SBM51414GPC [INFINEON]
Optoelectronic Device;
| 型号： | SBM51414GPC |
| 厂家： | 
Infineon |
| 描述： | Optoelectronic Device 光电 |
| 文件： | 总4页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MEDIUM POWER SBM52414x
BIDI® Optical Standard Module
1310 nm Em itting, 1550 nm Receiving
Dimensions in mm
1) 1mm above TO-bottom
connector type
Absolute Maxim um Ratings
Module
Operating temperature range at case, T ............ –40 °C to 85°C
C
Storage temperature range, T ......................... –40 °C to 85°C
stg
Soldering temperature t
=10 s,
max
2 mm distance from bottom edge of case, T ...............260°C
S
Laser Diode
Direct forward current, I
......................................... 120 mA
F max
Radiant power CW, P
.................................................2 mW
F, rad
Reverse Voltage, V ............................................................... 2 V
R
Monitor Diode
Reverse Voltage, V ..............................................................10 V
R
FEATURES
Forward Current, I .............................................................2 mA
F
• Designed for application in passive-optical networks
• Integrated Wavelength Division Multiplexer (WDM)
• Bi-Directional Transm ission in 2nd and 3rd optical
w indow
Receiver Diode
Reverse Voltage, V ..............................................................10 V
R
Forward Current, I ............................................................2 mA
F
Optical power into the optical port, P
....................... 1.5 mW
port
• Single fiber solution
• FP-Laser Diode w ith Multi-Quantum Well structure
• Class 3B Laser Product
• Suitable for bit rates up to 1.25 Gbit/s
• Ternary Photodiode at rear m irror for m onitoring and
control of radiant power
• Low noise / high bandw idth PIN diode
• Herm etically sealed subcom ponents, sim ilar to TO 46
• With singlem ode fiber pigtail
BIDI® is a registered tradem ark of Infineon Technologies
Fiber Optics
MAY 2002
DESCRIPTION
TECHNICAL DATA
The electro-optical characteristics described in the following
tables are only valid for use within the specified maximum rat-
ings or under the recommended operating conditions.
The Infineon module for bidirectional optical transmission has
been designed for different optical networks structures:
In the last few years the structure has changed from point to
point planned for Broad band ISDN to a point to multipoint pas-
sive optical network (PON) architecture for the optical network
in the subscriber loop.
Transm itter Electro-Optical Characteristics
Param eter
Sym bol Min. Typ.
Max. Units
Optical output power
(maximum)
P
1.2
mW
F, max
A transceiver can be realized with discrete elements (Fig. 1).
Transmitter and receiver with pigtails are connected with a
fiber-coupler (2:1 or 2:2, wavelength independent or WDM).
Emission wavelength
center of range
λ
1270
1350 nm
trans
P =0.5 P
F
F, max.
Figure 1. Realization w ith discrete elem ents
Spectral width (RMS)
σ
5
λ
Transmitter
Temperature coeffi-
cient of wavelength
TC
0.5
nm/K
mA
Coupler
Threshold current
(whole temperature
range)
I
2
45
th
Receiver
2:1 or 2:2
3 dB wavelength independent
or wavelength division multiplexing
Forward voltage
V
1.5
V
F
P =0.5 P
F
F, max.
Infineon has realized this transceiver configuration in a compact
module called a BIDI® (Fig. 2).
Radiant power at I
th
P
50
µW
th
Slope efficiency
(–40...85°C)
η
20
100
mW/
A
This module is especially suitable for separating the opposing
signals at the ends of a link. It replaces a discrete solution with
a transmitter, receiver and coupler.
Variation of 1st
derivative of P/I
(0.1 to 1.0 mW)
S
–30
30
8
%
var
The basic devices are a laser diode and a photodiode, each in a
TO package, plus the filter in the beam path. A lens in the TO
laser concentrates the light and enables it to be launched into
the single-mode fiber of the module. In the same way the light
from the fiber is focused onto the small, light-sensitive area of
the photodiode to produce a high photo current. The mirror for
coupling out the received signal is arranged in the beam so that
the transmitter and receiver are at right angles to each other.
This means the greatest possible degree of freedom in the lay-
out of the electric circuit.
Differential series
resistance
R
Ω
S
Rise time (10% –90% )
Fall time (10% –90% )
t
t
100
270
200
500
ps
r
f
Monitor Diode Electro-Optical Characteristics
Param eter
Sym bol Min. Typ.
Max. Units
200 nA
Dark current, V =5 V,
R
I
R
P =0, T=T
F
max
Figure 2. Com pact realization of the transceiver in one
m odule
Photocurrent, V =5 V,
I
50
1500 µA
R
P
P =0.5 P
F
F, max.
Glass Lens
Beam Splitter
Capacitance, V =5 V,
R
C
10
1
pF
dB
5
f=1 MHz
(1)
Tracking error , V =5 V TE
R
–1
Fiber
TO-
Laser
Note
1. The tracking error TE is the maximum deviation of P at constant
F
current I
over a specified temperature range and relative to the
mon
reference point: I
TE is given by:
=I
(T=25°C, P =0.5 P
). Thus,
F, max.
mon,ref mon
F
PF [Tc]
TE [dB] = 10 x log
TO-Detector
PF [25 o C]
A decisive advantage of the module is its use of standard TO
components. These devices, produced in large quantities, are
hermetically sealed and tested before they are built in. This
makes a very substantial contribution to the excellent reliability
of the module. The solid metal package of the module serves
the same purpose. It allows the use of modern laser welding
techniques for reliable fixing of the different elements and the
fiber holder.
Fiber Optics
SBM52414x, Medium Power BIDI® Optical Standard Module 1310nm Emitting, 1550nm Receiving
2
Receiver Diode Electro-Optical Characteristics
FIBER DATA
The mechanical fiber characteristics are described in the follow-
ing table.
Param eter
Sym bol Min. Typ.
0.65
Max. Units
Spectral sensitivity
S
1
A/W
rec
V =5 V, λ=1550 nm
R
Fiber Characteristics
Rise and fall time
(10% –90% )
t ; t
r
1
ns
f
Param eter
Min. Typ.
Max. Units
R =50 Ω, V =5 V
L
R
Mode Field Diameter
Cladding Diameter
8
9
10
127
1
µm
Total capacitance
C
1.5
50
pF
123
125
V =5 V, P =0,
R
opt
Mode Field/Cladding
Concentricity Error
f=1 MHz
Dark current
V =5 V, P =0
I
nA
D
Cladding Non-circularity
Mode Field Non-circularity
Cut off Wavelength
Jacket Diameter
2
6
%
R
opt
Module Electro-Optical Characteristics
1270
0.8
30
nm
Param eter
Sym bol Min. Typ.
Max. Units
–47 dB
1
mm
(1)
Optical Crosstalk
CRT
Bending Radius
Note
Tensile Strength Fiber Case
Length
5
N
m
1. Optical Crosstalk is defined as
IDet.0
0.8
1.2
CRT [dB] = 10
x log
Pin Description
IDet.1
Pinning (bottom view )
Transm itter
Pin Description
with:
I
: the photocurrent with P =0.5 P , without optical input,
F, max.
Det,0
F
CW laser operation, V =2 V and
R
2
I
: the photocurrent without P , but 0.5 P
optical input
F, max.
Pinning 1
(on request)
LD
Det,1
F
power, λ=1550 nm.
3
2.54 mm
2
End of Life Tim e Characteristics
Param eter
1
MD
Sym bol Min. Typ.
Max. Units
4
1
Threshold current at
I
60
mA
th
3
2
Pinning 2
T=T
4
max
LD
4
(Standard)
Current above thresh-
old, over full tempera-
ture range, at
∆I
7
70
1
3
F
MD
I
=I
(T=25°C,
, BOL)
mon,ref mon
P =0.5 P
Receiver
F
F, max.
Tracking Error
TE
–1.5
1.5
dB
nA
2.54 mm
Pinning 1
(Standard)
Detector Dark Current,
V =2 V, T=T
I
400
R
1
3
R
max
3
1
2
Monitor Dark Current,
I
1
µA
R
2
V =2 V, T=T
R
max
2.54 mm
3
Pinning 2
(on request)
3
1
1
2
2
Available Pinnings
Type
Transm itter
Receiver
1 (Standard)
1 (on request)
SBM52414x
SBM51414x
2 (Standard)
1 (on request)
Other Pinnings on request /
different drawing set required for non standard pinning
Fiber Optics
SBM52414x, Medium Power BIDI® Optical Standard Module 1310nm Emitting, 1550nm Receiving
3
EYE SAFETY
CONNECTOR OPTIONS
Model
Ensure to avoid exposure of human eyes to high power laser
diode emitted laser beams. Especially do not look directly into
the laser diode or the collimated laser beam when the diode is
activated.
Type
SBM52414G
SBM51414G
SM FC/PC
SBM52414N
SBM51414N
SM SC/PC 0°
CLASS 3B LASER PRODUCT according to IEC 60825-1
Required Labels
SBM52414Z
SBM51414Z
SM without connector
INVISIBLE LASER RADIATION
AVOID EXPOSURE TO BEAM
Class 3B Laser Product
Class IIIb LASER PRODUCT according to FDA Regulations
com plies w ith 21 CFR 1040.10 and 1040.11
Required Label
LASER RADIATION - AVOID
DIRECT EXPOSURE TO BEAM
SEMICONDUCTOR LASER
INVISIBLE RADIATION
CLASS IIIb LASER PRODUCT
Laser Data
Wavelength
1310 nm
Maximum total output power
less than 50 mW
10°
2
Beam divergence (1/e )
Published by Infineon Technologies AG
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your Infineon Technologies
offices.
© Infineon Technologies AG 2002
All Rights Reserved
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
Attention please!
The information herein is given to describe certain components and shall not be
considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties
of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Inform ation
For further information on technology, delivery terms and conditions and prices
please contact the Infineon Technologies offices or our Infineon Technologies
Representatives worldwide - see our webpage at
w w w.infineon.com /fiberoptics
Infineon Technologies AG • Fiber Optics • Wernerwerkdamm 16 • Berlin D-13623, Germany
Infineon Technologies, Inc. • Fiber Optics • 1730 North First Street • San Jose, CA 95112, USA
Infineon Technologies K.K. • Fiber Optics • Takanawa Park Tower • 20-14, Higashi-Gotanda, 3-chome, Shinagawa-ku • Tokyo 141, Japan
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BIDI⑩Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, Medium Power
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