Q67060-S6202-A2 [INFINEON]
Smart Highside Power Switch; 海赛德智能电源开关
| 型号： | Q67060-S6202-A2 |
| 厂家： | 
Infineon |
| 描述： | Smart Highside Power Switch |
| 文件： | 总14页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 432 E2
Smart Highside Power Switch
Product Summary
Features
V
80
58
V
V
1
Load dump
•
•
•
•
•
•
•
•
•
•
•
•
)
Load dump and reverse battery protection
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
V -VOUT Avalanche Clamp
bb
V
V
4.5 ... 42
-32
V
V
bb (operation)
bb (reverse)
R
ON
38
mΩ
I
I
I
44
A
L(SCp)
L(SCr)
L(ISO)
35
A
11
A
Electrostatic discharge (ESD) protection
2)
Loss of ground and loss of V protection
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-
restart and hysteresis
bb
5
5
5
1
Application
1
SMD
Straight leads
Standard
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
•
•
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.
+ V
R
bb
bb
3
5
Voltage
source
Gate
protection
Overvoltage
protection
Current
limit
VLogic
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
Temperature
sensor
Rectifier
IN
2
4
Open load
detection
Load
Logic
ESD
ST
Short circuit
detection
PROFET
GND
1
Load GND
Signal GND
1)
2)
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Semiconductor Group
1 of 14
2003-Oct-01
BTS 432 E2
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
V
Supply voltage (overvoltage protection see page 3)
Vbb
Vs3)
63
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
66.5
V
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
Tstg
Ptot
°C
Power dissipation (DC)
125
W
Inductive load switch-off energy dissipation,
single pulse
T=150 °C: EAS
1.7
2.0
J
j
Electrostatic discharge capability (ESD)
(Human Body Model)
VESD
kV
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
±5.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
±5.0
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
≤ 1 K/W
≤ 75
≤ tbd
3)
4)
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Semiconductor Group
2
2003-Oct-01
BTS 432 E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
T=25 °C: RON
j
30
55
11
38
70
--
mΩ
A
T=150 °C:
j
Nominal load current (pin 3 to 5)
IL(ISO)
9
ISO Proposal: VON = 0.5 V, T = 85 °C
C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
IL(GNDhigh)
--
--
1
mA
T =-40...+150°C
j
Turn-on time
Turn-off time
to 90% VOUT: ton
to 10% VOUT: toff
50
10
160
--
300
80
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
dV /dton
-dV/dtoff
0.4
1
--
--
2.5 V/µs
5 V/µs
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(on)
4.5
2.4
--
--
--
42
4.5
4.5
7.5
V
V
V
V
j
T =-40...+150°C: Vbb(under)
j
T =-40...+150°C: Vbb(u rst)
j
--
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
--
6.5
T =-40...+150°C:
j
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
0.2
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
42
42
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
0.2
--
67
--
T =-40°C: Vbb(AZ)
60
63
--
j
T =25...+150°C:
j
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj=150°C:
--
--
12
18
25
60
µA
µA
IL(off)
--
6
--
Leakage output current (included in Ibb(off)
VIN=0
Operating current (Pin 1)7), VIN=5 V
)
IGND
--
1.1
--
mA
5)
At supply voltage increase up to V = 6.5 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
6)
7)
see also V
in table of protection functions and circuit diagram page 7. Meassured without load.
ON(CL)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Semiconductor Group
3
2003-Oct-01
BTS 432 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 400 µs if VON > VON(SC)
)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
22
80
35
--
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC) Tj =-40..+150°C: td(SC)
,
400
µs
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
VON(CL)
--
58
--
V
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
--
150
--
8.3
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation10),
∆Tjt
10
--
--
EAS
--
1.7
1.3
1.0
J
Tj Start = 150 °C, single pulse
Vbb = 12 V: ELoad12
Vbb = 24 V: ELoad24
Reverse battery (pin 3 to 1) 11)
Integrated resistor in Vbb line
-Vbb
--
--
--
32
--
V
Rbb
120
Ω
Diagnostic Characteristics
Open load detection current
Tj=-40 °C: IL (OL)
Tj=25..150°C:
2
2
--
--
900
750
mA
(on-condition)
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t
page 4)
d(SC)
10)
While demagnetizing load inductance, dissipated energy in PROFET is E = VON(CL) * iL(t) dt, approx.
AS
VON(CL)
VON(CL) - Vbb
2
L
1
E
AS
= / * L * I * (
), see diagram page 8
2
11)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I of ≈ 0.3 A at V = -32 V through the logic heats up the device. Time allowed under
GND
bb
these condition is dependent on the size of the heatsink. Reverse I
can be reduced by an additional
GND
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group
4
2003-Oct-01
BTS 432 E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Input and Status Feedback12)
Input turn-on threshold voltage
VIN(T+)
1.5
1.0
--
--
2.4
--
V
V
Tj =-40..+150°C:
Input turn-off threshold voltage
VIN(T-)
Tj =-40..+150°C:
Input threshold hysteresis
∆ VIN(T)
--
1
0.5
--
--
V
Off state input current (pin 2)
VIN = 0.4 V: IIN(off)
VIN = 3.5 V: IIN(on)
td(ST SC)
30
µA
On state input current (pin 2)
10
80
25
50
µA
µs
µs
Status invalid after positive input slope
(short circuit)
200
400
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
350
-- 1600
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)
5.4
--
6.1
--
--
0.4
V
j
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
j
12)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group
5
2003-Oct-01
BTS 432 E2
Truth Table
Input-
level
Output Status
level
432
D2
432
E2/F2
432
I2
Normal
operation
Open load
L
H
L
L
H
H
H
H
L
H
H
H
L
H
H
L
13
)
H
H
H
L
L
H
H
Short circuit
to GND
Short circuit
L
H
L
H
L
H
H
L
H
H
L
L
14)
14)
to V
bb
H
H (L
)
H
H (L
)
Overtem-
perature
Under-
L
H
L
L
L
L
L
L
L
L
L
H
H
L
L
15)
15)
L
L
L
15)
15)
voltage
H
L
Overvoltage
L
H
L
L
L
L
H
H
L
L
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
I
bb
R
I
3
IN
I
IN
V
bb
IN
ESD-
2
I
V
L
ON
ZD ZD
I1
I2
I
OUT
PROFET
I
I
5
ST
ST
GND
4
V
GND
V
ST
IN
V
1
I
bb
V
GND
OUT
ZD 6.1 V typ., ESD zener diodes are not designed for
I1
R
GND
continuous current
13)
Power Transistor off, high impedance
14)
15)
Low resistance short V to output may be detected by no-load-detection
No current sink capability during undervoltage shutdown
bb
Semiconductor Group
6
2003-Oct-01
BTS 432 E2
Overvolt. and reverse batt. protection
Status output
+ V
bb
+5V
R
bb
V
Z
RST(ON)
R
IN
ST
IN
Logic
V
OUT
ESD-
ZD
ST
R
ST
GND
GND
PROFET
ESD-Zener diode: 6.1 V typ., max 5 mA;
< 250 Ω at 1.6 mA, ESD zener diodes are not
designed for continuous current
R
GND
R
ST(ON)
Signal GND
R
R
= 120 Ω typ., V +Rbb*40 mA = 67 V typ., add
Z
, R , R for extended protection
bb
GND IN ST
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V
bb
+ V
bb
V
ON
OUT
V
Short circuit
detection
ON
Logic
unit
ON
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
ON
GND disconnect
OUT
3
GND
V
bb
IN
2
V
ON
clamped to 58 V typ.
OUT
PROFET
5
ST
4
GND
1
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
.
Due to VGND >0, no VST = low signal available.
Semiconductor Group
7
2003-Oct-01
BTS 432 E2
GND disconnect with GND pull up
3
V
high
bb
IN
3
2
V
bb
IN
OUT
PROFET
5
2
ST
OUT
4
PROFET
5
GND
1
ST
4
GND
1
V
bb
V
V
V
V
IN ST
GND
bb
Inductive Load switch-off energy
dissipation
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
E
bb
E
AS
V
disconnect with charged inductive
bb
load
E
E
Load
L
V
bb
IN
3
OUT
PROFET
V
high
bb
IN
=
ST
2
GND
OUT
PROFET
5
ST
E
R
4
GND
1
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
V
1
E
Load
< E , E = / * L * I
L L 2
L
bb
Semiconductor Group
8
2003-Oct-01
BTS 432 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
BTS 432D2 432E2 432F2 432I2
Logic version
D
E
F
I
Overtemperature protection
T >150 °C, latch function16 17
X
X
X
)
)
j
X
X
T >150 °C, with auto-restart on cooling
j
Short-circuit to GND protection
16)
switches off when V >8.3 V typ.
X
X
X
X
X
X
ON
(when first turned on after approx. 200 µs)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Status feedback for
overtemperature
X
X
X
X
X
X
X
X
X
short circuit to GND
X
18)
X
18)
X
18)
short to V
bb
-
-
-
open load
X
X
X
X
-
X
-
undervoltage
overvoltage
Status output type
CMOS
-
-
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
medium level
X
low level (better protection of application)
16)
Latch except when V -V
< V
after shutdown. In most cases V
= 0 V after shutdown (V
≠
bb
OUT
ON(SC)
OUT
OUT
0 V only if forced externally). So the device remains latched unless V < V
(see page 4). No latch
bb
ON(SC)
between turn on and t
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
Low resistance short V to output may be detected by no-load-detection
.
d(SC)
17)
18)
bb
Semiconductor Group
9
2003-Oct-01
BTS 432 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
t
d(ST)
t
d(bb IN)
V
ST
bb
*)
VOUT
VOUT
A
IL
ST open drain
IL(OL)
t
t
A
*) if the time constant of load is too large, open-load-status may
occur
in case of too early V =high the device may not turn on (curve A)
IN
t
d(bb IN) approx. 150 µs
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
VOUT
V
OUT
t
d(SC)
IL
IL
t
t
t
approx. 200µs if Vbb - VOUT > 8.3 V typ.
d(SC)
Semiconductor Group
10
2003-Oct-01
BTS 432 E2
Figure 4a: Overtemperature:
Reset if T <T
j
jt
Figure 3b: Turn on into overload,
IN
IN
ST
I L
I
L(SCp)
I
V
L(SCr)
OUT
T
J
ST
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
t
d(ST)
ST
ST
V
OUT
V OUT
IL
open
I L
t
**)
t
**) current peak approx. 20 µs
Semiconductor Group
11
2003-Oct-01
BTS 432 E2
Figure 6b: Undervoltage restart of charge pump
[V]
V
ON
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
VON(CL)
Von
off
IN
t
t
d(OL ST2)
d(ST OL1)
ST
V
V
bb(over)
off
OUT
V bb(o rst)
Vbb(u rst)
Vbb(u cp)
on
normal
normal
IL
open
V
bb(under)
Vbb
[V]
t
V
bb
charge pump starts at Vbb(ucp) =6.5 V typ.
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
VON(CL)
V
V
V
bb(over)
bb(o rst)
bb
V
bb
V
V
bb(u cp)
bb(under)
V
bb(u rst)
VOUT
VOUT
ST
ST open drain
t
t
Semiconductor Group
12
2003-Oct-01
BTS 432 E2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
Ordering code
TO-220AB/5, Option E3043 Ordering code
BTS 432 E2 E3043
Q67060-S6202-A4
BTS 432 E2
Q67060-S6202-A2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS432E2 E3062A T&R:
Q67060-S6202-A6
Semiconductor Group
13
2003-Oct-01
BTS 432 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Semiconductor Group
14
2003-Oct-01
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