SBM51414X [INFINEON]
BIDI⑩Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, Medium Power; BIDI⑩Transceiver光模块1300纳米Emitting- / 1550nm处接收功能，中等功率
| 型号： | SBM51414X |
| 厂家： | 
Infineon |
| 描述： | BIDI⑩Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, Medium Power |
| 文件： | 总7页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBM 51414X
BIDI Transceiver Optical Module
1300 nm Emitting-/1550 nm Receiving Function,
Medium Power
• Designed for application in passive-optical networks
• Integrated Wavelength Division Multiplexer
• Bidirectional Transmission in 2nd and 3rd optical window
• Laser diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary Photodiode at rear mirror for monitoring and
control of radiant power
• Low noise/high bandwidth PIN diode
• With singlemode fiber pigtail
Type
Ordering Code
Q62702-P3049
Q62702-Pxxxx
Connector
DIN
SBM 51414A
SBM 51414G
FC / PC
Component with other connector types on request.
Maximum Ratings
Output power ratings refer to the optical port. The operating temperature of the submount is
identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
Storage temperature range
Soldering temperature
TC
− 40 … + 85
− 40 … + 85
260
°C
°C
°C
Tstg
TS
tmax = 30 s, 2 mm distance from bottom edge of
case
Laser Diode
Forward current
Radiant power CW
Reverse voltage
IF max
Φe
150
2
mA
mW
V
VR max
2
Semiconductor Group
1
02.95
SBM 51414X
Maximum Ratings (cont’d)
Parameter
Symbol
Values
Unit
Monitor Diode
Forward current
Reverse voltage
IF max
2
mA
V
VR max
10
PIN Photodiode
Forward current
IF max
VBR
2
mA
V
Reverse voltage
10
1.5
Maximum optical power into the optical port
Φport max
mW
Characteristics
All optical data refer to the optical port, TC = 25 °C.
Parameter
Symbol
Values
Unit
Laser Diode
Optical output power
Φe
λ
> 1.2
mW
Emission wavelength center of range
1270 … 1350 nm
Φe = 0.5 mW
Spectral bandwidth Φe = 0.5 mW (RMS)
Threshold current (− 40 … + 85 °C)
Forward voltage Φe = 0.5 mW
∆λ
5
nm
mA
V
Ith
2 … 45
< 1.5
VF
Radiant power at Ith
Φeth
∆IF
∆IF
dP/dI
rS
< 50
µW
mA
mA
%
Current above threshold at 25 °C, Φe = 1 mW
Current above threshold, Φe = 1 mW
Variation of 1st derivative of P/I (0.1 … 1mW)
Differential series resistance
10 … 35
7 … 50
− 30…30
< 8
Ω
Rise and fall time (10 % - 90 %)
tr, tf
< 1
ns
Semiconductor Group
2
SBM 51414X
Characteristics (cont’d)
Parameter
Symbol
Values
< 0.5
200
Unit
nm / K
nA
Laser Diode (cont’d)
Temperature coefficient of wavelength
TCλ
Monitor Diode
Dark current, VR = 2 V, Φe = 0, TC = 85 °C
Photocurrent, VR = 2 V, Φe = 0.5 mW
Capacitance, VR = 2 V, f = 1 MHz
Tracking error, VR = 2 V (see note 1)
IR
IP
200 … 1200
< 10
µA
pF
dB
C2
TE
− 1 … 1
Detector
Dark current, VR = 2 V, Φe = 0, TC = 85 °C
Spectral sensitivity, VR = 2 V, λ = 1550 nm
Capacitance, VR = 2 V, f = 1 MHz
Rise and fall time, VR = 2 V, 10 % - 90 %
IR
< 50
> 0.65
< 1.5
< 1
nA
Sλ
A / W
pF
C2
tr, tf
ns
Module
Optical crosstalk (see note 2)
CRT
< − 47
dB
Note 1: The tracking error TE is the variation rate of Φe at constant current Imon over a
specified temperature range and relative to the reference point: Imon,ref = Imon
(T = 25 °C, Φe = 0.5 mW). Thus, TE is given by:
[ ]
TC − Φe 25 °C
Φe
[
]
[ ]
TE dB = 10 × log
[
]
Φe 25 °C
Note 2: Optical Crosstalk is defined as CRT = 10 × log (IDet,0/IDet,1) with: IDet,0 the photo-
current with Φe = 0.5 mW CW laser operation, VR = 2 V, with minimum optical
return loss from fiber end and IDet,1 the photocurrent without Φe, but 0.5 mW
optical input power, λ = 1550 nm.
Semiconductor Group
3
SBM 51414X
Accompanying Information
T = 25 °C:
Threshold current, current above threshold for 1 mW output power, monitor
current for 0.5 mW output power, peak wavelength.
T = 85 °C:
Threshold current, current above threshold for 1 mW output power, monitor
current for 0.5 mW output power.
End of Life Values
Parameter
Symbol
Ith
Values
< 60
Unit
mA
Threshold current at T = 85 °C
Current above threshold, over full temperature
range, at Imon,ref = Imon
∆IF
7 … 70
mA
(T = 25 °C, Φe = 1 mW, BOL)
Tracking error (see note 1)
TE
IR
− 1.5 … 1.5
< 400
dB
nA
µA
Detector dark current, VR = 2 V, T = 85 °C
Monitor dark current, VR = 2 V, T = 85 °C
IR
< 1
Fiber Pigtail
Type: single mode, silica
Parameter
Values
9 ± 1
125 ± 2
< 1
Unit
Mode field diameter
Cladding diameter
Mode field/cladding concentricity error
Cladding non-circularity
Mode field non-circularity
Cut-off wavelength
Jacket diameter
µm
µm
µm
%
< 2
< 6
%
> 1270
0.9 ± 0.1
> 30
nm
mm
mm
N
Bending radius
Tensile strength fiber/case
Length
> 5
1 ± 0.2
m
Semiconductor Group
4
SBM 51414X
Laser Diode
Relative Radiant Power
Radiant Power in Singlemode Fiber
Φe = f(λ)
1.2
1
100
90
80
70
60
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0
1306 1308 1310 1312 1314
0
10
20
30
Wavelength in nm
Forward Current in mA
Laser Forward Current
IF = f(VF)
Monitor Diode Dark Current IR = f(TA)
Φport = 0, VR = 5 V
100
90
80
70
60
50
40
30
20
10
0
1000
100
10
1
0.1
0.01
0
0.4
0.8
1.2
1.6
-50
0
50
100
Forward Voltage in V
Temperature in °C
Semiconductor Group
5
SBM 51414X
Capacitance of PIN Diode C = f(VR)
Φport = 0, f = 1 MHz
Rel. Spectral Sensitivity of PIN Diode
VR = 5 V
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0.1
1200 1400 1600 1800 2000
0.1
1
10
100
Wavelength in nm
Reverse Bias in V
Dark Current of PIN Diode IR = f(VR)
IF = f(VF)
Dark Current of PIN Diode IR = f(TA)
Φport = 0, VR = 5 V
10
1
100
10
1
0.1
0.1
0.01
0.001
0.01
0.001
0
5
10
15
20
-50
0
50
100
Reverse Bias in V
Ambient Temperature in °C
Semiconductor Group
6
SBM 51414X
Package Outlines (Dimensions in mm)
SBM 51414X
Semiconductor Group
7
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