SBM52414GPC [INFINEON]
Optoelectronic Device;型号: | SBM52414GPC |
厂家: | Infineon |
描述: | Optoelectronic Device |
文件: | 总11页 (文件大小:274K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Fiber Optics
SBM52414x
Medium Power
BIDI® Optical Standard Module
1310 nm Emitting, 1550 nm Receiving
Features
• Designed for application in passive-optical
networks
• Integrated Wavelength Division
Multiplexer (WDM)
• Bi-Directional Transmission in 2nd and 3rd
optical window
• Single fiber solution
• FP-Laser Diode with Multi-Quantum Well structure
• Class 3B Laser Product
• Suitable for bit rates up to 1.25 Gbit/s
• Ternary Photodiode at rear mirror for monitoring and control of radiant power
• Low noise / high bandwidth PIN diode
• Hermetically sealed subcomponents, similar to TO 46
• With singlemode fiber pigtail
BIDI® is a registered trademark of Infineon Technologies
Data Sheet
1
2002-05-01
SBM52414x
Pin Configuration
Pin Configuration
Transmitter (bottom view)
2
Pinning 1
(on request)
LD
3
2.54 mm
1
MD
2
4
1
3
4
2
Pinning 2
(Standard)
LD
1
3
MD
4
Figure 1
Transmitter
Receiver (bottom view)
2.54 mm
Pinning 1
(Standard)
1
3
3
Pinning 1
1
2
2
2.54 mm
3
Pinning 2
(on request)
3
Pinning 2
1
1
2
2
Figure 2
Receiver
Available Pinnings
Type
Transmitter
2 (Standard)
1 (on request)
Receiver
SBM52414x
SBM51414x
1 (Standard)
1 (on request)
Other Pinnings on request / different drawing set required for non standard pinning
Data Sheet
2
2002-05-01
SBM52414x
Description
Description
The Infineon module for bidirectional optical transmission has been designed for
different optical networks structures.
In the last few years the structure has changed from point to point planned for Broad
band ISDN to a point to multipoint passive optical network (PON) architecture for the
optical network in the subscriber loop.
A transceiver can be realized with discrete elements (Figure 3). Transmitter and
receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength
independent or WDM).
Transmitter
Coupler
Receiver
2:1 or 2:2
3 dB wavelength independent
or wavelength division multiplexing
Figure 3
Realization with Discrete Elements
Infineon has realized this transceiver configuration in a compact module called a BIDI®
(Figure 4).
This module is especially suitable for separating the opposing signals at the ends of a
link. It replaces a discrete solution with a transmitter, receiver and coupler.
The basic devices are a laser diode and a photodiode, each in a TO package, plus the
filter in the beam path. A lens in the TO laser concentrates the light and enables it to be
launched into the single-mode fiber of the module. In the same way the light from the
fiber is focused onto the small, light-sensitive area of the photodiode to produce a high
photo current. The mirror for coupling out the received signal is arranged in the beam so
that the transmitter and receiver are at right angles to each other. This means the
greatest possible degree of freedom in the layout of the electric circuit.
Data Sheet
3
2002-05-01
SBM52414x
Description
Glass Lens
Beam Splitter
Fiber
TO-
Laser
TO-Detector
Figure 4
Compact Realization of the Transceiver in One Module
A decisive advantage of the module is its use of standard TO components. These
devices, produced in large quantities, are hermetically sealed and tested before they are
built in. This makes a very substantial contribution to the excellent reliability of the
module. The solid metal package of the module serves the same purpose. It allows the
use of modern laser welding techniques for reliable fixing of the different elements and
the fiber holder.
Data Sheet
4
2002-05-01
SBM52414x
Technical Data
Technical Data
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Module
Operating temperature range at case
Storage temperature range
TC
–40
–40
85
°C
Tstg
TS
85
Soldering temperature (tmax = 10 s,
260
2 mm distance from bottom edge of case)
Laser Diode
Direct forward current
Radiant power CW
Reverse Voltage
Monitor Diode
IF max
PF, rad
VR
120
2
mA
mW
V
2
Reverse Voltage
Forward Current
VR
IF
10
2
V
mA
Receiver Diode
Reverse Voltage
Forward Current
VR
IF
10
2
V
mA
mW
Optical power into the optical port
Pport
1.5
Data Sheet
5
2002-05-01
SBM52414x
Technical Data
The electro-optical characteristics described in the following tables are only valid for use
within the specified maximum ratings or under the recommended operating conditions.
Transmitter Electro-Optical Characteristics
Parameter
Symbol
Limit Values
typ.
Unit
min.
max.
Optical output power
(maximum)
PF, max
1.2
mW
nm
Emission wavelength center of λtrans
range, PF = 0.5 PF, max.
1270
1350
Spectral width (RMS)
σλ
5
Temperature coefficient of
wavelength
0.5
nm/K
mA
TC
Threshold current
Ith
2
45
(whole temperature range)
Forward voltage, PF = 0.5 PF, max. VF
1.5
50
V
Radiant power at Ith
Pth
µW
mW/A
%
Slope efficiency (–40...85°C)
η
20
100
30
Variation of 1st derivative of P/I Svar
–30
(0.1 to 1.0 mW)
Differential series resistance
Rise time (10%–90%)
Fall time (10%–90%)
RS
tr
8
Ω
100
270
200
500
ps
tf
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
200
1500
10
Dark current, VR = 5 V, PF = 0, T = Tmax
Photocurrent, VR = 5 V, PF = 0.5 PF, max
Capacitance, VR = 5 V, f = 1 MHz
IR
nA
µA
pF
dB
IP
50
C5
TE
Tracking error1), VR = 5 V
–1
1
1)
The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature
range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:
PF[TC]
------------------------
TE[dB] = 10 × log
PF[25°C]
Data Sheet
6
2002-05-01
SBM52414x
Technical Data
Receiver Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Spectral sensitivity, VR = 5 V, λ = 1550 nm Srec
0.65
1
1
A/W
ns
Rise and fall time (10%–90%)
tr; tf
RL = 50 Ω, VR = 5 V
Total capacitance
VR = 5 V, Popt = 0, f = 1 MHz
1.5
50
pF
nA
C
Dark current, VR = 5 V, Popt = 0
ID
Module Electro-Optical Characteristics
Parameter
Optical Crosstalk1)
Symbol Max.
CRT –47
Unit
dB
1)
Optical Crosstalk is defined as
IDet.0
-----------
CRT[dB] = 10 × log
IDet.1
with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and
Det,1: the photocurrent without PF, but 0.5 PF, max. optical input power, λ = 1550 nm.
I
End of Life Time Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
60
Threshold current at T = Tmax
Ith
mA
Current above threshold, over full
temperature range, at Imon, ref = Imon
(T = 25°C, PF = 0.5 PF, max., BOL)
∆IF
7
70
Tracking Error
TE
–1.5
1.5
400
1
dB
nA
µA
Detector Dark Current, VR = 2 V, T = Tmax IR
Monitor Dark Current, VR = 2 V, T = Tmax
IR
Data Sheet
7
2002-05-01
SBM52414x
Fiber Data
Fiber Data
The mechanical fiber characteristics are described in the following table.
Fiber Characteristics
Parameter
Limit Values
Unit
min.
8
typ.
9
max.
10
127
1
Mode Field Diameter
Cladding Diameter
µm
123
125
Mode Field/Cladding Concentricity Error
Cladding Non-circularity
Mode Field Non-circularity
Cut off Wavelength
2
%
6
1270
0.8
30
nm
Jacket Diameter
1
mm
Bending Radius
Tensile Strength Fiber Case
Length
5
N
0.8
1.2
m
Data Sheet
8
2002-05-01
SBM52414x
Eye Safety
Eye Safety
Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams.
Especially do not look directly into the laser diode or the collimated laser beam when the
diode is activated.
Class 3B Laser Product According to IEC 60825-1
INVISIBLE LASER RADIATION
AVOID EXPOSURE TO BEAM
Class 3B Laser Product
Figure 5
Required Labels
Class IIIb Laser Product According to FDA Regulations Complies with
21 CFR 1040.10 and 1040.11
LASER RADIATION - AVOID
DIRECT EXPOSURE TO BEAM
SEMICONDUCTOR LASER
INVISIBLE RADIATION
CLASS IIIb LASER PRODUCT
Figure 6
Required Label
Laser Data
Wavelength
1310 nm
Maximum total output power
Beam divergence (1/e2)
less than 50 mW
10°
Data Sheet
9
2002-05-01
SBM52414x
Package Outlines
Package Outlines
1) 1mm aboveTO-bottom
connector type
Dimensions in mm
Figure 7
Connector Options
Model
Type
SBM52414G
SBM51414G
SM FC/PC
SBM52414N
SBM51414N
SM SC/PC 0°
SBM52414Z
SBM51414Z
SM without connector
Data Sheet
10
2002-05-01
SBM52414x
Revision History:
2002-05-01
DS0
Previous Version:
Page
Subjects (major changes since last revision)
Document’s layout has been changed: 2002-Aug.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com.
Edition 2002-05-01
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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