Q67060-S6201-A5 [INFINEON]
Smart Highside Power Switch; 海赛德智能电源开关
| 型号： | Q67060-S6201-A5 |
| 厂家： | 
Infineon |
| 描述： | Smart Highside Power Switch |
| 文件： | 总14页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 432 D2
Smart Highside Power Switch
Features
Product Summary
1
·
·
·
·
·
·
·
·
·
·
·
·
)
Load dump and reverse battery protection
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of V protection
V
80
58
V
V
Load dump
V -VOUT Avalanche Clamp
bb
V
V
R
4.5 ... 42
-32
V
V
bb (operation)
bb (reverse)
ON
38
44
mW
A
I
L(SCp)
I
35
A
L(SCr)
I
11
A
L(ISO)
2)
bb
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
5
5
5
·
1
1
Straight leads
SMD
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
â
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
+ V
R
bb
bb
3
5
Voltag
source
Gate
Overvoltag
protectio
Curren
limit
protectio
V Logic
OUT
Charge
Level
Limit for
unclampe
ind.
Voltag
sensor
Temperatur
sensor
Rectifie
IN
2
4
Open
Load
Logic
ESD
detectio
ST
Short
detectio
â
PROF
GND
1
Load GND
Signal GND
1)
2)
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Infineon Technologies AG
Page 1 of 14
1999-03-22
BTS 432 D2
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
V
Supply voltage (overvoltage protection see page 3)
Vbb
Vs3)
63
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 W, RL= 1.1 W, td= 200 ms, IN= low or high
66.5
V
Load current (Short-circuit current, see page 4)
Operating temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
°C
Storage temperature range
Tstg
Ptot
Power dissipation (DC)
125
W
Inductive load switch-off energy dissipation,
single pulse
T=150 °C: EAS
1.7
2.0
J
j
Electrostatic discharge capability (ESD)
(Human Body Model)
VESD
kV
Input voltage (DC)
VIN
-0.5 ... +6
±5.0
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
I
IN
mA
±5.0
IST
Thermal resistance
chip - case: RthJC
£ 1 K/W
£ 75
£ tbd
junction - ambient (free air): RthJA
SMD version, device on pcb4):
3)
4)
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70mm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 2
1999-Mar.-22
BTS 432 D2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
T=25 °C: RON
j
30
55
11
38
70
--
mW
T=150 °C:
j
Nominal load current (pin 3 to 5)
IL(ISO)
9
A
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
IL(GNDhigh)
--
--
1
mA
T =-40...+150°C
j
Turn-on time
Turn-off time
to 90% VOUT: ton
to 10% VOUT: toff
50
10
160
--
300
80
ms
RL = 12 W, T =-40...+150°C
j
Slew rate on
dV /dton
-dV/dtoff
0.4
1
--
--
2.5 V/ms
5 V/ms
10 to 30% VOUT, RL = 12 W, T =-40...+150°C
j
Slew rate off
70 to 40% VOUT, RL = 12 W, T =-40...+150°C
j
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(on)
4.5
2.4
--
--
--
42
4.5
4.5
7.5
V
V
V
V
j
T =-40...+150°C: Vbb(under)
j
T =-40...+150°C: Vbb(u rst)
j
--
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
--
6.5
T =-40...+150°C:
j
Undervoltage hysteresis
DVbb(under) = Vbb(u rst) - Vbb(under)
DVbb(under)
--
0.2
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
42
42
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: DVbb(over)
j
0.2
--
67
--
T =-40°C: Vbb(AZ)
j
T =25...+150°C:
j
60
63
--
Standby current (pin 3)
VIN=0, IST=0,
Tj=-40...+25°C: Ibb(off)
Tj=150°C:
--
--
12
18
25
60
mA
mA
IL(off)
--
6
--
Leakage output current (included in Ibb(off)
VIN=0
)
Operating current (Pin 1)7), VIN=5 V
IGND
--
1.1
-- mA
5)
6)
At supply voltage increase up to V = 6.5 V typ without charge pump, V
»V - 2 V
bb
bb
OUT
see also V
in table of protection functions and circuit diagram page 7. Meassured without load.
ON(CL)
Infineon Technologies AG
Page 3
1999-Mar.-22
BTS 432 D2
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
IL(SCp)
( max 400 ms if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
22
80
35
--
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC) Tj =-40..+150°C: td(SC)
,
400
ms
min value valid only, if input "low" time exceeds 30 ms
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
VON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
--
150
--
8.3
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
DTjt
EAS
10
--
--
--
1.7
1.3
1.0
J
Tj Start = 150 °C, single pulse
Vbb = 12 V: ELoad12
Vbb = 24 V: ELoad24
Reverse battery (pin 3 to 1) 10)
Integrated resistor in Vbb line
-Vbb
--
--
--
32
--
V
Rbb
120
W
Diagnostic Characteristics
Open load detection current
Tj=-40 °C: IL (OL)
Tj=25..150°C:
2
2
--
--
900
750
mA
(on-condition)
7)
8)
Add I , if I > 0, add I , if V >5.5 V
Short circuit current limit for max. duration of 400 ms, prior to shutdown (see t
ST
ST
IN
IN
page 4)
d(SC)
9)
While demagnetizing load inductance, dissipated energy in PROFET is E
=
AS
VON(CL) * iL(t) dt, approx.
VON(CL)
VON(CL) - Vbb
2
L
1
E
= / * L * I * (
AS
), see diagram page 8
2
10)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current I of » 0.3 A at V = -32 V through the logic heats up the device. Time allowed under these
GND
bb
condition is dependent on the size of the heatsink. Reverse I
can be reduced by an additional external
GND
GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
Infineon Technologies AG
Page 4
1999-Mar.-22
BTS 432 D2
Input and Status Feedback11)
Input turn-on threshold voltage
VIN(T+)
VIN(T-)
D VIN(T)
1.5
1.0
--
--
2.4
--
V
V
Tj =-40..+150°C:
Tj =-40..+150°C:
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
--
1
0.5
--
--
V
VIN = 0.4 V: I
30
mA
IN(off)
On state input current (pin 2)
VIN = 3.5 V: I
10
80
25
50
mA
ms
ms
IN(on)
Status invalid after positive input slope
td(ST SC)
200
400
(short circuit)
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
350
-- 1600
(open load)
T =-40 ... +150°C:
j
Status output (CMOS)
12)
T =-40...+150°C, IST= - 50 mA: VST(high)
4.4
--
5.1
--
6.5
0.4
V
j
T =-40...+150°C, IST = +1.6 mA: VST(low)
j
Max. status current for
valid status output,
current source (out): -IST
current sink (in) : +IST
--
-- 0.25 mA
13)
--
--
1.6
T =-40...+150°C
j
11)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
12)
13)
V
» V during undervoltage shutdown
St high
No current sink capability during undervoltage shutdown
bb
Infineon Technologies AG
Page 5
1999-Mar.-22
BTS 432 D2
Truth Table
Input-
level
Output
level
Status
432
D2
432
E2/F2
432
I2
H
H
H
H
Normal
operation
Open load
L
H
L
L
H
14
H
H
H
L
H
L
L
H
)
H
H
L
L
H
H
H
L
H
L
Short circuit
to GND
Short circuit
to V
bb
Overtem-
L
H
L
H
L
H
H
L
H
15)
15)
H (L
)
H
H (L
L
)
L
L
L
L
L
H
L
L
L
L
L
perature
Undervoltage
L
16)
16)
H
H
L
L
L
16)
16)
L
H
H
H
L
L
Overvoltage
L
H
L
L
L
L
L = "Low" Level
H = "High" Level
Terms
Status output
I
bb
V
Logic
3
I
IN
V
bb
IN
ST
2
I
V
L
ON
OUT
PROFET
I
5
ST
ESD-
ZD
ST
GND
4
V
GND
V
IN
ST
V
1
I
Zener diode: 6.1 V typ., max 5 mA, V
ESD zener diodes are not designed for continuous
current
5 V typ,
Logic
bb
V
GND
OUT
R
GND
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Input circuit (ESD protection)
+ V
bb
R
I
IN
ESD-
V
ON
ZD ZD
I1
I2
I
I
OUT
GND
Short circuit
detection
Logic
unit
ZD 6.1 V typ., ESD zener diodes are not designed for
I1
continuous current
14)
15)
16)
Power Transistor off, high impedance
Low resistance short V to output may be detected by no-load-detection
bb
No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 6
1999-Mar.-22
BTS 432 D2
Inductive and overvoltage output clamp
GND disconnect
+ V
bb
V
Z
3
V
V
bb
ON
IN
2
OUT
PROFET
5
OUT
ST
4
GND
GND
1
V
V
V
V
bb
IN
ST
V
clamped to 58 V typ.
GND
ON
Overvolt. and reverse batt. protection
Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
+ V
bb
GND disconnect with GND pull up
R
bb
V
Z
R
3
IN
IN
V
bb
IN
Logic
2
V
OUT
ST
OUT
R
PROFET
ST
5
GND
PROFET
ST
4
GND
1
R
GND
Signal GND
V
V
V
R
R
= 120 W typ., V +Rbb*40 mA = 67 V typ., add
, R , R for extended protection
V
ST
IN
bb
GND IN ST
Z
GND
bb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
V
disconnect with charged inductive
bb
high
load
+ V
bb
3
V
high
bb
IN
2
VON
OUT
PROFET
ON
5
ST
4
GND
1
OUT
Open load
detection
Logic
unit
V
bb
Infineon Technologies AG
Page 7
1999-Mar.-22
BTS 432 D2
Inductive Load switch-off energy
3
dissipation
E
bb
V
high
bb
IN
2
E
AS
OUT
PROFET
5
E
Load
V
ST
bb
4
IN
GND
1
OUT
PROFET
=
ST
E
L
V
bb
GND
E
R
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
L
1
E
< E , E = / * L * I
L L 2
Load
Infineon Technologies AG
Page 8
1999-Mar.-22
BTS 432 D2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
BTS 432D2 432E2 432F2 432I2
Logic version
D
E
F
I
Overtemperature protection
T >150 °C, latch function17 18
X
X
X
)
)
j
X
X
T >150 °C, with auto-restart on cooling
j
Short-circuit to GND protection
17)
switches off when V >8.3 V typ.
X
X
X
X
X
X
ON
(when first turned on after approx. 200 ms)
Open load detection
in OFF-state with sensing current 30 mA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Status feedback for
overtemperature
X
X
X
X
X
X
X
X
X
short circuit to GND
X
X
X
19)
19)
19)
short to V
open load
-
-
-
bb
X
X
X
X
-
X
-
undervoltage
overvoltage
-
-
Status output type
CMOS
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb
ON(CL)
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
medium level
X
low level (better protection of application)
17)
Latch except when V -V
< V
after shutdown. In most cases V
= 0 V after shutdown (V
bb OUT
ON(SC)
OUT OUT
¹ 0 V only if forced externally). So the device remains latched unless V < V
(see page 4). No latch
bb
ON(SC)
between turn on and t
.
d(SC)
18)
19)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
Low resistance short V to output may be detected by no-load-detection
bb
Infineon Technologies AG
Page 9
1999-Mar.-22
BTS 432 D2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
t
d(bb IN)
V
bb
td(ST)
ST
V
*)
V OUT
OUT
A
ST CMOS
I
L
IL(OL)
t
A
t
in case of too early V =high the device may not turn on (curve
IN
A)
*) if the time constant of load is too large, open-load-status may
occur
td(bb IN) approx. 150 ms
Figure 2a: Switching a lamp,
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
V
V
OUT
OUT
t
d(SC)
I
I
L
L
t
t
t
approx. 200ms if Vbb - VOUT > 8.3 V typ.
d(SC)
Infineon Technologies AG
Page 10
1999-Mar.-22
BTS 432 D2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature,
Reset if (IN=low) and (T <T )
j
jt
IN
IN
I L
ST
V
I
L(SCp)
I
L(SCr)
OUT
ST
T
J
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
*) ST goes high , when V =low and T <T
IN
j
jt
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, turn on/off
to open load
IN
IN
ST
t
d(ST)
ST
VOUT
V
OUT
I L
**)
I
L
open
t
t
**) current peak approx. 20 ms
Infineon Technologies AG
Page 11
1999-Mar.-22
BTS 432 D2
Figure 5b: Open load: detection in ON-state, open
Figure 6b: Undervoltage restart of charge pump
load occurs in on-state
V
[V]
ON
VON(CL)
Von
IN
off
t
t
d(OL ST2)
d(ST OL1)
ST
V
V bb(over)
off
OUT
V
Vbb(u rst)
V
bb(o rst)
normal
normal
I
open
bb(u cp)
L
V bb(under)
on
t
Vbb
[V]
V
bb
charge pump starts at Vbb(ucp) =6.5 V typ.
td(ST OL1) = tbd ms typ., td(ST OL2) = tbd ms typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
VON(CL)
V
V
V
bb(over)
bb(o rst)
bb
V
bb
V
bb(u cp)
V
bb(under)
V
bb(u rst)
VOUT
VOUT
ST
ST CMOS
t
t
Infineon Technologies AG
Page 12
1999-Mar.-22
BTS 432 D2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
Ordering code
TO-220AB/5, Option E3043 Ordering code
BTS 432 D2 E3043
Q67060-S6201-A4
BTS 432 D2
Q67060-S6201-A2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS432D2 E3062A T&R:
Q67060-S6201-A5
Infineon Technologies AG
Page 13
1999-Mar.-22
BTS 432 D2
Published by Infineon Technologies AG, Balanstraße 73, D-
81541 München
ã Infineon Technologies AG 2002. All Rights Reserved
Attention please!
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liability is only assumed for components, not for applications,
processes and circuits implemented within components or
assemblies. The information describes a type of component and
shall not be considered as warranted characteristics. Terms of
delivery and rights to change design reserved. For questions on
technology, delivery and prices please contact the Semiconductor
Group Offices in Germany or the Infineon Companies and
Representatives worldwide (see address list). Due to technical
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information on the types in question please contact your nearest
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Packing: Please use the recycling operators known to you. We
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Components used in life-support devices or systems must be
20)
expressly authorised for such purpose! Critical components
of the Infineon Technologies AG, may only be used in life
supporting devices or systems21) with the express written
approval of Infineon Technologies AG.
20)
A critical component is a component used in a life-support
device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
21)
Life support devices or systems are intended (a) to be
implanted in the human body or (b) support and/or maintain
and sustain and/or protect human life. If they fail, it is
reasonably to assume that the health of the user or other
persons may be endangered.
Infineon Technologies AG
Page 14
1999-Mar.-22
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