SKB06N60HS_07 [INFINEON]

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation; 高速IGBT在NPT技术下的Eoff 30 ％，相比上一代


型号：	SKB06N60HS_07
厂家：	Infineon
描述：	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation 高速IGBT在NPT技术下的Eoff 30 ％，相比上一代双极性晶体管
文件：	总14页 (文件大小：1189K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKB06N60HS

High Speed IGBT in NPT-technology

• 30% lower E_offcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability

PG-TO-263-3-2

- moderate E_offincrease with temperature

- very tight parameter distribution

•

High ruggedness, temperature stable behaviour

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹for target applications

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

T_j

Marking

Package

E_off

K06N60HS

SKB06N60HS

Maximum Ratings

Parameter

600V

80µJ

PG-TO-263-3-2

150°C

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage static

I_{Fpul s}

V_{G E}

±20

±30

transient (t_p<1µs, D<0.05)

Short circuit withstand time²⁾

t_SC

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

Power dissipation

P_{t ot}

T_C= 25°C

Operating junction and storage temperature

T_j,

-55...+150

°C

T_stg

Time limited operating junction temperature for t < 150h

Soldering temperature (reflow soldering, MSL1)

T_j(tl)

175

245

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

R_{t hJC}

R_{t hJCD}

R_{t hJA}

1.85

4.5

K/W

Thermal resistance,

junction – ambient

SMD version, device on PCB¹⁾

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

600

_{G E}=0V, I_C=500µA

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=6A

T_j=25°C

2.8

3.5

3.15

4.00

T_j=150°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=6A

1.5

1.55

2.05

T_j=25°C

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{G E(t h)}

I_CES

I_C=200µA,V_CE=V_GE

V_CE=600V,V_GE=0V

µA

2000

T_j=25°C

T_j=150°C

Gate-emitter leakage current

Transconductance

I_GES

g_fs

_CE=0V,V_{G E}=20V

_CE=20V, I_C=6A

100

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

_CE=25V,

_{G E}=0V,

350

f=1MHz

Q_Gate

_CC=480V, I_C=6A

_{G E}=15V

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Short circuit collector current²⁾

I_{C( SC)}

_{G E}=15V,t_SC≤10µs

V_CC≤ 400V,

T_j≤ 150°C

¹⁾Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_{t s}

196

0.10

0.09

0.19

T_j=25°C,

_CC=400V,I_C=6A,

_{G E}=0/15V,

R_G=50Ω

L_σ=60nH,

C_σ=40pF

Energy losses include

“tail” and diode

reverse recovery.

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

t_S

t_F

100

220

315

T_j=25°C,

V_R=400V, I_F=6A,

di_F/dt=626A/µs

Diode reverse recovery charge

Q_rr

A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

recovery current during t_b

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_{t s}

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_{t s}

0.11

0.08

0.19

216

T_j=150°C

_CC=400V,I_C=6A,

_{G E}=0/15V,

R_G= 8Ω

L_σ=60nH,

C_σ=40pF

Energy losses include

“tail” and diode

reverse recovery.

T_j=150°C

_CC=400V,I_C=6A,

_{G E}=0/15V,

R_G= 50Ω

L_σ=60nH,

C_σ=40pF

0.15

0.12

0.27

Energy losses include

“tail” and diode

reverse recovery.

²⁾Leakage inductance L_σand Stray capacity C_σdue to test circuit in Figure E.

¹⁾Leakage inductance L_σand Stray capacity C_σdue to test circuit in Figure E.

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

t_S

t_F

150

123

500

8.8

T_j=150°C

V_R=400V, I_F=6A,

di_F/dt=673A/µs

Diode reverse recovery charge

Q_rr

A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

280

recovery current during t_b

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

t_P=4µs

8µs

10A

T_C=80°C

15µs

50µs

20A

10A

T_C=110°C

200µs

1ms

I_c

0,1A

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25°C,

(T_j≤ 150°C, D = 0.5, V_CE= 400V,

T_j≤150°C;V_GE=15V)

V_GE= 0/+15V, R_G= 50Ω)

10A

60W

40W

20W

25°C

50°C

75°C

100°C

125°C

25°C

75°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≤ 15V, T_j≤ 150°C)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

_GE=20V

15V

13V

11V

V_GE=20V

15V

13V

11V

15A

10A

15A

10A

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

T_J=150°C

5,5V

5,0V

25°C

-55°C

15A

I_C=12A

4,5V

4,0V

3,5V

3,0V

2,5V

2,0V

1,5V

1,0V

10A

I_C=6A

I_C=3A

-50°C

0°C

50°C

100°C

150°C

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=10V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

t_d(off)

t_f

100ns

10ns

1ns

t_d(off)

100 ns

10 ns

1 ns

t_f

t_d(on)

t_r

10A

0Ω

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J=150°C,

V_CE=400V, V_GE=0/15V, R_G=50Ω,

Dynamic test circuit in Figure E)

V_CE=400V, V_GE=0/15V, I_C=6A,

Dynamic test circuit in Figure E)

t_d(off)

5,0V

4,5V

4,0V

3,5V

3,0V

2,5V

2,0V

1,5V

100ns

max.

typ.

t_f

min.

t_r

t_d(on)

0°C

10ns

-50°C

0°C

50°C

100°C

150°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.5mA)

function of junction temperature

(inductive load, V_CE=400V,

V_GE=0/15V, I_C=6A, R_G=50Ω,

Dynamic test circuit in Figure E)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

*) E_oninclude losses

due to diode recovery

*) Eon include losses

due to diode recovery

E_ts*

0,6 mJ

0,5 mJ

0,4 mJ

0,3 mJ

0,2 mJ

0,1 mJ

0,0 mJ

E_ts*

0,5mJ

0,4mJ

0,3mJ

0,2mJ

0,1mJ

0,0mJ

E_on*

E_off

0,0A

2,5A

5,0A

7,5A

10,0A

0Ω

50Ω

100Ω

150Ω

200Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

V_CE=400V, V_GE=0/15V, R_G=50Ω,

Dynamic test circuit in Figure E)

V_CE=400V, V_GE=0/15V, I_C=6A,

Dynamic test circuit in Figure E)

*) E_oninclude losses

due to diode recovery

D=0.5

0⁰K/W

0.2

0.1

0,2mJ

0,1mJ

0,0mJ

E_ts*

0.05

0^-1K/W

R , ( K / W )

0.705

τ , ( s )

0.02

0.0341

0.561

3.74E-3

3.25E-4

E_on*

0.583

0.01

0^-2K/W

E_off

R₁

R₂

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

0^-3K/W

0°C

50°C

100°C

150°C

1µs

10µs 100µs 1ms 10ms 100ms

T_J, JUNCTION TEMPERATURE

t_P, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction

temperature

Figure 16. IGBT transient thermal resistance

(D = t_p/ T)

(inductive load, V_CE=400V,

V_GE=0/15V, I_C=6A, R_G=50Ω,

Dynamic test circuit in Figure E)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

15V

10V

C_iss

120V

480V

100pF

C_oss

C_rss

10pF

10V

20V

0nC

10nC

20nC

30nC

40nC

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(I_C=6 A)

(V_GE=0V, f = 1 MHz)

70A

60A

50A

40A

30A

20A

10A

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

10V

12V

14V

16V

18V

V_GE, GATE-EMITETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(V_CE≤ 400V, T_j≤ 150°C)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

300ns

200ns

100ns

0ns

I_F=12A

0,50µC

0,25µC

0,00µC

I_F=12A

I_F=6A

I_F=3A

I_F=6A

I_F=3A

200A/µs

400A/µs

600A/µs

800A/µs

200A/µs

400A/µs

600A/µs

800A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(V_R=400V, T_J=150°C,

Figure 22. Typical reverse recovery charge

as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R=400V, T_J=150°C,

Dynamic test circuit in Figure E)

-400A/µs

-300A/µs

-200A/µs

-100A/µs

-0A/µs

10,0A

I_F=3A

7,5A

I_F=12A

I_F=6A

5,0A

2,5A

200A/µs

400A/µs

600A/µs

800A/µs

200A/µs

400A/µs

600A/µs

800A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current

slope

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=400V, T_J=150°C,

Dynamic test circuit in Figure E)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

T_J=-55°C

25°C

2,0V

1,8V

1,6V

1,4V

1,2V

10A

150°C

I_F12A

I_F=6A

I_F=3A

-50°C

0°C

50°C

100°C

150°C

0,0V

0,5V

1,0V

1,5V

V_F, FORWARD VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

Figure 26. Typical diode forward voltage as a

function of junction temperature

a function of forward voltage

D=0.5

0⁰K/W

0.2

0.1

R , ( K / W )

0.523

τ , ( s )

7.25*10^-2

6.44*10^-3

7.13*10^-4

7.16*10^-5

0.05

0.02

0.550

0.835

0^-1K/W

1.592

R₁

R₂

0.01

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

0^-2K/W

1µs

10µs 100µs 1ms

t_P, PULSE WIDTH

10ms 100ms

Figure 27. Diode transient thermal

impedance as a function of pulse

width

(D=t_P/T)

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

PG-TO-263-3-2

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L_σ=60nH

and Stray capacity C_σ=40pF.

Figure B. Definition of switching losses

Published by

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Rev. 2.3 Oct.07

Power Semiconductors

SKB06N60HS_07 [INFINEON]

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