SBM52414N [INFINEON]

Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving; 中功率BIDI光标准模块1310纳米发光, 1550纳米接收
SBM52414N
型号: SBM52414N
厂家: Infineon    Infineon
描述:

Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
中功率BIDI光标准模块1310纳米发光, 1550纳米接收

文件: 总11页 (文件大小:274K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Fiber Optics  
SBM52414x  
Medium Power  
BIDI® Optical Standard Module  
1310 nm Emitting, 1550 nm Receiving  
Features  
• Designed for application in passive-optical  
networks  
• Integrated Wavelength Division  
Multiplexer (WDM)  
• Bi-Directional Transmission in 2nd and 3rd  
optical window  
• Single fiber solution  
• FP-Laser Diode with Multi-Quantum Well structure  
• Class 3B Laser Product  
• Suitable for bit rates up to 1.25 Gbit/s  
• Ternary Photodiode at rear mirror for monitoring and control of radiant power  
• Low noise / high bandwidth PIN diode  
• Hermetically sealed subcomponents, similar to TO 46  
• With singlemode fiber pigtail  
BIDI® is a registered trademark of Infineon Technologies  
Data Sheet  
1
2002-05-01  
SBM52414x  
Pin Configuration  
Pin Configuration  
Transmitter (bottom view)  
2
Pinning 1  
(on request)  
LD  
3
2.54 mm  
1
MD  
2
4
1
3
4
2
Pinning 2  
(Standard)  
LD  
1
3
MD  
4
Figure 1  
Transmitter  
Receiver (bottom view)  
2.54 mm  
Pinning 1  
(Standard)  
1
3
3
Pinning 1  
1
2
2
2.54 mm  
3
Pinning 2  
(on request)  
3
Pinning 2  
1
1
2
2
Figure 2  
Receiver  
Available Pinnings  
Type  
Transmitter  
2 (Standard)  
1 (on request)  
Receiver  
SBM52414x  
SBM51414x  
1 (Standard)  
1 (on request)  
Other Pinnings on request / different drawing set required for non standard pinning  
Data Sheet  
2
2002-05-01  
SBM52414x  
Description  
Description  
The Infineon module for bidirectional optical transmission has been designed for  
different optical networks structures.  
In the last few years the structure has changed from point to point planned for Broad  
band ISDN to a point to multipoint passive optical network (PON) architecture for the  
optical network in the subscriber loop.  
A transceiver can be realized with discrete elements (Figure 3). Transmitter and  
receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength  
independent or WDM).  
Transmitter  
Coupler  
Receiver  
2:1 or 2:2  
3 dB wavelength independent  
or wavelength division multiplexing  
Figure 3  
Realization with Discrete Elements  
Infineon has realized this transceiver configuration in a compact module called a BIDI®  
(Figure 4).  
This module is especially suitable for separating the opposing signals at the ends of a  
link. It replaces a discrete solution with a transmitter, receiver and coupler.  
The basic devices are a laser diode and a photodiode, each in a TO package, plus the  
filter in the beam path. A lens in the TO laser concentrates the light and enables it to be  
launched into the single-mode fiber of the module. In the same way the light from the  
fiber is focused onto the small, light-sensitive area of the photodiode to produce a high  
photo current. The mirror for coupling out the received signal is arranged in the beam so  
that the transmitter and receiver are at right angles to each other. This means the  
greatest possible degree of freedom in the layout of the electric circuit.  
Data Sheet  
3
2002-05-01  
SBM52414x  
Description  
Glass Lens  
Beam Splitter  
Fiber  
TO-  
Laser  
TO-Detector  
Figure 4  
Compact Realization of the Transceiver in One Module  
A decisive advantage of the module is its use of standard TO components. These  
devices, produced in large quantities, are hermetically sealed and tested before they are  
built in. This makes a very substantial contribution to the excellent reliability of the  
module. The solid metal package of the module serves the same purpose. It allows the  
use of modern laser welding techniques for reliable fixing of the different elements and  
the fiber holder.  
Data Sheet  
4
2002-05-01  
SBM52414x  
Technical Data  
Technical Data  
Absolute Maximum Ratings  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
max.  
Module  
Operating temperature range at case  
Storage temperature range  
TC  
–40  
–40  
85  
°C  
Tstg  
TS  
85  
Soldering temperature (tmax = 10 s,  
260  
2 mm distance from bottom edge of case)  
Laser Diode  
Direct forward current  
Radiant power CW  
Reverse Voltage  
Monitor Diode  
IF max  
PF, rad  
VR  
120  
2
mA  
mW  
V
2
Reverse Voltage  
Forward Current  
VR  
IF  
10  
2
V
mA  
Receiver Diode  
Reverse Voltage  
Forward Current  
VR  
IF  
10  
2
V
mA  
mW  
Optical power into the optical port  
Pport  
1.5  
Data Sheet  
5
2002-05-01  
SBM52414x  
Technical Data  
The electro-optical characteristics described in the following tables are only valid for use  
within the specified maximum ratings or under the recommended operating conditions.  
Transmitter Electro-Optical Characteristics  
Parameter  
Symbol  
Limit Values  
typ.  
Unit  
min.  
max.  
Optical output power  
(maximum)  
PF, max  
1.2  
mW  
nm  
Emission wavelength center of λtrans  
range, PF = 0.5 PF, max.  
1270  
1350  
Spectral width (RMS)  
σλ  
5
Temperature coefficient of  
wavelength  
0.5  
nm/K  
mA  
TC  
Threshold current  
Ith  
2
45  
(whole temperature range)  
Forward voltage, PF = 0.5 PF, max. VF  
1.5  
50  
V
Radiant power at Ith  
Pth  
µW  
mW/A  
%
Slope efficiency (–40...85°C)  
η
20  
100  
30  
Variation of 1st derivative of P/I Svar  
–30  
(0.1 to 1.0 mW)  
Differential series resistance  
Rise time (10%–90%)  
Fall time (10%–90%)  
RS  
tr  
8
100  
270  
200  
500  
ps  
tf  
Monitor Diode Electro-Optical Characteristics  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
max.  
200  
1500  
10  
Dark current, VR = 5 V, PF = 0, T = Tmax  
Photocurrent, VR = 5 V, PF = 0.5 PF, max  
Capacitance, VR = 5 V, f = 1 MHz  
IR  
nA  
µA  
pF  
dB  
IP  
50  
C5  
TE  
Tracking error1), VR = 5 V  
–1  
1
1)  
The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature  
range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:  
PF[TC]  
------------------------  
TE[dB] = 10 × log  
PF[25°C]  
Data Sheet  
6
2002-05-01  
SBM52414x  
Technical Data  
Receiver Diode Electro-Optical Characteristics  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
max.  
Spectral sensitivity, VR = 5 V, λ = 1550 nm Srec  
0.65  
1
1
A/W  
ns  
Rise and fall time (10%–90%)  
tr; tf  
RL = 50 , VR = 5 V  
Total capacitance  
VR = 5 V, Popt = 0, f = 1 MHz  
1.5  
50  
pF  
nA  
C
Dark current, VR = 5 V, Popt = 0  
ID  
Module Electro-Optical Characteristics  
Parameter  
Optical Crosstalk1)  
Symbol Max.  
CRT –47  
Unit  
dB  
1)  
Optical Crosstalk is defined as  
IDet.0  
-----------  
CRT[dB] = 10 × log  
IDet.1  
with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and  
Det,1: the photocurrent without PF, but 0.5 PF, max. optical input power, λ = 1550 nm.  
I
End of Life Time Characteristics  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
max.  
60  
Threshold current at T = Tmax  
Ith  
mA  
Current above threshold, over full  
temperature range, at Imon, ref = Imon  
(T = 25°C, PF = 0.5 PF, max., BOL)  
IF  
7
70  
Tracking Error  
TE  
–1.5  
1.5  
400  
1
dB  
nA  
µA  
Detector Dark Current, VR = 2 V, T = Tmax IR  
Monitor Dark Current, VR = 2 V, T = Tmax  
IR  
Data Sheet  
7
2002-05-01  
SBM52414x  
Fiber Data  
Fiber Data  
The mechanical fiber characteristics are described in the following table.  
Fiber Characteristics  
Parameter  
Limit Values  
Unit  
min.  
8
typ.  
9
max.  
10  
127  
1
Mode Field Diameter  
Cladding Diameter  
µm  
123  
125  
Mode Field/Cladding Concentricity Error  
Cladding Non-circularity  
Mode Field Non-circularity  
Cut off Wavelength  
2
%
6
1270  
0.8  
30  
nm  
Jacket Diameter  
1
mm  
Bending Radius  
Tensile Strength Fiber Case  
Length  
5
N
0.8  
1.2  
m
Data Sheet  
8
2002-05-01  
SBM52414x  
Eye Safety  
Eye Safety  
Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams.  
Especially do not look directly into the laser diode or the collimated laser beam when the  
diode is activated.  
Class 3B Laser Product According to IEC 60825-1  
INVISIBLE LASER RADIATION  
AVOID EXPOSURE TO BEAM  
Class 3B Laser Product  
Figure 5  
Required Labels  
Class IIIb Laser Product According to FDA Regulations Complies with  
21 CFR 1040.10 and 1040.11  
LASER RADIATION - AVOID  
DIRECT EXPOSURE TO BEAM  
SEMICONDUCTOR LASER  
INVISIBLE RADIATION  
CLASS IIIb LASER PRODUCT  
Figure 6  
Required Label  
Laser Data  
Wavelength  
1310 nm  
Maximum total output power  
Beam divergence (1/e2)  
less than 50 mW  
10°  
Data Sheet  
9
2002-05-01  
SBM52414x  
Package Outlines  
Package Outlines  
1) 1mm aboveTO-bottom  
connector type  
Dimensions in mm  
Figure 7  
Connector Options  
Model  
Type  
SBM52414G  
SBM51414G  
SM FC/PC  
SBM52414N  
SBM51414N  
SM SC/PC 0°  
SBM52414Z  
SBM51414Z  
SM without connector  
Data Sheet  
10  
2002-05-01  
SBM52414x  
Revision History:  
2002-05-01  
DS0  
Previous Version:  
Page  
Subjects (major changes since last revision)  
Document’s layout has been changed: 2002-Aug.  
For questions on technology, delivery and prices please contact the Infineon  
Technologies Offices in Germany or the Infineon Technologies Companies and  
Representatives worldwide: see our webpage at http://www.infineon.com.  
Edition 2002-05-01  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
D-81541 München, Germany  
© Infineon Technologies AG 2002.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding  
circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  

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