PTFB182503FL [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz; 热增强型高功率射频LDMOS FET的240 W， 1805-1880
| 型号： | PTFB182503FL |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz |
| 文件： | 总12页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503EL
H-33288-6
PTFB182503FL
H-34288-4/2
Features
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
•
•
•
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
10 MHz carrier spacing
Typical two-carrier WCDMA performance,
1880 MHz, 30 V
-30
-35
-40
-45
-50
-55
35
30
25
20
15
10
5
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
Efficiency
- Intermodulation distortion = –35 dBc
•
Typical CW performance, 1880 MHz, 30 V
IM3
- Output power at P
- Efficiency = 55%
= 240 W
1dB
ACPR
46
•
•
•
•
Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
Integrated ESD protection. Human Body Model,
Class 2 (minimum)
38
40
42
44
48
50
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Average Output Power (dBm)
Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 30 V, I = 1.85 A, P = 50 W average
V
DD
DQ
OUT
ƒ = 1840 MHz, ƒ = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
1
2
Characteristic
Gain
Symbol
Min
18
Typ
19
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
27
28
—
%
Intermodulation Distortion
All published data at T
IMD
—
–35
–31
dBc
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V
= 30 V, I
= 1.85 A, P = 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
OUT
DD
DQ
Characteristic
Gain
Symbol
Min
—
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
40
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
= 28 V, V
= 63 V, V
= 0 V
= 0 V
I
I
—
1.0
10.0
—
µA
µA
W
GS
GS
DSS
DSS
—
—
= 10 V, V = 0.1 V
R
—
0.03
2.8
—
DS
DS(on)
Operating Gate Voltage
Gate Leakage Current
= 30 V, I
= 1.85 A
V
2.3
—
3.3
1.0
V
DQ
GS
= 10 V, V = 0 V
I
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
–6 to +10
200
V
GS
T
°C
J
T
–40 to +150
0.262
°C
STG
Thermal Resistance (T
= 70°C, 50 W WCDMA)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Package Outline Package Description
Shipping
PTFB182503EL V1
H-33288-6
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Tray
PTFB182503EL V1 R250 H-33288-6
PTFB182503FL V2 H-34288-4/2
Tape & Reel, 250 pcs
Tray
PTFB182503FL V2 R250 H-34288-4/2
Tape & Reel, 250 pcs
Data Sheet
2 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-Carrier WCDMA at Various Biases
VDD = 30 V, ƒ = 1842 MHz, 3GPP WCDMA
signal, PAR = 7.5 dB, 5 MHz carrier spacing
Six-Carrier GSM vs Power Out
VDD = 30V, IDQ =1.85 A ƒ = 1842 MHz,
PAR = 7.1 dB
-5
-10
-15
-20
-25
-30
-35
-40
-45
45
40
35
30
25
20
15
10
5
-30
IM3 Up
IDQ = 1.65 A
-35
IM3 Low
Efficiency
Efficiency
IDQ = 1.45 A
IDQ = 2.25 A
-40
-45
-50
IDQ = 2.05 A
IDQ = 1.85 A
-55
38
40
42
44
46
48
50
37
39
41
43
45
47
49
51
Average Output Power (dBm)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz
Power Sweep
VDD = 30 V, ƒ = 1842 MHz
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
20.0
19.5
19.0
18.5
18.0
17.5
17.0
Gain
1.45 A
1.65 A
1.85 A
2.05 A
2.25 A
Efficiency
35
40
45
50
55
36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1850 mA, ƒ = 1842 MHz
Voltage Sweep
IDQ = 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
19
65
55
45
35
25
15
-10
-20
-30
-40
-50
50
40
30
20
10
Gain
18
Efficiency
17
Efficiency
16
IM3 Up
Gain
15
TCASE = 25°C
TCASE = 90°C
14
23
25
27
29
31
33
0
40
80
120
160
200
240
Supply Voltage (V)
Output Power (W)
Broadband Circuit Impedance
Z = 50 W
0
D
Z Source
Z Load
G
S
Z Load
1920 MHz
Z Source
Frequency
MHz
Z Source W
Z Load W
R
jX
R
jX
1780
2.99
2.95
2.89
2.84
2.80
2.78
2.74
2.72
–2.48
–2.30
–2.13
–1.96
–1.76
–1.58
–1.39
–1.21
1.33
1.33
1.31
1.29
1.29
1.28
1.29
1.29
–0.49
–0.38
–0.27
–0.16
–0.02
0.10
1780 MHz
1800
1820
1840
1860
1880
1900
0.23
1920
0.36
Data Sheet
4 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Reference Circuit
C803
1000 pF
S2
8
4
1
In
Out
NC
NC
2
C802
5
7
3
6
1000 pF
R801
100 Ohm
R803
10 Ohm
C801
1000 pF
R805
1200 Ohm
S3
3
2
3
C
S1
1
4
S
B
E
R802
10 Ohm
R804
1300 Ohm
TL110
TL112
TL127
R101
10 Ohm
TL122
TL118
TL121
C105
TL108
TL106
2
1
3
1
2
3
TL115
TL113
TL128
C107
8.2 pF
2200000 pF
2
1
3
TL114
C103
10000000 pF
2
1
3
TL135
C101
10 pF
TL103
TL126
TL102
TL119
TL104 2
TL129
TL124
TL101 TL109
GATE DUT
(Pin G)
1
3
RF_IN
4
TL111
TL136
C104
10000000 pF
2
1
3
TL125
C106
2200000 pF
2
1
C102
8.2 pF
3
TL134
TL116
TL133
TL132
R102
10 Ohm
e
r=3.48
TL120
TL105
TL117
TL107
TL123
2
1
3
H=30 mil
3
2
1
b
1
9
2
5
0
3
e
f
l
_
b
d
i
n
_
0
8
-
2
3
-
2
0
1
0
RO/RO4350B1
TL131
TL130
Reference circuit input schematic for ƒ = 1880 MHz
C202
10000000 pF
C206
C210
2200000 pF
C208
1000000 pF
100000 pF
TL220
TL215
TL212
TL203
TL202
TL216
2
1
3
3
3
3
2
1
2
1
2
1
1
2
TL209
TL207
3
VDD
C204
10000000 pF
DUT
(Pin V)
C213
1.1 pF
TL226
TL225
TL232
TL227
TL228
TL236
TL224
C207
10 pF
TL221
TL230 TL229
TL205 TL234
TL222
2
TL211
TL231
TL210
TL223
TL235
TL204
DRAIN DUT
(Pin D)
3
1
RF_OUT
4
C212
1.1 pF
TL233
C205
10000000 pF
TL206
DUT
(Pin V)
TL201
TL213
1 2
TL214
TL217
TL219
TL218
2
1
er=3.48
3
3
1
2
1
2
2
1
b
1 9 2 5 0 3 e f l _ b d o u t _ 0 8 - 2 3 - 2 0 1 0
TL208
H=30 mil
3
3
3
RO/RO4350B1
C203
10000000 pF
C201
100000 pF
VDD
C209
1000000 pF
C211
2200000 pF
Reference circuit output schematic for ƒ = 1880 MHz
Data Sheet
5 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT
PTFB182503EL or PTFB182503FL
PCB
0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 1880 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Input
TL101, TL117
TL102
0.022 λ, 78.27 W
0.035 λ, 51.58 W
0.050 λ, 9.67 W
0.031 λ, 51.58 W
W = 0.762, L = 2.159
W = 1.651, L = 3.358
W = 13.970, L = 4.445
W = 1.651, L = 3.018
W = 30, L = 85
W = 65, L = 132
W = 550, L = 175
W = 65, L = 119
TL103
TL104
TL105
W1 = 13.970, W2 = 0.762, W3 = 13.970,
W4 = 0.762
W1 = 550, W2 = 30, W3 = 550
W4 = 30
TL106, TL107
TL108, TL136
W = 0.762
W = 30
0.010 λ, 68.02 W
W1 = 1.016, W2 = 1.016, W3 = 1.016
W1 = 0.762, W2 = 0.762, W3 = 1.016
W1 = 40, W2 = 40, W3 = 40
W1 = 30, W2 = 30, W3 = 40
TL109, TL110, TL132, 0.010 λ, 78.27 W
TL139
TL111
W1 = 1.651, W2 = 2.032
W = 2.540, L = 1.321
W1 = 65, W2 = 80
W = 100, L = 52
W = 30, L = 79
TL112, TL134
TL113
0.014 λ, 38.82 W
0.020 λ, 78.27 W
0.099 λ, 92.53 W
0.016 λ, 68.02 W
0.017 λ, 78.27 W
0.001 λ, 68.02 W
0.013 λ, 78.27 W
0.022 λ, 9.67 W
0.007 λ, 68.02 W
0.118 λ, 78.27 W
0.008 λ, 45.17 W
0.000 λ, 45.17 W
0.023 λ, 9.67 W
0.000 λ, 9.67 W
0.028 λ, 9.67 W / 51.58 W
0.050 λ, 9.67 W
0.015 λ, 68.02 W
0.010 λ, 78.27 W
W = 0.762, L = 2.007
TL114
W = 0.508, L = 9.957
W = 20, L = 392
W = 40, L = 60
TL115
W = 1.016, L = 1.524
TL116, TL137
TL118, TL119
TL120, TL121
TL122
W = 0.762, L = 1.727
W = 30, L = 68
W = 1.016, L = 0.127
W = 40, L = 5
W = 0.762, L = 1.270
W = 30, L = 50
W = 13.970, L = 1.981
W = 1.016, L = 0.686
W = 550, L = 78
W = 40, L = 27
TL123, TL124
TL125, TL126
TL127
W = 0.762, L = 11.684
W = 2.032, L = 0.762
W = 30, L = 460
W = 80, L = 30
TL128
W = 2.032, L = 0.025
W = 80, L = 1
TL129
W1 = 13.970, W2 = 13.970, W3 = 2.032
W = 13.970, L = 0.025
W1 = 13.970, W2 = 1.651, L = 2.515
W = 13.970, L = 4.470
W = 1.016, L = 1.514
W1 = 550, W2 = 550, W3 = 80
W = 550, L = 1
TL130
TL131 (taper)
TL133
W1 = 550, W2 = 65, L = 99
W = 550, L = 176
W = 40, L = 60
TL135
TL138
W = 0.762, L = 0.991
W = 30, L = 39
table continued on page 7
Data Sheet
6 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1880 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Output
TL201, TL219, TL220,
TL222
W = 0.002, ANG = 90.000, R = 0.002
W = 2, ANG = 3543307, R = 70
TL202
W1 = 1.651, W2 = 2.032
W = 1.651, L = 1.118
W1 = 65, W2 = 80
W = 65, L = 44
TL203
0.012 λ, 51.58 W
0.084 λ, 6.86 W
TL204
W = 20.320, L = 7.366
W = 800, L = 290
TL205
0.011 λ, 45.17 W
0.028 λ, 23.60 W
0.028 λ, 23.79 W
0.018 λ, 6.86 W / 8.31 W
0.076 λ, 34.08 W
W = 2.032, L = 1.016
W = 80, L = 40
TL206
W = 4.928, L = 2.540
W = 194, L = 100
TL207
W = 4.877, L = 2.540
W = 192, L = 100
TL208 (taper)
TL209, TL210
W1 = 20.320, W2 = 16.510, L = 1.575
W = 3.048, L = 7.112
W1 = 800, W2 = 650, L = 62
W = 120, L = 280
TL211, TL216, TL224, 0.032 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
TL225
TL212, TL228, TL217, 0.024 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 = 90
TL218, TL227
TL213
0.008 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 0.762
W = 3.048, L = 4.826
W1 = 120, W2 = 120, W3 = 30
W = 120, L = 190
TL214, TL215
TL221, TL242
TL223 (taper)
TL226
0.051 λ, 34.08 W
0.013 λ, 51.58 W
W = 1.651, L = 1.270
W = 65, L = 50
0.018 λ, 19.45 W / 51.58 W
W1 = 6.248, W2 = 1.651, L = 1.651
W1 = 12.700, W2 = 17.780
W = 6.248, L = 0.025
W1 = 246, W2 = 65, L = 65
W1 = 500, W2 = 700
W = 246, L = 1
TL229, TL230
TL231 (taper)
TL232
0.000 λ, 19.45 W
0.038 λ, 8.31 W / 19.45 W
W1 = 16.510, W2 = 6.248, L = 3.378
W1 = 650, W2 = 246, L = 133
W1 = 6.248, W2 = 0.025 , W3 = 6.248,
W4 = 0.025
W1 = 246, W2 = 1, W3 = 246,
W4 = 1
TL233, TL234, TL237, 0.000 λ, 146.88 W
W = 0.025, L = 0.025
W = 1, L = 1
TL238
TL235
0.005 λ, 51.58 W
0.000 λ, 8.31 W
W = 1.651, L = 0.508
W = 65, L = 20
TL236
TL239
W = 16.510, L = 0.025
W = 650, L = 1
W1 = 20.320, W2 = 0.025, W3 = 20.320
W4 = 0.025
W1 = 800, W2 = 1, W3 = 800,
W4 = 1
TL240, TL241
0.000 λ, 6.86 W
W = 20.320, L = 0.025
W = 800, L = 1
Data Sheet
7 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No.
LTN/PTFB182503EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .030
(60)
RO4350, .030
(60)
VDD
C803 C802
R803
R801
R802
S1
C210
C215 C203
R805
R804
S2
C207
VDD
S3
C801
10 µF
C202
R101
C102
C206
C105
C211
C212
RF_OUT
C101
C103
RF_IN
C214
C104
C205
C106
F µ 0 1 C204
R102
VDD
C208
C213 C201
C209
PTFB182503_IN_02
PTFB182503_OUT_02
b
1 8 2 5 0 3 e f l _ C D _ 0 8 - 1 7 - 2 0 1 0
Reference circuit assembly diagram (not to scale)
Data Sheet
8 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component
Description
Suggested Manufacturer
P/N
Input
C101
Chip capacitor, 7.5 pF
Chip capacitor, 4.71 µF
Chip capacitor, 0.3 pF
Chip capacitor, 10 pF
Capacitor, 1000 pF
Resistor, 10 W
ATC
ATC100B7R5BW500XB
493-2372-2-ND
C102, C103
ATC
C104
ATC
ATC100A0R3BW150XB
ATC100A100FW150XB
PCC1772CT-ND
P10ECT-ND
C105, C106
ATC
C801, C802, C803
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
R101, R102, R804, R805
R801
R802
R803
S1
Resistor, 1300 W
Resistor, 1200 W
Resistor, 100 W
P1.3KGCT-ND
P1.2KGCT-ND
P100ECT-ND
Potentiometer, 2k W
Transistor
3224W-202ECT-ND
BCP5616TA-ND
LM78L05ACM-ND
S2
S3
Voltage Regulator
Output
C201, C203
C202, C204
C205, C206
C207, C208
C209, C210
C211, C212
C213, C215
C214
Chip capacitor, 0.1 μF
Capacitor, 10 µF
Digi-Key
Garrett Electronics
ATC
445-1411-2-ND
281M5002106K
Chip capacitor, 0.6 pF
Chip capacitor, 10 μF
Chip capacitor, 0.1 μF
Chip capacitor, 0.9 pF
Chip capacitor, 2.2 μF
Chip capacitor, 10 pF
ATC100B0R6BW500XB
587-1818-2-ND
Digi-Key
Digi-Key
ATC
399-1267-2-ND
ATC100B0R9BW500XB
445-1447-2-ND
Digi-Key
ATC
ATC100B100FW500XB
Data Sheet
9 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-6
2X 5.080
45° X 2.032
[45° X .080]
[.200] (2 PLS)
4X 1.143
[.045] (4 PLS)
4X 30°
4X R1.524
[R.060]
4.889±.510
[.192±.020]
V
D
V
S
9.779
[.385]
9.398
[.370]
C
L
19.558±.510
[.770±.020]
2X R1.626
[R.064]
G
E
F
H
3- 3288 - 6_ po _02 -18 - 2010
C
L
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
+.254
4.039
–.127
22.352±.200
[.880±.008]
+.010
–.005
[
]
.159
1.575
[.062] (SPH)
C
L
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = V , E, F = N.C.
DD
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet
10 of 12
Rev. 06, 2010-11-09
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
V
D
G
4.889±.510
[.192±.020]
9.779
[.385]
9.398
[.370]
C
L
19.558±.510
[.770±.020]
+.381
4X R0.508
-.127
+.015
R.020
[
-.005
]
2X 12.700
[.500]
+.254
4.039
-.127
22.352±.200
[.880±.008]
+.010
.159
[
]
-.005
C
66065-A0003- C743- 01-0027 H- 34288- 4_2 .dwg
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = V
.
DD
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
11 of 12
Rev. 06, 2010-11-09
PTFB182503EL V1 / PTFB182503FL V2
Confidential, Limited Internal Distribution
Revision History:
2010-11-09
Data Sheet
Previous Version:
2010-10-07, Data Sheet
Page
1, 2, 10
1
Subjects (major changes since last revision)
Changed eared flange package type
Updated VSWR specification to 10:1
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Edition 2010-11-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
12 of 12
Rev. 06, 2010-11-09
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