SKB04N60 [INFINEON]

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode; 在NPT技术的快速IGBT具有柔软，快速恢复反并联二极管EMCON


型号：	SKB04N60
厂家：	Infineon
描述：	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 在NPT技术的快速IGBT具有柔软，快速恢复反并联二极管EMCON 晶体二极管晶体管功率控制瞄准线双极性晶体管栅
文件：	总13页 (文件大小：395K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKP04N60

SKB04N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

• Very soft, fast recovery anti-parallel EmCon diode

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Package

Ordering Code

SKP04N60

SKB04N60

600V

2.3V

TO-220AB

TO-263AB

Q67040-S4216

Q67040-S4229

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

9.4

4.9

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

Turn off safe operating area

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

I_{Fpul s}

V_{G E}

t_SC

±20

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

µs

P_{t ot}

T_C= 25°C

Operating junction and storage temperature

T_j, T_stg

-55...+150

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Jul-02

SKP04N60

SKB04N60

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJCD}

R_{t hJA}

2.5

4.5

K/W

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

SMD version, device on PCB¹⁾

TO-220AB

TO-263AB

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

600

V_{G E}=0V, I_C=500µA

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=4A

T_j=25°C

1.7

2.0

2.3

2.4

2.8

T_j=150°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=4A

T_j=25°C

1.2

1.4

1.8

1.25

1.65

T_j=150°C

Gate-emitter threshold voltage

V_{G E(t h)}

I_CES

I_C=200µA,V_CE=V_GE

V_CE=600V,V_GE=0V

T_j=25°C

Zero gate voltage collector current

µA

500

T_j=150°C

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CE=0V,V_{G E}=20V

V_CE=20V, I_C=4A

100

3.1

Dynamic Characteristic

Input capacitance

C_iss

V_CE=25V,

264

317

_{G E}=0V,

Output capacitance

C_oss

C_rss

f=1MHz

Reverse transfer capacitance

Gate charge

Q_Gate

V_CC=480V, I_C=4A

_{G E}=15V

Internal emitter inductance

L_E

TO-220AB

measured 5mm (0.197 in.) from case

Short circuit collector current²⁾

I_{C( SC)}

V_{G E}=15V,t_SC≤10µs

V_CC≤ 600V,

T_j≤ 150°C

¹⁾Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Jul-02

SKP04N60

SKB04N60

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=25°C,

_CC=400V,I_C=4A,

V_{G E}=0/15V,

t_d(on)

t_r

t_{d( off)}

t_f

Turn-off delay time

Fall time

237

284

R_G=67Ω,

L_σ=180nH,

C_σ=180pF

Turn-on energy

E_on

E_off

E_{t s}

0.070

0.061

0.131

0.081 mJ

0.079

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.160

t_rr

t_S

180

T_j=25°C,

V_R=200V, I_F=4A,

di_F/dt=200A/µs

t_F

165

130

2.5

180

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

A/µs

recovery current during t_b

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=150°C

_CC=400V,I_C=4A,

V_{G E}=0/15V,

t_d(on)

t_r

t_{d( off)}

t_f

Turn-off delay time

Fall time

264

317

125

R_G=67Ω,

L_σ=180nH,

104

C_σ=180pF

Turn-on energy

E_on

E_off

E_{t s}

0.115

0.111

0.226

0.132 mJ

0.144

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.277

t_rr

t_S

230

T_j=150°C

V_R=200V, I_F=4A,

di_F/dt=200A/µs

t_F

227

300

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

200

A/µs

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Jul-02

SKP04N60

SKB04N60

I_c

t_p=2µs

15µs

10A

20A

10A

50µs

T_C=80°C

200µs

1ms

T_C=110°C

0.1A

0.01A

I_c

10V

100V

1000V

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25°C, T_j≤ 150°C)

(T_j≤ 150°C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 67Ω)

60W

50W

40W

30W

20W

10W

12A

10A

25°C

50°C

75°C 100°C 125°C

25°C

50°C

75°C 100°C 125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≤ 15V, T_j≤ 150°C)

Jul-02

SKP04N60

SKB04N60

15A

12A

15A

12A

V_GE=20V

15V

13V

11V

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

Figure 6. Typical output characteristics

(T_j= 25°C)

(T_j= 150°C)

14A

4.0V

T_j=+25°C

12A

10A

3.5V

I_C= 8A

-55°C

+150°C

3.0V

I_C= 4A

2.5V

2.0V

1.5V

1.0V

10V

-50°C

0°C

50°C 100°C 150°C

V_GE, GATE-EMITTER VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

Figure 8. Typical collector-emitter

(V_CE= 10V)

saturation voltage as a function of junction

temperature

(V_GE= 15V)

Jul-02

SKP04N60

SKB04N60

t_d(off)

t_f

100ns

t_f

t_d(on)

t_r

10ns

0Ω

10A

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_j= 150°C, V_CE= 400V,

V_GE= 0/+15V, I_C= 4A,

V_GE= 0/+15V, R_G= 67Ω,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.0V

t_d(off)

100ns

t_f

max.

typ.

t_d(on)

t_r

min.

10ns

0°C

50°C

100°C

150°C

-50°C

0°C

50°C 100°C 150°C

T_j, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 4A, R_G= 67Ω,

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(I_C= 0.2mA)

Dynamic test circuit in Figure E)

Jul-02

SKP04N60

SKB04N60

0.6mJ

0.5mJ

0.4mJ

0.3mJ

0.2mJ

0.1mJ

0.0mJ

0.4mJ

0.3mJ

0.2mJ

0.1mJ

0.0mJ

*) E_onand E_tsinclude losses

due to diode recovery.

*) E_onand E_tsinclude losses

due to diode recovery.

E_ts*

E_on

E_off

E_on

10A

0Ω

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_j= 150°C, V_CE= 400V,

V_GE= 0/+15V, I_C= 4A,

V_GE= 0/+15V, R_G= 67Ω,

Dynamic test circuit in Figure E)

0.3mJ

*) E_onand E_tsinclude losses

D=0.5

due to diode recovery.

10⁰K/W

0.2

0.1

0.2mJ

0.05

10^-1K/W

0.02

E_ts*

R , ( K / W )

0.815

0.698

0.941

0.046

τ , ( s )

0.01

0.0407

5.24*10^-3

4.97*10^-4

4.31*10^-5

0.1mJ

E_on

10^-2K/W

R₁

R₂

E_off

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

0.0mJ

0°C

10^-3K/W

1µs

50°C

100°C

150°C

10µs 100µs 1ms 10ms 100ms 1s

t_p, PULSE WIDTH

T_j, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 4A, R_G= 67Ω,

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Dynamic test circuit in Figure E)

Jul-02

SKP04N60

SKB04N60

25V

20V

15V

10V

C_iss

100pF

120V

480V

C_oss

C_rss

10pF

0nC

10nC

20nC

30nC

10V

20V

30V

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(I_C= 4A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(V_GE= 0V, f = 1MHz)

25µs

70A

60A

50A

40A

30A

20A

10A

20µs

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

15V

10V

12V

14V

16V

18V

20V

V_GE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE= 600V, start at T_j= 25°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(V_CE≤ 600V, T_j= 150°C)

Jul-02

SKP04N60

SKB04N60

500ns

400ns

300ns

200ns

100ns

0ns

560nC

480nC

400nC

320nC

240nC

160nC

80nC

I_F= 8A

I_F= 4A

I_F= 2A

0nC

40A/µs

120A/µs 200A/µs 280A/µs 360A/µs

40A/µs

120A/µs 200A/µs 280A/µs 360A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(V_R= 200V, T_j= 125°C,

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(V_R= 200V, T_j= 125°C,

Dynamic test circuit in Figure E)

400A/µs

320A/µs

240A/µs

160A/µs

80A/µs

0A/µs

I_F= 8A

I_F= 4A

I_F= 2A

40A/µs

120A/µs 200A/µs 280A/µs 360A/µs

di_F/dt, DIODE CURRENT SLOPE

40A/µs

120A/µs

200A/µs

280A/µs

360A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(V_R= 200V, T_j= 125°C,

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

Dynamic test circuit in Figure E)

(V_R= 200V, T_j= 125°C,

Dynamic test circuit in Figure E)

Jul-02

SKP04N60

SKB04N60

2.0V

1.5V

1.0V

I_F= 8A

I_F= 4A

150°C

100°C

25°C

-55°C

0.0V

0.5V

1.0V

1.5V

2.0V

-40°C 0°C

40°C 80°C 120°C

V_F, FORWARD VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

a function of forward voltage

Figure 26. Typical diode forward voltage as

a function of junction temperature

D=0.5

0.2

10⁰K/W

0.1

0.05

R , ( K / W )

0.128

0.387

0.346

1.360

τ , ( s ) =

0.085

0.02

7.30*10^-3

4.69*10^-3

7.34*10^-4

5.96*10^-5

10^-1K/W

0.01

single pulse

2.280

R₁

R₂

C₁=τ₁/R₁C₂=τ₂/R₂

10^-2K/W

1µs

10µs 100µs 1ms 10ms 100ms

t_p, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Jul-02

SKP04N60

SKB04N60

dimensions

[mm]

TO-220AB

symbol

[inch]

min

9.70

14.88

0.65

3.55

2.60

6.00

13.00

4.35

0.38

0.95

max

10.30

15.95

0.86

3.89

3.00

6.80

14.00

4.75

0.65

1.32

min

max

0.3819

0.5858

0.0256

0.1398

0.1024

0.2362

0.5118

0.1713

0.0150

0.0374

0.4055

0.6280

0.0339

0.1531

0.1181

0.2677

0.5512

0.1870

0.0256

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

1.40

2.72

0.1693

0.0461

0.0906

0.1772

0.0551

0.1071

1.17

2.30

TO-263AB (D²Pak)

dimensions

symbol

[mm]

[inch]

min

9.80

0.70

1.00

1.03

max

10.20

1.30

1.60

1.07

min

max

0.3858

0.0276

0.0394

0.0406

0.4016

0.0512

0.0630

0.0421

2.54 typ.

0.65 0.85

5.08 typ.

0.1 typ.

0.0256

0.0335

0.2 typ.

4.30

4.50

1.37

9.45

2.50

0.1693

0.0461

0.3563

0.0906

0.1772

0.0539

0.3720

0.0984

1.17

9.05

2.30

15 typ.

0.5906 typ.

0.00

4.20

0.20

5.20

0.0000

0.1654

0.0079

0.2047

8° max

2.40

0.40

3.00

0.60

0.0945

0.0157

0.1181

0.0236

10.80

1.15

6.23

4.60

9.40

16.15

0.4252

0.0453

0.2453

0.1811

0.3701

0.6358

Jul-02

SKP04N60

SKB04N60

i,v

=t +t

S F

di /dt

r r

=Q +Q

r r

10% I

r r m

di /dt

r r

r r m

90% I

Figure C. Definition of diodes

switching characteristics

τ₁

r₁

τ₂

r ₂

τ_n

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L_σ=180nH

and Stray capacity C_σ=180pF.

Jul-02

SKP04N60

SKB04N60

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Jul-02

SKB04N60 [INFINEON]

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