PTFB182503FLV2R0 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs;
| 型号： | PTFB182503FLV2R0 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FETs |
| 文件： | 总12页 (文件大小：694K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB182503EL
PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
PTFB182503EL
H-33288-6
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503FL
H-34288-4/2
Features
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
•ꢀ Broadbandꢀinternalꢀinputꢀandꢀoutputꢀmatching
•ꢀ EnhancedꢀforꢀuseꢀinꢀDPDꢀerrorꢀcorrectionꢀsystemsꢀ
10 MHz carrier spacing
•ꢀ Typicalꢀtwo-carrierꢀWCDMAꢀperformance,ꢀ
1880 MHz, 30 V
-30
-35
-40
-45
-50
-55
35
30
25
20
15
10
5
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
Efficiency
- Intermodulation distortion = –35 dBc
•ꢀ TypicalꢀCWꢀperformance,ꢀ1880ꢀMHz,ꢀ30ꢀVꢀ
IM3
- Output power at P
- Efficiency = 55%
= 240 W
1dB
ACPR
46
•ꢀ Increasedꢀnegativeꢀgate-sourceꢀvoltageꢀrangeꢀforꢀ
improved performance in Doherty peaking amplifiers
•ꢀ IntegratedꢀESDꢀprotection.ꢀHumanꢀBodyꢀModel,ꢀ
Class 2 (minimum)
38
40
42
44
48
50
•ꢀ Capableꢀofꢀhandlingꢀ10:1ꢀVSWRꢀ@ꢀ30ꢀV,ꢀ240ꢀWꢀ
Average Output Power (dBm)
(CW) output power
•ꢀ Pb-free,ꢀRoHSꢀcompliantꢀ
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 30 V, I = 1.85 A, P = 50 W average
V
DD
DQ
OUT
ƒ = 1840 MHz, ƒ = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
1
2
Characteristic
Gain
Symbol
Min
18
Typ
19
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
27
28
—
%
Intermodulation Distortion
All published data at T
IMD
—
–35
–31
dBc
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
= 1.85 A, P = 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
—
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
40
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1.0
10.0
—
µA
µA
W
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
GS
V
GS
= 10 V, V = 0.1 V
R
DS(on)
—
0.03
2.8
—
DS
Operating Gate Voltage
Gate Leakage Current
V
= 30 V, I
= 1.85 A
V
GS
2.3
—
3.3
1.0
V
DS
DQ
V
GS
= 10 V, V = 0 V
I
GSS
µA
DS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
24 to 30
200
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–40 to +150
0.262
°C
Thermal Resistance (T
= 70°C, 50 W WCDMA)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package Description
H-33288-6, slotted flange
H-33288-6, slotted flange
H-34288-4/2, earless flange
H-34288-4/2, earless flange
Shipping
PTFB182503EL V1 R0
PTFB182503EL V1 R250
PTFB182503FL V2 R0
PTFB182503FL V2 R250
PTFB182503ELV1R0XTMA1
PTFB182503ELV1R250XTMA1
PTFB182503FLV2R0XTMA1
PTFB182503FLV2R250XTMA1
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Typical Performance (data taken in a production test fixture)
Two-Carrier WCDMA at Various Biases
VDD = 30 V, ƒ = 1842 MHz, 3GPP WCDMA
signal, PAR = 7.5 dB, 5 MHz carrier spacing
Six-Carrier GSM vs Power Out
VDD = 30V, IDQ =1.85 A ƒ = 1842 MHz,
PAR = 7.1 dB
-5
-10
-15
-20
-25
-30
-35
-40
-45
45
40
35
30
25
20
15
10
5
-30
IM3 Up
IDQ = 1.65 A
-35
IM3 Low
Efficiency
Efficiency
IDQ = 1.45 A
IDQ = 2.25 A
-40
-45
-50
IDQ = 2.05 A
IDQ = 1.85 A
-55
38
40
42
44
46
48
50
37
39
41
43
45
47
49
51
Average Output Power (dBm)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz
Power Sweep
VDD = 30 V, ƒ = 1842 MHz
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
20.0
19.5
19.0
18.5
18.0
17.5
17.0
Gain
1.45 A
1.65 A
1.85 A
2.05 A
2.25 A
Efficiency
35
40
45
50
55
36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1850 mA, ƒ = 1842 MHz
Voltage Sweep
IDQ = 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
19
18
17
16
15
14
65
55
45
35
25
15
-10
-20
-30
-40
-50
50
40
30
20
10
Gain
Efficiency
Efficiency
IM3 Up
Gain
TCASE = 25°C
TCASE = 90°C
23
25
27
29
31
33
0
40
80
120
160
200
240
Supply Voltage (V)
Output Power (W)
Broadband Circuit Impedance
Z = 50 W
0
D
Z Source
Z Load
G
S
Z Load
1920 MHz
Z Source
Frequency
MHz
Z Source W
Z Load W
R
jX
R
jX
1780
2.99
2.95
2.89
2.84
2.80
2.78
2.74
2.72
–2.48
–2.30
–2.13
–1.96
–1.76
–1.58
–1.39
–1.21
1.33
1.33
1.31
1.29
1.29
1.28
1.29
1.29
–0.49
–0.38
–0.27
–0.16
–0.02
0.10
1780 MHz
1800
1820
1840
1860
1880
1900
0.23
1920
0.36
Data Sheet
4 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Reference Circuit
C803
1000 pF
S3
8
4
1
In
Out
NC
2
NC
5
7
3
6
C802
1000 pF
R803
100 Ohm
R805
10 Ohm
C801
1000 pF
R802
1200 Ohm
S1
3
2
C
1
4
S
B
S2
3
E
R804
10 Ohm
R801
1300 Ohm
TL112
TL115
R101
10 Ohm
TL121
TL125
TL124
TL110
TL107
2
1
3
1
2
TL108
TL116
TL132
TL113
3
TL118
C102
4710000 pF
C105
10 pF
2
1
TL117
3
C101
7.5 pF
TL130
TL104
TL131
TL129
TL103
TL105
2
TL133
TL122
TL111
TL127
TL102
GATE DUT
(Pin G)
1
3
1
2
RF_IN
3
4
TL128
C104
0.3 pF
TL114
C103
4710000 pF
2
1
3
TL139
C106
10 pF
TL138
TL137
TL101
TL106
TL119
e
r = 3.48
H = 30 mil
R102
10 Ohm
TL123
TL120
TL109
TL126
2
1
3
3
2
1
TL136
b 1 8 2 5 0 3 e f l _ b d i n _ 0 8 - 1 7 - 2 0 1 0
RO/RO4350B1
TL135
TL134
Reference circuit input schematic for ƒ = 1880 MHz
C210
100000 pF
C203
1000000 pF
C215
2200000 pF
C207
10000000 pF
TL211
TL217
TL210
C202
TL214
TL228
TL218
2
1
3
3
3
3
2
1
2
1
2
1
1
2
TL225
TL207
3
VDD
10000000 pF
DUT
(Pin V)
C206
0.6 pF
TL220
TL221
TL219
C211
0.9 pF
TL237
TL233
TL242
TL201
C214
10 pF
TL231
TL230
TL229 TL223
TL204
TL239
TL236
TL232
TL235
TL226
2
TL208
2
TL205
TL241
TL240
TL202 TL222
TL203
DRAIN DUT
(Pin D)
1
3
1
3
RF_OUT
4
4
TL234
C205
0.6 pF
TL238
C212
0.9 pF
TL206
C208
DUT
(Pin V)
C204
10000000 pF
e
r = 3.48
H = 30 mil
TL227
TL212
1 2
TL213
TL209
TL216
TL215
2
1
3
3
1
2
1
2
2
1
b
1
8
2
5
0
3
e
f
l
_
b
d
o
u
t
_
0
8
-
1
7
-
2
0
1
0
TL224
3
3
3
RO/RO4350B1
VDD
C209
100000 pF
C201
C213
2200000 pF
10000000 pF
1000000 pF
Reference circuit output schematic for ƒ = 1880 MHz
Data Sheet
5 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Reference Circuit (cont.)
Description
DUT
PTFB182503EL or PTFB182503FL
0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
PCB
Electrical Characteristics at 1880 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Input
TL101, TL117
TL102
0.022 λ, 78.27 W
0.035 λ, 51.58 W
0.050 λ, 9.67 W
0.031 λ, 51.58 W
W = 0.762, L = 2.159
W = 1.651, L = 3.358
W = 13.970, L = 4.445
W = 1.651, L = 3.018
W = 30, L = 85
W = 65, L = 132
W = 550, L = 175
W = 65, L = 119
TL103
TL104
TL105
W1 = 13.970, W2 = 0.762, W3 = 13.970,
W4 = 0.762
W1 = 550, W2 = 30, W3 = 550
W4 = 30
TL106, TL107
TL108, TL136
W = 0.762
W = 30
0.010 λ, 68.02 W
W1 = 1.016, W2 = 1.016, W3 = 1.016
W1 = 0.762, W2 = 0.762, W3 = 1.016
W1 = 40, W2 = 40, W3 = 40
W1 = 30, W2 = 30, W3 = 40
TL109, TL110, TL132, 0.010 λ, 78.27 W
TL139
TL111
W1 = 1.651, W2 = 2.032
W = 2.540, L = 1.321
W1 = 65, W2 = 80
W = 100, L = 52
W = 30, L = 79
TL112, TL134
TL113
0.014 λ, 38.82 W
0.020 λ, 78.27 W
0.099 λ, 92.53 W
0.016 λ, 68.02 W
0.017 λ, 78.27 W
0.001 λ, 68.02 W
0.013 λ, 78.27 W
0.022 λ, 9.67 W
0.007 λ, 68.02 W
0.118 λ, 78.27 W
0.008 λ, 45.17 W
0.000 λ, 45.17 W
0.023 λ, 9.67 W
0.000 λ, 9.67 W
0.028 λ, 9.67 W / 51.58 W
0.050 λ, 9.67 W
0.015 λ, 68.02 W
0.010 λ, 78.27 W
W = 0.762, L = 2.007
TL114
W = 0.508, L = 9.957
W = 20, L = 392
W = 40, L = 60
TL115
W = 1.016, L = 1.524
TL116, TL137
TL118, TL119
TL120, TL121
TL122
W = 0.762, L = 1.727
W = 30, L = 68
W = 1.016, L = 0.127
W = 40, L = 5
W = 0.762, L = 1.270
W = 30, L = 50
W = 13.970, L = 1.981
W = 1.016, L = 0.686
W = 550, L = 78
W = 40, L = 27
TL123, TL124
TL125, TL126
TL127
W = 0.762, L = 11.684
W = 2.032, L = 0.762
W = 30, L = 460
W = 80, L = 30
TL128
W = 2.032, L = 0.025
W = 80, L = 1
TL129
W1 = 13.970, W2 = 13.970, W3 = 2.032
W = 13.970, L = 0.025
W1 = 13.970, W2 = 1.651, L = 2.515
W = 13.970, L = 4.470
W = 1.016, L = 1.514
W1 = 550, W2 = 550, W3 = 80
W = 550, L = 1
TL130
TL131 (taper)
TL133
W1 = 550, W2 = 65, L = 99
W = 550, L = 176
W = 40, L = 60
TL135
TL138
W = 0.762, L = 0.991
W = 30, L = 39
table continued on page 7
Data Sheet
6 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Reference Circuit (cont.)
Electrical Characteristics at 1880 MHz
Transmission
Electrical
Dimensions: mm
Dimensions: mils
Line
Characteristics
Output
TL201, TL219, TL220,
TL222
W = 0.002, ANG = 90.000, R = 0.002
W = 2, ANG = 3543307, R = 70
TL202
W1 = 1.651, W2 = 2.032
W = 1.651, L = 1.118
W1 = 65, W2 = 80
W = 65, L = 44
TL203
0.012 λ, 51.58 W
0.084 λ, 6.86 W
TL204
W = 20.320, L = 7.366
W = 800, L = 290
TL205
0.011 λ, 45.17 W
0.028 λ, 23.60 W
0.028 λ, 23.79 W
0.018 λ, 6.86 W / 8.31 W
0.076 λ, 34.08 W
W = 2.032, L = 1.016
W = 80, L = 40
TL206
W = 4.928, L = 2.540
W = 194, L = 100
TL207
W = 4.877, L = 2.540
W = 192, L = 100
TL208 (taper)
TL209, TL210
W1 = 20.320, W2 = 16.510, L = 1.575
W = 3.048, L = 7.112
W1 = 800, W2 = 650, L = 62
W = 120, L = 280
TL211, TL216, TL224, 0.032 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
TL225
TL212, TL228, TL217, 0.024 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 = 90
TL218, TL227
TL213
0.008 λ, 34.08 W
W1 = 3.048, W2 = 3.048, W3 = 0.762
W = 3.048, L = 4.826
W1 = 120, W2 = 120, W3 = 30
W = 120, L = 190
TL214, TL215
TL221, TL242
TL223 (taper)
TL226
0.051 λ, 34.08 W
0.013 λ, 51.58 W
W = 1.651, L = 1.270
W = 65, L = 50
0.018 λ, 19.45 W / 51.58 W
W1 = 6.248, W2 = 1.651, L = 1.651
W1 = 12.700, W2 = 17.780
W = 6.248, L = 0.025
W1 = 246, W2 = 65, L = 65
W1 = 500, W2 = 700
W = 246, L = 1
TL229, TL230
TL231 (taper)
TL232
0.000 λ, 19.45 W
0.038 λ, 8.31 W / 19.45 W
W1 = 16.510, W2 = 6.248, L = 3.378
W1 = 650, W2 = 246, L = 133
W1 = 6.248, W2 = 0.025 , W3 = 6.248,
W4 = 0.025
W1 = 246, W2 = 1, W3 = 246,
W4 = 1
TL233, TL234, TL237, 0.000 λ, 146.88 W
W = 0.025, L = 0.025
W = 1, L = 1
TL238
TL235
0.005 λ, 51.58 W
0.000 λ, 8.31 W
W = 1.651, L = 0.508
W = 65, L = 20
TL236
TL239
W = 16.510, L = 0.025
W1 = 20.320, W2 = 0.025, W3 = 20.320
W4 = 0.025
W = 650, L = 1
W1 = 800, W2 = 1, W3 = 800,
W4 = 1
TL240, TL241
0.000 λ, 6.86 W
W = 20.320, L = 0.025
W = 800, L = 1
Data Sheet
7 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No.
LTN/PTFB182503EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .030
(60)
RO4350, .030
(60)
VDD
C803 C802
R803
R801
R802
S1
C210
C215 C203
R805
R804
S2
C207
VDD
S3
C801
10 µF
C202
R101
C102
C206
C105
C211
C212
RF_OUT
C101
C103
RF_IN
C214
C104
C205
C106
F µ 0 1 C204
R102
VDD
C208
C213 C201
C209
PTFB182503_IN_02
PTFB182503_OUT_02
b
1 8 2 5 0 3 e f l _ C D _ 0 8 - 1 7 - 2 0 1 0
Reference circuit assembly diagram (not to scale)
Data Sheet
8 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Reference Circuit (cont.)
Component
Description
Suggested Manufacturer
P/N
Input
C101
Chip capacitor, 7.5 pF
Chip capacitor, 4.71 µF
Chip capacitor, 0.3 pF
Chip capacitor, 10 pF
Capacitor, 1000 pF
Resistor, 10 W
ATC
ATC100B7R5BW500XB
493-2372-2-ND
C102, C103
ATC
C104
ATC
ATC100A0R3BW150XB
ATC100A100FW150XB
PCC1772CT-ND
P10ECT-ND
C105, C106
ATC
C801, C802, C803
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
R101, R102, R804, R805
R801
R802
R803
S1
Resistor, 1300 W
Resistor, 1200 W
Resistor, 100 W
P1.3KGCT-ND
P1.2KGCT-ND
P100ECT-ND
Potentiometer, 2k W
Transistor
3224W-202ECT-ND
BCP5616TA-ND
LM78L05ACM-ND
S2
S3
Voltage Regulator
Output
C201, C203
C202, C204
C205, C206
C207, C208
C209, C210
C211, C212
C213, C215
C214
Chip capacitor, 0.1 µF
Capacitor, 10 µF
Digi-Key
Garrett Electronics
ATC
445-1411-2-ND
281M5002106K
Chip capacitor, 0.6 pF
Chip capacitor, 10 µF
Chip capacitor, 0.1 µF
Chip capacitor, 0.9 pF
Chip capacitor, 2.2 µF
Chip capacitor, 10 pF
ATC100B0R6BW500XB
587-1818-2-ND
Digi-Key
Digi-Key
ATC
399-1267-2-ND
ATC100B0R9BW500XB
445-1447-2-ND
Digi-Key
ATC
ATC100B100FW500XB
Data Sheet
9 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Package Outline Specifications
Package H-33288-6
2X 5.080
[.200] (2 PLS)
45° X 2.032
[45° X .080]
4X 1.143
[.045] (4 PLS)
4X 30°
4.889±.510
[.192±.020]
4X R1.524
[R.060]
V
V
D
S
9.779
[.385]
9.398
[.370]
C
L
19.558±.510
[.770±.020]
E
F
2X R1.626
[R.064]
G
C
L
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
+.254
4.039
22.352±.200
[.880±.008]
-.127
+.010
-.005
.159
[
]
H-33288-6_po_01_10-03-2012
1.575
[.062] (SPH)
C
L
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±±.12ꢀ ꢁ±.±±5ꢂ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD; E, F – N.C.
5. Lead thickness: ±.1± + ±.±51/–±.±25 mm ꢁ±.±±4 + ±.±±2/–±.±±1 inchꢂ.
6. Gold plating thickness: ±.25 micron ꢁ1± microinchꢂ max.
Data Sheet
10 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
V
4.889±.510
[.192±.020]
D
9.779
[.385]
9.398
[.370]
C
L
19.558±.510
[.770±.020]
+.381
-.127
4X R0.508
G
+.015
R.020
[
]
-.005
2X 12.700
[.500]
+.254
4.039
-.127
+.010
-.005
22.352±.200
[.880±.008]
.159
[
]
H-34288-4/2_po_03_08-13-2012
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±±.12ꢀ [±.±±5] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD
5. Lead thickness: ±.1± + ±.±51/–±.±25 mm [±.±±4 + ±.±±2/–±.±±1 inch].
6. Gold plating thickness: ±.25 micron [1± microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
11 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL V1 / PTFB182503FL V2
Revision History:
2016-06-10
Data Sheet
PreviousꢀVersion:ꢀꢀ
2013-08-06,ꢀDataꢀSheet
Page
2
Subjects (major changes since last revision)
Updated ordering code to R0
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Pleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
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Edition 2016-06-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
12 of 12
Rev. 07.2, 2016-06-10
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