS
V
= 0 to +200mV
= 0 to -200mV
7
7
25
25
-
-
40
40
%
%
OUT
V
OUT
Spec Number 511009-883
3
HA-5147/883
TABLE 3. ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Characterized at: V
= ±15V, R
= 2kΩ, C
LOAD
= 50pF, A = +10V/V, Unless Otherwise Specified.
V
SUPPLY
LOAD
o
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMP. ( C)
MIN
MAX
UNITS
o
Average Offset Voltage
Drift
V
TC
V
V
= 0V
= 0V
4
-55 to 125
-
1.8
µV/ C
IO
CM
CM
Differential Input
Resistance
R
4
4
25
25
0.8
-
-
MΩ
IN
Low Frequency
E
0.1Hz to 10Hz
0.25
µV
P-P
NP-P
Peak-to-Peak Noise
Input Noise Voltage
Density
E
R
R
R
R
R
R
= 20Ω, f = 10Hz
4
4
25
-
10
5.6
4.5
4.0
2.3
0.6
-
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
N
S
S
S
S
S
S
O
= 20Ω, f = 100Hz
25
-
-
O
= 20Ω, f = 1kHz
4
25
O
Input Noise Current
Density
I
= 2MΩ, f = 10Hz
4
25
-
N
O
= 2MΩ, f = 100Hz
4
25
-
O
= 2MΩ, f = 1kHz
4
25
25
-
O
Gain Bandwidth Product
Full Power Bandwidth
GBWP
V
= 100mV, f = 10kHz
4
120
100
445
±10
O
O
V
= 100mV, f = 1MHz
4
25
-
MHz
O
O
FPBW
CLSG
V
= 10V
4, 5
4
25
-
kHz
PEAK
Minimum Closed Loop
Stable Gain
R
= 2kΩ, C = 50pF
-55 to 125
-
V/V
L
L
Settling Time
t
To 0.1% for a 10V Step
Open Loop
4
4
25
25
-
-
-
600
100
120
µs
Ω
S
Output Resistance
R
OUT
Quiescent Power
Consumption
PC
V
= 0V, I
OUT
= 0mA
4, 6
-55 to 125
mW
OUT
NOTES:
4. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characteriza-
tion based upon data from multiple production runs which reflect lot to lot and within lot variation.
5. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
).
PEAK
6. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on output.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 7), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Groups C and D Endpoints
NOTE:
7. PDA applies to Subgroup 1 only.
Spec Number 511009-883
4
HA-5147/883
Die Characteristics
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY:
5
2
104.3 x 65 x 19 mils
3.6 x 10 A/cm at 15mA
2650 x 1650 x 483µm
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph
30.5.5.4.
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
SUBSTRATE POTENTIAL (Powered Up):
V-
GLASSIVATION:
TRANSISTOR COUNT:
Type: Nitride (Si N ) over Silox (SiO , 5% Phos.)
3
4
2
Silox Thickness: 12kÅ ± 2kÅ
63
Nitride Thickness: 3.5kÅ ± 1.5kÅ
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5147/883
BAL
BAL
-IN
V+
+IN
OUT
V-
NC
Spec Number 511009-883
5
HA-5147/883
Burn-In Circuits
HA-5147/883 CERDIP
R
2
1
2
3
4
8
7
6
5
R
1
V+
-
+
C
D
1
1
V-
D
C
R
3
2
2
HA-5147/883 CLCC
R
2
3
2
1
20 19
18
4
5
6
7
8
R
1
V+
17
16
-
+
C
D
1
1
15
14
R
3
9
10 11 12 13
C
D
2
2
V-
NOTE:
1
R
R
C
D
= R = 1kΩ, ±5%, / W (Min.)
1
2
1
1
3
4
1
= 10kΩ, ±5%, / W (Min.)
= C = 0.01µF/Socket or 0.1µF/Row (Min.)
= D = 1N4002 or Equivalent/Board
4
2
2
|(V+) - (V-)| = 30V
Spec Number 511009-883
6
HA-5147/883
o
Typical Performance Information T = 25 C, V
= ±15V, Unless Otherwise Specified
SUPPLY
A
V+
R
T
10kΩ
1
2
3
4
8
7
6
5
-
+
NOTE: Tested offset adjustment range is |V
OS
±1mV| minimum referred to output. Typical range is ±4mV with R = 10kΩ.
T
SUGGESTED OFFSET VOLTAGE ADJUSTMENT
A
= +10V/V
V
+
V
AC
V
OUT
AC
-
1.8kΩ
200Ω
50Ω
50pF
LARGE AND SMALL SIGNAL RESPONSE TEST CIRCUIT
IN
IN
OUT
OUT
Vertical Scale: Input = 0.5V/Div.
Vertical Scale: Input = 10mV/Div.
Output = 100mV/Div.
Output = 5V/Div.
Horizontal Scale: 500ns/Div.
Horizontal Scale: 100ns/Div.
LARGE SIGNAL RESPONSE
SMALL SIGNAL RESPONSE
Spec Number 511009-883
7
HA-5147/883
Ceramic Leadless Chip Carrier Packages (CLCC)
J20.A MIL-STD-1835 CQCC1-N20 (C-2)
20 PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE
0.010 S E H S
D
INCHES MILLIMETERS
MIN
D3
SYMBOL
A
MAX
0.100
0.088
-
MIN
1.52
1.27
-
MAX
2.54
2.23
-
NOTES
o
j x 45
0.060
0.050
-
6, 7
A1
B
-
-
B1
B2
B3
D
0.022
0.028
0.56
0.71
2, 4
-
0.072 REF
1.83 REF
E3
E
B
0.006
0.342
0.022
0.358
0.15
8.69
0.56
9.09
-
-
D1
D2
D3
E
0.200 BSC
0.100 BSC
5.08 BSC
2.54 BSC
-
-
o
h x 45
-
0.358
0.358
-
9.09
9.09
2
-
0.010 S E F S
A1
0.342
8.69
E1
E2
E3
e
0.200 BSC
0.100 BSC
0.358
0.050 BSC
0.015
5.08 BSC
2.54 BSC
9.09
1.27 BSC
0.38
1.02 REF
0.51 REF
-
A
-
PLANE 2
PLANE 1
-
-
2
-
-E-
e1
h
-
-
2
5
5
-
0.040 REF
0.020 REF
j
0.007 M E F S H S
L
0.045
0.055
0.055
0.095
0.015
1.14
1.14
1.91
0.08
1.40
1.40
2.41
0.38
L1
L2
L3
ND
NE
N
0.045
0.075
0.003
-
B1
e
-
L3
L
-H-
-
5
5
5
5
3
3
3
20
20
Rev. 0 5/18/94
-F-
NOTES:
B3
E1
1. Metallized castellations shall be connected to plane 1 terminals
and extend toward plane 2 across at least two layers of ceramic
or completely across all of the ceramic layers to make electrical
connection with the optional plane 2 terminals.
L2
E2
B2
2. Unless otherwise specified, a minimum clearance of 0.015 inch
(0.38mm) shall be maintained between all metallized features
(e.g., lid, castellations, terminals, thermal pads, etc.)
L1
3. Symbol “N” is the maximum number of terminals. Symbols “ND”
and “NE” are the number of terminals along the sides of length
“D” and “E”, respectively.
D2
e1
D1
4. The required plane 1 terminals and optional plane 2 terminals (if
used) shall be electrically connected.
5. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer’s option, from that shown on the drawing.
6. Chip carriers shall be constructed of a minimum of two ceramic
layers.
7. Dimension “A” controls the overall package thickness. The maxi-
mum “A” dimension is package height before being solder dipped.
8. Dimensioning and tolerancing per ANSI Y14.5M-1982.
9. Controlling dimension: INCH.
Spec Number 511009-883
8
HA-5147/883
Ceramic Dual-In-Line Frit Seal Packages (CERDIP)
c1 LEAD FINISH
F8.3A MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A)
8 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
-D-
E
-A-
INCHES MILLIMETERS
MIN
BASE
(c)
METAL
SYMBOL
MAX
0.200
0.026
0.023
0.065
0.045
0.018
0.015
0.405
0.310
MIN
-
MAX
5.08
0.66
0.58
1.65
1.14
0.46
0.38
10.29
7.87
NOTES
b1
A
b
-
-
M
M
(b)
0.014
0.014
0.045
0.023
0.008
0.008
-
0.36
0.36
1.14
0.58
0.20
0.20
-
2
-B-
b1
b2
b3
c
3
SECTION A-A
bbb
C A - B
D
D
S
S
S
-
4
BASE
PLANE
Q
A
2
-C-
SEATING
PLANE
c1
D
3
L
α
5
S1
b2
eA
A A
e
E
0.220
5.59
5
b
C A - B
eA/2
aaa M C A - B S
c
e
0.100 BSC
2.54 BSC
-
eA
eA/2
L
0.300 BSC
0.150 BSC
7.62 BSC
3.81 BSC
-
ccc
D
D
S
M
S
S
-
NOTES:
0.125
0.200
0.060
-
3.18
5.08
1.52
-
-
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
Q
0.015
0.005
0.38
0.13
6
S1
7
o
o
o
o
90
105
90
105
-
α
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
aaa
bbb
ccc
M
-
-
-
-
0.015
0.030
0.010
0.0015
-
-
-
-
0.38
0.76
0.25
0.038
-
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
-
2, 3
8
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
N
8
8
Rev. 0 4/94
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
Spec Number 511009-883
9
相关型号:
©2020 ICPDF网 联系我们和版权申明