SKB06N60HSATMA1 [INFINEON]
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;型号: | SKB06N60HSATMA1 |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 电动机控制 栅 晶体管 |
文件: | 总14页 (文件大小:1188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SKB06N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
C
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
PG-TO-263-3-2
- moderate Eoff increase with temperature
- very tight parameter distribution
•
•
•
•
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Tj
Marking
Package
Eoff
K06N60HS
SKB06N60HS
Maximum Ratings
Parameter
600V
6A
80µJ
PG-TO-263-3-2
150°C
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
VCE
IC
600
V
A
12
6
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpul s
-
24
24
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
IF
12
6
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
IFpul s
VG E
24
±20
±30
V
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
tSC
10
µs
W
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation
Pt ot
68
TC = 25°C
Operating junction and storage temperature
Tj ,
-55...+150
°C
Tstg
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Tj(tl)
-
175
245
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Rt hJC
Rt hJCD
Rt hJA
Rt hJA
1.85
4.5
62
K/W
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR)CES
600
-
-
V
V
G E=0V, IC =500µA
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =6A
Tj =25°C
2.8
3.5
3.15
4.00
Tj =150°C
Diode forward voltage
VF
VG E=0V, IF =6A
1.5
1.55
2.05
2.05
Tj =25°C
Tj =150°C
-
Gate-emitter threshold voltage
Zero gate voltage collector current
VG E(t h)
ICES
3
4
5
IC =200µA,VCE=VGE
VCE=600V,VGE=0V
µA
-
-
-
-
40
2000
Tj =25°C
Tj =150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
CE=0V,VG E=20V
CE=20V, IC =6A
-
-
-
4
100
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
CE=25V,
G E=0V,
-
-
-
-
350
50
23
pF
f=1MHz
V
V
QGate
CC =480V, IC =6A
G E=15V
33
nC
nH
A
Internal emitter inductance
LE
-
-
7
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC( SC)
48
V
G E=15V,tSC≤10µs
VCC ≤ 400V,
Tj ≤ 150°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
11
11
196
41
0.10
0.09
0.19
ns
Tj =25°C,
V
V
CC =400V,IC =6A,
G E=0/15V,
RG=50Ω
2)
Lσ =60nH,
2)
Cσ =40pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
tF
-
-
-
-
-
-
100
24
76
220
7
315
ns
Tj =25°C,
VR =400V, IF =6A,
diF/dt=626A/µs
Diode reverse recovery charge
Qrr
nC
A
A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr /dt
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
td(on)
tr
td(off)
tf
Eon
Eoff
Et s
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
3
63
59
0.11
0.08
0.19
10
13
216
29
ns
Tj =150°C
V
V
CC =400V,IC =6A,
G E=0/15V,
RG= 8Ω
1)
Lσ =60nH,
1)
Cσ =40pF
mJ
ns
Energy losses include
“tail” and diode
reverse recovery.
Tj =150°C
V
V
CC =400V,IC =6A,
G E=0/15V,
RG= 50Ω
1)
Lσ =60nH,
1)
Cσ =40pF
0.15
0.12
0.27
mJ
Energy losses include
“tail” and diode
reverse recovery.
2) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.
1) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.
3
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
tF
-
-
-
-
-
-
150
27
123
500
8.8
ns
Tj =150°C
VR =400V, IF =6A,
diF/dt=673A/µs
Diode reverse recovery charge
Qrr
nC
A
A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr /dt
280
recovery current during tb
4
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
tP=4µs
8µs
10A
1A
TC=80°C
15µs
50µs
20A
10A
0A
TC=110°C
200µs
1ms
Ic
Ic
DC
0,1A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(D = 0, TC = 25°C,
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
Tj ≤150°C;VGE=15V)
VGE = 0/+15V, RG = 50Ω)
10A
5A
60W
40W
20W
0W
0A
25°C
50°C
75°C
100°C
125°C
25°C
75°C
125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 150°C)
(VGE ≤ 15V, Tj ≤ 150°C)
5
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
V
GE=20V
15V
13V
11V
9V
VGE=20V
15V
13V
11V
9V
15A
10A
5A
15A
10A
5A
7V
7V
5V
5V
0A
0A
0V
2V
4V
6V
0V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 150°C)
TJ=150°C
5,5V
5,0V
25°C
-55°C
15A
IC=12A
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
10A
IC=6A
IC=3A
5A
0A
-50°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=10V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
td(off)
tf
100ns
10ns
1ns
td(off)
100 ns
10 ns
1 ns
tf
td(on)
td(on)
tr
tr
0A
5A
10A
0Ω
50Ω
100Ω
150Ω
200Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=50Ω,
Dynamic test circuit in Figure E)
VCE=400V, VGE=0/15V, IC=6A,
Dynamic test circuit in Figure E)
td(off)
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
100ns
max.
typ.
tf
min.
tr
td(on)
0°C
10ns
-50°C
0°C
50°C
100°C
150°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.5mA)
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=6A, RG=50Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
*) Eon include losses
due to diode recovery
*) Eon include losses
due to diode recovery
Ets*
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
Ets*
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
Eon*
Eon*
Eoff
Eoff
0,0A
2,5A
5,0A
7,5A
10,0A
0Ω
50Ω
100Ω
150Ω
200Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=50Ω,
Dynamic test circuit in Figure E)
VCE=400V, VGE=0/15V, IC=6A,
Dynamic test circuit in Figure E)
*) Eon include losses
due to diode recovery
D=0.5
00K/W
0.2
0.1
0,2mJ
0,1mJ
0,0mJ
Ets*
0.05
0-1K/W
R , ( K / W )
0.705
τ , ( s )
0.02
0.0341
0.561
3.74E-3
3.25E-4
Eon*
0.583
0.01
0-2K/W
Eoff
R1
R2
C1=τ1/R1 C2=τ2/R2
single pulse
0-3K/W
0°C
50°C
100°C
150°C
1µs
10µs 100µs 1ms 10ms 100ms
1s
TJ, JUNCTION TEMPERATURE
tP, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. IGBT transient thermal resistance
(D = tp / T)
(inductive load, VCE=400V,
VGE=0/15V, IC=6A, RG=50Ω,
Dynamic test circuit in Figure E)
8
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
15V
10V
5V
Ciss
120V
480V
100pF
Coss
Crss
10pF
0V
0V
10V
20V
0nC
10nC
20nC
30nC
40nC
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(IC=6 A)
(VGE=0V, f = 1 MHz)
70A
60A
50A
40A
30A
20A
10A
0A
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
10V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
9
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
300ns
200ns
100ns
0ns
IF=12A
0,50µC
0,25µC
0,00µC
IF=12A
IF=6A
IF=3A
IF=6A
IF=3A
200A/µs
400A/µs
600A/µs
800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR=400V, TJ=150°C,
Figure 22. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
-400A/µs
-300A/µs
-200A/µs
-100A/µs
-0A/µs
10,0A
IF=3A
7,5A
IF=12A
IF=6A
5,0A
2,5A
200A/µs
400A/µs
600A/µs
800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current
slope
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, TJ=150°C,
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
TJ=-55°C
25°C
2,0V
1,8V
1,6V
1,4V
1,2V
10A
8A
6A
4A
2A
0A
150°C
IF12A
IF=6A
IF=3A
-50°C
0°C
50°C
100°C
150°C
0,0V
0,5V
1,0V
1,5V
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
Figure 26. Typical diode forward voltage as a
function of junction temperature
a function of forward voltage
D=0.5
00K/W
0.2
0.1
R , ( K / W )
0.523
τ , ( s )
7.25*10-2
6.44*10-3
7.13*10-4
7.16*10-5
0.05
0.02
0.550
0.835
0-1K/W
1.592
R1
R2
0.01
single pulse
C1=τ1/R1 C2=τ2/R2
0-2K/W
tP, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
11
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
PG-TO-263-3-2
12
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
Figure B. Definition of switching losses
Published by
13
Rev. 2.3 Oct.07
Power Semiconductors
SKB06N60HS
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/6/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
14
Rev. 2.3 Oct.07
Power Semiconductors
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