Q67060-S6187 [INFINEON]
SIPMOS㈢ Power-Transistor; SIPMOS㈢功率三极管
| 型号： | Q67060-S6187 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS㈢ Power-Transistor |
| 文件： | 总8页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
SIPMOS® Power-Transistor
Product Summary
VDS
Features
55
7.7
80
V
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
R
DS(on),max (SMD version)
mΩ
A
I D
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
• Repetive Avalanche up to
T
jmax = 175 °C
• dv /dt rated
Type
Package
Ordering Code Marking
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67060-S6185
1N0608
Q67060-S6187
1N0608
Q67060-S6186
1N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100 °C, VGS=10 V
80
A
80
320
700
30
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
I D=80 A, R GS=25 Ω,
Avalanche energy, single pulse
mJ
V
DD=25 V
Avalanche energy, periodic2)
EAR
T j≤175 °C
I D=80 A, VDS=40 V,
di/dt =200 A/µs,
Reverse diode dv /dt 2)
dv /dt
6
kV/µs
T
j,max=175 °C
VGS
Gate source voltage
±20
300
V
Ptot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 1.0
page 1
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
-
-
0.38
-
0.5
62
K/W
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
DS=VGS, I D=240 µA
2.1
3.0
4
V
DS=25 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=25 V, VGS=0 V,
100
T j=150 °C2)
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=80 A
Gate-source leakage current
-
-
10
100 nA
R DS(on)
Drain-source on-state resistance
6.5
8
mΩ
V
GS=10 V, I D=80 A
-
-
6.2
73
7.7
SMD version
|VDS|>2|I D|R DS(on)max
I D=80 A
,
Transconductance2)
footnote on page 3
g fs
-
S
Rev. 1.0
page 2
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3660
1075
540
22
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, VDS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
53
VDD=30 V, ID=80 A,
VGS=10 V, RG=2.4 Ω
t d(off)
t f
Turn-off delay time
Fall time
54
32
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
19
62
-
nC
Q gd
-
187
-
V
V
DD=44 V, I D=80 A,
GS=0 to 10 V
Q g
125
5.4
Vplateau
Gate plateau voltage
V
A
Reverse Diode2)
I S
Diode continous forward current
Diode pulse current
-
-
-
-
80
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
VSD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
0.9
105
30
1.3
V
T j=25 °C
VR=27.5 V, I F=I S,
diF/dt =100 A/µs
t rr
ns
nC
Q rr
-
1) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed
information see Application Note APPS071E at www.infineon.com/optimos
2) Defined by design not subjected to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
1 Power dissipation
2 Drain current
Ptot=f(T C)
I D=f(T C); VGS≥10 V
350
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC=f(t p)
I D=f(VDS); T C=25 °C; D =0
parameter: t p
Z
parameter: D =t p/T
101
1000
10 µs
100 µs
limited by on-state
resistance
100
100
10
1
1 ms
10 ms
DC
0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.0
page 4
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
5 Typ. output characteristics
I D=f(VDS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: VGS
parameter: VGS
160
25
6.5 V
8 V
10 V
140
120
100
80
6 V
7 V
20
15
10
5
4.5 V
5 V
5.5 V
5.5 V
6 V
6.5 V
7 V
60
5 V
8 V
10 V
40
4.5 V
20
0
0
0
1
2
3
0
20
40
60
D [A]
80
100
120
V
DS [V]
I
7 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
175 °C
20
25 °C
0
0
2
4
6
8
0
20
40
60
80
V
GS [V]
I
D [A]
Rev. 1.0
page 5
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
9 Typical Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); VGS=VDS
R
DS(on)=f(T j); I D=80 A; VGS=10 V
V
parameter: I D
4
16
14
12
10
8
3.5
3
1200 µA
240 µA
2.5
2
6
1.5
1
4
2
0
0.5
-60
-60
-20
20
60
100
140
180
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(VSD
C =f(VDS); VGS=0 V; f =1 MHz
)
parameter: T j
104
Ciss
Coss
103
Crss
25 °C
175 °C
102
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS [V]
V
SD [V]
Rev. 1.0
page 6
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
13 Typ. Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. Avalanche Energy
AS=f(T j); VDD = 25 V; RGS=25 Ω
I
E
parameter: T j(start)
parameter: I D
100
800
80 A
25 °C
700
600
500
400
300
200
100
0
100 °C
150 °C
10
1
1
0
50
100
150
200
10
100
1000
t
AV [µs]
T j [°C]
15 Typ. gate charge
16 Drain-source breakdown voltage
V
GS=f(Q gate); I D=80 A pulsed
V
BR(DSS)=f(T j); I D=250 µA
parameter: VDD
64
62
60
58
56
54
52
50
12
44 V
11 V
10
8
6
4
2
0
-60
-20
20
60
100
140
180
0
20
40
60
80
100
120
140
Q
gate [nC]
T j [°C]
Rev. 1.0
page 7
2004-11-30
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices, please contact your
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(see address list).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2004-11-30
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